• Journal of the Korean GEO-environmental Society
• /
• v.13 no.7
• /
• pp.49-54
• /
• 2012

This study focuses on the decomposition of pentachlorophenol(PCP) by an electron beam (E-beam) process. To attain this objective, we investigated the reactive species generated from E-beam process during irradiation (reaction time 0.6 s) and G-values of PCP decomposition and effects of pH and $H_2O_2$ as an additive. The effect of pH values was independent on the decomposition of PCP. However, during E-beam irradiation a scavenging effect of added $H_2O_2$ (> 1mM) for the decomposition of PCP was shown, which was supported by the decreased amounts of $Cl^-$ produced by the decomposition of PCP. Meanwhile, oxalic acid and unidentified organic chlorine compounds as by-products were increased by the addition of $H_2O_2$. Thus, in order to enhance the efficiency of PCP decomposition, the E-beam process has to consider a proper concentration of $H_2O_2$ as a well-known source of strong oxidant hydroxyl radical.

• Journal of the Korea Institute of Information Security & Cryptology
• /
• v.19 no.5
• /
• pp.195-200
• /
• 2009

CRT-based RSA algorithm, which was implemented on smartcard, microcontroller and so on, leakages secret primes p and q by fault attacks using laser injection, EM radiation, ion beam injection, voltage glitch injection and so on. Among the many fault injection methods, voltage glitch can be injected to target device without any modification, so more practical. In this paper, we made an experiment on the fault injection attack using abnormal source voltage. As a result, CRT-RSA's secret prime p and q are disclosed by fault attack with voltage glitch injection which was introduced by several previous papers, and also succeed the fault attack with source voltage blocking for proper period.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.262-262
• /
• 2012

A multi-purpose cyclotron, MC50 has been operated to provide multi-ions of proton, deuteron and alpha at Korea Institute of Radiological and Medical Sciences (KIRAMS). Neutron is also produced through the (p,n) nuclear process with a Be target. However, a wide spectrum of current of ions is requested by beam users for carrying their various application fields. Therefore a simulation study is requested on the design of an axial injection system for high current proton and alpha beam extraction for radio-isotope productions and scientific researches. The purpose of this study is seeking a relatively simple method for the MC50 having higher alpha beam capability and also improving proton and deuteron beams currently used. We are considering two possibilities to improve the internal ion source and to install a new external axial injection system. The external injection system will be consisted of an Einzel lens, a steering magnet, a buncher, and a glazer lens placed in front of an inflector, which is located at the center of the main magnet.

• Journal of the Korean Vacuum Society
• /
• v.16 no.6
• /
• pp.414-423
• /
• 2007

Field Emission Display(FED) has significant advantages over existing display technologies, particularly in the area of small and high quality display. In order to test the feasibility of fabricating the System-on-Chip(SOC) with FED, we conducted the experiment to use the p-n junction as an electron beam source for the flat panel display. A novel structure was constructed to form p-n junctions by generating inversion layer with the electric field from the cantilever style gate. When we applied more than 220V at the cantilever style gate which has a height of $1{\mu}m$, avalanche breakdown onset was successfully achieved. The characteristics was compared with the electron emission from the ultra shallow junction in the avalanche region. The experiment result and the future direction were discussed.

• Korean Journal of Materials Research
• /
• v.15 no.6
• /
• pp.361-369
• /
• 2005

InP(100) crystal surface was irradiated by ion beams with low energy $(180\~225\;eV)$ and high flux $(\~10^{15}/cm^2/s)$, Self-organization process induced by ion beam was investigated by examining nano structures formed during ion beam sputtering. As an ion source, an electrostatic closed electron Hall drift thruster with a broad beam size was used. While the incident angle $(\theta)$, ion flux (J), and ion fluence $(\phi)$ were changed and InP crystal was rotated, cone-like, ripple, and anistropic nanostrucuture formed on the surface were analyzed by an atomic force microscope. The wavelength of the ripple is about 40 nm smaller than ever reported values and depends on the ion flux as $\lambda{\propto}J^{-1/2}$, which is coincident with the B-H model. As the incident angle is varied, the root mean square of the surface roughness slightly increases up to the critical angle but suddenly decreases due to the decrease of sputtering yield. By the rotation of the sample, the formation of nano dots with the size of $95\~260\;nm$ is clearly observed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.51-51
• /
• 2011

