• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.103-105
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• 2015

Effect of silicon doping into ZnSnO systems was investigated using solution process. Addition of silicon was used to suppress oxygen vacancy generation. The transfer characteristics of the device showed threshold voltage shift toward the positive direction with increasing Si content due to the high binding energy of silicon atoms with oxygen. As a result, the carrier concentration was decreased with increasing Si content.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.45-50
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• 2006

Oxygen-deficient anatase and rutile titanium dioxide $(TiO_{2-\delta})$ thin films were prepared by a sol-gel method and their structural, electronic, and magnetic properties were investigated. Both anatase and rutile $TiO_{2-\delta}:Fe$ Fe films exhibited ferromagnetism at room temperature for a limited range of Fe doping. For the same amount of Fe doping, the anatase sample exhibited a higher magnetic moment than the rutile one. Result of conversion electron Mossbauer spectroscopy measurements indicates that $Fe^{3+}$ ions substituting the octahedral $Ti^{4+}$ sites mainly contribute to the room-temperature ferromagnetism. Some of the anatase $TiO_{2-\delta}:Fe$ films exhibited p-type character but the observed feromagnetism turns out to be independent of the hole concentration. The room-temperature ferromagnetism can be explained in terms of a direct ferromagnetic coupling between two neighboring $Fe^{3+}$ ions via an electron trapped in oxygen vacancy in $TiO_{2-\delta}:Fe$.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.170-170
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• 2006

• Nuclear Engineering and Technology
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• v.23 no.3
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• pp.321-327
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• 1991

A defect model e)[plaining the oxygen potential of Gadolinia doped urania based on the defect structure of pure urania has been developed. Gd-dopants are assumed to stay in the cation sites pushing away nearby oxygen interstitials reducing the number of interstitial sites. Gd-dopants also form dopant-vacancy clusters in the abundance of oxygen vacancies. This model explains the discontinuous change of the oxygen potential at O/M= as well as the increase of the potential with the dopant concentration.

• Journal of the Korean Society of Combustion
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• v.10 no.2
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• pp.1-8
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• 2005

Incomplete combustion due to quenching in a narrow confinement has been a major problem for realization of a reliable micro combustion device. In most micro combustors, effects of flows are absent in the quenching because the flow is laminar and no severe stretch is present. In such circumstance, quenching is caused either by heat loss or by removal of active radicals to the wall surface of the confinement. An experimental investigation was carried out to investigate the relative significance of these two causes of quenching of a premixed flame. A premixed jet burner with a rectangular cross section at the exit was built. At the burner exit, the flame stands between two walls with adjustable distance. The gap between the two walls at which quenching occurs was measured at different wall surface conditions. The results were analyzed to estimate the relative significance of heat loss to the wall and the removal of radicals at the surface. The measurements indicated that the quenching distance was independent of the wall surface characteristics such as oxygen vacancy, grain boundary, or impurities at low temperature. At high temperature, however, the surface characteristics strongly affect the quenching distance, implying that radical removal at the wall plays a significant role in the quenching process.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.104-108
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• 2016

To research the correlation between oxygen vacancy and the electrical characteristics of ZTO, which is made by using a target mixed ZnO:SnO₂=1:1, the ZnO, SnO₂ and ZTO were analyzed by PL, XPS, XRD patterns and electrical properties. It was compared with the electron orbital spectra of O 1s in accordance with the electrical characteristics of ZnO, SnO₂ and ZTO. The electrical characteristics of ZTO were improved by increasing the annealing temperatures, due to the high degree of crystal structures at a high temperature, and the physical properties of ZTO was similar to that of ZnO. The amorphous structure of SnO₂ was increased with increasing the temperature. The Schottky contact of oxide semiconductors was formed using the depletion region, which is increased by the electron-hole combination due to the annealing processes. ZnO showed the Ohmic contact in spite of a high annealing temperature, but SnO₂ and ZTO had Schottky contact. As such, it was confirmed that the electrical properties of ZTO are affected by the molecules of SnO₂.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.371-374
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• 1999

Y2O3 and Nb2O5 co-doped tetragonal zirconia polycrystals((Y, Nb)-TZP) containing 10 to 30 vol% $Al_2O_3$ were prepared and hydrothermal stability of the composites was evaluated after aging for 5 h at the temperature range of $150^{\circ}C$ $250^{\circ}C$ under 4 MPa $H_2O$ vapor pressure in an autoclave. The (Y, Nb)-TZP/Al2O3 composites showed excellent phase stability under the hydrothermal conditions, as compared with the 3Y-TZP/$Al_2O_3$ composites, due to the combined effects of the Y-Nb ordering in the $t-ZrO_2$ lattice, the reduction of oxygen vacancy concentration, and the $Al_2O_3$ addition. The strength and fracture toughness of the (Y, Nb)-TZP/$Al_2O_3$ composite, containing 20 vol% of 2.8 $Al_2O_3$ particles, were 700 MPa and 8.1 MP.$am^{1/2}$, respectively.

• Journal of Powder Materials
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• v.13 no.2 s.55
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• pp.112-118
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• 2006

[ $R_{1/3}Sr_{2/3}FeO_{3}$ ](R=Pr, Nd, and Sm) was synthesized and their magnetic properties and charge ordering(CO) transition related with lattice dynamics and oxygen vacancy were systematically investigated. The charge disproportion ation(CD) in $R_{1/3}Sr_{2/3}FeO_{3}$(R=Pr,Nd) was in which two kins of iron with valence state $Fe^{3+}$ and $Fe^{5+}$ were found with ratio of 2:1. In this charge ordering state a sequence of $Fe^{3+}Fe^{3+}Fe^{5+}Fe^{3+}Fe^{3+}Fe^{5+}$ exists aligned along the [111] direction of the pseudocubic perovskite structure. The charge ordering exist in distorted structure involving $t_{pd}$ hybridization. The disordering phases coexist in distorted structure as temprature in creases that is controlled amount of oxygen vacancy. The magnetic hyperfine fields indicate charge tranfering temperature as it dissapeared drastically.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.66-69
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• 2017

In this paper, solution based Indium Zinc Oxide thin film transistors (IZO TFTs) were fabricated with PVP gate dielectric. To enhance the electrical properties, UV-O3 treatment is proposed on solution based IZO TFTs. The gate leakage current and interface trap density is compatible with conventional ZnO-based TFT with inorganic gate insulator. Especially, the UV-treated device shows improved electrical characteristics compared to the untreated device. These results can be explained by X-ray photoelectron spectroscopy (XPS) analysis, which shows that the oxygen vacancy of UV-O3 treatment is higher than that of no treatment.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.53-58
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• 2022

One of the most promising emerging technologies for the next generation of nonvolatile memory devices based on resistive switching (RS) is the resistive random-access memory mechanism. To date, RS effects have been found in many transition metal oxides. However, no clear evidence has been reported that ZnO-based resistive transition mechanisms could be associated with strong correlation effects. Here, we investigated N, F-co-doped ZnO (NFZO), which shows bipolar RS. Conducting micro spectroscopic studies on exposed surfaces helps tracking the behavioral change in systematic electronic structural changes during low and high resistance condition of the material. The significant difference in electronic conductivity was observed to attribute to the field-induced oxygen vacancy that causes the metal-insulator Mott transition on the surface. In this study, we showed the strong correlation effects that can be explored and incorporated in the field of multifunctional oxide electrons devices.