• Journal of IKEEE
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• v.13 no.1
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• pp.57-64
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• 2009

The optoelectrical characteristics of the ZnO nanoparticles (NPs) annealed in vacuum or oxygen condition from $200^{\circ}C$ to $600^{\circ}C$ were examined. Increased on-off ratio (or, the ratio of photocurrent to dark current) was observed when they were annealed at $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$ with the values enhanced about 4 orders compared to the as-prepared ZnO NPs in both annealing conditions, while the maximum efficiency was shown at the annealing temperature of $600^{\circ}C$ for the ZnO NPs annealed in vacuum with the value of 29.8 mA/W and at the temperature of $500^{\circ}C$ for those annealed in oxygen condition with the value of 40.3 mA/W. Photoresponse behavior of the ZnO NPs annealed in oxygen showed the sharp increase right after the ir exposure to the light followed by the slow decay and saturation during steady illumination, differing from the ZnO NPs annealed in vacuum which only exhibited the gradual increase. This difference occurred due to the curing effect of the oxygen vacancies. SEM images indicated no change in their morphologies with annealing, indicating the change in their internal structures by annealing, and most remarkably at $600^{\circ}C$. As for their photoluminescence(PL) spectra, the decrease of the deep-level(DL) emission was observed when they were annealed in oxygen at $400^{\circ}C$, and not at $200^{\circ}C$ and $600^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.26 no.5
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• pp.795-801
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• 2005

New PPV derivatives which contain electron-withdrawing trifluoromethyl ($CF_3$) group, poly[2-(2-ethylhexyloxy)-5-(4-trifluoro methylphenyl)-1,4-phenylenevinylene] (EH$CF_3$P-PPV), and poly[2-(2-ethylhexyloxy)-5-(3,5-bis(trifluoromethyl)-phenyl)-1,4-phenylenevinylene] (EHB$CF_3$P-PPV), have been synthesized by GILCH polymerization. As the result of the introduction of the electron-withdrawing $CF_3$ group to the phenyl substituent, the LUMO and HOMO energy levels of EH$CF_3$P-PPV (2.8, 5.1 eV) and EHB$CF_3$P-PPV (3.0, 5.3 eV) were lower than those of known poly[2-(2-ethylhexyloxy)-5-phenyl-1,4-phenylenevinylene] (EHP-PPV) (2.6, 4.9 eV). These polymers have been used as the electroluminescent (EL) layers in double layer lightemitting diodes (LEDs) (ITO/PEDOT/polymer/Al). EH$CF_3$P-PPV, and EHB$CF_3$P-PPV show maximum photoluminescence (PL) peaks at ${\lambda}_{max}$ = 550, 539 nm, and maximum EL peak at ${\lambda}_{max}$ = 545, 540 nm, respectively. The current-voltage-luminance (I-V-L) characteristics of the polymers show that turn-on voltages of EH$CF_3$P-PPV and EHB$CF_3$P-PPV are around 4.0 and 3.5 V, respectively.

• Journal of Microbiology and Biotechnology
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• v.4 no.2
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• pp.113-118
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• 1994

A bacterial strain NS-83 isolated from soil was able to produce an extracellular thermostable protease. The strain was identified as Pseudomonas aeruginosa based on its morphological and physiological characteristics. A thermostable protease from this strain has been purified to homogeneity as judged by SDS-PAGE and isoelectric focusing. The purification procedures included hydrophobic interaction, ion exchange, and gel filtration chromatography. The $M_r$ and the pl of the enzyme were 32,000 and 5.9, respectively. The optimal pH at 55$^{\circ}C$ and the optimal temperature at pH 7.0 were 8.0 and 60$^{\circ}C$, respectively. The D-values of the enzyme at 60, 65, and 70$^{\circ}C$ were 22, 2.1, and 0.75 hrs, respectively. The enzyme activity was significantly inhibited in the presence of 1 mM o-phenanthroline or EDTA, suggesting that the enzyme is metalloprotease. The $K_m$, and $V_{max}$ for Hammarsten casein were found to be 3.2 mg/ml and 0.918 unit/ml, respectively. These enzymatic properties were similar to those of elastase produced from P. aeruginosa IFO 3455, but the enzyme was clearly different from the reported elastase, in respect to $Ca^{++}$ effects on enzyme-thermostability. This property, together with amino acid composition analysis, confirmed that the enzyme differs from the known P. aeruginosa elastase.

• The korean journal of orthodontics
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• v.10 no.1
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• pp.15-27
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• 1980

This study was undertaken to compare the craniofacial morphology of Class II, Division 1 malocclusion with that of normal occlusion in children, and to investigate the incidence of various Class II, Division 1 craniofacial skeletal patterns. The subjects consist of thirty seven boys and fifty three girls with Class II, Division 1 malocclusion, and forty six boys and eighty one girls 10-15 years with normal occlusion. Measurements were recorded, tabulated and analyzed on the lateral cephalograms by the degree of SNA, SNB and ANB. The following characteristics of the Class II, Division 1 skeletal pattern were observed. 1. The anteroposterior relationship of the maxilla to the cranium in the Class II, Division 1 was very similar to that of normal occlusion. 2, Mandible of the Class II, Division 1 malocclusion was in the posterior position in relation to the cranial anatomy when compared to normal. 3. The chin point as measured by SN Pog and NS Gn showed distal positioning in relation to normal occlusion. 4. SN to mandibular plane angle was large in Class II, Division 1 malocclusion. 5. Mandibular incisor inclination was not significantly different between Class II, Division 1 malocclusion and normal occlusion, but maxillary incisors inclined and positioned labially and consequently overjet was large in Class II, Division 1 malocclusion. 6. Class II, Division 1 malocclusion was divided into four types of craniofacial skeletal pattern. The most common Class II, Division 1 pattern was found to be type C in which SN-Mand. Pl. was above mean range of normal occlusion. The next frequent pattern was found to be type A in which maxilla and mandible were within normal range of protrusion while upper incisors were severly labially inclined.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.710-714
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• 2014

