• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.62-65
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• 2007

Conventional semiconductor processes have been utilized to fabricate 3.5-inch OTFT-driven OLEDs with a resolution of $176\;{\times}\;144$ pixels on plastic substrates. By using a PC-OVD method to deposit a pentacene layer and optimizing patterning and the following processes, we could complete a uniform and reliable integration procedure for an active matrix organic light emitting devices on a plastic substrate. The technical importance of ours is the applicability of conventional semiconductor process to organic materials on plastic substrates. Although there are many hurdles to overcome, our approach and technical improvements are proved to be applicable to plastic electronics.

• 한국전기전자재료학회논문지
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• 제21권11호
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• pp.977-980
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• 2008

We investigated the effects of power ratio on the electrical and optical properties of Au based Ga-, B- codoped ZnO(GZOB) thin films. GZOB thin films were deposited on Au based poly carbonate(PC) substrate with various power in the range from 60 to 120 W by DC magnetron sputtering. In the result, GZOB films at 100 W exhibited a low resistivity value of $1.12\times10^{-3}\Omega-cm$, and a visible transmission of 80 % with a thickness of 300 nm. This result indicated that the addition of Ga and B in ZnO films leads to the improvement of conductivity and transparent. From the result, we can confirm the possibility of the application as transparent conductive electrodes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.144-144
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• 2007

Effects of power ratio on the electrical and optical properties of Au based Ga-, B- codoped ZnO(GZOB) thin films were investigated. GZOB thin films on Au based PC flexible substrate were deposited at various power in the range from 50 to 125 W by DC magnetron sputtering. Au layer was fabricated to achieve good electrical conductivity. The presence of additional boron impurity leads to improve structural defects. Thus, the c-axis orientation along (002) plane was enhanced with the increasing of power ratio and the surface morphology of the films showed a homogeneous and nano-sized microstructure. GZOB films grown at 125W were investigated a low resistivity value of $1{\times}10^{-3}{\Omega}cm$ and a visible transmission of 80% with a thickness of 300nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.263-266
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• 2004

The stochiometric mix of evaporating materials for the $ZnGa_2Se_4$ single crystal thin films were prepared from horizental furnace. The polycrystal structure obtaind from the power x-ray diffraction was defect chalcopyrite. The lattice costants $a_0\;and\;c_0\;were\;a_0=5.51\;A,\;c_0=10.98\;A$. To obtains the single crystal thin films, $ZnGa_2Se_4$ mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current(pc/dc), maximum allowable rower dissipation(MAPD), spectral response and response time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.381-384
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• 2004

The stochiometric nix of evaporating materials for the $AgInS_2$ single crystal thin films were prepared from horizontal furnace. The polycrystal structure obtaind from the power x-ray diffraction was chalcopyrite. The lattice costants $a_0\;and\;c_0$ were $a_0=5.86(5.82)\;A,\;c_0=11.355(11.17)\;A$. To obtains the single crystal thin films, $AgInS_2$ mixed crystal were deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time.

• 한국진공학회지
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• 제4권S2호
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• pp.95-99
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• 1995

keV ion beam irradiatin for surface modification and thin film growth have been discussed. keV ion beam irradiation in reactive gas environment has been developed for improving wettability of polymer, and for enhancing adhesion to metal film, and adventages of the method have been reviewed. An epitaxial Cu film on Si(100) substrate has been grown by ionized cluster beam and changes of crystallinity and surface roughness have been discussed. Stoichiometric $SnO_2$ films on Si(100) and glass have been grown by a hybrid ion beam Deposition(2 metal ion sources+1 gas ion source), and nonstoichiometric $SnO_2$ films are controlled by various deposition conditions in the HIB. Surface modification for polymer by kev ion irradiation have been developed. Wetting angle of water to PC has been changed from 68 degree to 49 degree with $Ar^+$ irradiation and to 8 degree with $Ar^+$ irradiation and the oxygen environment. Change of surface phenomena in a keV ion beam and characteristics of the grown films are suggested.

• 한국결정성장학회지
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• 제24권6호
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• pp.229-236
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• 2014

수평 전기로에서 $MnAl_2S_4$ 다결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 $MnAl_2S_4$ 단결정 박막을 반절연성 GaAs(100)기판에 성장시켰다. $MnAl_2S_4$ 단결정 박막의 성장 조건은 증발원의 온도 $630^{\circ}C$, 기판의 온도 $410^{\circ}C$였고 성장 속도는 $0.5{\mu}m/hr$였다. 이때 $MnAl_2S_4$ 단결정 박막의 결정성의 조사에서 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 132 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. $MnAl_2S_4$/SI(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수를 293 K에서 10 K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 Varshni 공식에 따라 계산한 결과 $E_g(T)=3.7920eV-(5.2729{\times}10^{-4}eV/K)T^2/(T+786K)$였다. $MnAl_2S_4$ 단결정 박막의 응용소자인 photocell로 사용할 수 있는 pc/dc 값이 가장 큰 광전도셀은 S 증기분위기에서 열처리한 셀로 $1.10{\times}10^7$이었으며, 광전도 셀의 감도(sensitivity)도 S 증기분위기에서 열처리한 셀이 0.93로 가장 좋았다. 또한 최대 허용소비전력(MAPD)값도 S 증기분위기에서 열처리한 셀이 316 mW로 가장 좋았으며, S 증기분위기에서 열처리한 셀의 응답시간은 오름시간 14.8 ms, 내림시간 12.1 ms로 가장 빠르게 나타나, $MnAl_2S_4$ 단결정 박막을 S 분위기에서 $290^{\circ}C$로 30분 열처리한 photocell이 상용화가 가능할 것으로 여겨진다.

