• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• 센서학회지
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• 제21권4호
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• pp.283-286
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• 2012

This paper presents the optical hydrogen sensor based on transparent 3C-SiC membrane and photovoltaic effect. Gasochromic materials of Pd and Pd/$WO_3$ were deposited by sputter on 3C-SiC membrane for gas sensing area. Gasochromic materials change to transparency by exposure to hydrogen. The variations of light intensity by hydrogen generate the photovoltaic of P-N junction between N-type 3C-SiC and P-type Si. Single layer of Pd shows higher photovoltaic compared with Pd/$WO_3$. However, phase transition from ${\alpha}$ to ${\beta}$ is shown at 6 %. Pd/$WO_3$ structure show the more linear response to hydrogen range of 2 % ~10 %. Also, almost 2 times fast response and recovery characteristics are shown at Pd/$WO_3$. These fast performances are come from the fact that Pd promoted the chemical reaction between hydrogen and $WO_3$.

• 한국재료학회지
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• 제18권10호
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• pp.552-556
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• 2008

Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of $B_2H_6$. The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

• 한국주조공학회지
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• 제17권4호
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• pp.347-355
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• 1997

It is well known that the coarse primary Si in hypereutectic Al-Si alloys deteriorate castability, machinability, and mechanical properties. So, many treatment has been tried to refine the primary Si increasing cooling rate and adding refinement agent. Therefore. the purpose of our work was the observation of the effect on the refinement of primary Si and the analysis of the trend to apply to the casting process by changing the amount of P addition and the cooling rate while fixing the temperature at $750^{\circ}C$ of P addition and the type of AlCuP. In the condition of amount of P addition was fixed, primary Si was finer as cooling rate increased but in case of cooling rate was fixed, the effect of refinement was resisted as incersed the amount of P addition. At a relatively slow cooling rate of $22^{\circ}C/sec$, refinement was governed by the amount of P addition rather than cooling rate. At elevated cooling rate of $51^{\circ}C/sec$ and $99^{\circ}C/sec$, the undercooling due to faster cooling rate promoted nucleation of primary Si rather than P addition more significantly.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.56-57
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• 1994

• 대한전자공학회논문지
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• 제26권6호
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• pp.30-37
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• 1989

Silane($SiH_4$), methane($CH_4$), diborane(B_2H_6)그리고 phosphine($PH_3$)을 이용하여 rf글로방전분해법으로 PIN형 a-SiC:H/a-Si:H 이종접합 태양전지를 제작하였다. $SnO_2/ITO$층 형성치 태양전지의 효율은 ITO 투명전극만의 경우보다 1.5% 향상되었다. 제작조건은 P층의 경우 $CH_4/SiH_4$의 비를 5로 하고 두께는 $100{\AA}$이었다. I층은 P층위에 증착하였으나 진성이 아니고 N형에 가깝다. 이 I층을 진성으로 바꾸기 위해서 0.3ppm의 $B_2H_6$를 $SiH_4$에 혼합하여 5000${\AA}$증착했다. 또한 N층은 $PH_4/SiH_4$의 비를 $10^{-2}$로 하여 $400{\AA}$ 증착시켰다. 그 결과 입사강도가 15mW/$cm^2$일 때 개방전압 $V_{oc}=O'$단락전류밀도 $J_{sc=14.6mA/cm^2}$, 충진율 FF=58.2%, 그리고 효율 ${eta}=8.0%$를 나타내었다. 빛의 반사에 의한 손실을 감소시키기 위하여 $MgF_2$를 유리기판위에 도포하였다. 이에 의한 효율은 0.5% 향상되어 전체적인 효율은 8.5%였다.

• 한국표면공학회지
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• 제50권3호
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• pp.219-224
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• 2017

The K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and $SiO_2/PSG/SiO_2$ passivations, respectively. Heat treatment was carried out at $400^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the $PSG/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the $PSG/SiO_2$ interfaces. K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be $SiO_2$ and $P_2O_5$, respectively

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.123-127
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• 1992

MOS 커패시터가 이온화 방사선에 노출되었을 경우, MOS 커패시터의 방사선 조사 효과는 소자의 전기적 특성 및 동작 수명에 심각한 영향을 일으킬 수 있다. MOS 커패시터는 (100) 방향의 P-type Si wafer 위에 산화막층을 $O^2$+T.C.E. 분위기에서 성장하였으며, 그 두께는 40~80 nm로 만들었다. MOS 커패시터에 대한 방사선 조사는 $Co^{60}-{\gamma}$선을 사용하였고, 조사선량은 $10^4{\sim}10^8$으로 조사하였다. MOS 커패시터에서 전기적 전도 특성의 방사선 조사효과는 산화막 두께와 조사선량을 변화하면서 측정된 P-type MOS 커패시터는 조사선량에 의해서 강하게 영향을 받는다는 것과 저전계 영역에서의 Ohmic 전류가 전체 선량에 의존한다는 것을 알았다. 이 결과는 방사선 조사에 의해 산화막 트랩전하와 산화막-반도체($SiO_2$-Si)계면 트랩전하에 의해서 설명 할 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.195-196
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• 2009

This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.

• Bulletin of the Korean Chemical Society
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• 제23권6호
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• pp.845-851
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• 2002

The synthesis of the intramolecular donor - stabilized silyl and germyl complexes of the type ($Cab^c.p) MMe_2X$ (2a:M=Si, X=Cl;2b;M= Ge, X=Cl;2e;M=Si,X=H) was achieved by the reaction of $LiCab^c,p$ (1) with $Me_2SiClX$ and $Me_2GeCl_2$ respectively. The intramolecular M←P interacion in 2a-2c is provided by $^1H$, $13^C.$, $31^P$ and $29^Si$ NMR spectroscopy. The salt elimination reactions of dichlorotetramethyldisilane and -digermane with 1 afforded the $bis(\sigma-carboranylphosphino)disilane$ and disgermane [$(Cab^C.P)MMe_2]_2(4a;M$ = Si;4b: M=Ge). The oxidative addition reaction of 4a-4b with $pd_2(dba)_3CHCl_3afforded$ the bis(silyl)-and bis(germyl)-palladium complexes. The chloro-bridged dipalladium complexes were obtained by the reaction of 2a-2b with $pd_2(dba)_3CHCl_3$ The crystal structures of 5a and 7b were determined by X-ray structural studies.