• Bulletin of the Korean Chemical Society
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• 제23권3호
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• pp.369-373
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• 2002

The liquid phase oxidation of p-xylene has been carried out with oxygen-enriched gas, and the manganese component was precipitated probably via over-oxidation to $Mn^{4+}$. The precipitation increased with rising oxygen concentration in the reaction gas and occurred mainly in the later part of the oxidation. The activity of the reaction decreased, and the blackening of the product and side reactions to carbon dioxide increased with the degree of precipitation. Precipitation can be decreased with the addition of metal ions, such as cerium, chromium and iron.

• 한국결정성장학회지
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• 제9권1호
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• pp.84-88
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• 1999

결정성장 조건을 달리하여 공공관련 결함들의 발생영역의 크기가 다르게 형성되도록 성장한 실리콘 결정에서 반경 방향의 산소석출 거동을 고찰하였다. 반경 방향의 산소석출 거동은 결정성장 조건에 따른 공공 영역의 크기에 의존적이다. 반경 방향의 산소석출 거동은 공공우세 영역이 격자간원자 우세영역보다 산소석출이 증가한다. 또한 공공우세 영역과 격자간원자 우세영역 가장자리에서는 비정상적으로 산소석출이 크게 증가한다. 이 두 영역 경계에서는 산소석출이 거의 일어나지 않는다.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.705-710
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• 1998

Intrinsic gettering is usually to improve wafer quality, which is an important factor for reliable ULSI devices. In order to generate oxygen precipitation in lightly and heavily boron doped silicon wafers with or without high $^75 As^+$ ion implantation, the 2-step annealing method was adopted. After annealing, the were cleaved and etched with th Wright etchant. The morphology of cross section on samples was inspected by FESEM(field emission scanning electron microscopy). The morphology of unimplanted samples was rater rough than that of the implanted. Oxygen precipitation density observed by an optical microscope in lightly boron doped samples was about 3$\times10^6/cm^3$. However, in heavily boron doped samples, the density of oxygen precipitation was largest at $600^{\circ}C$ in 1st annealing, and decreased abruptly until $800^{\circ}C$, But it increased slightly at $1000^{\circ}C$ and was independent with the implantation.

• 한국재료학회지
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• 제14권1호
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• pp.9-12
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• 2004

Metallic impurities, such as Fe, Cu, and Au, become generation and recombination centers for minority carriers when combined with oxide precipitates or silicon self-interstitial clusters. As these centers may cause leakage and discharge in silicon devices, their prevention through gettering of the metallic impurities is an important issue. In this article, key aspects of intrinsic gettering, such as oxygen control, wafer cleaning, device area denudation, and bulk oxygen precipitation are discussed, and a practical method of implementing intrinsic gettering is outlined.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 2003년도 총회 및 춘계학술발표회
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• pp.63-66
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• 2003

This study applied a hydrogeological field survey and isotope investigation to identify source locations and delineate pathways of groundwater contamination by nitrogen compounds. The infiltration and recharge processes were analyzed with groundwater-level fluctuation data and oxygen-hydrogen stable isotope data. The groundwater flow pattern was investigated through groundwater flow modeling and spatial and temporal variation of oxygen isotope data. Based on the flow analysis and nitrogen isotope data, source types of nitrate contamination in groundwater are identified. Groundwater recharge largely occurs in spring and summer due to precipitation or irrigation water in rice fields. Based on oxygen isotope data and cross-correlation between precipitation and groundwater level changes, groundwater recharge was found to be mainly caused by irrigation in spring and by precipitation at other times. The groundwater flow velocity calculated by a time series of spatial correlations, 231 m/yr, is in good accordance with the linear velocity estimated from hydrogeologic data. Nitrate contamination sources are natural and fertilized soils as non-point sources, and septic and animal wastes as point sources. Seasonal loading and spatial distribution of nitrate sources are estimated by using oxygen and nitrogen isotopic data.

• 한국결정성장학회지
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• 제24권6호
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• pp.246-251
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• 2014

최근 태양전지의 효율을 증가시키기 위한 연구가 많이 이루어지고 있으며, 특히 단결정 실리콘 웨이퍼의 경우 높은 효율을 낼 수 있는 소재로써 고효율 태양전지연구에 많이 이용되고 있다. 본 연구에서는 단결정으로 Czochralski(Cz)-Si 성장 시 산소농도를 다르게 하여 산소석출결함의 변화와 그에 따른 셀효율과의 관계를 비교하였다. 산소불순물은 Cz법으로 성장시킨 실리콘의 주된 불순물이다. 산소불순물 존재 시 태양전지 공정에서 산소석출결함이 생성되며 발생된 산소석출결함은 셀효율에 악영향을 미치게 된다. 그러므로 고효율 태양전지를 위한 웨이퍼를 생산하기 위한 산소석출결함 밀도와 셀효율의 상관성을 연구하였다. 또한 산소농도에 따른 산소석출결함을 분석하여 산소석출결함이 발생되지 않는 잉곳 내 산소농도 범위를 연구하여 14.5 ppma 이하에서 Bulk Micro Defect(BMD)가 발생하지 않음을 확인하였다.