• Journal of Yeungnam Medical Science
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• 제9권2호
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• pp.288-301
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• 1992

소의 중추신경계의 신경전달인자에 의한 세포막에서의 정보전달 과정에 관여하는 PLC 활성화에 G-단백질의 관여 여부를 관찰하기 위하여 소의 뇌조직의 PLC ${\beta}$, ${\gamma}$ 및 ${\delta}$를 얻어 각 isozyme의 특성을 관찰하였다. 기질용액에 phosphatidyl choline(PC)을 첨가시 PLC 각 isozyme 마다 정도의 차이는 있으나 증가 양상을 보였으며 PLC ${\delta}$는 $100{\mu}M$ $Ca^{2+}$ 농도에서 높은 활성도 증가를 보였다. 세포막 소포체를 형성하기 위하여 $PIP_2$기질과 PC에 detergent로 cholate와 deoxycholate 농도에 따른 PLC 효과 관찰에서 cholate 농도 0.2%에서 1%까지 증가할 때 효소 활성도의 지속적인 상승이 관찰되었고, deoxycholate는 농도가 0.2%에서 높았다가 0.4%에서 낮아졌고 1%까지 증가함에 따라 PLC 효소 활성도는 약간 증가하였다. 기질액에 뇌추출액을 첨가하여 cholic acid 농도에 따른 PLC의 효과를 관찰한 결과 cholic acid 농도 0.2%에서 보다 1%에서 각 isozyme 모두에서 PLC활성도가 증가하였다. 소의 여러 장기에서 PLC isozyme의 분포정도를 방사면역측정방법으로 관찰하였을 때 뇌조직에 가장 많이 분포하고 있으며 특히 PLC ${\beta}$, ${\gamma}$가 많았고, PLC ${\delta}$는 부신에서 가장 많이 분포하였다. 다음으로 PLC ${\beta}$는 부신과 위, PLC${\gamma}$는 부신과 폐순이었다. PLC 효소가 활성화될 때 G-단백질의 관여 여부에 관하여 cholate 0.2%와 0.1%에서 G-단백질과 GTPrS 및 PLC의 결합정도의 관찰은 조직분쇄시료를 소의 뇌 및 부신조직을 이용하여 $^{35}S$-GTPrS 첨가시와 단세포군 항체를 이용한 경우 모두에서 1.49% 이하의 낮은 결합 정도를 관찰하였다. 그래서 정제된 PLC isozyme과 G-단백질 $Go{\alpha}$, $G{\beta}{\gamma}$, Gmix, $Gi{\alpha}$ 및 $Gt{\alpha}$ 각각에 대한 효과 관찰에 서 $Go{\alpha}$와 $G{\beta}{\gamma}$는 PLC ${\beta}$와 ${\delta}$의 활성도를 증가시켰고, PLC ${\gamma}$는 별 영향이 없었으며 Gmix에서는 세효소 모두 증가시켰다. $Gi{\alpha}$는 PLC ${\beta}$와 ${\gamma}$에서만 증가하였다. $Gt{\alpha}$는 PLC ${\beta}$ 및 ${\gamma}$에서 억제하였고 PLC ${\delta}$에서는 증가 양상을 보였다. 그러므로 PLC 활성화에 G-단백질의 관여가 인지되며 PLC isozyme과 G-단백질의 종류에 따라 대개의 경우 증가하는 경향이나 일부는 억제 내지는 별 영향이 없는 것으로 나타났다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• Journal of Microbiology and Biotechnology
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• 제11권3호
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• pp.435-442
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• 2001

Poly(3-hydroxy-5-phenylvalerate) [P(3HPV)] was efficiently accumulated from 5-phenylvalerate (5PV) in Pseudomonas putida BM01 in a mineral salts medium containing butyric acid (BA) as the cosubstrate. A nove aromatic copolyester, poly(5 mol% 3-hydroxy-4-phenylbutyrate-co- 95 mol% 3-hydroxy-6-phenylhexanoate) [P(3HPB-co-3HPC)] was also synthesized from 6-phenylhexanoate (6PC) plus Ba. The two aromatic polymers, P(3HPV) and P(3HPB-co-3HPC), were found to be amorphous and showed different glass-transition temperatures at $15^{\circ}C$ and $10^{\circ}C$, respectively. When the bacterium was grown ina medium containing 20 mM 5PV as the sole carbon source for 140 h, 0.4 g/l of dry cells was obtained in a flask cultivation and 20 wt% of P(3HPV) homopolymer was accumulated in the cells. However, when it was grown with a mixture of 2 mM 5PV and 50 mM BA for 40 h, the yield of dry biomass was increased up to 2.5 g/l and the content of P(3HPV) in the dry cells was optimally 56 wt%. This efficient production of P(3HPV) homopolymer from the mixed substrate was feasible because BA only supported cell growth and did not induce any aliphatic PHA accumulation. The metabolites released into the PHA synthesis medium were analyzed using GC or GC/MS. Two $\beta$-oxidation derivatives, 3-phenylpropionic acid and trans-cinnamic acid, were found in the 5V-grown cell medium and these comprised 55-88 mol% of the 5PV consumed. In the 6PC-grown medium containing Ba, seven ${\beta}$-oxidation and related intermediates were found, which included phenylacetic acid, 4-phenylbutyric acid, cis-4-phenyl-2-butenoic acid, trans-4-phenyl-3-butenoic acid, trans-4-phenyl-2-butenoic acid, 3-hydroxy-4-phenylbutyric acid, and 3-hydroxy-6-phenylhexanoic acid. Accordingly, based on the metabolite analysis, PHA synthesis pathways from the two aromatic carbon sources are suggested.