• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.352.1-352.1
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• 2014

Indium Tin Oxide (ITO) films are the most extensively studied and commonly used as ones of TCO films. The ITO films having a high electric conductivity and high transparency are easily fabricated on glass substrate at a substrate temperature over $250^{\circ}C$. However, glass substrates are somewhat heavy and brittle, whereas plastic substrates are lightweight, unbreakable, and so on. For these reasons, it has been recently suggested to use plastic substrates for flexible display application instead of glass. Many reaearchers have tried to produce high quality thin films at rood temperatures by using several methods. Therefore, amorphous ITO films excluding thermal process exhibit a decrease in electrical conductivity and optical transparency with time and a very poor chemical stability. However the amorphous Indium Gallium Zinc Oxide (IGZO) offers several advantages. For typical instance, unlike either crystalline or amorphous ITO, same and higher than a-IGZO resistivity is found when no reactive oxygen is added to the sputter chamber, this greatly simplifies the deposition. We reported on the characteristics of a-IGZO thin films were fabricated by RF-magnetron sputtering method on the PEN substrate at room temperature using 3inch sputtering targets different rate of Zn. The homogeneous and stable targets were prepared by calcine and sintering process. Furthermore, two types of IGZO TFT design, a- IGZO source/drain material in TFT and the other a- ITO source/drain material, have been fabricated for comparison with each other. The experimental results reveal that the a- IGZO source/drain electrode in IGZO TFT is shown to be superior TFT performances, compared with a- ITO source/drain electrode in IGZO TFT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.284-284
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• 2009

We have fabricated semiconductor nanocrystals using phase separation on flexible substrates for future application in QD-LEDs. The phase separation between the CdSe semiconductor nanocrystals and TPD organic underlayer can occur during the solvent drying, and the CdSe may rise towards the surface of the coated films, which is arranged into close packed array called self-assembly process. In this work, the polyethylene naphthalate (PEN) films of $200{\mu}m$ thickness was used as a flexible substrate, which was coated with indium tin oxide(ITO) as a transparent electrode of <$15{\Omega}/cm^2$. A number of solvents such as chloroform, toluene, and hexane was used and their coating properties were investigated using the spin coating process. The dispersion of both QD and TPD was rather poor in toluene and hexane and resulted in rougher surface and some aggregates. Meanwhile, the surface roughness of templates can be a very critical issue in the fabrication of QD-LED devices. Some experiments was performed to reduce the ~4nm surface roughness of the PEN films and It can be decreased to the minimum of ~0.7nm. Also discussed are the optical properties of semiconductor nanocrystals used in this phase separation and possible large area and continuous coating process for future application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1028-1032
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• 2009

In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.283-284
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• 2008

Electrical and optical characteristics of indium tin oxide (ITO) and indium zinc oxide (IZO) films without and with $(SiO_2)_3(ZnO)_7$ at.% (SZO) film deposited on poly(ethylene naphthalate) (PEN) and poly(ethylene terephthalate (PET) substrates as a gas barrier layer for flexible display were studied. The ITO and IZO films with SZO gas barrier layer showed the improved properties which were both the high transmittance of average 80% in the visible light range and the decreased sheet resistance as compared to those of ITO and IZO films without SZO layer. Particularly, the PEN substrate with only SZO gas barrier layer had a low water vapor transmission rate (WVTR) of $\sim10^{-3}g/m^2$/day. Thus, we suggest that the SZO film with protection ability against the water vapor permeation can be applied to gas barrier layer for flexible display.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.9-14
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• 2007

In this article, the organic integrated circuits such as inverter, ring oscillator, NAND and NOR gates, and rectifier have been fabricated on PEN substrate by using pentacene TFTs, The OTFTs used bottom contact structure and produced the average mobility of 0.26 $cm^2/V.sec$ and on/off current ratio of $10^5$. All circuits successfully worked as the simulation results. Especially, the rectifier was able to operate up to 1 MHz input AC signals, and ring oscillator exhibited oscillation frequency of 1MHz at 40 V. Based on the results of organic integrated circuits we could confirm the possibility of the low cost RFID tags and flexible display with OTFTs.

