• 제목/요약/키워드: P-V curve

검색결과 297건 처리시간 0.026초

MR영상의 뇌관류 정보 Mapping을 위한 영상후처리 시스템개발 (Development of Image Post-processing System for the Cerebral Perfusion Information Mapping of MR Image)

  • 이상민;강경훈;장두봉;김광열;김영일;신태민
    • 한국정보통신학회논문지
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    • 제4권1호
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    • pp.131-138
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    • 2000
  • This paper works on development of an algorithm for mapping of cerebral perfusion parameters using the gamma-variate curve fitting. The signal intensity variate curve according to time measured in each pixel of perfusion MRI is nonlinear, and various hemodynamic parameters are not computed accurately. Levenberg-Marquardt algorithm(LMA), nonlinear optimum algorithm with high convergent speed and stability, is used to compute them. That is, the signal intensity variate curve is fitted by the gamma-variate function. Various hemodynamic parameters - Cerebral Blood Volume(C.B.V), Mean Transit Time(M.T.T), Cerebral Blood Flow(C.B.F), Time-to-Peak(T.T.P), Bolus Arrival Time(B.A.T), Maximum Slope(M.S) - are computed using LMA.

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다중조류계산을 이용한 전압붕괴 임계점의 On-Line 계산 (On-Line Calculation of the Critical Point of Voltage Collapse Based on Multiple Load Flow Solutions)

  • 남해곤;김동준
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 하계학술대회 논문집 A
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    • pp.134-136
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    • 1993
  • This paper presents a novel and efficient method to calculate the critical point of voltage collapse. Conjugate gradient and modified Newton-Raphson methods are employed to calculate two pairs of multiple load flow solutions for two operating conditions, i.e., both +mode and -mode voltages for two loading conditions respectively. Then these four voltage magnitude-load data sets of the bus which is most susceptible to voltage collapse, are fitted to third order polynomial using Lagrangian interpolation in order to represent approximate nose curve (P-V curve). This nose curve locates first estimate of the critical point of voltage collapse. The procedure described above is repeated near the critical point and the new estimate will be very close to the critical point. The proposed method is tested for the eleven bus Klos-Kerner system, with good accuracy and fast computation time.

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HST/WFPC2 Imaging of the Dwarf Satellites And XI and And XIII : HB Morphology and RR Lyraes

  • 양성철
    • 천문학회보
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    • 제37권2호
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    • pp.68.1-68.1
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    • 2012
  • We present a comprehensive study of the stellar populations in two faint M31 dwarf satellites, And XI and And XIII. Using deep archival images from the Wide Field Planetary Camera 2 (WFPC2) onboard the Hubble Space Telepscope (HST), we characterize the horizontal branch (HB) morphologies and the RR Lyrae (RRL) populations of these two faint dwarf satellites. Our new template light curve fitting routine (RRFIT) detected RRL populations from both galaxies. The mean periods of $RR_{ab}$ (RR0) stars in And XI and And XIII are < $P_{ab}$ > = $0.621{\pm}0.040$, and < $P_{ab}$ > = $0.648{\pm}0.038$ respectively. Even though the RRL populations show a lack of $RR_{ab}$ stars with high amplitudes (Amp(V) > 1.0 mag) and relatively short periods ($P_{ab}$ ~ 0.5 days), their period - V band amplitude (P-Amp(V)) relations track the lower part of the general P-Amp(V) trend in the M31 outer halo RRL populations. The metallicities of $RR_{ab}$ stars were calculated via the [Fe/H]-log $P_{ab}$-Amp(V) relationship of Alcock et al. The metallicities thus obtained ($[Fe/H]_{And}$ $_{XI}=-1.75%$; $[Fe/H]_{And}$ $_{XIII}=-1.74$) are consistent with the values calculated from the RGB slope indicating that our measurements are not significantly affected by the evolutionary effects of RRL stars. We discuss the origins of And XI and And XIII based on a comparative analysis of the luminosity-metallicity (L-M) relation of Local Group dwarf galaxies.

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V-I Curves of p-ZnO:Al/n-ZnO:Al Junction Fabricated by RF Magnetron Sputtering

  • Jin, Hu-Jie;Jeong, Yun-Hwan;Park, Choon-Bae
    • 한국전기전자재료학회논문지
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    • 제21권6호
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    • pp.575-579
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    • 2008
  • Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ of by RF magnetron sputtering. Target was ZnO ceramic mixed with 2 wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-3}$, mobilities from 0.194 to $2.3\;cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4\;{\Omega}cm$. p-type sample has density of $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. XPS spectra show that Ols has O-O and Zn-O structures and Al2p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

전압벡터의 유효분 감도지표 dP/de 수정법에 의한 견고한 전압안정도 평가에 관한 연구 (Robust algorithm for estimating voltage stability by the modified method of sensitivity index dP/de of real value on voltage vector)

  • 송길영;김세영;김용하
    • 대한전기학회논문지
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    • 제45권1호
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    • pp.1-8
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    • 1996
  • Recently, much attention has been paid to problems which is concerned with voltage instability phenomena and much works on these phenomena have been made. In this paper, by substituting d $P_{k}$ d $e_{k}$ ( $v^{\rarw}$= e +j f) for $P_{k}$ in conventional load flow, direct method for finging the limit of voltage stability is proposed. Here, by using the fact that taylor se- ries expansion in .DELTA. $P_{k}$ and .DELTA. $Q_{k}$ is terminated at the second-order terms, constraint equation (d $P_{k}$ d $e_{k}$ =0) and power flow equations are formulated with new variables .DSLTA. e and .DELTA.f, so partial differentiations for constraint equation are precisely calculated. The fact that iteratively calculated equations are reformulated with new variables .DELTA.e and .DELTA.f means that limit of voltage stability can be traced precisely through recalculation of jacobian matrix at e+.DELTA.e and f+.DELTA.f state. Then, during iterative process divergence may be avoid. Also, as elements of Hessian mat rix are constant, its computations are required only once during iterative process. Results of application of the proposed method to sample systems are presented. (author). 13 refs., 11 figs., 4 tab.

