• 대한전기학회논문지:전력기술부문A
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• 제50권10호
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• pp.472-479
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• 2001

In order to prevent voltage collapse. this paper introduces the idea of the intelligent system and operating polices for a power system, then presents the results of voltage stability studies for that power system. The intelligent system includes a dedicated computer doing calculation and evaluation jobs and several intelligent relays serving as last guards to carry out the pre-set remedies. In the intelligent system, P-V curves are used to determine the operating margin from the current operating point to the maximum operating point, or the nose point. This paper suggests an operating guide for voltage stability of a power system. The effectiveness of location ad amount of load shedding for the different power load models are studied.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.907-909
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• 2009

Low voltage operated top gated polymer transistors were fabricated with a high permittivity polymer, P(VDF-TrFE) and F8T2 as a gate dielectric and semiconducting layer, respectively. The operating voltage of transistors was effectively reduced under -10 V and typical threshold voltages were as low as -1 ~ -4 V with the reasonable charge carrier mobility of $10^{-3}cm^2$/Vs for the amorphous polymer. The large hysteresis in transfer curve was improved effectively by annealing at low temperature.

• 한국산림과학회지
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• 제90권4호
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• pp.524-534
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• 2001

자작나무, 박달나무, 느티나무, 산벚나무, 고로쇠나무 1년생 유묘에 5수준의 인공피음처리를 실시하면서 이들의 수분특성에 미치는 피음의 영향을 조사하기 위하여 P-V curve에 의한 분석을 실시하였다. 최대 팽압 하에서의 osmotic potential(${\phi}_{{\pi}o}$)은 전광처리구에서 6월, 7월, 9월에 각각 -1.04~-1.27MPa, -1.03~-1.48MPa, -0.94~-1.44MPa(1차 연도), -0.90~-1.37MPa, -1.05~-1.79MPa, -0.99~-1.30 MPa(2차 연도)의 범위에서 수종이나 계절에 따라 변화를 보였다. 최대 팽압 하에서의 osmotic potential(${\phi}_{{\pi}o}$)은 전기간을 통해 조사된 모든 수종에서 전광 처리구(A)는 -0.90~-1.79MPa, 강피음구(E)는 -0.58~1.23MPa의 범위 내에서 피음수준이 높아지면서 증가하는 모습을 보였다. 초기위조점에서 측정된 수분 potential(${\phi}_{{\pi}p}$)은 전광 처리구(A)에서 6월, 7월, 9월에 각각 -1.64~-2.11MPa, -1.67~-2.15MPa, 1.47~-2.11MPa(1차 연도)과 -1.45~-2.04MPa, -1.30~-2.00MPa, -1.28~-2.33MPa(2차 연도)의 범위 내에서 변화를 보였다. ${\phi}_{{\pi}p}$ 측정치 대부분은 ${\phi}_{{\pi}o}$ 측정치에 비해서 약 0.5MPa 정도의 낮은 값을 보였다. ${\phi}_{{\pi}p}$ 측정치 또한 피음처리를 강하게 할수록 증가하는 경향을 보였으며 피음처리에 따른 ${\phi}_{{\pi}p}$ 측정치의 차이는 수종이나 생육시기에 따라 일부 예외는 있지만 일반적으로 ${\phi}_{{\pi}o}$ 측정치에서의 차이보다는 더 큰 것으로 나타났다. 최대팽압에서와 마찬가지로 초기위조점에서의 osmotic potential 측정치 대부분은 6월이나 9월에 비해 7월에 측정된 값이 다소 낮은 값을 보였다. 초기위조점에서의 상대수분함량(RWCp)은 전광조건에서 1차 연도 6월, 7월, 9월에 각각 81~88%, 71~86%, 75~84%, 2차연도에는 82~87%, 72~84%, 76~86%로 연도별 차이가 별로 크지 않은 비슷한 범위 내에 있었다. 고로쇠나무, 산벚나무에서의 상대수분함량은 자작나무 박달나무, 느티나무에 비해 다소 높은 값을 보였다. RWCp 또한 전광조건(A)에서는 71~88%, 강피음구(E)에서는 48~77%까지로 대부분 피음처리 수준이 강할수록 감소하는 변화를 나타냈다. 비록 수종이나 계절에 따라 일부 예외는 있지만 몇 가지 P-V 모수들의 변화에 미치는 피음효과는 본 연구에서 분명하게 확인할 수 있었다. 피음처리에 따른 P-V 모수들의 변화는 전해질의 축적, 세포막의 탄성, 세포액 등에서의 변화 등과 관련지어 추론될 수 있다. 그러나 P-V 모수들의 변화에 미치는 피음효과에 대한 생리적인 기작에 대하여 상세한 정보를 얻기 위해서는 반드시 더 많은 실험이 계속되어야만 할 것이다.

