• Korean Chemical Engineering Research
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• v.54 no.3
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• pp.394-403
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• 2016

$H_2$ production by chemical looping is an efficient method to convert hydrocarbon fuel into hydrogen with the simultaneous capture of concentrated $CO_2$. This process involves the use of an iron based oxygen carrier that transfers pure oxygen from oxidizing gases to fuels by alternating reduction and oxidation (redox) reactions. The enhanced reactivities of copper oxide doped iron-based oxygen carrier were reported, however, the fundamental understandings on the interaction between $Fe_2O_3$ and CuO are still lacking. In this study, we studied the effect of dopant of CuO to $Fe_2O_3/ZrO_2$ particle on the morphological changes and the associated reactivity using various methods such as SEM/EDX, XRD, BET, TPR, XPS, and TGA. It was found that copper oxide acted as a chemical promoter that change chemical environment in the iron based oxygen carrier as well as a structural promoter which inhibit the agglomeration. The enhanced reduction reactivity was mainly ascribed to the increase in concentration of $Fe^{2+}$ on the surface, resulting in formation of charge imbalance and oxygen vacancies. The CuO doped $Fe_2O_3/ZrO_2$ particle also showed the improved reactivity in the steam oxidation compared to $Fe_2O_3/ZrO_2$ particle probably due to acting as a structural promoter inhibiting the agglomeration of iron species.

• Journal of the Korean Ceramic Society
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• v.29 no.4
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• pp.273-282
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• 1992

The effects of intrinsic and extrinsic gettering on the formation of microdefects in the wafer and on the electrical performance at near-surfaces of three different oxygen-bearing Czochralski silicon single crystal wafers were investigated by varying the combinations of the pre-heat treatments and the phosphorus diffusion through the back-surface of the wafers. The wafers which had less than 10.9 ppma of oxygen formed no gettering zones irrespective of any pre-heat treatments, while the wafers which had more than 14.1 ppma of oxygen and were treated by Low+High pre-heat treatments generated the gettering zone comprising oxygen precipitates, staking faults, and dislocation loops. The effects of extrinsic gettering by phosphorus diffusion were evident in all samples such that the minority carrier lifetimes were increased and junction leakage currents were decreased. However, the total gettering effects among the different pre-heat treatments did not necessarily correspond to the gettering structure revealed by synchrotron radiation section topograph.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.109-115
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• 2005

The study of Oxygen Vacancy on SnO$_2$ thin films grown by thermal chemical vapor deposition were investigated with different substrate temperature. X-ray diffraction showed that the crystallinity of the grown thin films increased with increasing substrate temperature. Two narrow peaks and two broad peaks were observed from the photoluminescence measurements at 6 K. The intensity and shape of the broad peaks were changed with increasing substrate temperature. It was concluded that the origin of the broad peak at 2.4 eV was due to oxygen vacancies and that of peak at 3.1 eV was related to structural defects. Hall effect measurements showed that the carrier density was decreased as increasing deposition time from 10 to 30 min., but increased for the deposition of 60 min.

• Bulletin of the Korean Chemical Society
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• v.27 no.2
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• pp.255-265
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• 2006

The oxidation of hydrazobenzene by molecular oxygen in the polar solvent methanol is catalysed by a Schiff's base complex Co(3MeOsalen) which is a synthetic oxygen carrier. The products are trans-azobenzene and water. The rate of the reaction has been studied spectrophotometrically and the rate law established. A mechanism involving a ternary complex of catalyst, hydrazobenzene and molecular oxygen has been proposed. The kinetic studies show that a ternary complex $CoL{\cdot}H_2AB{\cdot}O_2$ is involved in the rate determining step. The reactions are summarised in a catalytic cycle. The kinetic data suggest that a ternary complex involving Co(3MeOsalen), triphenyl-phosphine and molecular oxygen is catalytically acive species but at higher triphenylphosphine concentrations the catalyst becomes inactive. The destruction of the catalytic activity could be due to the catalyst becoming coordinated with triphenyl phosphine at both z axis sites of the complex e.g. Co (3MeOsalen)$(PPh_3)_2$.

• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.229-233
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• 1993

The effects of differential partial pressures of oxygen during sputtering on the magnetic and recording characteristics of magneto-optical disks were investigated. Different flows of oxygen were deliberately introduced into the sputtering chamber to have a variety of partial pressures of oxygen during sputtering. A residual gas analyzer was employed to monitor the oxygen peak before, during, and after sputtering and to estimate the reacted oxygen amount. Most of the oxygen introduced into the chamaber was reacted during sputtering. As the partial pressure of oxygen increased, the oxygen content of the TbFeCoCr film increased also. The oxygen appeared to be bound as Tb-O, effectively decreasing the magnetically active Tb content of the film The coercivity decreased but the squareness of the Kerr hysteresis loops was still excellent. The perpendicular anisotropy was not significantly affected by oxygen amount. The carrier-to-noise ratio, includi!1g the write power sensitivity and bias field sensitivity did not change too much with oxygen content in the film The disks sputtered with oxygen showed better bias field sensitivity with lower write power threshold than the disk sputtered without oxygen, due to high demagnetization during domain formation. No significant degradation of coercivity for the disk sputtered oxygen was observed during an accelerated aging test.

• Journal of Microbiology and Biotechnology
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• v.20 no.2
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• pp.346-349
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• 2010

Coenzyme $Q_{10}$ ($CoQ_{10}$) production from Rhizobium radiobacter T6102 was monitored under various oxygen supply conditions by controlling the agitation speeds, aeration rates, and dissolved oxygen levels. As the results, the $CoQ_{10}$ production was enhanced by limited oxygen supply. To investigate whether the $CoQ_{10}$ production is associated with its physiological functions of electron carrier and antioxidant, the effects of sodium azide and hydrogen peroxide on the $CoQ_{10}$ production were studied, showing that the $CoQ_{10}$ contents were slightly enhanced with increasing sodium azide (up to 0.4 mM) and hydrogen peroxide (up to $10\;{\mu}M$) concentrations. These results suggest the plausible mechanism where the limited electron transfer stimulating the environments of limited oxygen supply and oxidative stress could accumulate the $CoQ_{10}$, providing the relationship between the $CoQ_{10}$ physiological functions and its regulation system.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2004.05a
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• pp.347-352
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• 2004

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.686-692
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• 2000

Tin-doped In2O3 (ITO) films were fabricated using a d.c. magnetron reactive sputteirng of a In-10 wt% Sn alloy target in an Ar and O2 gas mixture. To understand the behavior of the carrier mobility in ITO films with O2 partial pressure, the resistivity, carrier concentration and mobility, film density, and intrinsic stress in the films were measured with O2 partial pressure. It was found experimentally that the carrier mobility increased rapidly as the film density increased. In the ITO film with the density close to theoretical one, the mean free path was the same as the columnar diameter. This indicated that the mobility in ITO films was strongly influenced by the crystall size. However, in the case where the film density was smaller than a theoretical density, the mean free paths were also smaller the columnar diameter. It was analyzed that the electron scattering at pores and holes within the crystalline was the major obstacle for electron conduction in ITO films. The measurement of intrinsic stress in ITO films also made it clear that the density of ITO films was controlled by the bombardment of oxygen neutrals on the growing film.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.196.2-196.2
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• 2015

There are various issues fabricating the successful and efficient solar cell structures. One of the most important issues is band alignment technique. The solar cells make the carrier in their active region over the p-n junction. Then, electrons and holes diffuse by minority carrier diffusion length. After they reach the edge of solar cells, there exist large energy barrier unless the good electrode are chosen. Many various conductor with different work functions can be selected to solve this energy barrier problem to efficiently extract carriers. Tungsten oxide has large band gap known as approximately 3.4 eV, and usually this material shows n-type property with reported work function of 6.65 eV. They are extremely high work function and trap level by oxygen vacancy cause them to become the hole extraction layer for optical devices like solar cells. In this study, we deposited tungsten oxide thin films by sputtering technique with various sputtering conditions. Their electrical contact properties were characterized with transmission line model pattern. The structure of tungsten oxide thin films were measured by x-ray diffraction. With x-ray photoelectron spectroscopy, the content of oxygen was investigated, and their defect states were examined by spectroscopic ellipsometry, UV-Vis spectrophotometer, and photoluminescence measurements.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1596-1601
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• 2007

Aluminum doped zinc oxide (AZO) thin films were deposited on coming glass substrates using an Nd:YAG pulsed laser deposition technology. The AZO thin films were deposited with various growth conditions such as the substrate temperature and oxygen partial pressure. In this work, we used various measurement technologies in order to investigate the electrical, structural, and optical properties of the AZO thin films. Among the AZO thin films, the one prepared at the substrate temperature of $300^{\circ}C$ and oxygen partial pressure of 5 mTorr showed the best properties of an electrical resistivity of $4.63{\times}10^{-4}{\Omega}{\cdot}cm$, a carrier concentration of $9.25{\times}10^{20}cm^{-3}$, and a carrier mobility of $31.33cm^2/V{\cdot}s$. All the AZO thin films showed an high average optical transmittance over 90 % in visible region.