• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.263-266
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• 2003

The fine $YBa_2Cu_3O_x$ powder ($0.2{\sim}1.0\;{\mu}m$) is produced by sol-gel method, and electrophoresis deposition is used for the preparation of $YBa_2Cu_3O_x$ thick films which are deposited on Ag wire. The oriented $YBa_2Cu_3O_x$ was tried to be prepared by the zone-melting method under low oxygen partial pressure. The orientation and the phase composition were examined by the X-ray diffraction and the superconductivities were measured by 4 line method. The critical current densities are still quite low, which may be due to unsuitable technical parameters for zone-melting of $YBa_2Cu_3O_x$ thick films. Therefore the heat treatment condition and controlling of low oxygen partial pressure should be improved in the future experiment.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.775-782
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• 2003

In the study, the total conductivies in [(Ce $O_2$)$_{1-x}$ (Zr $O_2$)$_{x}$]$_{0.8}$(Sm $O_{1.5}$)$_{0.2}$ (x- 0, 0.05, 0.1, 0.2) solid solution were measured as a function of temperature and oxygen partial pressure between 80$0^{\circ}C$ and 1,00$0^{\circ}C$ using 4-probe d.c method. Under pure oxygen atmospere, the oxygen ionic conductivity of [(Ce $O_2$)$_{1-x}$ (Zr $O_2$)$_{x}$]$_{0.8}$(Sm $O_{1.5}$)$_{0.2}$ decreased with the concentration of Zr $O_2$At high oxygen partial pressure, the electrical conductivity is almost independent of oxygen partial pressure and decreased with the increase in Zr content. However, the electrical conductivity increase with decreasing oxygen partial pressure and is almost independent of Zr content at low oxygen partial pressure. Empirically, Total conductivity( $\sigma$ ) was expressed by the p$o_{2}$ -independent conductivity as $\sigma$$_{i}$, and the $p_{-1/4}$ $o_{2}$sup -dependent part as $\sigma$$_{e}$. Total, ionic and electronic conductivities fitted by data enabled to determine the transference number. The ionic transference number( $t_{i}$ ) decreased while the electronic transference( $t_{e}$ ) increase with the increase in Zr content and p$o_{2}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.191-191
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• 2009

$Bi_4Ti_3O_{12}$ (BiT) thin films were well developed on the Pt/Ti/$SiO_2/Si$ substrate by a metal organic decomposition (MOD) method. Oxygen was effective on the crystallization of the BiT thin films during a rapid thermal annealing process. The electrical properties of the BiT films dependant on the oxygen partial pressure were investigated. No crystalline phase was observed for the BiT film annealed at $700^{\circ}C$ under oxygen free atmosphere. However, its crystallinity was significantly evolutionned with increasing oxygen partial pressure. In addition, its dielectric and piezoelectric properties were enhanced with increasing oxygen partial pressure to 10 torr. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current and piezoelectric constant ($d_{33}$) was also considerably improved, being as 0.62 nA/$cm^2$ at 1 V and approximately 51 pm/V, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.88-89
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• 2007

ZnO thin films were deposited on $Al_2O_3$ (alumina) substrates by pulsed laser deposition (PLD) using Nd:YAG laser with a wavelength of 355nm, at room temperature and oxygen partial pressure of 1, 10, 30, 50, 100, and 200m Torr. Furthermore, deposited ZnO thin films were post-annealed at 400, 550, $600^{\circ}C$. The effects of oxygen partial pressure and post-annealing temperature on structural properties of the deposited films have been investigated by means of X-ray diffraction (XRD), and atomic force microscope (AFM), respectively. It has been found that ZnO thin films exhibit c-axis orientation, exhibiting an increased foil width at half maximum (FWHM) value of (002) diffraction peak at 30m Torr oxygen partial pressure and higher post-annealing temperature ($700^{\circ}C$).

• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.400-405
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• 1995

ZnO films have been grown easily with the conventional thermal evaporation method on SiO$\_$2/ coated Si wafers. Anhydrous zinc acetate has been used as evaporation source. Zinc-acetate was directly heated in the laboratory-made brass boat. Zinc-acetate was sublimed at the boat temperature of about 220.deg. C. The substrates were heated to 600.deg. C with home made tantalium heater. Oxygen has been flowed into the deposition chamber to change the partial pressure of oxygen. X-ray diffraction patterns showed all the films to be amorphous. The films deposited at high oxygen pressure exhibit higher resistivity than films at low pressure. Energy dispersive spectroscopy(EDS) and rutherford backscattering spectrometry(RBS) were conducted on the films to reveal the composition of the ZnO films.

