• Nuclear Engineering and Technology
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• 제49권4호
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• pp.752-759
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• 2017

The fatigue crack growth behavior of Type 347 (S347) and Type 347N (S347N) stainless steel was evaluated under the operating conditions of a pressurized water reactor (PWR). These two materials showed different fatigue crack growth rates (FCGRs) according to the changes in dissolved oxygen content and frequency. Under the simulated PWR conditions for normal operation, the FCGR of S347N was lower than that of S347 and insensitive to the changes in PWR water conditions. The higher yield strength and better corrosion resistance of the nitrogen-alloyed Type 347 stainless steel might be a main cause of slower FCGR and more stable properties against changes in environmental conditions.

• 한국재료학회지
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• 제1권2호
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• pp.71-76
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• 1991

The superconducting powders in $YBa_2Cu_3O_{7-x}$ and Bi-Pb-Sr-Ca-Cu-O system were easily prepared from water in oil type emulsion by loading each cation into the aqueous phase. In $YBa_2Cu_3O_{7-x}$ system, the superconducting orthorhombic phase was formed by calcining at $750^{\circ}C$ for 10h in $O_2$. The size of the superconducting phase powders was submicron. The density of the sintered specimen using this powders was about 95% of the theoretical density and the resistance sharply decreases at about 90K, In Bi-Pb-Sr-Ca-Cu-O system the low Tc phase($(Bi, Pb)_2Sr_2Ca_1Cu_2O_y$) was formed by calcining at $800^{\circ}C$ for 10h in a low oxygen partial pressure of 1/20 atm The shape of clacined powder is thin plate of which size is about $2\mu\textrm{m}$ and thickness is smaller than $\mu\textrm{m}$. It was observed that the high Tc phase ($(Bi, Pb)_2Sr_2Ca_2Cu_3O_y$) was formed by sintering at $850^{\circ}C$ for 30h in oxygen pressure of 1/20 atm without intermediary grinding. The above sintered sample exhibited superconductivity with a Tc(zero)=105K.

• Transactions on Electrical and Electronic Materials
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• 제1권2호
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• pp.23-27
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• 2000

Indium in oxide(ITO) films have been deposited on PET and glass substrates by DC reactive magnetron sputtering without post-deposition thermal treatment, The high quality for microstructure, electrical and optical properties of the as-deposited ITO films on unheated substrates is dominated by the sputtering parameters, The influence of the working gas pressure, DC power and oxygen partial pressure has been systematically investigated, The lowest DC power, and oxygen partial pressure has been systematically investigated, The lowest resistivity of ITO films deposited on PET substrates was 6$\times$10$^{-4}$ $\Omega$cm. It has been obtained at a working pressure of 3 mTorr and DC power of 30 W. The sheet resistance and optical transmittance of these film were 22 $\Omega$/square and 84% respectively. The best values of figures of merit for the electrical and optical characteristics such as T/ $R_{sh}$ and $T^{10}$ / $R_{sh}$ are approximately 38.1 and 7.95($\times$10$^{-3}$ $\Omega$$^{-1}$ ), respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.195-196
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• 2005

In recent years, as the needs of MOS's a high quality is desired to get the superior electrical characteristics and reliability on MOSFET. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over MOSFET, 2'nd silicidation formation process has been proposed as a dielectric growth/annealing process. In this study the author observed process characteristics on MOS structure. In view points of the process characteristics of MOS capacitor, the oxygen & polysilicon was analyzed by SIMS analysis on l'st & 2'nd Ti process, the oxygen and Si2 contents[Count/sec] of 1.5e3 & 3.75e4 on l'st process and l.1e3 & 2.94e4 on 2'nd process, the Ti contents' of 8.2e18 & 6.5e18 on 1'st and 2'nd process. The sheet resistance[$\Omega/sq.$] was 4.5 & 4.0, the film stress[dyne/cm 2] of 1.09e10 & 1.075e10 on l'st and 2'nd process. I could achieved the superior MOS characteristics by 2'nd silicidation process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.36-37
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• 2006

Titanium oxy-nitride ($TiN_O_y$) thin films were deposited on $SiO_2$/Si substrates using reactive dc magnetron sputtering, and were then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature on the structural and electrical properties of the films was investigated. The grain size of the films decreases with increasing annealing temperature. On the other hand, crystallinity of the films is independent of annealing temperature in air ambient. Resistivity of the films increases remarkably as an annealing temperature increases and temperature coefficience of resistance (TCR) of the films varies from a positive value to a negative value. The films annealed at $350^{\circ}C$ for 30 min exhibited a near-zero TCR value of approximately -5 ppm/K. The decrease of the grain size with increasing annealing temperature was attributed to an increase of oxygen concentration incorporated into the films during anncaling treatment.

