• Title/Summary/Keyword: PCSNIM

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A study on the Design of Gain Variable Low Noise amplifier using PCSNIM techniques for Zigbee System (Zigbee시스템에 적용 하기위해 PCSNIM 기법을 사용한 가변 이득 저잡음 증폭기 설계 연구)

  • Choi, Hyuk-Jae;Choi, Jin-Kyu;Kim, Hyeong-Seok
    • 한국정보통신설비학회:학술대회논문집
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    • 2009.08a
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    • pp.121-124
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    • 2009
  • In this paper, the techniques and design focus of flexible gain coltrol of LAN(Low Noise Amplifier) using the TSMC 0.18um CMOS process. The design frequency set up a standard on 2.4GHz that is used in Zigbee system. The design concepts a basic Cascode LNA techniques and a swiching circuit consisted of 4 NMOS of load resistance, which convert the output impedenceby tuning on or off. The result show the gain change by NMOS operated swich. The simulation result is that Gain is 14.07dB-16.79dB and NF(Noise Figure) is 1.06dB-1.09dB.

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Design of a LNA-Mixer for 2.45GHz RFID Reader (2.45GHz 대역 RFID Reader 를 위한 LNA -Mixer 설계)

  • Lim, Tae-Seo;Ko, Jae-Hyeong;Kim, Hyeong-Seok
    • 한국정보통신설비학회:학술대회논문집
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    • 2007.08a
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    • pp.415-418
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    • 2007
  • This paper presents the design and analysis of LNA-Mixer for 2.45GHz RFID reader. The LNA is implemented by PCSNIM method for low power consumption. The Mixer is implemented by using the Gilbert-type configuration, current bleeding technique, and the resonating technique for the tail capacitance. The connection between the two designed circuits is made by active balun. This LNA-Mixer has about 35dB for -40dBm input RF power, LO power is 0dBm and RF frequency is 2.45 GHz and IIP3 is -4dBm. The layout of LNA-Mixer for one-chip design in a $0.18-{\mu}m$ TSMC process has 2.6mm ${\times}$ 1.3mm size.

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Design of a LNA-Mixer with on-chip balun for 2.45GHz RFID Applications (On-chip 발룬을 포함한 2.45GHz대역 RFID용 LNA-Mixer설계)

  • Lim, Tae-Seo;Ko, Jae-Hyeong;Jung, Hyo-Bin;Kim, Hyeong-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.11
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    • pp.1982-1987
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    • 2007
  • This paper presents the design and analysis of LNA-Mixer for 2.45GHz RFID reader. The LNA is implemented by PCSNIM method for low power consumption. The Mixer is implemented by using the Gilbert-type configuration, current bleeding technique and the resonating technique for the tail capacitance. The connection between the two designed circuits is made by active balun. This LNA-Mixer has about 22dB gain and 8.5dB Noise Figure for -50dBm input RF power, LO power is 0dBm, RF frequency is 2.45 GHz and IF frequency is 100kHz. The layout of LNA-Mixer for one-chip design in a 0.18-um TSMC process has $2.5mm{\times}1.0mm$ size.

The Study on Design of the CMOS Cascode LNA (CMOS 공정을 이용한 Cascode 구조의 LNA 설계)

  • Oh, Jae-Wook;Ha, Sang-Hoon;Kim, Hyeong-Seok
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1601-1602
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    • 2006
  • A cascode low noise amplifier(LNA) for a 2.45GHz RFID reader is designed using 0.25um CMOS technology. There are four LNA design techniques applied to the cascode topology. In this paper, power-constrained simultaneous noise and input matching(PCSNIM) technique is used for low power consumption and achieving the noise matching and input matching simultaneously. Simulation results demonstrate a noise figure of 2.75dB, a power gain of 10.17dB, and a dissipation power of 8.65mW with 1V supply.

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Design of Variable Gain Low Noise Amplifier Using PTAT Bandgap Reference Circuit (PTAT 밴드갭 온도보상회로를 적용한 가변 이득 저잡음 증폭기 설계)

  • Choi, Hyuk-Jae;Go, Jae-Hyeong;Kim, Koon-Tae;Lee, Je-Kwang;Kim, Hyeong-Seok
    • Journal of The Institute of Information and Telecommunication Facilities Engineering
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    • v.9 no.4
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    • pp.141-146
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    • 2010
  • In this paper, bandgap reference PTAT(Proportional to Absolute Temperature) circuit and flexible gain control of LNA(Low Noise Amplifier) which is usable in Zigbee system of 2.4GHz band are designed by TSMC $0.18{\mu}m$ CMOS library. PTAT bandgap reference circuit is proposed to minimize the instability of CMOS circuit which may be unstable in temperature changes. This circuit is designed such that output voltage remains within 1.3V even when the temperature varies from $-40^{\circ}C$ to $-50^{\circ}C$ when applied to the gate bias voltage of LNA. In addition, the LNA is designed to be operated on 2.4GHz which is applicable to Zigbee system and able to select gains by changing output impedance using 4 NMOS operated switches. The simulation result shows that achieved gain is 14.3~17.6dB and NF (Noise Figure) 1.008~1.032dB.

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A High Linearity Low Noise Amplifier Using Modified Cascode Structure (높은 선형성을 갖는 새로운 구조의 MMIC 저잡음 증폭기)

  • Park, Seung Pyo;Eu, Kyoung Jun;No, Seung Chang;Lee, Moon-Que
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.2
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    • pp.220-223
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    • 2016
  • This letter proposes a low noise amplifier which has low noise figure and high linearity simultaneously using a cascode structure with an additional transistor. The proposed structure minimizes the noise source by using optimizing transistor sizes and also improves linearity from the current bleeding technique. The device was fabricated in a $0.5{\mu}m$ GaAs pHEMT process and has noise figure of 1.1 dB, a voltage gain of 15.0 dB, an $OIP_3$ of 30.8 dBm and an input/output return loss of 11.6 dB/10.4 dB from 1.8 to 2.6 GHz.