• Proceedings of the Plant Resources Society of Korea Conference
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• 2022.09a
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• pp.74-74
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• 2022

본 연구는 붉나무의 기능성 성분의 산업화 활용을 위한 고품질의 붉나무 1년생 용기묘 대량생산을 위해 실시되었다. 붉나무 1년생 용기묘의 묘목품질의 향상을 위해 다양한 농도의 시비처리하여 우량묘 생산에 적합한 시비수준을 구명하고자 하였다. 시비실험은 무시비구 포함하여 수용성 복합비료 (N:P:K=20:20:20, v/v)를 1,000mg·L^-1, 2,000mg·L^-1, 3,000mg·L^-1 수준으로 실시하였다. 시비처리는 붉나무 용기묘의 간장과 근원경 생장은 1,000mg·L^-1 시비처리구에서 생장이 가장 좋게 나타났으며 시비수준이 증가할수록 감소하는 경향을 보였다. 뿌리형태 특성분석에서도 전체뿌리길이, 투영단면적, 표면적 및 뿌리부피가 간장과 근원경 생장과 동일한 경향을 보이는 것으로 조사되었다. 건물 생산량은 부위별 잎, 줄기, 뿌리 및 전체가 모두 1,000mg·L^-1 시비처리구에서 가장 높았으며, 그 이상의 시비수준에서는 점점 감소하는 경향을 보였다. H/D(Hight/Root collar diameter)율은 전체가 3.82(무시비구) ~ 4.90, T/R(Top/Root)율은 전체가 0.56(1,000mg·L^-1 시비처리구) ~ 0.82로 조사되었다. 시비처리 에 의한 붉나무의 LWR(Leaf dry weight ratio)은 무시비구, SWR(Shoot dry weight ratio)은 3,000mg·L^-1 시비처리구, 그리고 RWR(Root dry weight ratio)은 1,000mg·L^-1 시비처리구에서 유의적 차이를 보이며 높게 나타났다. 묘목품질지수(QI)의 경우 1,000mg·L^-1 시비처리구에서 12.13으로 다른 시비수준들보다 월등히 높았다. 본 실험의 결과를 종합하면, 뿌리발달이 좋은 우량한 붉나무 생산에 적절한 시비수준은 1,000mg·L^-1 정도인 것으로 판단된다.

• Korean Journal of Environmental Agriculture
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• v.34 no.2
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• pp.139-148
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• 2015

BACKGROUND: The aim of this study was to isolate and identify algicidal bacterium that tends to kill the toxic dinoflagellate Alexandrium catenella, and to determine the algicidal activity and algicidal range of algicide. METHODS AND RESULTS: Among of algicidal bacteria isolated in this study, NH-3 isolate was the strongest algicidal activity against A. catenella. NH-3 isolate was identified on the basis of biochemical characteristics and analysis of 16S rRNA gene sequences. The NH-3 isolate showed over 99% homology with Arthrobacter oxydans, and was designated as Arthrobacter sp. NH-3. The optimal culture conditions were $25^{\circ}C$, initial pH 7.0, and 2.0% (w/v) NaCl concentration. The algicidal activity of Arthrobacter sp. NH-3 was significantly increased to maximum value in the late of logarithmic phase. Arthrobacter sp. NH-3 showed algicidal activity through indirect attack, which excreted active substance into the culture filtrate. When 10% culture filtrate of NH-3 was applied to A. catenella, 100% of algal cells were destroyed within 30 h. In addition, the algicidal activities were increased in dose and time dependent manners. The pure algicide was isolated from the ethyl acetate extract of the culture filtrate of NH-3 by using silica gel column chromatography and high performance liquid chromatography (HPLC). We investigated the algicidal activity of this algicide on the growth of harmful algal bloom (HAB) species, including A. catenella. As a result, it showed algicidal activity against several HAB species at a concentration of $100{\mu}g/mL$ and had a relatively wide host range. CONCLUSION: Taken together, our results suggest that Arthrobacter sp. NH-3 and its algicide could be a candidate for controlling of toxic and harmful algal blooms.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

