• Title/Summary/Keyword: PIN receiver

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An Analysis of Receiving Sensitivity of PIN Receiver for Optical Communication System (광통신시스템의 PIN 수신기 수신감도 해석)

  • Kim, Sun-Yeob
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.5
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    • pp.2272-2278
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    • 2011
  • It is essential to various evaluate about statistic character of the signal and additional noise for optimization of the optical communication system. We expressed various error probability with the m which was bandwidth and a bit numerical function and carried out performance evaluation of a PIN receiver. This research analyzed the receiving sensitivity of the PIN receiver and verified reception sensitivity through computer simulation in the optical communication system. As a result, the receiving sensitivity for PIN receiver are $9.2{\times}10^4$ photon/bit for given error probability.

Fabrication and Characterization of PIN-Preamplifier Module for High Speed Optical Receiver (고속 광통신용 PIN-전치증폭기 수광모듈 제작 및 특성 측정)

  • 윤태열;박경현;송민규;황인덕;윤태열;유지범;정종민
    • Korean Journal of Optics and Photonics
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    • v.5 no.2
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    • pp.333-339
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    • 1994
  • We fabricated a single mode fiber pigtailed PIN-preamplifier front-end receiver module for the high speed optical receiver. Hybrid method was used to integrate GaInAs PIN photodiode and transimpedance type GaAs preamplifier. The capacitance and the diameter of light receiving area of PIN photodiode were 0.35 pF and $20{\mu}m$ respectively. The -3 dB cut-off frequency of PIN-preamplifier module was above 2 GHz, and the sensitivity of the module at 2.5 Gbps NRZ $(PRBS=2^{23}-1)$ signal was -25.2 dBm at $10^{-9}$ BER. > BER.

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10Gbps PIN PD Receiver of SFF Package (SFF의 고속 10 Gbps PIN PD 광수신기)

  • Sin, Myeong-Hun;Yun, Gyeong-Hun;Choe, Hyeong-Gyu;Jeon, Jeong-Eun;Kim, Mun-Il;Gu, Eun-Jeong;Park, Chan-Yong
    • Proceedings of the Optical Society of Korea Conference
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    • 2004.02a
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    • pp.284-285
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    • 2004
  • We have developed a 10 Gbps receiver consist of an InGaAs PIN PD and an embedded TIA(transimpedance preamplifier). The receiver is assembled in a small form factor (SFF) Package. It shows f-3dB of 10 GHz and the sensitivity more than -20 dBm at 10$^{-10}$ BER (bit-error-rate) for 10 Gbps optical input signal of 2$^{31}$-1 PRBS (pseudo-random-bit-sequence).

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Optical Receiver Design For Optical Communication Using Cascoded Amplifier with Inductor Peaking Technique (케스코드 증폭기와 인덕터 피킹기술을 이용한 광통신용 광 수신기의 설계)

  • 박정식;이강승;정윤하
    • Proceedings of the IEEK Conference
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    • 1999.06a
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    • pp.305-308
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    • 1999
  • In this paper, a transimpedance optical receiver based on PIN/P-HEMT with cascoded input stage and inductor peaking technique was designed for several giga bits optical communication. Analysis of the receiver shows that cascoded input stage with inductor peaking increase bandwidth without sacrificing low frequence gain. The receiver achieved a low noise characteristic and maximally flat frequence response. It is shown that the 3-dB bandwidth of the designed receiver is 8.3 ㎓ and input equivalent noise current is as low as 16pA/√Hz to 10㎓.

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The Coupling Characteristics of THz Electromagnetic Wave using Copper Wire Waveguide (구리선 도파로를 이용한 THz 전자기파의 결합 특성)

  • Jeon, Tae-In;Ji, Young-Bin
    • Korean Journal of Optics and Photonics
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    • v.17 no.3
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    • pp.290-295
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    • 2006
  • The coupling between copper wire and a THz electromagnetic wave is one of the important factors to build up the magnitude and spectrum of a THz wave. We measured a I THz spectrum range THz pulse into a $480{\mu}m$ diameter and 23cm long copper wire waveguide. We measured THz pulses up to $275{\mu}m$ air gap between the end of the copper wire and transmitter or receiver chips. The coupling sensitivity of the transmitter is 3 times bigger than that of the receiver. The THz pulses propagated to air by the end of the receiver-side copper wire tip acting as a transmitter antenna. We confirmed that the THz field concentrates near the copper wire surface by opening the pin hole to the copper wire waveguide.

