• Transactions on Electrical and Electronic Materials
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• 제5권3호
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• pp.113-119
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• 2004

Structural and optical properties of as-synthesized, Ga$_2$O$_3$-coated, and Al$_2$O$_3$-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH$_3$ atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2nm-thick Ga$_2$O$_3$ layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al$_2$O$_3$ by atomic layer deposition technique. Our study suggests that the Al$_2$O$_3$-coating passivates some of surface states in the GaN nanowires.

• 한국세라믹학회지
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• 제43권10호
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• pp.601-606
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• 2006

For the purpose of development of red color stain body, bone body which can be fired at 1180$^{\circ}C$ and has a higher degree of whiteness and transmission was developed and a property experiment depending on the content of $Fe_2O_3$ was performed. For manufacturing this body, 9% addition of bone ash to commercialized white body resulted in the best whiteness and proper physical characteristics. In an experiment of oxidized iron addition using this body as a basis, red color stain body fired up to 1150$^{\circ}C$ following the addition of 6% oxidized iron showed physical characteristics such as 5.4R color closer to theory color, 0.08% water absorption rate, 9.1% shrinkage, and 1861 kgf/$cm^2$ bending strength, which implies that this body is suitable for red color stain body.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2019년도 추계 학술논문 발표대회
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• pp.31-32
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• 2019

In this study, oxidized graphene nanoplatelet(GO) was prepared by oxidizing graphene nanoplatelet(GNP) with nitric acid in order to solve the problem of dispersion of GNP, one of nano materials. GNP/Epoxy and GO/Epoxy paint were prepared by mixing GNP, GO with 0.1, 0.3, 0.5 and 1.0 wt.% in epoxy paint and the mechanical properties were evaluated. As a result, GNP/Epoxy and GO/Epoxy paints showed better mechanical properties than Neat Epoxy which did not incorporate GNP, GO. Especially, when 0.3 wt.% of GO was incorporated into epoxy resin, it showed higher tensile strength than Neat Epoxy. It was confirmed that acid treatment of GNP was effective in improving the mechanical properties of epoxy paint. However, graphene material was found that it was not effective in improving the bond performance of the epoxy paint.

• 대한금속재료학회지
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• 제48권3호
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• pp.235-240
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• 2010

The interfacial adhesion properties of enamel-coated, alloyed steels were in detail characterized by spectroscopic techniques. The surfaces of alloyed steels existed as oxidized states of $Fe_3O_4$. Therefore, the oxidized surfaces of the steels significantly interacted with the coated enamels for the adhesion. Ti-alloyed steel showed many micro-boundaries during thermal treatment and these micro-boundaries might cause the decline of the interfacial adhesion between enamel and steel. The depth profiles of enamel-coated, alloyed steels were investigated by GDS (glow discharge spectroscopy) and Ti component was found to be related to the interfacial adhesion between enamel and steel.

• 한국세라믹학회지
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• 제49권3호
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• pp.241-246
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• 2012

Physical properties of plasma electrolytic oxidized layers of 8 different kinds of Al alloys, A-1100, A-2024, A-5052, A-6061, A-6063, A-7075, ACD-7B and ACD-12 were investigated. The electrolyte for plasma electrolytic oxidation was mixture of distilled water, $Na_2P_2O_7$, KOH and some metal salts. Growth rate of oxide layer was slower in $Na_2P_2O_7$ electrolyte system than in $Na_2SiO_3$ system, and Ra50 surface roughness of oxidized layer was below $1.2{\mu}m$. Surface hardness in $Na_2P_2O_7$ electrolyte system is higher than in $Na_2SiO_3$ system, and roughness was lower in $Na_2P_2O_7$ electrolyte system than in $Na_2SiO_3$ system.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.98-103
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• 2013

The alumina substrates that Ni electrode was printed on and the multi-layered PTCR thermistors of which composition is $(Ba_{0.998}Ce_{0.002})TiO_3+0.001MnCO_3+0.05BN$ were fabricated by a thick film process, and the effect of re-oxidation temperature on their resistivities and resistance jumps were investigated, respectively. Ni electroded alumina substrate and the multi-layered PTC thermistor were sintered at $1150^{\circ}C$ for 2 h under $PO_2=10^{-6}$ Pa and then re-oxidized at $600{\sim}850^{\circ}C$ for 20 min. With increasing the re-oxidation temperature, the room temperature resistivity increased and the resistance jump ($LogR_{290}/R_{25}$) decreased, which seems to be related to the oxidation of Ni electrode. The small sized chip PTC thermistor such as 2012 and 3216 exhibits a nonlinear and rectifying behavior in I-V curve but the large sized chip PTC thermistor such as 4532 and 6532 shows a linear and ohmic behavior. Also, the small sized chip PTC thermistor such as 2012 and 3216 is more dependent on the re-oxidation temperature and easy to be oxidized in comparison with the large sized chip PTC thermistor such as 4532 and 6532. So, the re-oxidation conditions of chip PTC thermistor may be determined by considering the chip size.