• 한국재료학회지
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• 제2권2호
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• pp.119-125
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• 1992

수평자장을 건 Czochralski(HMCZ) 방법으로 자장강도(B)와 도가니 회전속도(C)가 실리콘 단결정의 산소편석에 미치는 영향에 대하여 연구하였다. B=2, 3, 4kG와 C=4-15rpm에서 <100> 방향으로 성장시킨 57mm 직경의 단결정들 내의 산소분포는 대체로 축을 따라서 불균일하였고 톱니모양을 나타내었다. 종래의 CZ 방법과 비교할 때, 이러한 산소분포의 불균일성은 위 강도의 수평자장이 결정성장계면으로의 산소전달에 불안정한 요소로 작용했음을 나타낸다고 볼 수 있다. 반면에 C의 증가는 산소분포의 불균일성의 약화와 산소농도의 전반적인 증가를 유도하였다. 이 결과를 토대로 B=2kG에서 27-36ppma인 산소분포를 가진 단결정이 프로그램된 C에 의해서 얻어졌다. 소자제조공정을 모의한 열처리 과정에서 HMCZ 실리콘의 산소석출은 종래의 CZ 실리콘의 산소석출에 비해서 상대적으로 불균일하였고, as-grown 상태에서의 고르지 못한 HMCZ 실리콘의 산소분포가 주요 원인임이 밝혀졌다.

• 한국결정성장학회지
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• 제18권4호
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• pp.137-139
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• 2008

Floating zone, neutron transmutation-doped and magnetic Czochralski silicon crystals are being widely used for fabrication power devices. To improve the quality of these devices and to decrease their production cost, it is necessary to use large-diameter wafers with high and uniform resistivity. Recent developments in the crystal growth technology of Czochralski silicon have enable to produce Czochralski silicon wafers with sufficient resistivity and with well-controlled, suitable concentration of oxygen. In addition, using Czoehralski silicon for substrate materials may offer economical benefits, First, Czoehralski silicon wafers might be cheaper than standard floating zone silicon wafers, Second, Czoehralski wafers are available up to diameter of 300 mm. Thus, very large area devices could be manufactured, which would entail significant saving in the costs, In this work, the conventional Czochralski silicon crystals were grown with higher oxygen concentrations using high pure polysilicon crystals. The silicon wafers were annealed by several steps in order to obtain saturated oxygen precipitation. In those wafers high resistivity over $5,000{\Omega}$ cm is kept even after thermal donor formation annealing.

• 한국환경과학회지
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• 제21권9호
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• pp.1115-1129
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• 2012

The objective of this study was to analyze long-term annual and seasonal trends of water chemistry on landuse patterns and seasonal precipitation using 72 sampling sites within Namhan River watershed during 2001-2010. Water quality, based on multi-parameters of water temperature(WT), dissolved oxygen(DO), biochemical oxygen demand(BOD), chemical oxygen demand(COD), suspended solids(SS), total nitrogen(TN), total phosphorus(TP), and electric conductivity(EC) varied largely depending on monsoon rain and landuse patterns such as forest, cropland, and residence. Concentrations of BOD and COD as an indicator for organic matter pollution, increased during summer monsoon season at the cropland and residential streams. Values of TN and TP were higher in residential streams than in the forest and cropland streams. In the meantime, DO values had weak relations to the landuse patterns of forest and cropland cover. Water quality was worst in cropland and residential streams, and also most degradated in 4th order streams. Overall, our results suggest that efficient water quality management is required in the cropland and residential landuse streams.

• 한국결정학회지
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• 제15권1호
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• pp.44-50
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• 2004

Spinel structured lithium managanese oxide $(LiMn_2O_4)$ powder with well defined facetted morphology was prepared by precipitation-evaporation method. {111}, {110}, and {100} planes are mainly observed in the $LiMn_2O_4$ powder. And powder shape of tetradecahedron and octahedron was observed depending on the calcinations temperature. The observed powder morphology observed seemed to be related to the nonstoichiometry of the oxygen in the $LiMn_2O_4$ spinel structure. Oxygen nonstoichiometry might be responsible for the Jahn-teller effect and structure transition which in turn affects the surface energy of the {111}, {110}, and {100} planes. Powder shape transition from tetradecahedron to octahedron seemed to be related to the surface energy of the {111}, {110}, and {100} planes with oxygen nonstoichiometry.