Receive Sensitivity Improvement of Wavelength Division Multiplexing System (파장 분할 다중화 시스템의 수신감도 개선)

  • Kim, Sun-Youb;Park, Hyoung-Keun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.3
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    • pp.579-585
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    • 2006
  • In this study, we analysis an optical receivers using the optical preamplifier in a spectrum-sliced WDM systems. The average numbers of photons/bit, for an $10^{-9}$ error probability, counts using the OOK and FSK transmission. As a result, the theoretical sensitivity for PIN receiver and optical preamplifier receiver are approximately $9.2\times10^4\;and\;7.2\times10^2$ in the m=20, respectively. Also, the average numbers of photons/bit, for and given error probability, theoretical receiver sensitivity for Gaussian method and k-square method are approximately $9\times10^2\;and\;2.16\times10^2$ in the m=40, respectively. And the average numbers of photons/bit, for an given error probability, theoretical receiver sensitivity, OOK and FSK transmission are approximately $1.9\times10^2\;and\;3.1\times10^2$ in the m=20, respectively.

A Fabrication and Characteristics of GaInAs/InP PIN Phtodiode Grown by LPE (LPE에 의한 GaInAs/InP PIN Photodiode의 제작 및 특성)

  • 박찬용;남은수;박경현;김상배;박문수;이용탁;홍창희
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.5
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    • pp.737-746
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    • 1990
  • Ga0.47In0.53As PIN photodiodes(PD) having various areas have been fabricated by liquid phase epitaxial techniques. Ternary melt has been baked out at 675\ulcorner in H2 atmosphere for 20 hours before growth, which resulted in reduction of background carrier concentration of grown epi-layer. Also, lattice mismatch has been controlled within 0.01%. The room temperature performance of 10**-4cm\ulcornerarea PIN PD at a bias voltage of -5V were` quantum efficiency(with no antireflection coating)=60% for 1.3\ulcorner light source, dark current\ulcorner5nA, and capacitance\ulcornerpE. Frequency response measurement of packaged PIN PD has shown that cut-off frequency (f-3dB) was 961MHz. This PD has shown a good eye pattern when it was incorporated in a 565Mbps optical receiver.

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Pulse 2 kW RF Limiter at S-band (S-대역 펄스 2 kW RF 리미터)

  • Jeong, Myung-Deuk
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.7
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    • pp.791-796
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    • 2012
  • A RF limiter is a component to protect the receiver front end from undesired signal. A RF limiter is a key component whose output is constant level for all inputs above a critical value. A RF limiter use a diode to pass signals of low power while attenuating those above some threshold. A RF limiter for receiver protection in modern radar systems is playing a vital role in order to meet challenges of new interference threats and complicated electromagnetic environments. This paper proposed a new circuit for high power RF limiter whose structure is the combination of the PIN diode and Limit diode. PIN diode take a use of its isolation characteristics which act as a switch does. A 2 kW RF limiter with 200 us pulse width at S-band was developed. It shows good agreements between estimated value and measured results.

A Novel 3-Level Transceiver using Multi Phase Modulation for High Bandwidth

  • Jung, Dae-Hee;Park, Jung-Hwan;Kim, Chan-Kyung;Kim, Chang-Hyun;Kim, Suki
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.791-794
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    • 2003
  • The increasing computational capability of processors is driving the need for high bandwidth links to communicate and store the information that is processed. Such links are often an important part of multi processor interconnection, processor-to-memory interfaces and Serial-network interfaces. This paper describes a 0.11-${\mu}{\textrm}{m}$ CMOS 4 Gbp s/pin 3-Level transceiver using RSL/(Rambus Signaling Logic) for high bandwidth. This system which uses a high-gain windowed integrating receiver with wide common-mode range which was designed in order to improve SNR when operating with the smaller input overdrive of 3-Level. For multi-gigabit/second application, the data rate is limited by Inter-Symbol Interference (ISI) caused by low pass effects of channel, process-limited on-chip clock frequency, and serial link distance. In order to detect the transmited 4Gbps/pin with 3-Level data sucessfully ,the receiver is designed using 3-stage sense amplifier. The proposed transceiver employes multi-level signaling (3-Level Pulse Amplitude Modulation) using clock multi phase, double data rate and Prbs patten generator. The transceiver shows data rate of 3.2 ~ 4.0 Gbps/pin with a 1GHz internal clock.

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