• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.46-50
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• 2008

Optical images on the porous silicon exhibiting Febry-Perot fringe pattern have been prepared by using an electrochemical etching of p-type silicon wafer (boron-doped,<100> orientation, resistivity $0.8{\sim}1.2m{\Omega}-cm$) and beam projector. The images remained in the substrate displayed an optical images correlating to the optical pattern and could be useful for optical data storage. A decrease in the effective optical thickness of the Febry-Perot layers was observed, indicative of a change in refractive index induced by exposing of porous silicon to the white light. This provides the ability to fabricate complex optical encoding in the surface of silicon.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.192-195
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• 2012

We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.593-595
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• 1995

X-Ray Diffraction method that gives direct information about the deformation of crystal lattice is used for the determination of profiles of the residual stress along the depth of heavily boron doped silicon. The residual stress distribution is obtained by XRD method as measuring the deformation of the front surface of the $p^+$ silicon layer fabricated through different etch time. It is determined that the compressive residual stress exists in the most region except the font surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.346.2-346.2
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• 2016

The rear side contact recombination in the crystalline silicon solar cell could be reduced by back surface field. We formed polycrystalline silicon as a back surface field through crystallization of amorphous silicon. A thin silicon oxide applied to the passivation layer. We used quasi-steady-state photoconductance measurement to analyze electrical properties with various annealing condition. And, blister formed on surface of wafer during the annealing process. We observed the blister after varied annealing process with wafer of various surface. Shape and density of blister is influenced by various annealing temperature and process time. As the annealing temperature became higher, the average diameter of blister is decreased and total number of blister is increased. The sample with the $600^{\circ}C$ annealing temperature and 1 min annealing time exhibited the highest implied open circuit voltage and lifetime. We predicted that the various shape and density of blister affects the lifetime and implied open circuit voltage.

• Journal of Integrative Natural Science
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• v.7 no.4
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• pp.221-226
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• 2014

Optically encoded porous silicon smart particles were successfully fabricated from the free-standing porous silicon thin films using ultrasono-method. DBR PSi was prepared by an electrochemical etch of heavily doped $p^{{+}{+}}$-type silicon wafer. DBR PSi was prepared by using a periodic pseudo-square wave current. The surface-modified DBR PSi was prepared by either thermal oxidation or thermal hydrosilylation. Free-standing DBR PSi films were generated by lift-off from the silicon wafer substrate using an electropolishing current. Free-standing DBR PSi films were ultrasonicated to create DBR-structured porous smart particles. Optical characteristics of porous smart particles were measured by FT-IR spectroscopy. The surface morphology of porous smart particles was determined by FE-SEM.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.10
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• pp.1019-1023
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• 2012

In this research, a novel direct-aluminum-heating-induced crystallization method was developed for the purpose of application to solar cells. By applying a constant current of 3 A to an aluminum thin film, a 200-nm-thick amorphous silicon (a-Si) thin film with a size of $1cm{\times}1cm$ can be crystallized into a polycrystalline silicon (poly-Si) thin film within a few tens of seconds. The Raman spectrum analysis shows a peak of 520 $cm^{-1}$, which verifies the presence of poly-Si. After removing the aluminum layer, the poly-Si thin film was found to be porous. SIMS analysis showed that the porous poly-Si thin film was heavily p-doped with a doping concentration of $10^{21}cm^{-3}$. Thermal imaging shows that the crystallization from a-Si to poly-Si occurred at a temperature of around 820 K.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.4
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• pp.506-514
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• 1986

Experimental results are reported concerning temperture effects from room temperature to 100\ulcorner on the optical properties of N-and P-type hydrogenated amorphous silicon films prepared by RF glow discharege. Optical absorption coefficient and optical bandgap have been measured and analyzed as a function of temperature. Optical absorption coefficient increase monotonically with temperature, while the optical bandgape of doped amorphous silicons decrease linearly by about 4-7x10**-4 [ev/k].

• 제어로봇시스템학회:학술대회논문집
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• 1988.10a
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• pp.620-626
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• 1988

GaAs solar cells may be the most attractive and efficient power source of a satellite. GaAs is more radiation tolerant and less temperature sensitive than widely used silicon. $Al_{x}$ Ga$_{1-x}$ As/GaAs solar cells have been designed and fabricated by Liquid Phase Epitaxial method. GaAs solar cells, of which structure is about 0.2 .mu.m p$^{+}$ - window layer, 0.6-1.O .mu.m Ge-doped p-layer. 3.mu.m n-GaAs layer and n$^{+}$ - buffer layer, have been characterized as a function of operating temperature from 25 .deg.C to 130 .deg.C. Open circuit voltage decreases linearly with increasing temperature by 1.4-1.51 mV/ .deg.C while degradation of silicon solar cells is about 2.2-2.5 mV/ .deg.C, short circuit current does not increase much with increasing temperature. Relative efficiency decreases with increasing of temperature by about 0.21-0.29 %/ .deg.C. Efficiency degradation of silicon solar cells with temperature is known to be about 0.5%/ .deg.C and our results show GaAs solar cells may be an excellent candidate for concentrated solar cells.ells.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.5
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• pp.38-45
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• 1989

We have studied the electrical characteristics of the hydrogenated amorphous silicon (a-Si:H) ambiploar thin film transistors (TET'S)using 100ppm boron-doped a-Si:H as an active layer. The enhancement of drain current due to the double injection behavior has been observed in the p-channel operation of the TFT. The drain current decreases with time in streched exponential form when the gate voltage is positive. The result indicates that the dangling bonds created by electron accumulation show identical time dependence as the diffusion of hydrogen in the film. We observed the experimental evidence that the doping efficiency changes either when the gate bias is applied or when the light is illuminated on boron-doped a-Si:H.