• Bulletin of the Korean Chemical Society
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• 제28권11호
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• pp.2003-2008
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• 2007

The aminolysis of diphenyl thiophosphinic chloride (2) with substituted anilines in acetonitrile at 55.0 oC is investigated kinetically. Kinetic results yield large Hammett ρX (ρnuc = ?3.97) and Bronsted βX (βnuc = 1.40) values. A concerted mechanism involving a partial frontside nucleophilic attack through a hydrogen-bonded, four-center type transition state is proposed on the basis of the primary normal kinetic isotope effects (kH/kD = 1.0-1.1) with deuterated aniline (XC6H4ND2) nucleophiles. The natural bond order charges on P and the degrees of distortion of 42 compounds: chlorophosphates [(R1O)(R2O)P(=O)Cl], chlorothiophosphates [(R1O)(R2O)P(=S)Cl], phosphonochloridates [(R1O)R2P(=O)Cl], phosphonochlorothioates [(R1O)R2P(=S)Cl], chlorophosphinates [R1R2P(=O)Cl], and chlorothiophosphinates [R1R2P(=S)Cl] are calculated at the B3LYP/ 6-311+G(d,p) level in the gas phase.

• 한국미생물학회:학술대회논문집
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• 한국미생물학회 2004년도 International Meeting of the Microbiological Society of Korea
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• pp.65-67
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• 2004

O-GlcNAcylation of p53 has been already identified and reported, but the function of O-GlcNAc on p53 has not been studied well. In this report, the general function of O-GlcNAc modification on p53 has been investigated using mouse fibroblast cell, L929. When streptozotocin (STZ), a non-competitive O-GlcNAcase inhibitor was treated to L929, O-GlcNAc modification level was dramatically increased on nucleocytoplasmic proteins, including p53. Because it has been already reported that $TNF\alpha$ induced the production of p53 in L929, $TNF\alpha$ was treated to obtain more p53. Approximately two times more amount of p53 was found from the cells treated STZ and $TNF\alpha$ simultaneously compared to the cell treated $TNF\alpha$ alone. The p53 increment in the presence of STZ was not caused by the induction of p53 gene expression. When new production of p53 induced by the $TNF\alpha$ was inhibited by the treatment of cycloheximide, O-GlcNAc modification decreased and phosphorylation increased on pre-existing p53 after $TNF\alpha$ treatment. But in the presence of STZ and $TNF\alpha$ at the same time, more O-GlcNAcylation occurred on p53, The level of ubiquitination on p53 was also reduced in the presence of STZ. Approximately three times less amount of Mdm2 bound to this hyperglycosylated p53. From this result it might be concluded that treatment of STZ to inhibit O-GlcNAcase increased O-GlcNAc modification level on p53 and the increment of O-GlcNAc modification stabilized p53 from ubiquitin proteolysis system.

• 전기전자학회논문지
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• 제17권2호
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• Asian-Australasian Journal of Animal Sciences
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• 제33권6호
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• pp.992-1001
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• 2020

Objective: This study was conducted to investigate the effects of hot-melt extruded ZnO nano-particles (HME-ZnO) as an alternative for P-ZnO on growth performance, nutrient digestibility, Zn bioavailability, intestinal microbiota, and intestinal morphology of weanling pigs. Methods: A total of 450 piglets (Landrace×Yorkshire×Duroc) were randomly allotted to five treatments based on initial body weight and sex. The experimental diets were fed in a meal form as phase 1 from d 0 to 14 and phase 2 from d 15 to 28. Treatments were the control diet without ZnO supplementation, the diet containing 2,500 ppm Zn as ZnO, and three diets containing 500, 1,000, or 2,500 ppm Zn as HME-ZnO. Results: The overall result showed a higher (p<0.01) average daily gain in weanling pigs fed ZnO-supplemented diets in comparison to the control diet. There was a decrease (p<0.01) in fecal score in the ZnO-supplemented diets. Dietary supplementation of ZnO improved (p<0.05) crude protein digestibility. The weanling pigs fed the P-ZnO diet had a lower (p<0.01) Zn digestibility in the feces than HME-ZnO supplemented treatments. Weanling pigs fed diets supplemented with ZnO had greater (p<0.05) Lactobacillus spp. populations and lower Clostridium spp. (p<0.05) and Coliforms (p<0.01) populations in the ileum. Weanling pigs fed diets supplemented with increasing concentrations of HME-ZnO linearly decreased Clostridium spp. (p<0.05) and Coliforms (p<0.01) in the ileum. Lower (p<0.05) Clostridium spp. and Coliforms counts in the colon were observed in pigs fed with ZnO-supplemented diets. Weanling pigs fed diets supplemented with ZnO showed a greater (p<0.01) villus height in the duodenum. Conclusion: Dietary supplementation of HME-ZnO and P-ZnO showed a potential to improve the digestibility of protein, intestinal Coliform and Clostridium, villus height in duodenum and ileum. Moreover, HME-ZnO showed a higher Zn digestibility compared with P-ZnO.

