• Progress in Superconductivity and Cryogenics
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• v.9 no.2
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• pp.23-26
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• 2007

The influence of water partial pressure in Metal-organic Deposition (MOD) method was investigated on the texture and the morphology of $YBa_2Cu_3O_{7-x}$ (YBCO) films grown on the buffered metal tapes. The water partial pressure was varied from 4.2% up to 10.0% with the other process variables, such as annealing temperature and oxygen partial pressure, kept constant. In this work, the fluorine-free Y & Cu precursor solution added with Sm was synthesized and coated by the continuous slot-die coating & calcination step. The next annealing step of the YBCO films was done by the reel-to-reel method with the gas flowed vertically down. From the x-ray diffraction analysis, the un-reacted phase like $BaF_2$ peak was found at the water partial pressure of 4.2%, but $BaF_2$ peak intensity is much reduced as the water partial pressure is increased. However, the higher water partial pressure of about 10% in this experiment leads to the poor crystallinity of YBCO films. The morphologies of the YBCO films were not different from each other when the water partial pressure was varied in this work. The maximum critical current density of 3.8MA/$cm^2$ was obtained at the water partial pressure of 6.2% with the annealing temperature of 780$^{\circ}C$ and oxygen partial pressure of 500ppm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.252-255
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• 2014

Indium tin oxide (ITO) films with various oxygen partial pressure from 0 to $6{\times}10^{-5}$ Pa were prepared onto polyethylene terephthalate (PET) using RF magnetron sputtering at room temperature. The structural, electrical and optical properties of the grown ITO films were investigated as a function of the oxygen partial pressure. The amorphous nature of the ITO films was dominant at the partial pressure below $1{\times}10^{-5}$ Pa and the degree of crystallinity increased as the oxygen concentration increased further. This structural change comes with the increased carrier concentration and reduction of the electrical resistivity down to $9.8{\times}10^{-4}{\Omega}{\cdot}cm$. The average transmittance (at 400~800 nm) of the ITO deposited on the PET substrates increased as the oxygen partial pressure increased and transmittance above 80 % was achieved with the partial pressure of $4{\times}10^{-5}$ Pa. The results show that the choice of optimal oxygen partial pressure can present improved film crystallinity, the increased carrier concentration, and the enhancement in the electrical conductivity.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.57.1-57.1
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• 2010

ITO(Indium Tin Oxide)는 전도도와 투과도 특성이 뛰어나 디스플레이, 태양전지, LED 등 여러 산업에서 전극 물질로 널리 사용 되어져 왔다. 최근 ITO의 사용이 급격히 증가하면서 이에 대한 연구가 활발히 진행되고 있다. ITO는 막의 특성을 좋게 하기 위하여 증착 시 Ar gas와 함께 $O_2$가스를 첨가하기도 한다. 본 연구에서는 산소 분압에 따른 ITO 박막의 전기적, 광학적 특성에 대하여 연구하였다. Corning사의 eagle 2000 glass 기판위에 스퍼터링을 이용하여 ITO layer를 증측하였고, 증착시, $O_2$ partial pressure를 0 - 0.5%까지 0.1% 간격으로 가변하였다. 증착된 샘플은 Sinton사의 UV-vis 장비를 이용하여 광학적 특성을 측정하였고, Hall measurement 장비를 이용하여 전기적 특성을 측정하였다. ITO 박막은 $O_2$의 partial pressure가 증가할수록 향상된 전기적, 광학적 특성을 나타내었다.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1523-1525
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• 1999

ZnO is a wide-bandgap II-VI semiconductor and has a variety of potential application. ZnO exhibits good piezoelectric, photoelectric and optic properties, and is good for a electroluminescence device. ZnO films have been deposited at (0001) shappire by PLD technique. Chamber was evacuated by turbomolecular pump to a base pressure of $1{\times}10^{-6}$ Torr Nd:YAG pulsed laser was operated at ${\lambda}=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C$ to $700^{\circ}C$. At aleady works, UV emission and green-yellow PL was observed. In this work, ZnO films showed UV, violet, green and yellow emissions. UV emission was enhanced by increasing partial oxygen pressure. We investigated relationship between partial oxygen pressure and UV emission.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.333-339
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• 1999

$RuO_2$ thin films were prepared with various deposition conditions by rf magnetron sputtering. The films were annealed in vacuum, air, and air-vacuum, after that, the structural and electrical properties of the films were investigated. As the substrate temperature increases, the preferred orientation of the films changes from (101) to (200), and the grain size increases; especially, at $500^{\circ}C$, the size considerably increases. The preferred orientation of the films changes from (200) to (101) and the roughness of surface increase with the increase in oxygen partial pressure. The lowest value of resistivity of $RuO_2$ we prepared is $1.5\times 10^{-5}\Omega\codt\textrm{cm}$ at the conditions of $400^{\circ}C$ and 10% of oxygen partial pressure. After the processes of annealing, the films deposited at $400^{\circ}C$ and a oxygen partial pressure of 10% were relatively stable. The films deposited at $500^{\circ}C$ have denser structure and smoother surface when the films are annealed in vacuum after annealing in air.