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별의 분광형과 Johnson UBV 측광계의 온도효과

  • 박홍서;김희수;이시우
    • 천문학논총
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    • 제5권1호
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    • pp.65-84
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    • 1990
  • The temperature effects of the KNU UBV photometric system are investigated, using the HAMAMATSU 1P21 data. The variation of the passband width of V-band with temperature is about $5{\AA}/^{\circ}C$ while those of B-band and U-band are negligible. This large effect of V-band causes a significant variation of V-mag. and (B-V)-color with temperature such as ${\sim}0.02mag/^{\circ}C$ in both cases. This result strongly suggests that in the photometric observations of binary stars, the temperature effects of the response of photomultiplier and the passband of filters must be considered to avoid the systematic variation in magnitude and color particularly at the minimum of light curve.

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Ferroelectric properties of BLT films deposited on $ZrO_2$Si substrates

  • Park, Jun-Seo;Lee, Gwang-Geun;Park, Kwang-Hun;Jeon, Ho-Seung;Im, Jong-Hyun;Park, Byung-Eun;Kim, Chul-Ju
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.172-173
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    • 2006
  • Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.

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BNT-ST 세라믹스의 저온 소결과 강유전 및 압전 특성 (Low Temperature Sintering of (Bi1/2Na1/2)TiO3-SrTiO3 Ceramics and Their Ferroelectric and Piezoelectric Properties)

  • 권현희;황가희;천채일;채기웅
    • 센서학회지
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    • 제32권4호
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    • pp.238-245
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    • 2023
  • 0.75(Bi1/2Na1/2)TiO3-0.25SrTiO3 (BNT-25ST) ceramics with high densities were successfully prepared at a sintering temperature of 1,000℃ by adding a mixture of 1 mol% CuO and 0.5 mol% Na2CO3 or 0.5 mol% CuO and 0.25 mol% Na2CO3. Double polarization-electric field (P-E) hysteresis curves and sprout-shaped bipolar strain-electric field (S-E) hysteresis curves with small negative strains were observed in the pristine and CuO-added BNT-25ST ceramics whereas the Na2CO3-added sample showed similar P-E and S-E curves to a typical ferroelectric. The pristine BNT-25ST ceramics showed an extremely large strain and a large-signal piezoelectric strain constant (d33*): 0.287 % at 80 kV/cm and 850 pm/V at 20 kV/cm. Similar values, 0.248 % at 80 kV/cm and 655 pm/V at 20 kV/cm, were obtained in the CuO-added sample. However, the pristine and CuO-added samples showed large hysteresis in unipolar S-E curves at an electric field of less than 20 kV/cm. The Na2CO3-added sample showed smaller values of the strain and d33* but displayed a linear change and small hysteresis in the unipolar S-E curve. The co-added sample with CuO and Na2CO3 displayed intermediate P-E and S-E hysteresis curves.

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se2 Thin-film Solar Cell Measured at Different Irradiation Conditions

  • Lee, Kyu-Seok;Chung, Yong-Duck;Park, Nae-Man;Cho, Dae-Hyung;Kim, Kyung-Hyun;Kim, Je-Ha;Kim, Seong-Jun;Kim, Yeong-Ho;Noh, Sam-Kyu
    • Journal of the Optical Society of Korea
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    • 제14권4호
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    • pp.321-325
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    • 2010
  • We analyze the current density - voltage (J - V) curve of a Cu(In,Ga)$Se_2$ (CIGS) thin-film solar cell measured at different irradiation power densities. For the solar-cell sample investigated in this study, the fill factor and power conversion efficiency decreased as the irradiation power density (IPD) increased in the range of 2 to 5 sun. Characteristic parameters of solar cell including the series resistance ($r_s$), the shunt resistance ($r_{sh}$), the photocurrent density ($J_L$), the saturation current density ($J_s$) of an ideal diode, and the coefficient ($C_s$) of the diode current due to electron-hole recombination via ionized traps at the p-n interface are determined from a theoretical fit to the experimental data of the J - V curve using a two-diode model. As IPD increased, both $r_s$ and $r_{sh}$ decreased, but $C_s$ increased.

Modified Asymmetrical Variable Step Size Incremental Conductance Maximum Power Point Tracking Method for Photovoltaic Systems

  • Tian, Yong;Xia, Bizhong;Xu, Zhihui;Sun, Wei
    • Journal of Power Electronics
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    • 제14권1호
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    • pp.156-164
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    • 2014
  • The power-voltage (P-V) characteristic of a photovoltaic (PV) array is nonlinear and time varying with the change in atmospheric conditions. As a result, the maximum power point tracking (MPPT) technique must be applied in PV systems to maximize the generated energy. The incremental conductance (INC) algorithm, one of the MPPT strategies, is widely used for its high tracking accuracy, good adaptability to rapidly changing atmospheric conditions, and easy implementation. This paper presents a modified asymmetrical variable step size INC MPPT method that is based on the asymmetrical feature of the P-V curve. Compared with conventional fixed or variable step size method, the proposed method can effectively improve tracking accuracy and speed. The theoretical foundation and design principle of the proposed approach are validated by the simulation and experimental results.