• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1531-1533
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• 1997

We prepared polyimide film by electrophoretic deposition onto glass film as a sensing materials of humidity, and treated with plasma discharging as a function of discharging power to improve performance of the sensor. Then evaluated the characteristics of polyimide on humidity.

• Advances in nano research
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• v.5 no.3
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• pp.193-201
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• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

• Journal of the Optical Society of Korea
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• v.19 no.6
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• pp.687-694
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• 2015

A photoluminescence (PL) imaging method using a vision camera was employed to inspect InGaN/GaN quantum-well light-emitting diode (LED) epi-wafers. The PL image revealed dark spot defective regions (DSDRs) as well as a spatial map of integrated PL intensity of the epi-wafer. The Shockley-Read-Hall (SRH) nonradiative recombination coefficient increased with the size of the DSDRs. The high nonradiative recombination rates of the DSDRs resulted in degradation of the optical properties of the LED chips fabricated at the defective regions. Abnormal current-voltage characteristics with large forward leakages were also observed for LED chips with DSDRs, which could be due to parallel resistances bypassing the junction and/or tunneling through defects in the active region. It was found that the SRH nonradiative recombination process was dominant in the voltage range where the forward leakage by tunneling was observed. The results indicated that the DSDRs observed by PL imaging of LED epi-wafers were high density SRH nonradiative recombination centers which could affect the optical and electrical properties of the LED chips, and PL imaging can be an inspection method for evaluation of the epi-wafers and estimation of properties of the LED chips before fabrication.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.526-531
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• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• Journal of the Korean Ceramic Society
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• v.55 no.1
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• pp.55-60
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• 2018

In this study, quantum dots composed of $Mn^{2+}$ doped ZnS core and ZnS shell were synthesized using MPA precursor at room temperature. The ZnS: Mn/ZnS quantum dots were prepared by varying the content of MPA in the synthesis of ZnS shells. XRD, Photo-Luminescence (PL), XPS and TEM were used to characterize the properties of the ZnS: Mn/ZnS quantum dots. As a result of PL measurement using UV excitation light at 365 nm, the PL intensity was found to greatly increase when MPA was added at 15 ml, compared to the case with no MPA; the PL peaks shifted from 603 nm to 598 nm. A UV sensor was fabricated by using a sputtering process to form a Pt pattern and placing a QD on the Pt pattern. To verify the characteristics of the sensor, we measured the electrical properties via irradiation with UV, Red, Green, and Blue light. As a result, there were no reactions for the R, G, and B light, but an energy of 3.39 eV was produced with UV light irradiation. For the sensor using ZnS: Mn/ZnS quantum dots, the maximum current (A) value decreased from $4.00{\times}10^{-11}$ A to $2.62{\times}10^{-12}$ A with increasing of the MPA content. As the MPA content increases, the PL intensity improves but the electrical current value dropped because of the electron confinement effect of the core-shell.

• Current Applied Physics
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• v.18 no.11
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• pp.1458-1464
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• 2018

An improved method for the preparation of g-$C_3N_4$ is described. Currently, heating (> $400^{\circ}C$) of urea is the common method used for preparing the g-$C_3N_4$. We have found that sonication of melamine in $HNO_3$ solution, followed by washing with anhydrous ethanol, not only reduce the crystallite size of g-$C_3N_4$ but also facilitate intriguing electronic structure and photoluminescence (PL) properties. Moreover, loading of metal (Pt and Ag) nanoparticles, by applying the borohydride reduction method, has resulted in multicolor-emission from g-$C_3N_4$. With the help of PL spectra and local electronic structure study, at C K-edge, N K-edge, Pt L-edge and Ag K-edge by X-ray absorption spectroscopy (XAS), a precise mechanism of tunable luminescence is established. The PL mechanism ascribes the amendments in the transitions, via defect and/or metal states assimilation, between the ${\pi}^*$ states of tris-triazine ring of g-$C_3N_4$ and lone pair states of nitride. It is evidenced that interaction between the C/N 2p and metal 4d/5d orbitals of Ag/Pt has manifested a net detraction in the ${\delta}^*{\rightarrow}LP$ transitions and enhancement in the ${\pi}^*{\rightarrow}LP$ and ${\pi}^*{\rightarrow}{\pi}$ transitions, leading to broad PL spectra from g-$C_3N_4$ organic semiconductor compound.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.68-73
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• 2024