• Nuclear Engineering and Technology
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• v.52 no.8
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• pp.1638-1649
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• 2020

In the case of a severe accident in a Light Water Reactor, the issue of late release of fission products, from the primary circuit surfaces is of particular concern due to the direct impact on the source term. CsI is the main iodine compound present in the primary circuit and can be deposited as particles or condensed species. Its chemistry can be affected by the presence of molybdenum, and can lead to the formation of gaseous iodine. The present work studied chemical reactions on the surfaces involving gaseous iodine release. CsI and MoO₃ were used to highlight the effects of carrier gas composition and oxygen partial pressure on the reactions. The results revealed a noticeable effect of the presence of molybdenum on the formation of gaseous iodine, mainly identified as molecular iodine. In addition, the oxygen partial pressure prevailing in the studied conditions was an influential parameter in the reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.58-61
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• 2003

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) substrate have been deposited by a dc reactive magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by the ratio of oxygen partial pressure. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows: operating pressure of 5 mTorr,target-substrate distance of 45 mm, dc power of 20-30 W, and oxygen gas ratio of 10 %. The optical transmittance is above 80 % at 550 nm, and the sheet resistance and resistivity of films are $24\;{\Omega}$/square and $1.5{\times}10^{-3}\;cm$, respectively.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.33-36
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• 1994

The x values of nonstoichiometric chemical formula, $Tb_4O_{7-{\delta}}\;or\;TbO_{1.5+x}$, have been determined in temperature range from 600$^{\circ}$C to 1000$^{\circ}$C under oxygen partial pressure of 2 ${\times}$ 10$^{-1}$ to 1 ${\times}$ 10$^{-5}$ atm by using quartz microbalance. The x values varied from 0.0478 to 0.1964 in the above conditions. The enthalpy of formation for x' in TbO$_{1.5+(0.25-xo-x')}$, ${\delta}H_f$, was 4.93-3.40 kcal mol$^{-1}$ and the oxygen partial pressure dependence was -1/8.80∼-1/11.8 under these conditions. The electrical conductivity of the $TbO_{1.5+x}$ was measured under the same conditions and the values varied from about 10$^{-3}$ to 10$^{-6}\;{\Omega}^{-1}cm^{-1}$ within semiconductor range. The activation energies for the conduction increase with oxygen partial pressure from 0.83 to 0.89 eV under the above conditions. The l/n values obtained from the oxygen pressure dependence of the conductivity are 1/4.4-1/5.2. The conduction mechanism, defect structure, and other physical properties of the oxides are dicussed with the x values, the electrical conductivity values, and the thermodynamic data.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.68-71
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• 1998

The effect of Mn and Nb additions on the electrical properties of BaTiO$_3$ has been studied by means of equilibrium electrical conductivity as a function of temperature, oxygen partial pressure(Po$_2$) and composition. If the manganese ion is added to the normal Ti site, i.e. BaTi$_{1-x}Mn_xO_{\delta-6}$, the equilibrium conductivity shows strong evidence of acceptor-doped behavior. The conductivity minimum, corresponding to the transition from oxygen excess, p-type behavior to oxygen deficient, n-type behavior with decreasing Po$_2$, is displaced to lower Po$_2$ and is broadened and flattened. The partial replacement of Mn ion with Nb decreases the acceptor-doped effect and the total replacement exhibits a typical donor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped samples, for the p-type region, the electrical conductivity follows the 1/6th power dependence of oxygen partial pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.451-454
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• 2001

The ionic conductivity of cubic solid solutions in the system $Y_{2}O_{3}-ZrO_{2}$ prepared by SHS was examined. Conductivity-temperature data obtained at $1000^{\circ}C$ in atmosphere of low oxygen partial pressure ($10^{-40}$ atm) for $Y_{2}O_{3}-ZrO_{2}$ cubic solid solutions indicated that these materials could be reduced, the degree of reduction being related to the measuring electric field. At low impressed fields no reduction was observed. Thus, these conductivity data give a transference number for the oxygen ion in $Y_{2}O_{3}-ZrO_{2}$ cubic solid solutions greater than 0.99.