• 한국정보통신학회논문지
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• 제10권3호
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• pp.473-478
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• 2006

DC 마그네트론 스퍼터링 방법으로 ITO 박막을 형성하였다. 박막 형성 시 스퍼터 전압을 변화시켜 음이온에 의한 손상을 최소화하였으며, 또한 기판온도와 산소유입량을 변화시켜 비저항 $1.6\times10^{-4}{\Omega}cm$, 광투과도 90% 이상의 값을 갖는 양질의 박막을 형성 할 수 있었다. 박막 형성 시 $O_2$ 가스의 유량이 4sccm 이상으로 산소공급이 과다할 경우는 ITO 박막의 비저항이 증가하고, 광 투과도가 포화됨을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.160-160
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• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.

• Biomolecules & Therapeutics
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• 제21권6호
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• pp.470-475
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• 2013

Ultraviolet (UV) radiation is a major environmental factor that leads to acute and chronic reactions in the human skin. UV exposure induces wrinkle formation, DNA damage, and generation of reactive oxygen species (ROS). Most mechanistic studies of skin physiology and pharmacology related with UV-irradiated skin have focused on proteins and their related gene expression or single-targeted small molecules. The present study identified and analyzed the alteration of skin metabolites following UVB irradiation and topical retinyl palmitate (RP, 5%) treatment in hairless mice using direct analysis in real time (DART) time-of-flight mass spectrometry (TOF-MS) with multivariate analysis. Under the negative ion mode, the DART ion source successfully ionized various fatty acids including palmitoleic and linolenic acid. From DART-TOF-MS fingerprints measured in positive mode, the prominent dehydrated ion peak (m/z: 369, M+H-$H_2O$) of cholesterol was characterized in all three groups. In positive mode, the discrimination among three groups was much clearer than that in negative mode by using multivariate analysis of orthogonal partial-least squares-discriminant analysis (OPLS-DA). DART-TOF-MS can ionize various small organic molecules in living tissues and is an efficient alternative analytical tool for acquiring full chemical fingerprints from living tissues without requiring sample preparation. DART-MS measurement of skin tissue with multivariate analysis proved to be a powerful method to discriminate between experimental groups and to find biomarkers for various experiment models in skin dermatological research.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 청정기술
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• 제27권2호
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• pp.174-181
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• 2021

본 연구에서는 경상남도 지역의 오염감시전용측정망의 5년간(2013 ~ 2017) 자료를 이용하여 주오염원과 분기별 지하수 수질특성을 분석하였다. 주오염원은 산업단지지역, 광산·폐광산지역 및 하수처리시설로 구별하였다. 분석 항목은 현장측정 항목(수온, pH, 전기전도도, 용존산소, 산화물환원전위), 양이온 그리고 음이온이었다. 수온과 pH는 주오염원에 따라 크게 변하지 않았다. 양이온과 음이온의 평균농도의 합은 산업단지지역에서 가장 높았고, 하수처리시설 그리고 광산·폐광산지역 순이었다. 산업단지지역에서는 전기전도도의 값이 가장 높았고, 용존산소의 값이 가장 낮았다. 산업단지지역은 나트륨이온이 가장 높은 구성비를 보인 반면 하수처리시설과 광산·폐광산지역에서는 칼슘이온이 가장 높은 값을 나타내었다. 모든 주오염원에서 중탄산염의 농도가 가장 높게 나타났다. 수온, pH 그리고 양이온과 음이온의 농도는 분기마다 크게 다르지 않았다. 수질유형 중 Na-HCO₃ 유형이 가장 높은 비율을 차지하였으나, 외부 오염의 가능성이 높은 Na-Cl 유형도 오염감시전용측정망의 전체 자료 중 약 20%를 차지하였다.

• Bulletin of the Korean Chemical Society
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• 제31권3호
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• pp.689-693
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• 2010

Second-order rate constants ($k_{CN^-}$) have been measured for nucleophilic substitution reactions of Y-substituted phenyl benzoates (1a-r) with $CN^-$ ion in 80 mol % $H_2O$/20 mol % DMSO at $25.0{\pm}0.1^{\circ}C$. The Br${\o}$nsted-type plot is linear with ${\beta}_{1g}$ = -0.49, a typical ${\beta}_{1g}$ value for reactions reported to proceed through a concerted mechanism. Hammett plots correlated with ${\sigma}^{\circ}$ and ${\sigma}^-$ constants exhibit many scattered points. In contrast, the Yukawa-Tsuno plot for the same reaction exhibits excellent linearity with ${\rho}_Y$ = 1.37 and r = 0.34, indicating that a negative charge develops partially on the oxygen atom of the leaving aryloxide in the rate-determining step (RDS). Although two different mechanisms are plausible (i.e., a concerted mechanism and a stepwise pathway in which expulsion of the leaving group occurs at the RDS), the reaction has been concluded to proceed through a concerted mechanism on the basis of the magnitude of ${\beta}_{1g}$ and ${\rho}_Y$ values.

