• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.373-379
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• 2002

We investigated the evolution of magnetoresistance and magnetic property of tunneling magnetoresistive(TMR) device with microstructure and plasma oxidation time. TMR devices have potential applications for non volatile MRAM and high density HDD reading head. We prepared the tunnel magnetoresistance(TMR) devices of Ta($50{\AA}$)/NiFe($50{\AA}$)/IrMn($150{\AA}$)/CoFe($50{\AA}$)/Al($13{\AA}$)-O/CoFe($40{\AA}$)/FiFe($400{\AA}$)/Ta(($50{\AA}$) structure which have $100{\times}100\mu\textrm{m}^2$ junction area on $2.5{\times}2.5\textrm{cm}^2$ Si/$SiO_2$(($1000{\AA}$) substrates by an inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using an ICP plasma oxidation method by with various oxidation time from 30 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We found that the oxidized sample for oxidation time of 80 sec showed the highest MR radio of 30.31 %, while the calculated value regarding inhomogeneous current effect indicated 25.18 %. We used transmission electron microscope(TEM) to investigate microstructural evolution of insulating layer. Comparing the cross-sectional TEM images at oxidation time of 150 sec and 360 sec, we found that the thickness and thickness variation of 360 sec-oxidized insulating layer became 30% and 40% larger than those of 150 sec-oxidized layer, repectively. Therefore, our results imply that increase of thickness variation with oxidation time may be one of the major treasons of the MR decrease.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.365-370
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized $n^+$ Si wafers. The thickness of ~30 nm $Al_2O_3$ films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The $Al_2O_3$ films were rapid-annealed at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$, and $1,000^{\circ}C$, respectively. Active layers of ZTO films were deposited on the $Al_2O_3/SiO_2$ coated $n^+$ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of $Al_2O_3$ films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.12-13
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• 2006

$Ga_2O_3$ is associated with the fabrication of thin window layer of solar cell. Usually, $Ga_2O_3$ is synthesized from Ga-metal oxidation method and GaN mono-crystal heat treatment method. We synthesized $Ga_2O_3$ powder using two methods and analyzed powder using latter method compared with powder by former method. XPS, XRD, IR analysis are conducted. XPS result, surface of GaN powder is almost oxidized to $Ga_2O_3$ at $1124^{\circ}C$ heat treatment and XRD and IR result, the inside of GaN powder is dramatically oxidized at $1124^{\circ}C{\sim}1300^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.700-704
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• 2003

This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 ％ and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2017.05a
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• pp.843-848
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• 2017

Metal exposed to high temperature/high pressure/oxidizer-rich environment may cause rapid oxidation(ignition and combustion). In this study, a DC power supply test system that controls the temperature of specimen by supplying power to the specimen was constructed and after simulating the high temperature/stagnation/oxidizer-rich environment, the metal oxidation and ignition of STS series metal materials were evaluated. As a result, we was confirmed that the deformation (discoloration) of the selected material, the change in the surface roughness and the peeling of the metal surface were observed, and that the weight and the specimen thickness were changed. The most oxidized specimen was STS 304 and the less oxidized specimen was XM-19.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2020.06a
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• pp.181-182
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• 2020

In this study, oxidized graphene nanoplatelet(GO) was prepared by oxidizing graphene nanoplatelet(GNP) with nitric acid in order to solve the problem of dispersion of GNP, one of nano materials. GNP/Epoxy and GO/Epoxy were prepared by mixing GNP, GO with 0.1, 0.3, 0.5 and 1.0 wt.% in epoxy and the mechanical properties, bond performance were evaluated. As a result, GNP/Epoxy and GO/Epoxy showed higher tensile strength than Neat Epoxy at the 0.1, 0.3 wt.%. Especially, when 0.1 wt.% of GO was incorporated into epoxy resin, it showed highest tensile strength. It was confirmed that acid treatment of GNP was effective in improving the mechanical properties of epoxy paint. However, graphene material was found that it was not effective in improving the bond strength of the epoxy paint.

• Journal of the Korean Society for Precision Engineering
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• v.10 no.3
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• pp.31-40
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• 1993

The vibration-proof material normally used in structural components of precision machinery or measuring instruments requires higher damping in vibration and better characteristics in dimensional stability and rigidity to accomplish the quality assurance of the products. In this study the ferrite-resin material, which is the mixture of epoxy resin and the oxidized steel (Fe$_{3}$O$_{4}$: ferrite) in consideration of characteristics of aggregator and binder, is developed and investigated as one of vibration-proof materials. Four kinds of composite plates for experiments are made by adding another filler materials such as steel powder, granite powder and carbon-fiber sheet to the basic ferrite-resin matrix. Their characteristics are compared with a cast iron specimen which has the same bending rigidity as other specimens. The ferrite-resin material gives the best damping effect in the motor-induced vibration test. Therefore, the material can be applied to the manufacturing industry for vibration damping of machine elements.

• Proceedings of the KSME Conference
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• 2001.06c
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• pp.502-506
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• 2001

This paper presents a new method for cutting steel with a diamond tool using electrolysis. The electrolysis is adopted in the diamond cutting to prevent the high chemical activity between a diamond tool and an iron-based workpiece. The basic principle of the method is to oxdize a thin substrate of the workpiece by electrolysis ahead of the diamond tool which cuts the oxidized layer. A desired shape can be obtained by repeating this process. The cutting force is reduced because the diamond tool removes only the weakened material by electroysis. The reduction of the cutting force suppresses the excessive wear of the diamond tool. The oxidization penetrates several micrometers in depth along the previously formed shape. The corrosion rates depend on current density and make suggestions on the optimum cutting conditions.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.56 no.1
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• pp.37-44
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• 2007

This paper describes characteristics for copper oxide growth of polyvinyl chloride(PVC) insulated wires by series arc. In this experiment, 600V IV wires were used, and characteristics of oxide growth and ignition process were analyzed in case load was 300W, 460W and 600W, respectively. In the result of experiment, covering materials were molten, carbonized and ignited, whereas, oxidized materials were grown in conducting material. During copper oxide was growing, contact voltages and power dissipations increased. When there is copper oxide growth, the waveform of current showed sinusoidal waveform, and the waveform of voltage showed modified waveform. Oxidized materials were heated at about $905^{\circ}C$, surface structure showed irregular shapes, and cross-section showed multiple cracks. And, the results of this experiment were applied to the fire cause analysis of fire evidence collected at the fire scene.

• Textile Coloration and Finishing
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• v.19 no.5
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• pp.24-29
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• 2007

It is well known that certain classes of dye are reducible to stable colorless leuco compounds, which can be oxidized in air back to the colored species. We now reported that bis(4-dialkylaminophenyl)squaraine dyes are readily reduced in solution by borohydride to give alkali soluble leuco compound, which exists in the 3-hydroxy 2,4-bis(4-dialkylaminophenyl)cyclobuten-one. New alkylamine leuco compounds were synthesized by the reaction of leuco chloro-squaraine with alkylamine derivatives. The leuco compounds are easily isolated and can be air oxidized back to the squaraine dyes. These dyes have many technical application. e.g. in xerography, solar cell, optical recording material, redox indicators, and enzyme assays.