• Bulletin of the Korean Chemical Society
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• v.33 no.8
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• pp.2508-2512
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• 2012

Cold shock proteins (CSPs) are a family of proteins induced at low temperatures. CSPs bind to single-stranded nucleic acids through the ribonucleoprotein 1 and 2 (RNP 1 and 2) binding motifs. CSPs play an essential role in cold adaptation by regulating transcription and translation via molecular chaperones. The solution nuclear magnetic resonance (NMR) or X-ray crystal structures of several CSPs from various microorganisms have been determined, but structural characteristics of psychrophilic CSPs have not been studied. Therefore, we optimized the purification process to obtain highly pure Lm-Csp and determined the three-dimensional structure model of Lm-Csp by comparative homology modeling using MODELLER on the basis of the solution NMR structure of Bs-CspB. Lm-Csp consists of a ${\beta}$-barrel structure, which includes antiparallel ${\beta}$ strands (G4-N10, F15-I18, V26-H29, A46-D50, and P58-Q64). The template protein, Bs-CspB, shares a similar ${\beta}$ sheet structure and an identical chain fold to Lm-Csp. However, the sheets in Lm-Csp were much shorter than those of Bs-CspB. The Lm-Csp side chains, E2 and R20 form a salt bridge, thus, stabilizing the Lm-Csp structure. To evaluate the contribution of this ionic interaction as well as that of the hydrophobic patch on protein stability, we investigated the secondary structures of wild type and mutant protein (W8, F15, and R20) of Lm-Csp using circular dichroism (CD) spectroscopy. The results showed that solvent-exposed aromatic side chains as well as residues participating in ionic interactions are very important for structural stability. Further studies on the three-dimensional structure and dynamics of Lm-Csp using NMR spectroscopy are required.

• Analytical Science and Technology
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• v.29 no.1
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• pp.35-42
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• 2016

A new nano-composite carbon ink for the development of disposable dopamine (DA) biosensors based on screen-printed carbon electrodes (SPCEs) is introduced. The method developed uses SPCEs coupled with a tyrosinase modified nano-composite carbon ink. The ink was prepared by an “in-house” procedure with reduced graphene oxide (rGO), Pt nanoparticles (PtNP), and carbon materials such as carbon black and graphite. The rGO-PtNP carbon composite ink was used to print the working electrodes of the SPCEs and the reference counter electrodes were printed by using a commercial Ag/AgCl ink. After the construction of nano-composite SPCEs, tyrosinase was immobilized onto the working electrodes by using a biocompatible matrix, chitosan. The composite of nano-materials was characterized by X-ray photoelectron spectroscopy (XPS) and the performance characteristics of the sensors were evaluated by using voltammetric and amperometric techniques. The cyclic voltammetry results indicated that the sensors prepared with the rGO-PtNP-carbon composite ink revealed a significant improvement in electro-catalytic activity to DA compared with the results obtained from bare or only PtNP embedded carbon inks. Optimum experimental parameters such as pH and operating potential were evaluated and calibration curves for dopamine were constructed with the results obtained from a series of amperometric detections at −0.1 V vs. Ag/AgCl. The limit of detection was found to be 14 nM in a linear range of 10 nM to 100 µM of DA, and the sensor’s sensitivity was calculated to be 0.4 µAµM⁻¹cm⁻².