• 한국전기전자재료학회논문지
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• 제30권7호
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• pp.427-431
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• 2017

In this paper, we discuss ${\beta}-Ga_2O_3$ thin films that have been grown on freestanding GaN (FS-GaN) using furnace oxidation. A GaN template was grown by horizontalhydride vapor phase epitaxy (HVPE), and FS-GaN was fabricated using the laser lift off (LLO) system. To obtain ${\beta}-Ga_2O_3$ thin film, FS-GaN was oxidized at $900{\sim}1,100^{\circ}C$. Surface and cross-section of prepared ${\beta}-Ga_2O_3$ thin films were observed by field emission scanning electron microscopy (FE-SEM). The single crystal FS-GaNs were changed to poly-crystal ${\beta}-Ga_2O_3$. The oxidized ${\beta}-Ga_2O_3$ thin film at $1,100^{\circ}C$ was peel off from FS-GaN. Next, oxidation of FS-GaNwas investigated for 0.5~12 hours with variation of the oxidation time. The thicknesses of ${\beta}-Ga_2O_3$ thin films were measured from 100 nm to 1,200 nm. Moreover, the 2-theta XRD result indicated that (-201), (-402), and (-603) peaks were confirmed. The intensity of peaks was increased with increased oxidation time. The ${\beta}-Ga_2O_3$ thin film was generated to oxidize FS-GaN.

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.606-610
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• 2007

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC thin films, in which they were deposited on the oxidized Si substrate by APCVD method according to growth temperature. Since the phonon modes were not measured for $0.4{\mu}m$ thick 3C-SiC, $2.0{\mu}m$ thick 3C-SiC deposited on the oxidized Si at $1180^{\circ}C$, in which TO (transverse optical mode) and LO (longitudinal optical mode) phonon modes were appeared at 794.4 and $965.7cm^{-1}$, respectively. The broad FWHM (full width half maximum) can explain that the crystallinity of 3C-SiC deposited at $1180^{\circ}C$ becomes polycrystalline instead of disorder crystal. Additionally, the ratio of intensity $I_{LO}/I_{TO}{\approx}1.0$ of 3C-SiC indicates that the crystal disorder of $3C-SiC/SiO_2/Si$ is small. Compared poly $3C-SiC/SiO_2$ with $SiO_2/Si$ interfaces, $1122.6cm^{-1}$ phonon mode was measured which may belong to C-O bonding and two phonon modes, 1355.8 and $1596.8cm^{-1}$ related to D and G bands of C-C bonding in the Raman range of 200 to $2000cm^{-1}$.

• 한국건설순환자원학회논문집
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• 제11권1호
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• pp.48-54
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• 2023

본 연구에서는 금속성분을 다량 함유한 전기로산화슬래그(EOS)를 골재로 활용한 콘크리트에 도전성이 높은 카본계 재료를 혼입하여 현장적용이 가능한 EMP 차폐 콘크리트의 최적배합을 도출하고자 기초적인 물성과 두께별 EMP 차폐성능을 평가하였다. 평가결과 슬럼프는 카본섬유(CF)의 혼입량이 증가할수록 저하, 밀드카본(MCF) 혼입시 증가하는 것을 확인할 수 있었다. 압축강도는 EOS가 NA에 비해 강도를 증진시키는 것을 확인할 수 있었으며, CF 및 MCF 혼입시 강도가 저하되는 것을 확인할 수 있었다. EMP 차폐 측정결과 두께가 증가할수록 차폐율이 증가하였으며, 도전성 재료의 첨가량보다 도전성 재료의 종류 및 시험체의 두께가 차폐율 증가에 영향력이 더 큰 것을 확인할 수 있었다. 종합적으로 비교평가를 진행한 결과 EMP 차폐 콘크리트 배합으로 EOS CF 0.2가 적합한 것으로 사료된다.

• 한국표면공학회지
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• 제17권2호
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• pp.29-40
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• 1984

The structure of rapidly solidified Al-Si-based alloys and its relationship to subsequent anodic film growth in near neutral and acid solutions have been investigated. Solidification of the alloys proceeds via pre-dendritic nuclei, associated with rugosity of the casting surface, from which cellular-type growth, comprised of aluminium-rich material surrounded by silicon-containing material, emanates. Observation of ultramicrotomed sections of the alloys and their anodic films reveals the local oxidation of the silicon-rich phase and its incorporation into the anodic alumina film, formed in near neutral solutions. Such incorporation occurs but resultant isolation of the silicon-rich phase is not possible for anodizing in phosphoric acid, and a three-dimensional network of the oxidized silicon-containing phase, with continuing development of porous anodic alumina, is observed.