• Bulletin of the Korean Chemical Society
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• 제32권6호
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• pp.1859-1864
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• 2011

Two lanthanide complexes, $[Ln(NO_3)_2(H_2O)_3(L)_2](NO_3)(H_2O)$ {Ln = Eu (1), Tb (2); L = 2-(4-pyridylium)-ethanesulfonate, $(4-pyH)^+-CH_2CH_2-SO_3^-)$}, were prepared from lanthanide nitrate and 4-pyridineethanesulfonic acid in $H_2O$ under microwave-heating conditions. Complexes 1 and 2 are isostructural, and the lanthanide metal in both complexes is coordinated to nine oxygen atoms. The pyridyl nitrogen in the ligand is protonated to give a zwitter ion that possesses an $NH^+$ (pyridyl) positive end and an $SO_3^-$ negative end. All O-H and N-H hydrogen atoms participate in hydrogen bonds to generate a two-dimensional (complex 1) or a three-dimensional network (complex 2). Complex 1 exhibits an intense red emission, whereas complex 2 exhibits an intense green emission in the solid state at room temperature.

• 대한화학회지
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• 제35권6호
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• pp.636-644
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• 1991

에너지기인 methoxy기$(-CH_2OCH_3)$, azido기$(-CH_2N_3)$ 그리고 nitrato기$(-CH_2ONO_2)$로 치환된 옥세탄(oxetane)의 단량체를 산촉매하의 중합반응에 관해서 반경험적인 MINDO/3, MNDO, AMI 방법 등을 사용하여 이론적으로 고찰하였다. 치환체 옥세탄의 친핵성 및 염기성은 옥세탄 산소원자의 음전하 크기로 설명할 수 있으며, 공중합하의 성장단계에서 옥세탄의 반응성은 옥세탄의 반응 중심 탄소의 양전하 크기와 친전자체의 낮은 LUMO 에너지에 좌우됨이 예측된다. 에너지화기 고리형 oxenium 이온형이 열린 carbenium 이온형으로 전환되는 과정은 oxonium 이온과 carbenium 이온 사이의 계산된 안정화에너지(약 10~20 kcal/mole)에 의하면 carbenium 이온이 더 유리함을 예측할 수 있다. 평형상태의 고리형 oxonium 이온과 열린 carbenium 이온의 농도크기가 반응메카니즘의 결정단계이며, 산촉매하의 형태와 계산을 기초로 하여 빠른 평형을 예상하여 볼 때 선폴리머 성장단계에서 SN1 메카니즘이 SN2 메카니즘보다 빠르게 반응할 것으로 예측된다.

• 대한화학회지
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• 제35권5호
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• pp.461-468
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• 1991

에너지기인 azido기$(-CH_2N_3)$, nitrato기$(-CH_2ONO_2)$로 치환된 옥시란의 단량체를 산촉매하의 중합반응에 관해서 반경험적인 MNDO, $AM_1$ 방법 등을 사용하여 이론적으로 고찰하였다. 치환체 옥시란의 친핵성 및 염기성은 옥시란 산소의 음전하 크기로 설명할 수 있다. 공중합하의 성장단계에서 옥시란의 반응성은 반응중심 탄소의 양전하 크기와 친전자체의 낮은 LUMO 에너지에 죄우됨을 예측된다. 환 oxonium 양이온이 개환되어 선 carbenium 양이온으로 전환 과정은 oxonium 양이온과 carbenium 양이온 사이의 계산된 안정화 에너지는 약 30∼40 kcal/mole로 carbenium 이온이 더 유리함을 예측된다. 평형상태의 옥소늄 이온과 카베늄 이온의 농도 크기가 반응 메타니즘의 결정단계이다.선폴리머 성장단계에서 $SN_1$ 메카니즘이 $SN_2$ 메카니즘보다 빠르게 반응할 것으로 예측된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.150.1-150.1
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• 2015

일부 금속들은 산화물을 형성하여 반도체적 성질을 갖게 되는데 이를 산화물 반도체라 한다. 산화물 반도체는 전자의 전도 특성에 의해 기존에 널리 사용되고 있는 a-Si 반도체 보다 뛰어난 전자 이동도를 갖고 넒은 Band gap energy를 갖기 때문에 누설 전류가 적어 Device 제작 시 저전력 구동이 가능하다는 장점이 있어 관련 연구가 활발히 진행 중이다. 산화물 박막을 증착하는 방법으로는 용액 공정, CVD, Sputtering 등이 있다. 그 중 Sputtering을 이용한 산화물 박막 증착 시 산소 음이온이 기판으로 가속하여 박막에 충돌, 박막 물성에 영향을 준다는 연구결과가 보고되고 있다. 본 연구에서는 Sputtering을 이용하여 ITO를 증착하는 과정에서 발생하는 산소 음이온을 측정하는 장치를 개발하여 산소 음이온 발생여부를 확인해 보았다.