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.217-217
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• 2016

The amorphous InGaZnO (a-IGZO) is widely accepted as a promising channel material for thin-film transistor (TFT) applications owing to their outstanding electrical properties [1, 2]. However, a-IGZO TFTs have still suffered from their bias instability with illumination [1-4]. Up to now, many researchers have studied the sub-gap density of states (DOS) as the root cause of instability. It is well known that defect states can influence on the performances and stabilities of a-IGZO TFTs. The defects states should be closely related with the deposition condition, including sputtering power, and pressure. Nevertheless, it has not been reported how these defects are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOIs) can be generated by electron attachment in oxygen atom near target surface and then accelerated up to few hundreds eV by a self-bias; at this time, the high energy bombardment of NOIs induce defects in oxide thin films. Recently, we have reported that the properties of IGZO thin films are strongly related with effects of NOIs which are generated during the sputtering process [5]. From our previous results, the electrical characteristics and the chemical bonding states of a-IGZO thin films were depended with the bombardment energy of NOIs. And also, we suggest that the deep sub-gap states in a-IGZO as well as thin film properties would be influenced by the bombardment of high energetic NOIs during the sputtering process.In this study, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process to prevent the NOIs bombardment effects and present how much to be improved the properties of a-IGZO thin film by this new deposition method. We deposited a-IGZO thin films by MFSS on SiO2/p-Si and glass substrate at various process conditions, after which we investigated the morphology, optical and electrical properties of the a-IGZO thin films.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.5
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• pp.433-441
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• 1999

This paper presents a S-FES(Superconducting magnetic becuing Flywheel Energy Storage System) for the p purpose of replacing battery used to store the energy. Especially, the design elements of FES, such as the b beming, wheel mateηaI, and power converter, etc., are described. The design and manufacturing techniques of t the controllable IXlwer converter are proposed to generate the sinusoidal output current in the high speed operation and to get the const빠synchronous motor with halbach cuTay of high coesive I\d-Fe-B permanent magnet is used as the driver of F FES. The proposed S-FES system shows the stable rotation characteristics at high speed range about l 10,000[rpm]. To verify the validity of proposed system, the comparative study with the conventional ball b beming s~rstem is proceeded and it is well confirmed with the result of the lower friction losses of S-FES S system.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.464-470
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• 2004

The electrical stability of ZPCCY-based varistors composing of ZnO-Pr$_{6}$O$_{11}$-CoO-C $r_2$ $O_3$- $Y_2$ $O_3$ ceramics were investigated in various DC accelerated aging stress with sintering times. Sintering time greatly affected electrical properties and stability. Sintering time decreased nonlinear exponent in the range of 51.2∼23.8 and increased leakage current in the range of 1.3∼5.6 ${\mu}$A. The varistor sintered for 1 h exhibited high nonlinearity, whereas relatively low stability. On the contrary, the varistor sintered for 3 h exhibited low nonlinearity, whereas relatively high stability. But the varistor sintered for 2 h exhibited not only good nonlinearity, with nonlinear exponent of 38.6 and leakage current of 3.6 ${\mu}$A but also high stability, in which the variation rates of varistor voltage, nonlinear exponent, leakage current, and dissipation factor are -0.80%, -1.81 %, +74.4%, and +0.88%, respectively.

• Progress in Medical Physics
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• v.28 no.3
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• pp.83-91
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• 2017

In this work, we investigated the recently proposed phase-contrast x-ray imaging (PCXI) technique, the so-called single grid-based PCXI, which has great simplicity and minimal requirements on the setup alignment. It allows for imaging of smaller features and variations in the examined sample than conventional attenuation-based x-ray imaging with lower x-ray dose. We performed a systematic simulation using a simulation platform developed by us to investigate the image characteristics. We also performed a preliminary PCXI experiment using an established a table-top setup to demonstrate the performance of the simulation platform. The system consists of an x-ray tube ($50kV_p$, 5 mAs), a focused-linear grid (200-lines/inch), and a flat-panel detector ($48-{\mu}m$ pixel size). According to our results, the simulated contrast of phase images was much enhanced, compared to that of the absorption images. The scattering length scale estimated for a given simulation condition was about 117 nm. It was very similar, at least qualitatively, to the experimental contrast, which demonstrates the performance of the simulation platform. We also found that the level of the phase gradient of oriented structures strongly depended on the orientation of the structure relative to that of linear grids.