• 제목/요약/키워드: Oxygen heat treatment

검색결과 328건 처리시간 0.024초

열처리에 따른 Peroxo Titanium Complex 졸 용액 기반 TiN/TiO2/FTO Resistive Random-Access Memory의 전기적 특성 (Electrical Properties of TiN/TiO2/FTO Resistive Random-Access Memory Based on Peroxo Titanium Complex Sol Solution by Heat Treatment)

  • 임현민;이진호;김원진;오승환;서동혁;이동희;김륜나;김우병
    • 한국재료학회지
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    • 제32권9호
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    • pp.384-390
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    • 2022
  • A spin coating process for RRAM, which is a TiN/TiO2/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (VO), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti3+ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 104. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO2/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

TiN 박막 성장거동에 미치는 증착온도의 영향 (The Effect of Deposition Temperature on the Growth behavior of TiN deposited by PECVD)

  • 이인우;남옥현;김문일
    • 열처리공학회지
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    • 제6권4호
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    • pp.223-229
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    • 1993
  • Extensive reseach has been performed on the process condition-micro structure-stress relations of TiN film. The various proposed models are mainly base on physical vapor deposition processes. Especially the study on the micro-structure and deposition condition has not been sufficient in TiN deposited by PECVD. In this study, therefore, we discussed the morphological changes of TiN films by PECVD with different temperature and pressure, and compared it with the structure zone model. We could find out that the oxygen and chlorine contents and the texture coefficient increased with deposition temperature, and the morphology of TiN transformed from Zone 1 to Zone T, but deposition pressure didn't remarkly affected.

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세라믹스 용사 코팅 특성에 미치는 진공열처리의 영향 (Effect of Vacuum Heat Treatment on the Properties in Thermal Sprayed Ceramics Coating)

  • 이정일;어순철;이영근
    • 열처리공학회지
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    • 제13권2호
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    • pp.98-102
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    • 2000
  • The effect of vacuum heat treatment in the thermal sprayed ceramics coating on a capstan by either high velocity oxygen fuel(HVOF) or plasma thermal spray process was investigated. The coating materials applied on the capstan were tungsten and chrome carbides. In order to characterize the interface between coating layer and bare materials, hardness, adhesion strength, X-ray diffraction(XRD) and microstructural analysis are conducted. The adhesion strength of the carbide coated materials by HVOF process is over 500MPa compared to those of plasma coating process is 230MPa. In case of the carbide coated materials by HVOF process, the adhesion strength is increased to 15MPa and the porosity is reduced under 5% by vacuum heat treatment for 5 hrs at $1000^{\circ}C$. The XRD results reveal that the increasement is believed due to the phase stabilization of metastable $Cr_3C_2$ phase to stable $Cr_{23}C_6$ phase.

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폴리이미드에 스퍼터 증착된 Cu-Cr 합금박막의 열처리 거동 (Thermal behavior of Cu-Cr Alloy Films sputter-deposited onto polyimide)

  • 임준홍;이태곤;김영호;한승희
    • 한국표면공학회지
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    • 제27권5호
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    • pp.273-284
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    • 1994
  • Thermal behavior of Cu-Cr thin alloy films has been investigated by SEM, AES, and TEM. Cu-Cr alloy films containing 3wt% Cr, 8wt% Cr have been sputter-deposited onto polyimide substrates and heat treated at $400^{\circ}C$ for 2hrs in the various atmosphere. Before heat treatment, Cu and Cr content in the film are uniform through the thickness and oxygen content in the film is negligible. Redistribution of Cr, Cu, and O in the film due to heat treatment depends on the Cr content and heat treatment atmoshpere. There kinds of thermal behavior are ascribed to the formation of surface and interface oxides as well as internal oxidation. Hillocks are observed on the surface of Cu-Cr alloy films which have been heat treated in N2. The hillocks are composed of large grainss of Cu.

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오존, 암모니아 순차적 처리를 통한 바나듐 레독스 흐름 전지용 활성화 카본 펠트 전극 개발 (Development of Activated Graphite Felt Electrode Using Ozone and Ammonia Consecutive Post Treatments for Vanadium Redox Flow Batteries)

  • 최한솔;김한성
    • 한국수소및신에너지학회논문집
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    • 제32권4호
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    • pp.256-262
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    • 2021
  • A carbon felt electrode was prepared using ozone and ammonia sequential treatment and applied as an electrode for a vanadium redox flow battery (VRFB). The physical and electrochemical analyses demonstrate that the oxygen groups facilitate nitrogen doping in the carbon felt. Carbon felt (J5O3+NH3), which was subjected to ammonia heat treatment after ozone treatment, showed higher oxygen and nitrogen contents than carbon felt (J5NH3+O3), which was subjected to ammonia heat treatment first and then ozone treatment. From the charging/discharging of VRFB, the J5O3+NH3 carbon felt electrode showed 14.4 Ah/L discharge capacity at a current density of 150 mA /cm2, which was 15% and 33% higher than that of J5NH3+O3 and non-activated carbon felt (J5), respectively. These results show that ozone and ammonia sequential treatment is an effective carbon felt activation method to increase the performance of the vanadium redox flow battery.

