• 제목/요약/키워드: Oxygen ion diffusion

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Determination of Oxygen Diffusion Coefficient from Vaporization Rate of MgO.$nAl_2O_3$ Spinel (MgO.$nAl_2O_3$ 스피넬에 대한 증발속도의 측정으로부터 산소의 확산계수의 결정)

  • 이홍림;배철훈
    • Journal of the Korean Ceramic Society
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    • v.20 no.2
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    • pp.129-134
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    • 1983
  • MgO.$Al_2O_3$ polycrstalline spinel powder was subjected to vaporization over the temperature range of 1150-130$0^{\circ}C$ under H2 atmosphere. Diffusion coefficient of oxygen ion through the spinel were calculated using the measure vaporization rates as follows : D=28.4 exp(-901500/RT) Reference data of the vaporization rates of MgO.$8Al_2O_3$ single crystal spinel were applied to the vaporiza-tion model proposed in this study and were calculated to give the oxygen ion diffusion coefficients over the tempera-ture 1700-195$0^{\circ}C$. The obtained diffusion coefficients are as follows: $D=3.20{\times}106$ exp(-155600/RT)

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Development of a Mass Transfer Model and Its Application to the Behavior of the Cs, Sr, Ba, and Oxygen ions in an Electrolytic Reduction Process for SF

  • Park ByungHeung;Kang Dae-Seung;Seo Chung-Seok;Park Seong-Won
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.3 no.2
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    • pp.85-93
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    • 2005
  • Isotopes of alkali and alkaline earth metals (AM and AEM) are the main contributors to the heat load and the radiotoxicity of spent fuel (SF) . These components are separated from the SF and dissolved in a molten LiCl in an electrolytic reduction process. A mass transfer model is developed to describe the diffusion behavior of Cs, Sr, and Ba in the SF into the molten salt. The model is an analytical solution of Fick's second law of diffusion for a cylinder which is the shape of a cathode in the electrolytic reduction process. And the model is also applied to depict the concentration profile of the oxygen ion which is produced by the electrolysis of Li$_{2}$O. The regressed diffusion coefficients of the model correlating the experimentally measured data are evaluated to be greater in the order of Ba, Cs, and Sr for the metal ions and the diffusion of the oxygen ion is slower than the metal ions which implies that different mechanisms govern the diffusion of the metal ions and the oxygen ions in a molten LiCl.

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Oxidation Mechanism of SiC (SiC의 산화반응 기구)

  • 최태운;이홍림
    • Journal of the Korean Ceramic Society
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    • v.18 no.2
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    • pp.79-82
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    • 1981
  • SiC powder was heated in air over the temperature range of 1100-135$0^{\circ}C$. $\beta$-cristobalite was formed to cover the surfaces of SiC particles by the reaction: $SiC(s)+20_2(g)=SiO_2(s)+CO_2(g)$. It is assumed that the diffusion of oxygen ion through the formed surface layer of $\beta$-cristobalite controls the oxidation of the SiC particles. The diffusion coefficient of oxygen ion through the $\beta$-cristobalite layer was obtained as the following equation: $D=3.84{\times}10^{-17}$exp(-14.7/RT)

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Oxygen Diffusion and Point Defects in Single Crystal Rutile (Rutile 단결정에서 산소의 확산과 점결합)

  • 김명호;박주석;변재동
    • Journal of the Korean Ceramic Society
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    • v.28 no.12
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    • pp.989-995
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    • 1991
  • By means of the secondary ion mass spectrometer, the tracer diffusion of oxygen in rutile single crystal was measured as function of temperature and oxygen partial pressure. The tracer diffusivity was determined from the depth profile of 18O. The Po2 dependence of D suggests that the dominant defects in TiO2-y are oxygen vacancies (V{{{{ { ‥} atop { o} }}) and interstitial titanium ions (Ti{{{{ {‥‥} atop {i} }}). The doubly ionized oxygen vacancies are prominent at low temperature and Po2. However, the tetravalent interstitial titanium ions predominate at teperature above 120$0^{\circ}C$.

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Oxidation Mechanism of $Si_3N_4$ ($Si_3N_4$의 산화반응 기구)

  • 이홍림;최태운;김종우
    • Journal of the Korean Ceramic Society
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    • v.17 no.4
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    • pp.197-202
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    • 1980
  • The oxidation mechanism of the not sintered pellets and sintered bodies of $Si_3N_4$ was investigated. in air over the temperature range of 800~130$0^{\circ}C$. The $\beta$-cristobalite was instantaneously formed and covered the particles of powder packed in the not sintered and weakly sintered porous $Si_3N_4$ bodies by molecular diffusion of oxygen through the porous Si3N4 bodies and an immediate oxidation. The diffusion of oxygen ion through the formed $\beta$-cristobalite surface layer is assumed to control the further oxidation of the $Si_3N_4$ particles of the porous $Si_3N_4$ bodies. The diffusion coefficients and activation energies of oxygen ion through the $\beta$-cristobalite layer were obtained by the use of a derived equation.

