• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.431-431
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• 2007

In this paper, the LC alignment characteristics of the NDLC thin film deposited by PECVD and sputtering were reported respectively. The NDLC thin film deposited using sputter showed uniform LC alignment at the 1200 eV of the ion beam intensity and pretilt angle was about $2^{\circ}$ while the NDLC thin film deposited using the PECVD showed uniform LC alignment and high pretilt angle at the 1800 eV of the ion beam intensity. Concerning the ion beam intensity, uniform LC alignment of the NDLC thin film deposited by the sputtering was achieved at the lower intensity. And the pretilt angle of the NDLC thin film deposited by sputter was higher than those of NDLC thin film that was deposited using the PECVD. The uppermost of the thermal stability of NDLC thin film was $200^{\circ}C$, respectively. However, NDLC thin film deposited by the PECVD showed stability at high temperature without defects, compared to NDLC thin film deposited by the sputter.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.7-15
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• 2000

An ECR-PECVD system with the characteristics of high ionization rat다 ability of plasma processing in a wide pressure range and deposition at low temperature was manufactured and characterized for the deposition of thin films. The system consists of a vacuum chamber, sample stage, vacuum gauge, vacuum pump, gas injection part, vacuum sealing valve, ECR source and a control part. The control of system is carried out by the microprocessor and the ROM program. We have investigated the vacuum characteristics of ECR-PECVD system, and also have diagnosed the characteristics of ECR microwave plasma by using the Langmuir probe. From the data of system and plasma characterization, we could confirmed the stability of pressure in the vacuum chamber according to the variation of gas flow rate and the effect of ion bombardment by the negative DC self bias voltage. The plasma density was increased with the increase of gas flow rate and ECR power. On the other hand, it was decreased with the increase of horizontal radius and distance between ECR source and probe. The calculated plasma densities were in the range of 49.7\times10^{11}\sim3.7\times10^{12}\textrm{cm}^{-3}$. It is also expected that we can estimate the thickness uniformity of film fabricated by the ECR-PECVD system from the distribution of the plasma density.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.693-696
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• 2004

For InGaP/GaAs HBT applications, we have developed characterized MIM capacitors with thin $1000{\AA}$ PECVD silicon nitride which were deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $300^{\circ}C$ and had the capacitance density of 600 pF/$mm^2$ with the breakdown electric fields of 3073 MV/cm. Three PECVD process parameters were designed to lower the refractive index and then lower the deposition rate of silicon nitride films for the high breakdown electric field. At the PECVD process condition of gas mixing rate (0.92), working pressure (1.3 Torr), RF power (53 W), the AFM Rms value of about $1000{\AA}$ silicon nitride on the bottom metal was the lowest of 0.662 nmand breakdown electric fields were the highest of about 73 MV/cm.

• Journal of Advanced Marine Engineering and Technology
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• v.35 no.3
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• pp.323-328
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• 2011

In this paper, the UWR thin films were prepared by RF PECVD. The relationships between the deposition conditions and the film properties such as morphological and chemical properties of the films were discussed. Moreover, from the analysis of plasma diagnostics using OES, formation mechanism of UWR thin films was discussed.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.462-467
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• 1993

ECR PECVD(Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition )장치를 이용하여 (100) 실리콘 기판 위에 실리콘 산화막을 상온에서 증착하였다. 기체 유량비(SiH4/O2)가 막의 성질에 미치는 영향을 고찰하여 최적의 증착 조건을 도출하였다. 기체 유량비가 0.071일 때 비가역 파괴 전장은 9~10MV/cm 이었고, 4~5MV/cmm의 전장하에서 누설 전류는 ~10-11 A/$ extrm{cm}^2$이었다. 이러한 수치들은 액정 표시 소자용 박막 트랜지스터와 같이 저온의 제조공정이 요구되는 소자를 만들기에 충분하다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.14-15
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• 2007

MAHA PECVD(Plasma Enhanced Chemical Vapor Deposition) 설비는 반도체 소자업체의 200mm와 300mm 생산 라인에서 실리콘 산화막 및 실리콘 질화막을 증착하고 있는 (주)아토의 주력 반도체 전공정 설비이다. MAHA PECVD 설비는 2002년 소자업체에서 TEOS 산화막 공정에 대한 양산검증을 확보한 이후 현재까지 64 시스템이 제작되어 소자업체의 생산 라인에서 가동 중에 있다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.234-234
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• 2012

본 연구는 PECVD법에 의한 초발수 박막의 생성과정에서 생기는 나노 클러스터링 현상에 관하여 레이저 산란법에 의해 살펴보았다. 이와같이 레이저 산란법에 의해 플라즈마에서 나노 클러스터의 존재를 증명함으로써, 초발수 박막의 생성이 더스티 플라즈마 중 유기분자들이 분해 및 재결합 과정을 통하여 이루어졌음이 밝혀졌다.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.150-154
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• 2003

Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.241-241
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• 2009

For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000 ${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000 ${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5 $pF/mm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.221-222
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• 2009

SiN 박막을 Pulsed-PECVD를 이용하여 증착하였다. 박막특성으로는 굴절률, 플라즈마의 특성으로는 이온 에너지 분포를 duty ratio의 함수로 분석하였다. 50-100%의 범위에서 duty ratio의 감소에 따라 고 이온 에너지는 크게 증가하였으며, 반대로 저 이온 에너지는 감소되었다. 굴절률은 duty ratio의 감소에 따라 증가되었으며, 모든 duty ratio의 변화에서 1.75-1.81 사이에서 변화하였다. 40-90%의 duty ratio에서 저 이온 에너지 플럭스보다 고 이온 에너지 플럭스가 높았다. 한편, 굴절률의 변화는 $N_h$의 변화에 가장 밀접하게 연관되어 있음을 확인할 수 있었다.