• 대한금속재료학회지
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• 제50권7호
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• pp.545-548
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• 2012

The optical and electronic properties of Indium Tin Oxide (ITO) thin films deposited on a RF-plasma treated glass substrate were investigated by X-Ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS), Reflected Electron Energy Loss Spectroscopy (REELS). The modification of glass substrates was carried out by varying the time of the plasma surface treatment in an oxygen atmosphere. The focus of this research was to examine how the optical and electronic properties of ITO thin films change with the plasma treatment time. The surface energy increased since the carbon bonds were removed from the surface after the glass substrate received the surface treatment. The ITO thin films produced on the glass substrate with surface treatment showed that the high optical transmittance was approximately 85%. The measured band gap energy was as high as 3.23 eV when the plasma treatment time was 60 s and the work function after the treatment was increased by 0.5 eV in comparison to that before the treatment of 60 s. The ITO thin film exhibited an excellent sheet resistance of $2.79{\Omega}/{\Box}$. We found that the optical and electronic properties of ITO thin films can be improved by RF-plasma surface treatment.

• Korean Chemical Engineering Research
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• 제57권2호
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• pp.259-266
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• 2019

Tuning of electro-optical properties of nano-structured $SnO_2:Ga$ powders in a micro drop fluidized reactor (MDFR) was highly effective to enhance the activities of powders to be used as sensor materials. The tuning was conducted continuously in a facile one-step process during the formation of powders. The microscopic hydrodynamic forces affected the band gap structure and charge transfer of $SnO_2:Ga$ powders through the oxygen and interfacial tin vacancies by providing plausible pyro-hydraulic conditions, which resulted in the decrease in the electrical resistance of the materials. The analyses of room-temperature photoluminescence (PL) spectra and FT-IR exhibited that the tuning could improve the surface activities of $SnO_2:Ga$ powders by adjusting the excitation as well as separation of electrons and holes, thus maximizing the oxygen vacancies at the surface of the powders. The scheme of photocatalytic mechanism of $SnO_2:Ga$ powders was also discussed.

• 한국재료학회지
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• 제29권1호
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• pp.52-58
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• 2019

The microstructure, hardness, and wear behaviors of a High Velocity Oxygen Fuel(HVOF) sprayed WC-CoFe coating are comparatively investigated before and after laser heat treatments of the coating surface. During the spraying, the binder metal is melted and a small portion of WC is decomposed to $W_2C$. A porous coating is formed by evolution of carbon oxide gases formed by the reaction of the free carbon and the sprayed oxygen gas. The laser heat treatment eliminates the porosity and provides a more densified microstructure. After laser heat treatment, the porosity in the coating layer decreases from 1.7 % to 1.2 and the coating thickness decreases from $150{\mu}m$ to $100{\mu}m$. The surface hardness increases from 1440 Hv to 1117 Hv. In the wear test, the friction coefficient of coating decreases from 0.45 to 0.32 and the wear resistance is improved by the laser heat treatment. The improvement is likely due to the formation of oxide tribofilms.

• 한국염색가공학회지
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• 제33권1호
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• pp.40-47
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• 2021

As modern society develops, it becomes very complex and diverse, and interests in the convenience of life and the natural environment are gradually increasing. Products used in our daily life are also changing according to the needs of consumers, and food packaging is one of them. In particular, retort packaging materials have been used for the purpose of long-term preservation of contents, but the appearance of products suitable for recent environmental issues has been somewhat delayed. Therefore, in order to develop eco-friendly and human-friendly products by replacing the metals used in the existing retort packaging materials, the possibility of substitution was examined using cellulose nanofibers, a natural material. As a result, it can be seen that all functions can be replaced according to the existing long-term storage characteristics for retort packaging films. In particular, not only oxygen permeability and water vapor permeability, which are one of the most important factors, but also heat resistance, which is heating durability, is evaluated as applicable to commercialization compared to products using metals currently in use.

• 마이크로전자및패키징학회지
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• 제29권2호
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• pp.53-58
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• 2022

One of the most promising emerging technologies for the next generation of nonvolatile memory devices based on resistive switching (RS) is the resistive random-access memory mechanism. To date, RS effects have been found in many transition metal oxides. However, no clear evidence has been reported that ZnO-based resistive transition mechanisms could be associated with strong correlation effects. Here, we investigated N, F-co-doped ZnO (NFZO), which shows bipolar RS. Conducting micro spectroscopic studies on exposed surfaces helps tracking the behavioral change in systematic electronic structural changes during low and high resistance condition of the material. The significant difference in electronic conductivity was observed to attribute to the field-induced oxygen vacancy that causes the metal-insulator Mott transition on the surface. In this study, we showed the strong correlation effects that can be explored and incorporated in the field of multifunctional oxide electrons devices.