• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.493-497
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• 1998

The synthesis of $Sr_{1-x}Eu_xAl_2O_4$ (x=0.005~0.2;mol%) phosphors and its properties of both photoluminescence and long-phosphorescent were investigated as a function of $Eu_2O_3$ composition. The peak wavelengths (520 nm) of phosphorescence spectra were found not to vary with the $Eu_2O_3$ composition (x) of $Sr_{1-x}Eu_xAl_2O_4$ crystals. Single phase of $SrAl_2O_4$ which determined by XRD and PL was obtained with the compositions of x<0.05 mol%. After the removal of light excitation (360 nm), the excellent after-glow characteristics of the phosphorescence were obtained with the $Eu_2O_3$ compositions of x<0.05 mol%, although the after-glow intensities for all phosphors vary exponentially with the times.

• Applied Chemistry for Engineering
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• v.20 no.1
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• pp.40-45
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• 2009

N-Alkylcarbazole-3-vinylene-2-methyl-4-dicyanomethylene-4H-pyran derivatives were synthesized by dehydration, $S_N2$, Vilsmeier, and Knoevenagel condensation. They are red-emitting materials for organic light emitting device (OLED) composed of electron donor of N-alkylcabazole-3-vinylene groups and electron acceptor of 2-methyl-4-dicyanomethylene-4H-pyran groups by a conjugated structure. The structural properties of reaction products were analyzed FT-IR and $^1H-NMR$ spectroscopy. The thermal stabilities and reactivities were measured by melting points and yields. The UV-visibles and PL properties can be determined by exitation spectra and emission spectra, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.22-26
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• 2008

Red long persistent phosphors of $CaZrO_3$ : Pr was synthesized by a solid reaction method. $CaCO_3\;and\;ZrO_2$ were used as hosting materials and Pr was doped as luminescence center element, and $B_2O_3$ was used as flux. The XRD pattern confirmed crystalline phase of the phosphor, and photoluminescence investigation showed emission spectrum at $480{\sim}570nm\;and\;590{\sim}700nm$. Phosphor samples were synthesized with $B_2O_3$ flux concentration of 1, 5, 10%, and luminescent peak of maximum intensity at 494 nm was obtained for 1% $B_2O_3$. Luminescent peak of red color at 620 nm was of highest intensity for 10% $B_2O_3$.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.83-88
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• 2019

LiBaPO₄:Eu²⁺ phosphors with stoichiometric and nonstoichiometric compositions were prepared using a solid state reaction followed by heat treatment in reduced atmosphere, and the crystal structures and photoluminescence(PL) properties of the powders were investigated by x-ray powder diffraction and luminescence spectrometer. At 900℃, the Ba₃(PO₄)₂ phase as the intermediate phase was observed with the LiBaPO₄ phase as the main crystalline phase. Samples with a low europium concentration at 1,000℃ belonged to the trigonal structure, whereas samples with Eu²⁺ content more than 4 mol% showed monoclinic structure. In the nonstoichiometric compositions of 4 mol% Eu²⁺ and above, a single phase of Eu²⁺-doped LiBaPO₄, showing bluish green emission, was formed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.529-532
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• 1999

본 연구에서는 유기 전기 발광 소자에서 녹색 발광층으로 사용되는 terbium(Tb) complexes와 europium(Eu) complex, 정공 수송층으로 사용되는 TPD (N, N\`-diphenyl-N,\`(3-methylphenyl)-1, 1\`biphenyl-4, 4\`-diamine), 그리고 전자 수송층으로 사용되는 Alq$_{3}$ (trois(8-hydroxyquinolino)aluminum), Bebq$_2$들의 Uv/Vis. 홉광도와 PL 스펙 트럼과 같은 광학적 특성을 조사하였으며 또한 이러한 물질들을 이용하여 다양한 종류의 유기 전기 발광 소자를 제작하고 제작된 소자들의 전류밀도-전압-조도 등의 전기 . 광학적 특성을 조사하였으며, 그 결과 다 음과 같은 결곤을 얻을 수 있었다. 다양한 ligand를 갖는 Tb complex들의 경우에도 EL 스펙트럼의 파장대 (wavelength)는 546nm~548nm의 녹색 발광을 하는 것을 알 수 있었고, 제작된 소자 중에서 Tb(ACAC)$_3$(Phen) 을 발광충으로 하고, TPD, 그리고 Bebq$_2$를 각각 정공 수송층, 전자 수송 층으로 한 소자가 가장 낮은 구동 전압을 갖는다는 것을 확인하였으며 logJ-logV 특성에서도 모든 전계 구간에서 이러한 구조의 소자가 가장 높은 전류밀도를 나타냈으며 저 전계 구간에서 전류밀도 타이가 가장 컸다. 소자의 전류밀도와 휘도의 관계에 있어서는 제작된 네 종류의 소자 중 Tb(ACAC)3(Cl-Phen)를 발광층으로 하고 TPD, 그리고 Bebq2를 각각 정공 수송층, 전자 수송 층으로 한 소자가 가장 휘도가 우수한 것을 알 수 있었다. 또한 red (europium complex), green (terbium complex), 그리고 blue (TPD) 색깔을 나타내는 유기 재료를 사용하여 한 소자에서 백색 소자를 제작하여 cyclic voltametric방법을 이용하여 각 유기 물질들의 에너지 준위를 조사하여, 각각의 소자들을 에너지 밴드 다이어그램(energy band diagram)으로 자세히 설명하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.3
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• pp.109-114
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• 2008

Novel green long persistent phosphors of $CaZrO_3$ : $HO_{3+}$ have been synthesized at high temperature with weak reduction atmosphere by traditional solid state reaction method. The role of $H_3BO_3$ as flux and the suitable concentration of Ho as activator on the $CaZrO_3$ : $HO_{3+}$ long persistent phosphors has been investigated. Crystals of $HO_{3+}$ doped $CaZrO_3$ long persistent phosphores were characterized by fluorescence spectrophotometer and photoluminescence (PL). The main emission spectra of 546 nm peak was revealed through synthesizing at high temperature in $N_2$ gas atmosphere. The after glow emission spectra of $CaZrO_3$ : $HO_{3+}$ long persistent phosphores arise at 546 nm peak of narrow range. because that revealed pure green color. Green long persistent phosphors have been observed in the system for over 5 h after UV irradiation (254 nm). The main emission peak was ascribed to $HO_{3+}$ ions transition from $^5F_4$, $^5S_2{\to}^5I_3$, and the after glow may be ascribed to the trap centers in the $CaZrO_3$ host lattice.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.11-20
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• 1994

GaAs and AlGaAs epi-layers were grown on semi-insulating (100) GaAs substrate by molecular beam epitaxy (MBE) and their electrical and optical properties have been investigated by several measurements. In undoped GaAs, the p-type GaAs layers with the good surface morphology were obtained under the growth conditions of the substrate temperatures ranging from 570 to $585^{\circ}C$ and the $As_4$/Ga ratios from 17 to 22. In the samples with the growth rates of the ranges of $0.9~1.1 {\mu}m/h$, the impurity concentrations were in the ranges of $1.5{\times}10^{14}~5.6{\times}10^{14}cm^{-3}$ with the Hall mobilities of $590~410cm^2/V-s$. In the Si-doped GaAs, the n-type GaAs layers with low electro trap, only two hole deep levels were observed with uniform doping profiles (<1%). AlGaAs layers with good surface morphology and crystallinity were grown under an optimum condition of the substrate temperature, $600^{\circ}C $. 8 deep level defects were observed between 0.17~0.85eV in undoped AlGaAs layers.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.474-478
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• 2007

Nanostructures of $SiN_x$ were made by bombardment of ionized $N_2$ on Si surface and subsequent annealing. Atomic force micrograph showed the density of $SiN_x$ nanostructures was $3\times10^{10}/cm^2$. Their lateral size and height were 40$\sim$60 nm and 15 nm, respectively. The chemical state of the nanostructure was measured using X-ray photoelectron spectroscopy, which changed from $SiN_x$ to $Si_3N_4\;+\;SiN_x$ as the bombarding ionized gas current increases. Upon annealing, transmission electron micrograph showed a clear evidence for crystalline Si phase formation inside the $SiN_x$ nanostructures. Photoluminescence peak observed at around 400nm was thought to be originated from the interface states between the nanocrystalline Si and surrounding $SiN_x$ nanostructures.

• Journal of Korean Ophthalmic Optics Society
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• v.13 no.1
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• pp.71-76
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• 2008

Purpose: A simple and efficient method to prepare nanocrystalline ZnO thin film with pure strong UV emission on soda-lime-silica glass substrates by low-temperature annealing was improved. Methods: Crystal structural, surface morphological, and optical characteristics of nanocrystalline ZnO thin films deposited on soda-lime-silica glass substrates by prefiring final annealing process at 300$^{\circ}C$ were investigated by using X-ray diffraction analysis, field emission-scanning electron microscope, scanning probe microscope, ultraviolet-visible-near infrared spectrophotometer, and photoluminescence. Results: Highly c-axis-oriented ZnO films were obtained by prefiring at 300$^{\circ}C$. A high transmittance in the visible spectra range and clear absorption edge in the ultra violet range of the film was observed. The PL spectrum of ZnO thin film with a deep near band edge emission was observed while the defect-related broad green emission was nearly quenched. Conclusions: Our work will be possibly adopted to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below 300$^{\circ}C$, in the future.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.11-17
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• 2000

We investigated the growth of InGaN/GaN multiple quantum wells (MQWs) structures which emit blue light. The samples were grown in a low pressure metalorganic chemical vapor deposition system. We examined InGaN/GaN MQWs by varying growth temperatures and thicknesses of InGaN well and GaN barrier layers in MQWs. Especially, the thickness of GaN barrier in InGaN/GaN MQWs was found to severely affect the interfacial abruptness between InGaN well and GaN barrier layers. The higher order satellite peaks in the high resolution x-ray diffraction spectra and the high resolution cross sectional transmission electron microscope image of MQW structrues revealed that the interface between InGaN and GaN layers was very abrupt. Room-temperature photoluminescence spectra also showed a blue emission from InGaN/GaN MQWs at the wavelength of 463.5nm with a narrow full width at half maximum of 72.6meV.