• Title/Summary/Keyword: P-V

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Electrochemical properties of $Li_{2}O-P_{2}O_{5}-V_{2}O_{5}$ Glass by Heat-treatment (열처리 조건에 따른 $Li_{2}O-P_{2}O_{5}-V_{2}O_{5}$ 유리의 전기화학적 특성변화)

  • 김윤선;손명모;이헌수;구할본
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.733-736
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    • 2001
  • Instead of a solution technigue producing amorphous LiV$_3$O$_{8}$ form, we prepared Lithium vanadate glass by melting Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$, composition in pt. crucible and by quenching on the copper plate. From the crystallization of Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$, we could abtain crystal phase, LiV$_3$O$_{8}$. The material heat-treated at lower-temperature, 25$0^{\circ}C$ was less crystalline, but had higher capacity. In present paper, we describe eletrochemical properties during crystallization process and find the best crystallization condition of Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ glass as cathod material.cathod material.

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A Novel 1700V 4H-SiC Double Trench MOSFET Structure for Low Switching Loss (스위칭 손실을 줄인 1700 V 4H-SiC Double Trench MOSFET 구조)

  • Na, Jae-Yeop;Jung, Hang-San;Kim, Kwang-Su
    • Journal of IKEEE
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    • v.25 no.1
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    • pp.15-24
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    • 2021
  • In this paper, 1700 V EPDT (Extended P+ shielding floating gate Double Trench) MOSFET structure, which has a smaller switching time and loss than CDT (Conventional Double Trench) MOSFET, is proposed. The proposed EPDT MOSFET structure extended the P+ shielding area of the source trench in the CDT MOSFET structure and divided the gate into N+ and floating P- polysilicon gate. By comparing the two structures through Sentaurus TCAD simulation, the on-resistance was almost unchanged, but Crss (Gate-Drain Capacitance) decreased by 32.54 % and 65.5 %, when 0 V and 7 V was applied to the gate respectively. Therefore, the switching time and loss were reduced by 45 %, 32.6 % respectively, which shows that switching performance was greatly improved.

A Study on the Channeling Effect of Ultra Low Energy B, P and As Ion Implant to Form Ultra-Shallow Junction of Semiconductor Device (초미세 접합형성을 위한 극 저 에너지 B, P 및 As 이온주입시 채널링 현상에 관한연구)

  • 강정원;황호정
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.3
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    • pp.27-33
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    • 1999
  • We have investigated the ultra-low energy B, P, and As ion implantation using upgraded MDRANGE code to study formation of nanometer junction depths. Even at the ultra-low energies simulated in this paper, it was revealed that ion channeling should be carefully considered. It was estimated that ion channelings have much effect on dopant profiles when B ion implant energies were more than 500 eV, P more than 2 keV and As approximately more than 4 keV. When we compared 2-dimensional dopant profiles of 1 keV B with that of tilted one, 2 keV P with tilt, and 5 keV As with tilt, we could find that most channeling cases occurred not lateral directions but depth directions.

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Structural dependences of the extinction in an 1.55 $1.55{\mu}m$ InGaAsP/InGaAsP multiple-quantum-well electro-absorption modulator (1.55 $1.55{\mu}m$ InGaAsP/InGaAsP MQW 광흡수 변조기에서 구조변수가 소광특성에 미치는 영향)

  • 민영선;심종인;어영선
    • Korean Journal of Optics and Photonics
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    • v.12 no.1
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    • pp.40-47
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    • 2001
  • The structural dependence of the performance of an 1.55 $1.55{\mu}m$ InGaAsPIInGaAsP MQW electro-absorption modulator for highspeed digital fiber communication was systematically investigated. The effects of n-doped SCH region length $t_n$ as well as the general structure parameters including quantum well number $N_w$, well-thickness $t_w$, detuning wavelength $\Delta\lambda$, and device length L were thoroughly analyzed. Thereby, a high-pelfoIDlance electro-absorption modulator with device length L of $100{\mu}m$ was successfully designed. The designed structure showed excellent characteristics that have residual loss less than -1.5 dB, operational voltage from 0 V to -2V, and extinction ratios of -2.92 dB at $V_{\alpha}$=-1 V and -10 dB at $V_{\alpha}$=-2V.X>=-2V.