• Microbiology and Biotechnology Letters
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• v.10 no.4
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• pp.245-252
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• 1982

The enzymes lytic to red yeast cell wall, which were produced by Penicillium lilacinum ATCC 36010 and Bacillus pumilus No 41, hydrolyzed an extracellular mannan from Rhodotonla glutinis IFO 0695. mannan was arranged with $\beta$-1,3 and $\beta$-1,4 linkages alternatively. Using this mannan, substrate specificities of these enzymes were investigated. The one from Penicillium lilacinum was an unique mannanase which hydrolyzed $\beta$-1,3 mannoside bond and the other from B. pumilus was a new type of mannanase which cleaved $\beta$-1,4 mannoside bond with requirement of the existence of $\beta$-1,3 linkage on the reducing side. Both enzymes released two kinds of oligosaccharide from mannan, respectively. However, the enzyme from Pen lilacinum produced tetrasaccharide and disaccharide and one of them, tetrasaccharide, was hydrolyzed to disaccharide further. The one from B. pumilus released tetrasaccharide and hexasaccharide from mannan finally.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.15-19
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• 2009

A high efficient organic red light emitting device with structure of DNTPD/TAPC/$Bebq_2$ :[$(pq)_2Ir(acac)$, SFC-411]/SFC-137 was fabricated on the plastic substrate, which can be applied in the fields of flexible display and illumination. In the device structure, N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD] as a hole injection layer and 1,1-bis-(di-4-tolylaminophenyl) cyclohexane [TAPC] as a hole transport were used. Bis(10-hydroxybenzo[h]quinolinato) beryllium complex [$Bebq_2$] was used as a light emitting host material. The host material, $Bebq_2$ was doubly doped with volume ratio of 7% iridium(III)bis-(2-phenylquinoline)acetylacetonate[$(pq)_2$Ir(acac)] and 3% SFC-411[red phosphor dye coded by the proprietary company]. And then, SFC-137 was used as an electron transport layer. The luminous intensity and current efficiency of the fabricated device were $22,780\;cd/m^2$ at 9V and 17.3 cd/A under $10,000\;cd/m^2$, respectively. The maximum current efficiency of the device was 22.4cd/A under $580\;cd/m^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.431-433
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• 2009

We developed 4.8 inch WQVGA e-paper on plastic substrate using organic field effect transistors (OFETs). Polyethylene naphthalate (PEN) film was used as a flexible substrate and arrays of OFETs with bottom-gate, bottom-contact structure were fabricated on it. Lowtemperature curable organic gate insulating materials were employed and polymer semiconductor solutions were ink-jetted on arrays with high-resolution. At all steps, process temperature was limited below $130^{\circ}C$. Finally, we could drive flexible e-paper displays based on OFET arrays with the resolution of 100 dpi.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.76-77
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• 2009

CdS 박막은 에너지 밴드갭이 상온에서 2.42 eV인 직접 천이헝 반도체로써 태양전지 및 광전도 셀과 광센서 등에 널리 사용되고 있다. 본 논문에서는 유연성을 가지고 있는 PC, PET, PEN등 폴리머 기판을 $O_2$ 플라즈마를 사용하고 RF Power 100W, 공정시간 60~1200s의 조건에서 전처리하고, 이 기판을 CBD법을 이용하여 CdS 박막을 증착시켰다. 폴리머 기판의 결정립크기는 180s의 처리시간 부터 증가를 보였으며, 전기적 특성은 60s 와 180s에서 이동도와 비저항이 반비례하는 경향성을 나타내었고 광투과율은 처리시간에 따른 뚜렷한 변화를 보이지 않았다.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1485-1486
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• 2011

A layer of $TiO_2$ thin film less than ~500nm in thickness, as a blocking layer, was coated by sol-gel method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells (DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte (I-/I3-). The effects of heat treatment conditions of the gel and as-coated film on the thickness and consolidation to substrate were studied. The flexible DSCs were fabricated with working electrode of Ti thin foil coated with blocking $TiO_2$ layer, dye-attached mesoporous $TiO_2$ film, gel electrolyte and counter electrode of Pt-deposited indium doped tin oxide/polyethylene naphthalate (ITO/PEN). The photo-current conversion efficiency of the cell was 5.3% ($V_{oc}=0.678V$, $J_{sc}=12.181mA/cm^2$, ff=0.634) under AM1.5, 100 mW/$cm^2$ illumination.