In this study, the praseodymium-doped yttrium phosphate (YPO₄:Pr³⁺) powder, which is well known for its high luminescent efficiency, and long life in the UV range, was synthesized with various content ratios of Pr₆O₁₁ and calcination temperature. Crystal structure and luminescent properties of various phosphor powders based on different concentrations and calcination conditions were characterized by XRD (X-Ray Diffraction) and PL (photoluminescence) spectrometers. From the XRD analysis, the structure of YPO₄:Pr³⁺ which is calcinated at 1,200℃ was stable tetragonal phase and crystal size was calculated about 25 nm by Scherrer equation. PL emission of YPO₄:Pr³⁺ with a different content ratio of Pr₆O₁₁ by excitation λ_exc=250 nm shows that 0.75 mol% phosphor powder has maximum PL intensity and PL decreases with the increase of the ratio of Pr₆O₁₁ up to 1.25 mol% which is caused by changes of crystallinity of phosphor powders. With increasing dopant ratio, photo-luminescence Emission decreases due to Concentration quenching, which is commonly observed in phosphors. Currently, 0.75 mol% is considered the optimal doping concentration. A hybrid ultraviolet-emitting device incorporating YPO₄:Pr³⁺ fluorescent material with plasma discharge was fabricated to enhance UV germicidal effects while minimizing ozone generation. UV emission from the plasma discharge device was shown at about 200 nm and 350 nm which caused additional emission of the regions of 250 nm, 315 nm, and 370 nm from the YPO₄:Pr³⁺ phosphor.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.201-208
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• 2006

Optical characteristics of InGaAs quantum dot (QD) laser structures with an Al native oxide (AlOx) layer as a current-blocking layer were studied by means of photoluminescence (PL), PL excitation, and spatially-resolved micro-PL techniques. The InGaAs QD samples were first grown by molecular-beam epitaxy (MBE), and then prepared by wet oxidation and thermal annealing techniques. For the InGaAs QD structures treated by the wet oxidation and thermal annealing processes, a broad PL emission due to the intermixing effect of the AlOx layer was observed at PL emission energy higher than that of the non-intermixed region. We observed a dominant InGaAs QD emission at about 1.1 eV in the non-oxide AlAs region, while InGaAs QD-related emissions at about 1.16 eV and $1.18{\sim}1.20eV$ were observed for the AlOx and the SiNx regions, respectively. We conclude that the intermixing effect of the InGaAs QD region under an AlOx layer is stronger than that of the InGaAs QD region under a non-oxided AlAs layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.315-318
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• 1998

Organic light-emitting diodes(OLEDs) or electroluminescent devices have attracted much attention because of their possible application as large-area light-emitting displays. Their structure was based on employing a multilayer device structure containing an emitting layer and a carrier transporting layer of suitable organic materials. In this study, several Tb complexes such as Tb(ACAC)$_3$(Phen), Tb(ACAC)$_3$(Phen-Cl) and Tb(TPB)$_3$(Phen) were synthesized and the photoluminescence(PL) and electroluminescence (EL) characteristics of their thin films were investigated by fabricating the devices having a structure of anode/HTL/terbium-oomplex/ETL/cathode, where TPD was used as an hole transporting and Alq$_3$ and TAZ-Si were used as an electron transporting materials. It was found that the photoluminescence(PL) and electroluminescence(EL) characteristics of these terbium complexes were dependent upon the ligands coordinated to terbium metal. Details on the explanation of electrical transport phenomena of the structure with I-V characteristics of the OLEDs using the trapped-charge-limited current(TCLC) model will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.816-825
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• 2003

Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K～300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq$_3$) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene);poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From tile analysis of electroluminescence (EL) and photoluminesccnce (PL) spectra of the Alq$_3$, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDS. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDS.