• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.252-259
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• 2005

Single crystal $CuGaSe_2$ layers were grown on thoroughly etched semi-insulating CaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuGaSe_2$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuGaSe_2$ thin films measured with Hall effect by Van der Pauw method are $4.87{\times}10^{17}cm^{-3}$ and $129cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.7998eV-(8.7489{\times}10^{-4}eV/K)T^2/(T+335K)$. The voltage, current density of maxiumun power, fill factor, and conversion, efficiency of $n-CdS/p-CuGaSe_2$, heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.41 V, $21.8mA/cm^2$, 0.75 and 11.17%, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.4
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• pp.131-135
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• 2020

Single crystal phased CaZrO₃ : Eu³⁺ phosphor have been synthesized by skull melting method. The crystal structure, morphology and optical properties of synthesized phosphor were investigated XRD (X-ray diffraction), SEM (scanning electron microscopy), UV (ultraviolet) fluorescence reaction and PL (photo luminescence). The starting materials having chemical composition of CaO: ZrO₂ : Eu₂O₃= 0.962 : 1.013 : 0.025 mol% were charged into a cold crucible. The cold crucible was 120 mm in inner diameter and 150 mm in inner height, and 3 kg of mixed powder (CaO, ZrO₂ and Eu₂O₃) was completely melted within 1 hour at an oscillation frequency of 3.4 MHz, maintained in the molten state for 2 hours, and finally air-cooled. The XRD results show that synthesized phosphor is stabilized in orthorhombic perovskite structure without any impurity phases. The synthesized phosphor could be excited by UV light (254 or 365 nm) and the emission spectra results indicated that bright red luminescence of CaZrO₃ : Eu³⁺ due to magnetic dipole transition ⁵D₀→⁷F₂ at 615 nm was dominant.

• Journal of Sensor Science and Technology
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• v.12 no.1
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• pp.16-23
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• 2003

Thermoluminescent properties of $Li_2B_4O_7$ single crystal grown by Czochralski method have been investigated. The high quality $Li_2B_4O_7$ single crystal without core was obtained at rotation speed of 10 rpm for seed crystal and pulling speed below $0.18\;mm{\cdot}h^{-1}$. The structure of $Li_2B_4O_7$ single crystal was classified as tetragonal by XRD analysis. The TL glow curve was composed with three overlapped peaks which can be easily deconvoluted and the TL response of $Li_2B_4O_7$ single crystal TLD to X-ray radiation is linear within the range of $50\;mGy{\sim}1.5\;Gy$. Activation energies of three TL glow peaks analyzed by the various heating rates method and PL spectrum were 0.93, 1.78 and 2.25 eV, respectively.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.81-88
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• 2006

Laterally self-aligned InGaAs/GaAs quantum-dots (QDs) have been fabricated by using a multilayer stacking technique. For the growth optimization, we vary the number of stacks and the growth temperature in the ranges of 1-15 periods and $500-540^{\circ}C$. respectively, Atomic force microscope (AFM) images and photoluminescence (PL) spectra reveal that the lateral alignment of QDs is enhanced in extended length by an increased stack period, but severely degrades into film-like wires above a critical growth temperature. The morphological and the photoluminescence characteristics of laterally self-aligned InGaAs QDs have been analyzed through mutual comparisons among four samples with different parameters. An anisotropic arrangement develops with increasing number of stacks, and high-temperature capping allows isolated QDs to be spontaneously organized into a one-dimensionally aligned chain-like shape over a few ${\mu}m$, Moreover, the migration time allowed by growth interruption plays an additional important role in the chain arrangement of QDs. The QD chains capped at high temperature exhibit blue shifts in the emission energy, which may be attributed to a slight outdiffusion of In from the InGaAs QDs.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.1-5
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• 2018

In this study, the effects of indium (In) doping in InGaN/GaN multi quantum well (MQW) on photoelectrochemical (PEC) properties were investigated. Each quantum well (QW) layer with controlled In content were grown on sapphire substrate. Before growth of MQW, GaN growth consisted of various stages in the following order: buffer GaN growth, undoped GaN growth, and Si-doped n-type GaN growth. Absorbance of InGaN/GaN MQW having different In composition was higher than that of the InGaN/GaN MQW having a constant In composition. It indicates that InGaN layer having different In composition absorbs light having a broad spectrum energy. These results are in agreement with those in photoluminescence (PL). After evaluation of PEC properties, it demonstrated that InGaN/GaN MQW having different In composition was improved InGaN/GaN MQW having constant In composition in PEC water splitting ability.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.305-305
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• 2014

양자점(Quantum dots)은 3차원적 운반자 구속과 낮은 전류와 높은 온도에서 작동하는 나노 크기의 전기적, 광학적 소자로 응용이 적합하기 때문에 그 특성을 이용한 단전자 트랜지스터, 적외선 검출기, 레이저, LED, 태양전지 등 반도체 소자로의 응용연구가 활발히 진행되고 있다. 특히 양자점의 낮은 임계전류밀도와 높은 차동 이득(differential gain), 그리고 고온에서 작동이 용이하여 양자점 레이저로 활용되고 있다. 이러한 분야에 양자점을 응용하기 위해서는 양자점의 운반자 동역학을 이해하고 양자점의 모양, 크기, 크기 분포와 같은 특성 조절이 필요하다. 또한 기존의 연구들은 III-V족 화합물 반도체 양자점에 대한 연구가 대부분이며, II-VI족으로 구성된 연구가 미흡한 상황이기 때문에 II-VI족 화합물 반도체 양자점에 대한 많은 연구가 필요한 상황이다. II-VI 족 화합물 반도체 양자점은 기존의 III-V 족 양자점보다 더 큰 엑시톤 결합에너지(exciton binding energy)를 가지고 있으며, 이러한 특성을 가지는 II-VI 족 화합물 반도체 양자점 중에서도 CdTe 양자점은 높은 엑시톤 결합에너지와 녹색 스펙트럼 영역을 필요로 하는 광학적 장치들에 응용 가능성이 높기 때문에 더욱 주목받고 있다. 본 연구에서는 분자 선속 에피 성장법(Molecular Beam Epitaxy; MBE)과 원자 층 교대 성장법(Atomic Layer Epitaxy; ALE)으로 CdTe/ZnTe 나노구조에서 ZnTe 완충층의 두께에 따른 운반자 동역학 및 광학적 특성을 연구 하였다. 저온 광루미네센스 측정(Photoluminescence; PL) 을 통하여 ZnTe 완충층 두께가 증가할수록 양자점의 광루미네센스 피크가 낮은 에너지로 이동함을 알 수 있었는데, 이는 ZnTe 완충층의 두께가 증가할수록 ZnTe 완충층과 CdTe 양자점의 격자 불일치(lattice mismatch)로 인한 구조 변형력이 감소하고 이에 따라 CdTe 양자점으로 가해지는 변형(Strain)이 감소하여 CdTe 양자점의 크기가 증가했기 때문이다. 그리고 ZnTe 완충층의 두께가 증가할수록 PL 세기가 증가함을 알 수 있었는데, 이는 ZnTe 완충층의 두께가 증가할수록 양자 구속 효과로부터 electronic state와 conduction band edge 사이의 에너지 차이의 증가 때문이다. 또한 시분해 광루미네센스 측정 결과 ZnTe의 두께가 증가할수록 양자점의 소멸 시간이 더 길게 측정되었는데, 이는 더 큰 양자점 일수록 엑시톤 오실레이터 강도가 감소하기 때문에 더 긴 소멸 시간을 나타내는 것을 확인할 수 있었다. 결과적으로 본 연구는 ZnTe 두께 변화를 통해 양자점의 에너지 밴드를 제어할 수 있으며, 양자점의 효율 향상을 할 수 있는 좋은 방법임을 제시하고 있다.

• Applied Chemistry for Engineering
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• v.35 no.4
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• pp.296-302
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• 2024

An ionic conjugated polymer-iron (III) chloride composite was prepared via in-situ quaternization polymerization of 2-ethynylpyridine (2EP) using iron (III) chloride. Various instrumental methods revealed that the chemical structure of the resulting conjugated polymer (P2EP)-iron (III) chloride composite has the conjugated backbone system having the designed pyridinium ferric chloride complexes. The polymerization mechanism was assumed to be that the activated triple bond of 2-ethynylpyridinium salt, formed at the first reaction step, is easily susceptible to the step-wise polymerization, followed by the same propagation step that contains the propagating macroanion and monomeric 2-ethynylpyridinium salts. The electro-optical and electrochemical properties of the P2EP-FeCl₃ composite were studied. In the UV-visible spectra of P2EP-FeCl₃ composite, the absorption maximum values were 480 nm and 533 nm, and the PL maximum value was 598 nm. The cyclic voltammograms of the P2EP-FeCl₃ composite exhibited irreversible electrochemical behavior between the oxidation and reduction peaks. The kinetics of the redox process of composites were found to be very close to a diffusion-controlled process from the plot of the oxidation current density versus the scan rate.

• Journal of the Korean Chemical Society
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• v.45 no.6
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• pp.570-576
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• 2001

The europium doped yttrium oxybromide phosphors were synthesized by solid-state reaction method. The YOBr: $Eu^{3+}$ phosphor showed a strong and narrow red emission band at 621 nm and maximum emission intensity obtained when 0.05 mol Eu ions were doped. The red emission of $Eu^{3+}$ originated from $^5D_0$ ${\rightarrow}$ $^7F_2$electric dipole transition. In order to investigate on photoluminescence behavior, several experimental skills and numerical fittings are conducted to the YOBr: $Eu^{3+}$ phosphor. The emission spectrum was measured in the UV range and then decay curve of $^5D_0$ ${\rightarrow}$ $^7F_j$transitions was examined. The energy interaction type of YOBr: $Eu^{3+}$ phosphor was dipole-dipole interaction. In addition to the calculating by critical concentration, the critical distance ($R_0$) was calculated by decay curve fitting parameter from Inokuti-Hirayamas equation, and spectral overlap method. The critical distance was 17.03, 10.51 and 7.18$\AA$ for those methods, respectively. As considering systematic error of measurements, these values are within the same order, so that the above fitting methods are plausible and recommendable.

• Journal of Sensor Science and Technology
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• v.12 no.3
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• pp.139-148
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• 2003

$LiPO_3$ glass scintillators were fabricated, and lanthanides(except Pm) oxides or chlorides were used as an activator. For the fabrication of $LiPO_3$ glasses, optimum heating conditions were obtained, and the photoluminescence of the glasses was measured by the monochromator. For the best transparency of the glass samples, optimum heating temperature and time are $950^{\circ}C$ and 90 min, respectively. It was found that Pr, Nd, Gd, Ho, Er, Tm, Yb and Lu do not work as activator; emission spectrums of samples with them were equal to those of samples without activators. In the case of samples with Europium, the peaks of emission spectrum of $Eu^{2+}$ and $Eu^{3+}$ were 420 nm and 620 nm respectively. And samples with $Ce^{3+}$ were about 380 nm, and $Tb^{3+}$ were about 550 nm. Glass scintillators with $Be^{3+}$, $Eu^{2+}$, and $Ce^{3+}$ were found to be more applicable to neutron detection. The result of neutron detection by Ra-Be sources showed that $Ce^{3+}$ was found to be the best activator of $LiPO_3$.

• Journal of the Korean Chemical Society
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• v.44 no.5
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• pp.453-459
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• 2000

FED has deserved an intensive attentioD as a new flat panel display. The present investigationaims at undemtanding the photoluminescence and cathodoluminescent properties of hGaO$_3$: $Eu^{3+}$ phosphor bytaking into account the possibility that this phosphor could be applied for FED. In onler to investigate on.sucha detailed behavior; 8everM experimental skil18 Je conducted to the LaGaO$_3$:$Eu^{3+}$ phosphoL The excimtion srectrum artd emission spectmn were rnezsured in the UV range and then decay curve of $^5D_0$+$^7F_j$transitions\vas examined. The decay behavior of $^5D_0$ emission was anMyzed by a newly Iuoposed cross-relaxation mech-ani8In in asswiation with inteFwnter di1ffision (or migration). The cross-mlaxation from $^5D_0$ to CTB (Cha'geTransfer Band) wuld be a quite retsonable by considering the excitation spectrum. It could be also found thatthe quenching type was changed from ditfrsion controlled process to the direct quenching process -s inJeasing $Eu^{3+}$ oncntration.