• Journal of Korea Port Economic Association
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• v.27 no.2
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• pp.241-260
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• 2011

This paper qualitatively describes logistics behaviors of 113 companies located in Daegu-Gyeongbuk by considering various characteristics such as business location, trade volume, cargo types and the possession of company's own warehouse. A logit model is developed to investigate how predictor variables affect these companies' inclination of utilizing Third Party Logistics Provider(3PL). The estimation results of 102 effective data points show that among the four predictors the location of company's HQs (HQADD) and trade volume (TRDTEU) significantly increase company's tendency towards utilizing 3PL while the remaining two variables (BULK, WAREHS) imparting statistically insignificant influence. The results indicate that those companies located outside the region tend to implement a strategy of using more 3PL and also that the larger the trade volume of the company the more 3PL the company uses to improve the efficiency in logistics.

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.513-514
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• 2006

• Korean Journal of Materials Research
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• v.19 no.7
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• pp.356-361
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• 2009

The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.130-135
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• 2000

We have analyzed characteristics for the structure of $Al_{0.25}/Ga_{0.75}/As/In_{0.15}/Ga_{0.85}$/AS/GaAS pseudomorphic high electron mobility transistor (PHEMT) by photoluminescence (PL) and photoreflectance (PR) measurements. By the PL measurement at 10 K, we observed el-hl transition peak at 1.322 eV and e2-hl transition peak at 1.397 eV in the InGaAs quantum well. We calculated value of 23 meV, the difference between the first energy level and the second energy level of a valence band by dependence of temperatures. Also, (e2-h2) transition signal was observed at 300 K by PR measurement. From the PR measurement, we recognized that the transition was dominated the second energy level of conduction band than the first energy level of conduction band due to band filling. The other hand, PL signal of the first energy level of conduction band was dominated because of the electron screening effect.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1646-1649
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• 2007

RF plasma and aerosol nano process were developedfor a volume production of nanoscale phosphors. R, G, and B PDP phosphors were synthesized and the characteristics were optimized through the proprietary power treatments. PL intensities were confirmed to be enhanced up to 70% of that of present commercial phosphors.

• Korean Journal of Materials Research
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• v.25 no.7
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• pp.352-357
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• 2015

To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.525-528
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• 1997

In this study, Eu(TTA)$_3$(phen) was synthesized and its films were prepared by vapor deposition method. Its films were characterized by UV-Vis absorption spectroscopy, Atomic Force Microscopy(AFM) and Photoluminescence(PL) measurements. Their electroluminescent(EL) characteristics were investigated by PL measurements, where a cell structure of glass substrate/ITO/Eu(TTA)$_3$(phen)/Al was employed. It was found that its films were well prepared without any decomposition and the film thickness could be controlled by adjusting the amount of Eu(TTA)$_3$(phen) in a boat. The EL spectrum of these films was almost the same as that of PL spectrum of these films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.279-283
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• 2003

In this study, ZnTe : S single crystal thin films substituted by sulfur were grown on GaAs (100) substrates by hot-wall epitaxy. The photoluminescence (PL) characteristics of ZnTe : S single crystal thin films was measured to investigate the effects due to sulfur atoms in the ZnTe layer. The Peak of 2.339 eV identified as the isoelectronic center was observed in low temperature PL spectrum, but PL spectra which the origin had not been well-explained were not observed. Temperature dependence of PL intensities of the light hole free exciton was explained by extrinsic self-trapping. Besides it is reported that the emission lines near absorption edge at room temperature were observed.

• Journal of Information Technology Applications and Management
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• v.12 no.4
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• pp.59-70
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• 2005

Flash memories are one of best media to support portable computer's storages in mobile computing environment. The features of non-volatility, low power consumption, and fast access time for read operations are sufficient grounds to support flash memory as major database storage components of portable computers. However, we need to improve traditional transaction management scheme due to the relatively slow characteristics of flash operation as compared to RAM memory. in order to achieve this goal, we devise a new scheme called Flash Two Phase Locking (F2PL) scheme for efficient transaction processing. F2Pl improves transaction performance by allowing multi version reads and efficiently handling slow flash write/erase operation in lock management process. We also propose a simulation model to show the performance of F2PL. Based on the results of the performance evaluation, we conclude that F2PL scheme outperforms the traditional scheme.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.328-329
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• 2009

This paper presents the effect of organic Ag complex sintering temperature on the MEH-PPV photoluminescence (PL) properties. MEH-PPV and organic Ag complex was coated on the glass substrate by spin coating method. The coated Ag complex was sintered in an air atmosphere. The sintering temperature was varied from 100 to $200^{\circ}C$ and sintering time was 5 min. The Ag film sintered at temperature higher than $120^{\circ}C$ shows very low sheet resistance less than $0.5\;{\Omega}{/\square}$. The coated MEH-PPV measure photoluminescence (PL) intensity at 580 nm. The PL peak was shifted to the higher wavelength with increasing the sintering temperature.