• Journal of IKEEE
• /
• v.26 no.4
• /
• pp.705-709
• /
• 2022

The effect of the annealing temperature of the poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE)) solid electrolyte layer on the electrical properties of the P(VDF-TrFE)-based memristor was analyzed. In morphological analyses, the P(VDF-TrFE) thin film with 200℃ annealing temperature (200P(VDF-TrFE)) was shown to have surface roughness ≈5 times larger and thickness ≈20% smaller than that with 100℃ annealing temperature (100P(VDF-TrFE)). Compared to the 100P(VDF-TrFE) memristor (M100), the set voltage of the 200P(VDF-TrFE) memristor (M200) decreased by ≈50% and the magnitude of its reset voltage increased by ≈30%. Moreover, M200 was found to have better memory retention characteristics than M100. These differences were attributed to relatively strong local electric fields inside M200 compared to M100. This study suggests the importance of the annealing temperature in polymer memristors.

• Journal of Sensor Science and Technology
• /
• v.12 no.1
• /
• pp.10-15
• /
• 2003

$PbTiO_3$/P(VDF/TrFE) thin film for pyroelectric infrared sensor's sensing materials have been fabricated by spin coating technique. 65 wt% VDF and 35 wt% TrFE were for P(VDF/TrFE) powder. $PbTiO_3$ powder was used for a ceramic - polymer composites materials. Surface of composite thin film by ceramic fraction factor was observed by SEM. The $PbTiO_3$/P(VDF/TrFE) thin film capacitancy, dielectric constant and dielectric loss measured by impedence analyzer(HP4192A) and pyroelectric coefficient was measured by semiconductor parameter analyzer(HP4145B).

• Polymer(Korea)
• /
• v.35 no.5
• /
• pp.375-377
• /
• 2011

$PbTiO_3$/P(VDF/TrFE) 0~3 composites thin films with 0.10 and 0.13 of ceramic volume fraction factor have been fabricated by two-step spin coating technique and analyzed. 0~3 connectivity of $PbTiO_3$/P(VDF/TrFE) composites film was observed successfully by SEM micrography. The SEM picture confirmed 0~3 connectivity. And, in all the properties, 0~3 $PbTiO_3$/P(VDF/TrFE) composites film was superior to P(VDF/TrFE) copolymer. Therefore, with a good low-dielectric constant and a high pyroelectric coefficient, the composite thin films can be used for a new pyroelectric infrared sensor of higher performance.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.1
• /
• pp.1-5
• /
• 2001

P(VDF/TrFE) copolymer thin films with 70/30 and 80/20 mol% VDF (polyvinylidene fluoride) and TrFE (trifluoroethylene) rates were prepared by using a vapor deposition method, During thin films were prepared, the substrate temperatures were maintained at 30 $^{\circ}C$ and 120 $^{\circ}C$, and the heating source temperature was fixed at 350 $^{\circ}C$. Contary to PVDF homopolymer, P(VDF/TrFE) copolymers showed the Curie point(Tc) below the melting point. The Curie point (Tc) and the melting point of the P(VDF/TrFE) copolymers were changed as a function of substrate temperature and the VDF mol%. The Curie point and the melting point of P(VDF/TreFE) thin films decreased and increased with increasing substrate temperature, respectively. Also with increasing VDF mol%, the melting point decreased slightly, however the Curie point increased.

• Journal of Sensor Science and Technology
• /
• v.20 no.2
• /
• pp.114-117
• /
• 2011

A thick 25 ${\mu}m$ thickness poled P(VDF/TrFE) film pyroelectric infrared ray sensor has been fabricated and then thin 1.6 ${\mu}m$ thickness P(VDF/TrFE) film pyroelectric infrared ray sensor has been fabricated also. These thick and thin P(VDF/TrFE) film pyroelectric infrared ray sensor was mounted in TO-5 housing to detect infrared light of 5.5 ~ 14 ${\mu}m$ wavelength for human body detecting with each other. The noise output voltage of the thick P(VDF/TrFE) film pyroelectric infrared ray sensor were 380 mV and NEP(noise equivalent power) is $3.95{\times}10^{-7}$ W which is the similar value with the commercial pyroelectric infrared ray sensor using ceramic materials as a sensing material. The NEP and specific detectivity $D^*$ of the thin P(VDF/TrFE) film pyroelectric infrared ray sensor were $2.13{\times}10^{-8}$ W and $9.37{\times}106$ cm/W under emission energy of 13 ${\mu}W/cm^2$ respectively. These result caused by lower thermal diffusion coefficient of a thin 1.6 ${\mu}m$ thickness PVDF/TrFE film than the thick 25 ${\mu}m$ thickness poled P(VDF/TrFE) film pyroelectric infrared ray sensor.

