• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.307.1-307.1
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• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

• Journal of the Korean Vacuum Society
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• v.1 no.3
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• pp.376-381
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• 1992

Tungsten silicide films were deposited on the highly phosphorus-doped poly Si/SiO2/Si substrates by Low Pressure Chemical Vapor Deposition. They were heat treated in different conditions. XTEM, SIMS and high frequency C-V analysis were conducted for characterization. It can be concluded that outdiffusion of phosphours impurity throught the silicide films lead to its depletion in the poly-Si gate region near the gate oxide, resulting in loss of capacitance and increase of effective gate oxide thickness.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.219-219
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• 2009

In this study, electrochemical impedance characteristics of anodic oxide layer formed on titanium ternary alloy surface have been investigated, Titanium oxide layers were grown on Ti-29Nb-xZr(x=3, 5, 7, 10 and 15 wt%) alloy substrates using phosphoric acid electrolytes.

• 전기의세계
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• v.31 no.3
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• pp.218-225
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• 1982

Metal-Oxide-Metal thin film diodes have been fabricated on the glass substrates by conventional vacuum evaporation method, and the electrical properties, primarily current-voltage characteristics of diodes, have been discussed in the light of various conduction theories presented so far. The experimental results were ploted in the different figures according to the assumed theory, and the characteristic coefficients peculior to these theories were estimated from the function dependence of current (I) upon voltage (V), temperature (T) and oxide film thickness (d).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.259-264
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• 2000

Systematic research of metal alkoxide electrophoretic deposition has been developed. The formation mechanism of electrophoretic deposits has been offered. The structure study of dry and heat-treated electrophoretic deposits has been established. The concrete examples of one and bi-component oxide thin film formation were considered. The new approaches for thin film technology have developed on various substrates of different shapes and sizes. The correlation between thin film structure, mechanism of their formation, and physico-chemical properties has been determined.

• Applied Chemistry for Engineering
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• v.21 no.2
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• pp.224-229
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• 2010

Transparent conductive oxide films have been widely used in the field of flat panel display (FPD). Transparent conductive Indium Zinc Oxide (IZO) thin films with excellent chemical stability have attracted much attention as an alternative material for Indium Tin Oxide (ITO) films. In this study, using $In_2O_3$ and ZnO powder mixture with a ratio of 90 : 10 wt% as a target, IZO films are prepared on polynorbornene (PNB) substrates by electron beam evaporation. The effect of thickness and $O_2$ introduction flow rate on the optical, electrical, structural properties and surface composition of deposited IZO films were investigated by UV/Visible spectrophotometer, 4-point probe method, SEM, XRD and XPS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.894-898
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• 2013

Zinc oxide(ZnO) was sputtered on various glass and flexible substrates such as polyethylene terephthalate(PET) and polycarbonate(PC). A Q-switched $Nd:YVO_4$ laser with a wavelength of 1,064 nm was used for the direct etching of ZnO films. It was possible to obtain laser etched line patterns on the ZnO films on PC substrate at some specific laser beam conditions. In the flexible substrates, more thermal energy of laser beam is expected to be spreaded for the etching process.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.179.1-179.1
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• 2015

Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates were investigated in the very thin thickness range of 20 to 120 nm. A very unusual transition phenomenon, in which electrical resistance increases with an increase in film thickness, was observed. From structural and compositional analyses, this transition behavior was explained to arise from metallic Zn agglomerates dispersed in non-crystalline Zn-O matrix. It was unveiled that film thickness more than 80 nm is required for the development of hexagonal crystal structure of ZnO. ZnO films on PET substrates exhibited high optical transmittance and good mechanical flexibility in the thickness range. The results of this study would provide a valuable guideline for the design of ZnO thin films on organic substrates for practical applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.599-602
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• 2008

Growth of well-aligned ZnO nanostructures on various substrates such as GaN, ITO/glass, and sapphire was realized via a simple aqueous solution method at low temperature of $90^{\circ}C$. Morphology of ZnO nanostructures grown on various substrates as function of substrate was studied. It was found that ZnO nanostructures is a strong function of substrate. It was clearly observed that the morphology of ZnO nanostructures could be varied by change of substrate. Morphology, crystallinity, and crystal characteristics were carried out by FE-SEM, synchrotron x-ray scattering measurements, and high-resolution electron microscopy, respectively.

• ETRI Journal
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• v.19 no.1
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• pp.26-35
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• 1997

The substrate effects on solid-phase crystallization of amorphous silicon (a-Si) films deposited by low-pressure chemical vapor deposition (LPCVD) using $Si_2H_6$ gas have been extensively investigated. The a-Si films were prepared on various substrates, such as thermally oxidized Si wafer ($SiO_2$/Si), quartz and LPCVD-oxide, and annealed at 600$^{\circ}C$ in an $N_2$ ambient for crystallization. The crystallization behavior was found to be strongly dependent on the substrate even though all the silicon films were deposited in amorphous phase. It was first observed that crystallization in a-Si films deposited on the $SiO_2$/Si starts from the interface between the a-Si and the substrate, so called interface-interface-induced crystallization, while random nucleation process dominates on the other substrates. The different kinetics and mechanism of solid-phase crystallization is attributed to the structural disorderness of a-Si films, which is strongly affected by the surface roughness of the substrates.