Cu-free 전구체를 이용하여 구리 기판 위에 ${Bi_2}{Sr_2}{CaCu_2}{O_8}$ 초전도 후막의 제조 및 특성 (Fabricatiion and Characterization of ${Bi_2}{Sr_2}{CaCu_2}{O_8}$ Superconductor Thick Films on Cu Substrates using Cu-free Precursors)

  • 한상철;김상준;한영희;성태현;한병성
    • 한국전기전자재료학회논문지
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    • 제13권4호
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    • pp.349-358
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    • 2000
  • Fabrication and Characterization of Bi$_{2}$/Sr$_{2}$/CaCu$_{2}$/O$_{8}$(Bi2212) superconductor thick films were fabricated successfully on C tapes by liquid reaction between Cu-free precursors of Bi$_{x}$/SrCaO/$_{y}$(x=1.2-2) and Cu tapes. Cu-free Bi-Sr-Ca-O powder mixtures were screen-printed on Cu tapes and heat-treated at 850-87$0^{\circ}C$ for several minutes in air oxygen nitrogen and low oxygen pressure. In order to obtain the optimum heat-treatment condition we studied the effect of the precursor composition the printing thickness and the heat-treatment atmosphere on the superconducting properties of Bi2212 films and the reaction mechanism. Microstructures and phases of thick films were analyzed by films and the reaction mechanism. Microstructures and phases of thick films were analyzed by optical microscope and XRD. The electric properties of superonducting films were examined by the four probe method. At heat-treatment temperature the thick films were in a partially molten state by liquid reaction between CuO of the oxidized copper tape and the precursors which were printed on Cu tapes. During the heat-treatment procedure Bi2212 superconducting particle nucleate and grow in preferred orientations.ons.s.

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무산화 직화로 버너의 연소특성이 강재표면의 산화에 미치는 영향 (Effects of Combustion Characteristics of the Burners for Non-Oxidizing Direct Fired Furnaces on the Oxidization of the Surface of Steel Plate)

  • 박홍수;유갑종
    • 대한기계학회논문집B
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    • 제23권3호
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    • pp.330-341
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    • 1999
  • An experimental study for the two types of burners used in the non-oxidizing direct fired furnaces of the heat treatment process for the cold rolled plate has been carried out to investigate the combustion characteristics and the oxidization of the surface of steel plate. A steep temperature gradient and entrainment of residual oxygen were found near the heating surface in the flame of the nozzle mixing burner which has strong swirl velocity component. It was concluded that the elimination of the residual oxygen and the increase of the temperature of combustion gas on the heating surface are needed to enhance the performance of the burners for application to the non-oxidizing direct fired furnaces.

열처리 온도 및 분위기 변화에 따른 Bi-2223 초전도 선재에서의 특성변화 (superconducting properties of Bi-2223 tapes with various heat treatment condition)

  • 하동우;이동훈;하홍수;오상수;김홍대;양주생;윤진국;최정규;권영길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.527-530
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    • 2002
  • A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. In this paper, initial annealing of Bi-2223/Ag wire to transform Bi-2212 orthorhombic from Bi-2212 tetragonal Precursor was investigated. This initial annealing step at low oxygen partial pressure were to transform Bi-2212 orthorhombic structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 Phases were appeared at higher annealing temperature. Critical currents(Je) of Bi-2223/Ag tapes were sintered at low oxygen Partial pressure were higher than that of the wires sintered at atmosphere condition. In order to investigate the effect of rolling reduction ratio, Bi-2223/Ag HTS tapes were rolled with different reduction ratio. There were no clear difference of Je and filaments shape with various rolling reduction ratio.

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산화 적층 결합의 생성, 성장 및 소멸에 관한 연구 - 제1부:산화 적층 결함의 생성과 열적 거동 (A Study on Nucleation, Growth and Shrinkage of Oxidation Induced Stacking Faults (OSF) -Part 1: Nucleation and Thermal Behavior of Oxidation Induced Stacking Faults(OSF))

  • 김용태;김선근;민석기
    • 대한전자공학회논문지
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    • 제25권7호
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    • pp.759-766
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    • 1988
  • the effect of heat treatment in oxygen ambient on the nucleation and growth of oxidation induced stacking faults(OSF) in n-type(100)silicon wafer has been investigated. The growth of OSF is determind as a function of oxygen concentration in silicon wafer, heat treatment time and temperature, and the activation energy for the growth of OSF can be obtained from the growth kinetics. The activation energies are respectively 2.66 eV for dry oxidation and 2.37 eV for wet oxidation. In this paper, we have also studied the structural feature of OSF with the comparison of optical microscopic morphology and crystalline structure.

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KrF 엑사이머 레이저 법을 이용한 다이아몬드 박막의 평탄화 (Planarization of Diamond Films Using KrF Excimer Laser Processing)

  • 이동구
    • 열처리공학회지
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    • 제13권5호
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    • pp.318-323
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    • 2000
  • The planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD (chemical vapor deposition) was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate of diamond were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The threshold energy density from the experiment for etching of pure crystalline diamond was about $1.7J/cm^2$ and fairly matched the simulation value. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. When the angle of incidence was $80^{\circ}$ to the diamond surface normal, the peak-to-valley surface roughness was Significantly reduced from $20{\mu}m$ to $0.5{\mu}m$.

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