• Composites Research
• /
• v.28 no.3
• /
• pp.75-80
• /
• 2015

Poly(vinylidene fluoride-trifluoroethylene; P(VDF-TrFE)) is one of the most promising electroactive polymers with numerous application potentials in many fields of industry. Because of its good electro-mechanical properties P(VDF-TrFE) has been used for a number of sensors and actuators and also can be used for monitoring composite structure behaviors as a sensor. Three different ways (Electrical poling, annealing-cooling, and pressing) to enhance ${\beta}$-phase of P(VDF-TrFE) film were carried out. A microscopic analysis was conducted using X-ray diffraction to investigate the effect of such treatments on piezoelectric properties of P(VDF-TrFE) film. From the results, poling, annealing-cooling, and pressing were all effective to enhance ${\beta}$ crystallinity of P(VDF-TrFE) film and the maximum increase rate was 62.80% from 45.29% of the control group.

• Journal of Sensor Science and Technology
• /
• v.9 no.1
• /
• pp.9-14
• /
• 2000

Dielectric characteristics of P(VDF/TrFE) film manufactured using spin coating technique have been investigated. To improve the crystallinity and quality of film, the film was three step annealed. Simple etching process and conditions for P(VDF/TrFE) film were established using top electrode as a mask. Poling is performed by several steps. $1.87\;{\mu}m$ thick P(VDF/TrFE) films were obtained with conditions such that the solution of 10 wt% concentration was spun at 3000rpm for 30 seconds. Before poling, dielectric constant and dielectric loss of P(VDF/TrFE) film were 13.5 and 0.042, respectively. After poling, dielectric constant and dielectric loss of P(VDF/TrFE) film were 11.5 and 0.037, respectively.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.4C no.2
• /
• pp.73-76
• /
• 2004

0-3 PbTiO$_3$/P(VDF/TrFE) nanocomposite thin films for passive pyroelectric infrared sensors were fabricated by a two-step spin coating technique. 65wt% VDF and 35 wt% TrFE was formed into a P(VDF/TrFE) powder. Nano size PbTiO$_3$ powder was used. 0-3 connectivity of PbTiO$_3$/P(VDF/TrFE) composite film was successfully achieved and observed using SEM photography. The dielectric constant and pyroelectric coefficient were measured and compared with P(VDF/TrFE). A very low dielectric constant (13.48 at 1KHz and sufficiently high pyroelectric coefficient (3.101 nC/$\textrm{cm}^2$ㆍk at 5$0^{\circ}C$) were measured. This nanocomposite can be used for a new pyroelectric infrared sensor to achieve better performance.

• Korean Journal of Materials Research
• /
• v.17 no.4
• /
• pp.236-238
• /
• 2007

[ 0-3PbTiO_3/P$ ](VDF/TrFE) nanocomposites thin films for passive pyroelectric infrared sensor have been fabricated by two-step spin coating technique. 65 wt% VDF and 35 wt% TrFE was formed to a P(VDF/TrFE) poder Nano size $PbTiO_3$ powder was used. 0-3 connectivity of $PbTiO_3$(VDF/TrFE) composites film is achieved and also observed by SEM photography successfully. The dielectric constant, and pyroelectric coefficient measured and compared with P (VDF/TrFE). A very low dielectric constant (13.48 at 1 kHz) and high enough pyroelectric coefficient (3.101 $nC/cm^2$.k at $50^{circ}C$) neasured. This nanocomposites can be used for a new pyroelectric infrared sensor for better performance.

• Journal of IKEEE
• /
• v.22 no.1
• /
• pp.209-212
• /
• 2018

In this work, we developed P(VDF-TrFE) organic/ferroelectric material based metal-ferroelectric-metal (MFM) capacitors in order to improve the switching characteristics of gallium nitride (GaN) heterojunction field-effect transistors (HFET). The 27 nm-thick P(VDF-TrFE) MFM capacitors exhibited about 60 ~ 96 pF capacitance with a polarization density of $6{\mu}C/cm^2$ at 4 MV/cm. When the MFM capacitor was connected in series with the gate electrode of GaN HFET, the subthreshold slope decreased from 104 to 82 mV/dec.