• 분석과학
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• 제17권3호
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• pp.282-288
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• 2004

Inclusion selectivities of the cyanocadmate host complexes with ammonium oniums, $[Cd_x(CN)_{2x}][onium{\cdot}zG]$ (onium = $NMe_3Et^+$, $NMeEt{_3}^+$ and $NEt{_4}^+$, G = guest), have been investigated for $C_6H_6$ (B), PhMe (T), PhEt (E), ortho (O), meta (M), and para (P) isomers of $C_6H_4Me_2$ as the aromatic guest molecules. From the binary, ternary, quaternary and quinary mixed guests of B, T, E, O, M and P, the order of preference in the $NMe_3Et+$-host is $B{\gg}$T>P${\fallingdotseq}O{\fallingdotseq}M$ and E>O${\gg}P{\fallingdotseq}M$; in the $NMeEt{_3}^+$-host is T>B>P${\gg}O{\fallingdotseq}M$ and E>P${\gg}$M>O; in the $NEt{_4}^+$-host is $B{\gg}T{\fallingdotseq}O{\fallingdotseq}M{\fallingdotseq}P$. However, the $NEt{_4}^+$-host complexes of E, O, M and P mixed-guests were not obtained. These inclusion selectivities were compared to our previous results of the $NMe{_4}^+$-host; T>B>P${\gg}$M>O and E>P${\gg}$M>O.

• 한국진공학회지
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• 제20권1호
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• pp.50-56
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• 2011

본 논문에서는 버퍼막 두께 및 열처리 온도에 따른 ZnO/b-ZnO/p-Si(111) 기반 이종접합 다이오드 전류 특성에 대한 연구가 진행되었고, b-ZnO (ZnO buffer layer) 버퍼막 두께 및 열처리 온도에 따른 p-Si(111) 기판 위에 증착시킨 ZnO 박막의 구조적, 전기적 특성 또한 연구되었다. X-ray diffraction (XRD) 방법을 이용하여 ZnO 박막의 구조적 특성을 측정하였고, semiconductor parameter analyzer를 이용하여 ZnO/b-ZnO/p-Si(111) 이종접합 다이오드의 I-V 특성을 평가하였다. XRD 분석 결과 버퍼막 열처리 온도 $700^{\circ}C$, 버퍼막 두께 70 nm에서 ZnO 박막은 우세한 (002) 방향의 c-축 배향성을 갖는 육방정계(hexagonal wurtize) 결정 구조를 나타내었다. 전기적 특성인 운반자 농도, 비저항 값의 경우에는 버퍼막 열처리 온도 $700^{\circ}C$, 버퍼막 두께 50 nm에서 우수한 전기적 특성(비저항: $2.58{\times}10^{-4}[{\Omega}-cm]$, 운반자 농도: $1.16{\times}10^{20}[cm^{-3}]$)을 보였다. 또한 ZnO/b-ZnO/p-Si(111) 이종접합 다이오드의 전류 특성은 버퍼막 열처리 온도 $700^{\circ}C$에서 버퍼막 두께가 증가할수록 전류 특성이 향상되는 경향을 보였다.

• 대한약학회:학술대회논문집
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• 대한약학회 2001년도 Proceedings of the Pharmaceutical Society of Korea
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• pp.171.2-171.2
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• 2001

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.408-409
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• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• 한국산학기술학회논문지
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• 제8권3호
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• pp.472-476
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• 2007

본 연구에서는 p-형 ZnO 박막 증착법 및 특성의 안정화 방안에 대하여 조사하였다. p-형 ZnO는 AlAs와 ZnO target을 사용하여 RF magnetron sputtering 기법으로 co-deposition하여 제작하였으며 특성 변화를 조사하기 위해 $250^{\circ}C$에서 144시간까지 스트레스 인가 시간을 변화하며 Photoluminescence 및 Hall 측정을 수행하였다. 연구 결과 co-deposition 은 p-형 박막을 제작하기 위해 유효한 방법인 것으로 밝혀졌으며, 특히 고온에서 이루어지는 과정을 수행하기 전 30% H2O2용액에 1분간 처리하는 것이 이후의 열처리 과정 중 발생하는 특성 변화를 크게 억제하는 것으로 관찰되었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.87.1-87.1
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• 2012

넓은 밴드갭 (3.37eV)과 높은 엑시톤 결합에너지 (60meV)를 가지는 ZnO 물질은 ultra violet light 센서 및 light emitting diode (LED)의 재료로써 많은 연구가 진행되고 있다. 특히 나노와이어 구조를 이용하여 소자를 만들 경우 양자효과와 1차원적 캐리어 수송경로 효과로 인하여 그 특성을 보다 향상 시킬 수 있다. 나노와이어를 이용한 이종접합 p-n 다이오드를 제작하기 위하여 ZnO와 격자상수가 비슷한 GaN, NiO, CoO와 같은 물질들이 나노구조 접합에 많이 쓰이고 있지만, 격자상수 차이로 인해서 접합부분 캐리어 수송효율이 떨어지는 단점을 가지고 있다. n-type과 p-type ZnO를 만들어 동종 접합을 만들 경우 이러한 문제점을 극복할 수 있지만, 도핑되지 않은 ZnO가 n-type을 특성을 나타내기 때문에 안정적인 p-type ZnO 합성에 대한 연구가 필수적이다. 본 연구에서는 안정적인 p-type ZnO 합성을 위해서 수열합성법을 이용하여 phosphorus (P) 도핑을 하였고, 나노와이어 diode 구조를 만들었다. P 도핑으로 인한 격자상수 변화는 x-ray diffraction (XRD)를 사용하여 확인하였고, x-ray photoelectron spectroscopy (XPS)를 통해 도핑 원소를 분석하였으며, 이때의 recification ratio, turn-on voltage 등의 전기적 특성을 평가하였다.