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Pilot Scale Production of Poly (3-Hydroxybutyrate-co-3-hydroxy-valerate) by Fed-batch Culture of Recombinant Escherichia coli

  • Park, Jong-il;Lee, Sang-Yup;Kyungsup Shin;Lee, Woo-Gi;Park, Si-Jae;Chang, Ho-Nam;Chang, Yong-Keun
    • Biotechnology and Bioprocess Engineering:BBE
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    • v.7 no.6
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    • pp.371-374
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    • 2002
  • Production of poly(3-hydroxybutyrate-co-3-hydroxyvalerate)[P(3HB/V)], by fed-batch culture of recombinant Escherichia coli harboring a plasmid containing the Alcaligenes latus polyhy-droxyalkanoate (PHA) biosynthesis genes, was examined in two pilot-scale fermentors with air supply only, In a 30 L fermentor having a XLa value of 0.11 S­$^1$, the final P(3HB/V) concentration and the P(3HB/V) content obtained were 29.6 g/L and 70.1 wt%, respectively giving a productivity of 1.37 g P(3HB/V)/L-h. In a 300 L fermentor having a XLa of 0.03 S­$^1$, the P(3HB/V) concentration and the P(3HB/V) content were 20.4 g/L and 69 wt%, respectively giving a productivity of 1.06g P(3HB/V)/L-h. These results suggest that economical production of P(3HB/V) is possible by fed-batch culture of recombinant E. coli in a large-scale fermentor having low KLa value.

Crystallization properties of $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ Glass for cathod material (정극 재료용 $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ 유리의 결정화 특성)

  • Son, Myung-Mo;Lee, Heon-Su;Gu, Hal-Bon;Jeong, In-Seong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.311-315
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    • 2000
  • Vanadate glass in the $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ system containing 10mol% glass fonner, $P_2O_5$ and $Bi_2O_3$ was prepared by melting the batch in pt. crucible followed by Quenching on the copper plate. We found that $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass-ceramics obtained from nucleation of glass showed signifieantly higher capacity and longer cycle life than conventionally made crystalline $LiV_3O_{8}$. In the present paper, we describe the charge / discharge properties during crystallization process and find the best crystallization condition of $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass as cathod material.

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Preparation and Luminescence Properties of Y(P,V)O4:Eu3+ Phosphor using Impregnation Method (함침법에 의한 Y(P,V)O4:Eu3+ 형광체의 합성 및 발광특성)

  • Han, Cheong-Hwa;Kim, Soo-Jong
    • Journal of the Korean Ceramic Society
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    • v.48 no.6
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    • pp.565-570
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    • 2011
  • The $Eu^{3+}$ doped $Y(P_x,V_{1-x})O_4$ (0 ${\leq}$ x ${\leq}$ 1) phosphors were synthesized by solid-state and impregnation method and investigated as potential red-emitting phosphors for a plasma display panel(PDP). The optimal substitution proportion of P for V was determined to be 60 mol%, for $Y(P_x,V_{1-x})O_4$ doped with 8 mol% $Eu^{3+}$. The VUV PL spectra and SEM for the synthesized phosphors were measured and compared against those of a commercial red-emission phosphor. The $Y(P_x,V_{1-x})O_4$:$Eu^{3+}$ phosphors exhibited strong red at around 592, 618 and 698 nm. The emission intensity and particle size of the phosphors were controlled by preparation conditions.

Studies on the Optimal Culture Conditions for Itaconic Acid Production by Aspergilus Terreus (Aspergillus Terreus에 의한 이타콘산 생산을 위한 최적배양조건에 관한 연구)

  • 박승원;김승욱
    • KSBB Journal
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    • v.9 no.4
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    • pp.436-442
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    • 1994
  • The production of itaconic acid by Aspergillus terreus NRRL 1960 was studied. The optimal culture conditional such as pH, inoculum size and medium composition were established. Maximum production of itaconic acid, $19.18g/\ell$, was obtained when the cultivation was carried out at $37^{\circ}C$ and pH 2.5 for 7days, with medium containing 5%(w/v) glucose, 0.5%(w/v) NH4Cl, 0.2%(w/v) yeast extract 0.1%(w/v) CaC12, 0.1%(w/v) MgSO4 and 0.2%(w/v) NaCl. A proper medium for inoculum culture was found to be 2%(w/v) malt extract. The batch production of itaconic acid with free cells in a stirredtank reactor was not efficient compared to the shake-flask culture.

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Crystallization and Electrical Conductivity of $CuO-P_{2}O_{5}-V_{2}O_{5}$ Glass for Solid-state Electrolyte (고체전해질용 $CuO-P_{2}O_{5}-V_{2}O_{5}$유리의 결정화와 전기전도도)

  • 손명모;이헌수;구할본
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.1018-1021
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    • 2001
  • 1018-1021 The CuO-P$_2$O$_{5}$ containing P$_2$O$_{5}$ as glass-former were prepared by press-quenching method on the copper plate. By post-heat treatment of these glasses, the CuO-P$_2$O$_{5}$ -V$_2$O$_{5}$ -g1ass ceramics was obtained and the crystallization behavior and dc conductivities were investigovted. The heat-treated glass-ceramics decreased in electrical conductivity by the order of 10$^1$ compared to amorphous glass. The linear relationship between In($\sigma$T) and T$^{-1}$ indicated that electrical conduction in CuO-P$_2$O$_{5}$ -V$_2$O$_{5}$ -gass occurred by a small polaron hopping.

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