• 전자공학회논문지A
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• 제31A권12호
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• 한국재료학회지
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• 제29권7호
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• pp.456-462
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• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.29-34
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• 1993

In this paper, we used one-dimensional process simulator, SUPREM-II, and two-dimensional device simulator, MINIMOS 4.0 to extract optimal process parameter that can minimize degradation of device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derieved the relationship between process parameter and device characteristics. Here we have presented a method to extract process parameters from design trend curve(DTC) obtained by process and device simulations. We parameters to verify the validity of the DTC method. The experimental result of 0.8 $\mu\textrm{m}$ channel length devices that have been fabricated with optimal that reduces short channel effects, that is, good drain current-voltage characteristics, low body effects and threshold voltage of 1.0 V, high punchthrough and breakdown voltage of 12 V, low subthreshold swing(S.S) values of 105 mV/decade.

• 한국막학회:학술대회논문집
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• 한국막학회 2004년도 추계 총회 및 학술발표회
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• pp.199-203
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• 2004

Fibrous arsenic (As) adsorbent was synthesized by loading zirconium (Zr) on fibrous phosphoric adsorbent that was directly synthesized by radiation-induced graft polymerization of 2-hydroxyethyl methacrylate phosphoric acid on polyethylene-coated polypropylene nonwoven fabric. Zirconium reacted with phosphoric acid grafted in the polyethylene layer. Zirconium density of the resulting adsorbent was 4.1 mmol/g. The breakthrough curve of As(V) adsorption was independent of the flow rate up to $1300\;h^{-1}$ in space velocity. The total capacity of As(V) was 2.0 mmol/g-adsorbent at pH of 2. The adsorbed Zr(IV) could be evaluated by 0.4 M sodium hydroxide solution because negligible Zr(IV) could be found in the eluted solution.

• Advances in Traditional Medicine
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• 제8권4호
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• pp.354-364
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• 2008

The present study was carried out to investigate the antihypertensive effect of a folklore herbal formulation (HF) (300mg/kg/day; p.o.) in deoxycorticosterone acetate (DOCA)-salt induced and fructose induced hypertensive rats. In DOCA model, DOCA (15 mg/kg, s.c., twice a week) was administered to unilateral nephrectomized rats for 4 weeks. In fructose model, drinking water was replaced with 10% fructose solution for 6 weeks to induce hypertension. Systolic blood pressure (BP) was measured once every week during the treatment schedule. After completion of treatment schedule, BP and vascular reactivity to various agonists like Noradrenaline, Adrenaline, Phenylephrine and Serotonin (5-hydroxytrptamine; 5-HT) were recorded in rats of both models. A cumulative concentration response curve of 5-HT was carried out in isolated rat fundus strip of the DOCA-salt induced and fructose induced hypertensive rats. The results tend to suggest that HF possesses antihypertensive activity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.397-400
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• 1997

This paper presentes the characteristics of Si anisotropic etching and electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution. (100) Si etching rate of 0.747 $\mu\textrm{m}$/min which faster 86% than TMAH 25 wt.%/IPA 17 vol.% solution was obtained using best etching condition at TMAH 25 wt.%/IPA 17 vol.%/pyrazine 0.1 g and the etching rate of (100) Si was decreased with more additive quantity of pyrazine. I-V curve of p-type Si in TMAH/IPA/pyrazine was obtained. OCP(Open Circuit Potential) and PP(Passivation Potential) were -2 V and -0.9 V, respectively. Si diaphragms were obtained by electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution.

• Interaction and multiscale mechanics
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• 제5권1호
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• pp.57-73
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• 2012

The paper presents the analysis of two groups of piles subjected to lateral loads incorporating the non-linear behaviour of soil. The finite element method is adopted for carrying out the parametric study of the pile groups. The pile is idealized as a one dimensional beam element, the pile cap as two dimensional plate elements and the soil as non-linear elastic springs using the p-y curves developed by Georgiadis et al. (1992). Two groups of piles, embedded in a cohesive soil, involving two and three piles in series and parallel arrangement thereof are considered. The response of the pile groups is found to be significantly affected by the parameters such as the spacing between the piles, the number of piles in a group and the orientation of the lateral load. The non-linear response of the system is, further, compared with the one by Chore et al. (2012) obtained by the analysis of a system to the present one, except that the soil is assumed to be linear elastic. From the comparison, it is observed that the non-linearity of soil is found to increase the top displacement of the pile group in the range of 66.4%-145.6%, while decreasing the fixed moments in the range of 2% to 20% and the positive moments in the range of 54% to 57%.