We have grown nanocrystalline graphite on sapphire substrate by using solid carbon source molecular beam epitaxy. Changes of structure from amorphous carbon to nanocrystalline graphite controlled by the growth temperature have been investigated by Raman spectroscopy. Raman spectra show D, G, and 2D peaks, whose intensities vary on the growth temperature. Atomic force microscopy reveals that the surface is very flat. Sapphire substrates of different cutting direction produce similar results. Simulations suggest that the interaction between carbon and oxygen causes disorders. Electrical transport measurements exhibit a Dirac-like peak, including a carrier type change by an external gate voltage bias.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.174-174
• /
• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Proceedings of the Korea Concrete Institute Conference
• /
• 2006.05a
• /
• pp.546-549
• /
• 2006

A series of seismic tests was carried out using piezoelectric elements called "bender elements". A pair of bender elements can be used as a source and a receiver respectively to measure dynamic properties of concrete. The most suitable bender elements were developed and implemented to measure P wave velocity changes due to the cracks of a concrete beam caused by bending.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.300.2-300.2
• /
• 2014

테라헤르쯔(terahertz : THz)파는 0.1~10 THz 의 범위로 적외선과 방송파 사이에 광대역 주파수 스펙트럼을 차지하고 있으며 직진성, 투과성, 그리고 낮은 에너지(meV)를 가지고 있어 비 파괴적이고 무해한 장점을 지니고 있다. Ti:sapphire laser와 같은 femto-pulse source 등이 많은 발전이 되어 현재 많은 연구와 발전이 이루어지고 있다. femto-pulse source를 이용한 THz 응용에서는 높은 저항, 큰 전자이동도, 그리고 아주 짧은 전하수명의 기판을 요구하는데 저온에서 성장한(low-temperature grown : LT) InGaAs는 격자 내에 Gallium 자리에 Arsenic이 치환 하면서 AsGa antisite가 발생하여 전하수명을 짧아지는 것을 응용하여 가장 많이 이용되고 있다. 본 연구에서는 보다 높은 저항을 얻기 위하여 molecular beam epitaxy를 이용하여 semi-insulating InP:Fe 기판위에 격자 정합된 LT-InGaAs:Be/InAlAs multi quantum well (MQW)를 well과 barrier를 가각 $10{\mu}m$ 씩 100주기 성장을 하였고 Ti와 Au를 각각 30, $200{\mu}m$로 dipole antenna를 제작 하였다. 이 때 Ti:sapphire femto-pulse laser (30 fs/90 MHz)를 excitation source로 사용하였을 때 9000 pA로 LT-InGaAs epilayer (180 pA)보다 50배 이상 큰 전류 신호를 얻을 수 있었다. THz 발생과 검출을 초소형, 초경량, 고효율로 하기 위해서는 fiber-optic를 이용해야 하는데 이때 분산과 산란 손실이 가장 적은 1550 nm 대역에서 많은 연구가 이루어 졌다. 780, 1560 nm의 mode-locking laser (90 fs/100 MHz)를 사용하여 현재 많이 이용되고 있는 Ti:sapphire femto-pulse laser와 비교하여 THz 특성 변화를 확인하는 연구를 진행 하고 있다.

• Journal of Welding and Joining
• /
• v.21 no.4
• /
• pp.63-68
• /
• 2003

Scanning electron microscopy (SEM) has been used as a surface measurement instrument and a tool for lithography in semiconductor process due to its high density localized beam. For those purposes, however, the maximum current of SEM Is less than 100pA, which is not enough fo material processing. In this paper SEM was modified to increase the amount of current reaching a specimen from gun part where current is generated, the possibility of applying SEM to material processing, especially microjoining, was investigated. The maximum current of SEM after modifications was measured up to 10$\mu$A, which is about 10$^{5}$ times greater than before modifications. Through experiments such as eutectic solder wetting on thin 304 stainless steel foil and microjoining of 10$\mu$m thick 304 stainless steel, the intensity of electron beam of SEM proved to be great enough fur material processing as heat source. And a tight jig system was found necessary to hold materials close enough fur successful microloining.