Analysis of Properties and Fabrication of $1000{\AA}$ silicon nitride MIM capacitor with High Breakdown Electric Field for InGaP/GaAs HBT Application

InGaP/GaAs HBT 적용을 위한 높은 절연강토의$1000{\AA}$ 실리콘 질화막 MIM capacitor제작과 특성 분석

For InGaP/GaAs HBT applications, we have developed characterized MIM capacitors with thin $1000{\AA}$ PECVD silicon nitride which were deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $300^{\circ}C$ and had the capacitance density of 600 pF/$mm^2$ with the breakdown electric fields of 3073 MV/cm. Three PECVD process parameters were designed to lower the refractive index and then lower the deposition rate of silicon nitride films for the high breakdown electric field. At the PECVD process condition of gas mixing rate (0.92), working pressure (1.3 Torr), RF power (53 W), the AFM Rms value of about $1000{\AA}$ silicon nitride on the bottom metal was the lowest of 0.662 nmand breakdown electric fields were the highest of about 73 MV/cm.