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Effect of B-Cation Doping on Oxygen Vacancy Formation and Migration in LaBO3: A Density Functional Theory Study

  • Kwon, Hyunguk;Park, Jinwoo;Kim, Byung-Kook;Han, Jeong Woo
    • Journal of the Korean Ceramic Society
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    • v.52 no.5
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    • pp.331-337
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    • 2015
  • $LaBO_3$ (B = Cr, Mn, Fe, Co, and Ni) perovskites, the most common perovskite-type mixed ionic-electronic conductors (MIECs), are promising candidates for intermediate-temperature solid oxide fuel cell (IT-SOFC) cathodes. The catalytic activity on MIEC-based cathodes is closely related to the bulk ionic conductivity. Doping B-site cations with other metals may be one way to enhance the ionic conductivity, which would also be sensitively influenced by the chemical composition of the dopants. Here, using density functional theory (DFT) calculations, we quantitatively assess the activation energies of bulk oxide ion diffusion in $LaBO_3$ perovskites with a wide range of combinations of B-site cations by calculating the oxygen vacancy formation and migration energies. Our results show that bulk oxide ion diffusion dominantly depends on oxygen vacancy formation energy rather than on the migration energy. As a result, we suggest that the late transition metal-based perovskites have relatively low oxygen vacancy formation energies, and thereby exhibit low activation energy barriers. Our results will provide useful insight into the design of new cathode materials with better performance.

Effcets of Initial Oxygen Concentration on Oxygen Pileup and the Diffusion of Impurities after High-energy Ion Impaltation (초기 산소 농도가 고에너지 이온 주입시 발생하는 산소 축적 및 불순물 확산에 미치는 영향)

  • 고봉균;곽계달
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.4
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    • pp.48-56
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    • 1999
  • In this paper, we have investigated experimentally the effects of initial oxygen concentration on oxygen pileup phenomenon and the diffusion of implanted impurities. 1.2 MeV $^{11}B^{+}$ and 2.2 MeV $^{31}P^{+}$ ions were implanted into p-type (100) Si wafers with a dose of 1${\times}10^{15}$ / $\textrm{cm}^2$. Secondary ion mass spectrometry(SIMS) measurements were carried out to obtain depth distribution profiles for implanted impurities and oxygen atoms after two-step annealing of $700^{\circ}C$(20 hours)+$1000^{\circ}C$(10 hours). Residual secondary defect distribution and annealing behabiour were also studied by cross-sectional transmission electron microscopy(TEM) observations. Oxygen pileup nearly $R_p$(projected range) were observed by SIMS measurements and considerable amount of residual secondary defect layer were observed by TEM observations. It can be seen that oxygen atoms are trapped at the secondary defects by the experimental results. Enhanced diffusions of boron and phosphorus to the bulk direction were observed with the increasing of initial oxygen concentration.

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Oxidation Mechanism of TiCrN Coatings Ion-plated on Steel Substrate (강 기판위에 이온 플레이팅된 TiCrN 박막의 산화기구)

  • Lee, Dong-Bok;Kim, Gi-Young
    • Korean Journal of Materials Research
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    • v.13 no.7
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    • pp.420-423
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    • 2003
  • Coatings of TiCrN ion-plated on a steel substrate was oxidized at $800^{\circ}C$ in air, and their oxidation mechanism was presented. During oxidation, substrate elements and Ti and Cr in the coating always diffused outwardly to form the oxide scale. Simultaneously, oxygen from the atmosphere diffused inward1y to react with Ti and Cr to form $TiO_2$and $Cr_2$$O_3$, respectively. Also, the counter-diffusion of cations and oxygen resulted in some oxygen dissolution in the unoxidized TiCrN coating, and Fe dissolution in the oxide scale. When the Ti content in the coating was high, the $TiO_2$-forming tendency was strong, while when the Cr content was high, the $Cr_2$$O_3$-forming tendency was strong.

RECENT DEVELOppMENTS IN STUDIES ON DIAMOND FILMS BY ppLASMA CVD FOR FUTURE ELECTRONIC DEVICES

  • Hiraki, Akio
    • Proceedings of the Korean Vacuum Society Conference
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    • 1993.02a
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    • pp.6-6
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    • 1993
  • With brief instroduction of fabrication methods of dia.ond fillls by plasma CVD, recent progress in diamond research mainly done in the author's laboratory at Osaka University is reviewed.especially on the following topics: "low temperature diallond fabrication", "ion implantation", "hydrogen plasma treatment of ion-implanted diaaond to remove ion-induced damage", "Oxygen diffusion into the bulk assisted by the hydrogen treatllent", and "hole-burning effect".ffect".

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Effects of Additives and Atmospheres on the Grain Growth of TiO2 Ceramics (분위기와 첨가제가 TiO2 세라믹스의 입자성장에 미치는 영향)

  • 박정현;최헌진;박한수
    • Journal of the Korean Ceramic Society
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    • v.25 no.4
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    • pp.390-398
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    • 1988
  • Effects of atmospheres and adidtives on the grain growth of TiO2 ceramics were investigated. In the range of 1300~140$0^{\circ}C$, grain growth was increased in CO2 as compared with O2 atmosphere and the grain boundary migration activation energy was lower than the diffusion activation energy of oxygen ion in TiO2. Also, in the case of addition of oxides, the grain growth was increased by oxides acting as a acceptor andinhibited by oxides acting as a donor. From the above results, when the oxygen vacancy concentration was increased, the intrinsic grain boundary mobility was increased and the pore drag force was decreased due to the rapid densification. Also it seems that the pore was migrated by the surface diffusion rather than lattice diffusion.

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