• The Korean Journal of Ceramics
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• 제5권3호
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• pp.288-295
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• 1999

Partial conductivities contributed by electron holes, oxygen ions, and protons were caluclated in $SrZr_{0.95}Y_{0.05}O_{2.975}$, using the reported formulae derived from the defect chemistry of HTPCs. Required parameters were obtained from the graphical analysis of total conductivity variation against partial pressure of water vapor and oxygen. Predicted overall conductivities showed a reasonable agreement with experimental measurements. The conductivity of the material showed a linear increase with square root of the water vapor pressure. This increase was due to proton conduction in an almost pure ionic conductivity. The calculation of partial conductivities at $800^{\circ}C$ resulted in an almost pure ionic conductivity at $P_{02}=10^{-10}$ atm and a predominant hole conductivity at $P_{02}=10^{-10}$ atm. Pure proton conduction was not expected at this temperature, contrary to the earlier reports. Discussions were made in relation with reported thermodynamic data and defect structure of the material. It was shown that from the total conductivity dependence on water vapor pressure, the pure ionic conductivity at low oxygen partial pressures could be separated into protonic and oxygen ionic conductivity in $ZrO_2$-based HTPCs.

• 한국세라믹학회지
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• 제41권5호
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• pp.364-369
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• 2004

The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.

• Bulletin of the Korean Chemical Society
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• 제20권9호
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• pp.1031-1034
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• 1999

Tin oxide films have been grown employing the chemical vapor deposition technique under reduced pressure conditions using tetramethyltin as the precursor and oxygen as the oxidant. An activation energy derived for the deposition reaction under representative deposition conditions has a value of 89±3 kJ mol-1, suggesting a typical kinetic control. Deposition rates of tin oxide films exhibit a near first order dependence on tetramethyltin partial pressure and a zeroth order dependence on oxygen partial pressure. This study provides the first quantitative information about the growth kinetics of tin oxide films from tetramethyltin by the cold-wall low-pressure chemical vapor deposition.

• Bulletin of the Korean Chemical Society
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• 제29권2호
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• pp.427-430
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• 2008

BaTiO3 and SrTiO3 thin films were fabricated on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition process. The dependence of the deposited film quality upon the partial oxygen pressure during the deposition process was importantly examined. Regardless of the oxygen pressure, the as-deposited films were not fully crystallized. However, the film deposited at low oxygen pressure became well crystallized after the annealing process. It was concluded, therefore, that the partial oxygen pressure is reduced as low as possible during the deposition process and then anneal the as-deposited samples at ambient pressure to fabricate the well crystallized SrTiO3 and BaTiO3 films by laser ablation.

• 대한기계학회논문집B
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• 제37권10호
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• pp.879-886
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• 2013

본 연구에서는 고농도 EGR을 사용하는 DME 예혼합압축자기착화 연소의 근본적인 연소메커니즘을 이해하기 위해 수치해석 시뮬레이션을 수행하였다. EGR과 과급의 영향을 조사하면서 동시에 산소 분압과 산소 농도중 어느 것이 LTR 발열비율을 결정하는 핵심요소인지 확인하였다. EGR 비율과 과급압력을 매개변수 정하기 위해서 1) EGR 비율변화에 따라 산소농도, 산소함유량을 변화시키는 조건 2) 산소농도를 거의 일정하게 유지하면서 과급을 하여 산소 분압을 변화시키는 조건, 3) EGR과 과급을 조합하면서 산소 분압을 일정하게 유지 하기 위해 산소농도를 변화시키는 조건 세가지 조건에서 화학반응수치계산을 수행하여 검증했다. 연구결과 EGR율이 증가하면 연소의 시작, 종료시기가 지연되고, 과급을 하게 되면 연소의 시작, 종료시기가 앞당겨지는 것을 확인했다. EGR과 과급이 LTHR 발열비율 증가에 영향을 미치는 것도 확인하였다.