The effect of titanium dioxide ($TiO_2$) on the properties of color conversion glasses was examined for glasses based on $BaO-ZnO-B_2O_3-SiO_2$. One glass sample, containing 25 mol% of each component, was used as a reference; the other three glass samples contained 1, 3, and 5 mol% $TiO_2$, respectively. The four color conversion glass samples were prepared by sintering a mixture of glass frits and a $YAG:Ce^+$ phosphor. The characteristics of the color conversion glass samples, such as luminous efficacy, luminance, CIE (Commission International de I'Eclairage) chromaticity, CCT (Correlated Color Temperature), and CRI (Color Rendering Index) were analyzed according to the PL spectrum. The refractive index of the glass samples was found to increase with the titanium dioxide content. In conclusion, luminous efficacy of color conversion glasses increased as the content of $TiO_2$ was raised in the glass matrix.

• Journal of the Korean Graphic Arts Communication Society
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• v.22 no.2
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• pp.179-198
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• 2004

Organic electroluminescent devices are light-emitting diodes in which the active materials consist entirely of organic materials. Recently, many fluorescent organic materials have been reported and the study on synthesis and application of new organic light-emitting materials has been demanded. This paper reports the optical and electrical characteristics of OLEDs using novel polymers containing biphenyl structure. First, Optical properties of novel light-emitting biphenyl derivatives doped with poly(9-vinyl carbazole)(PVK) and emitted blue, bluish green color, which is attributed to the overlap area between PL spectrum of host(PVK) and absorption spectra of guests(polymer). This is correspondent with F$\"{o}$rster energy transfer process in the blends. And, OLED devices were fabricated using poly (3,4-ethylenedioxy thiophene) (PEDOT) as a hole injection material and tris-(8-hydroxyquinoline) aluminum ($Alq_3$) as an electron transporting material. EL devices fabricated as ITO/PEDOT/PVK doped with biphenyl derivatives/$Alq_3$/Li:Al and I-V-L chatacteristics and emitting efficiency of EL devices were examined. Finally, the drift mobility of PVK doped with biphenyl derivatives and $Alq_3$ were measured by TOF technique varying applied electric field. EL efficiency was increased as the ratio of hole mobility of PVK doped with biphenyl derivatives and electron mobility of $Alq_3$ was close to one.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.364-369
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• 2010

A $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor powder with stuffed tridymite structure was synthesized by glycine-nitrate combustion method. The luminescence, formation process and microstructure of the phosphor powder were investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence spectroscopy (PL). The XRD patterns show that the as-synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor was an amorphous phase. However, a crystalline $SrAl_2O_4 $ phase was formed by calcining at $1200^{\circ}C$ for 4h. From the SEM analysis, also, it was found that the as-synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor was in irregular porous particles of about 50 ${\mu}m$, while the calcined phosphor was aggregated in spherical particles with radius of about 0.5 ${\mu}m$. The emission spectrum of as-synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor did not appear, due to the amorphous phase. However, the emission spectrum of the calcined phosphor was observed at 520 nm (2.384eV); it showed green emission peaking, in the range of 450~650 nm. The excitation spectrum of the $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor exhibits a maximum peak intensity at 360 nm (3.44eV) in the range of 250~480 nm. After the removal of the pulse Xe-lamp excitation (360 nm), also, the decay time for the emission spectrum was very slow, which shows the excellent longphosphorescent property of the phosphor, although the decay time decreased exponentially.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.137-146
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• 2011

Vertically well-aligned ZnO nanowire (NW) arrays were synthesized directly on GaN/sapphire and Si substrate from Zn vapor deposition without catalysts. Experimental results showed that the number density, diameter, crystallinity and degree of the alignment of ZnO NWs depended strongly on both the substrate position and kind of the substrates used for the growth. The photoluminescence (PL) characteristics of the grown ZnO NW arrays exhibit a strong and sharp ultraviolet (UV) emission at 379 nm and a broad weak emission in the visible range, indicating that the obtained ZnO NWs have a high crystal quality with excellent optical properties. The as-grown ZnO NWs were characterized by using scanning electron microscopy (SEM), high resolution transmission electronic microscopy (HR-TEM), and X-ray diffraction (XRD).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.9
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• pp.967-973
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• 2009

In this paper, X-band satellite communication oscillator of double phase locked is implemented by constructing a couple of phased-locked loop, and then we have analyzed the phase noise of designed PLL-DRO. The designed phase-locked oscillator is consist of series feedback DRO, frequency divider, phase detector, loop filter and programmable PLL-IC. By dividing oscillation frequency of 12.6 GHz into two frequencies, it exhibits output power of 15.32 dBm at 6.3 GHz. Phase noises of implemented oscillator are -81 dBc/Hz@100Hz, -100.86 dBc/Hz@1 kHz, -111.12 dBc/Hz@10 kHz, -116 dBc/Hz@100 kHz and -140.49 dBc/Hz@1 MHz respectively. These indicate excellent stable operation of oscillator and very good phase noise characteristics.