• Title/Summary/Keyword: Oxide reliability

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Enhancement of Wetting Characteristics for Anisotropic Conductive Adhesive with Low Melting Point Solder via Carboxylic Acid-based Novel Reductants (카르복실산계 환원제를 통한 저융점 솔더입자가 포함된 이방성 전도성 접착제의 젖음 특성 향상 연구)

  • Kim, Hyo-Mi;Kim, Joo-Heon
    • Polymer(Korea)
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    • v.34 no.1
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    • pp.52-57
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    • 2010
  • The low viscous epoxy resin(bisphenol F) with carboxylic acid as the reductants was introduced for high performance and reliability in the ACA with a low melting point alloy filler system. The curing characteristics of the epoxy resin and temperature dependant viscosity characteristic of epoxy resin at the melting temperature of LMPA were investigated by dynamic mode of differential scanning calorimetry (DSC) and rheometer, respectively. Based on these thermo-rheological characteristics of epoxy resin and LMPA, the optimum process system was designed. In order to remove the oxide layer on the surface of LMPA particle, three different types of carboxyl acid-based reductant were added to the epoxy resin. The wetting angles were about $18^{\circ}$ for carboxypropyldisilioxane, and $20.3^{\circ}$ for the carboxy-2-methylethylsiloxane, respectively.

EFFECT OF FLASHING AND UPSETTING PARAMETERS ON THE FLASH BUTT WELDING OF HIGH STRENGTH STEEL

  • Kim, Young-Sub;Kang, Moon-Jin
    • Proceedings of the KWS Conference
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    • 2002.10a
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    • pp.384-389
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    • 2002
  • This study was aimed to evaluate the weldability and optimize the welding conditions for flash butt welding of 780MPa grade steel applied to the automotive bumper reinforcement. And then the relationship between the welding conditions and the joint performance relating specifically to coil-joining steel would be established. The effect of welding conditions between flashing and upsetting process was elucidated. Microstructure observation of the joint indicated that the decarburized band was mainly changed with upsetting process. Width of HAZ was also related to the upsetting conditions rather than the flashing conditions. Generally maximum hardness at HAZ was correlated with $C_{eq}$ of steel and the empirical relationship was obtained to estimate the HAZ properties. Tensile elongation at the joint was usually decreased with increasing the initial clamping distance. Investigation of fracture surface after tensile and bending tests reveal that the origin of cracking at the joint was oxide inclusions composed of $SiO_2$, MnO, $Al_2$ $O_3$, and/or FeO. The amount of inclusions was dependent on the composition ratio of Mn/Si in steel. If this ratio was above 4, the amount of inclusions was low and then the resistance to cracking at the joint was enough to maintain the joint performance. It was obtained that the flashing process influenced the conditions for the energy input to establish uniform or non-uniform molten layer, while the upsetting conditions influenced the joint strength. Heat input variable during flashing process was also discussed with the joint properties.

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QSAR Approach for Toxicity Prediction of Chemicals Used in Electronics Industries (전자산업에서 사용하는 화학물질의 독성예측을 위한 QSAR 접근법)

  • Kim, Jiyoung;Choi, Kwangmin;Kim, Kwansick;Kim, Dongil
    • Journal of Environmental Health Sciences
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    • v.40 no.2
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    • pp.105-113
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    • 2014
  • Objectives: It is necessary to apply quantitative structure activity relationship (QSAR) for the various chemicals with insufficient toxicity data that are used in the workplace, based on the precautionary principle. This study aims to find application plan of QSAR software tool for predicting health hazards such as genetic toxicity, and carcinogenicity for some chemicals used in the electronics industries. Methods: Toxicity prediction of 21 chemicals such as 5-aminotetrazole, ethyl lactate, digallium trioxide, etc. used in electronics industries was assessed by Toxicity Prediction by Komputer Assisted Technology (TOPKAT). In order to identify the suitability and reliability of carcinogenicity prediction, 25 chemicals such as 4-aminobiphenyl, ethylene oxide, etc. which are classified as Group 1 carcinogens by the International Agency for Research on Cancer (IARC) were selected. Results: Among 21 chemicals, we obtained prediction results for 5 carcinogens, 8 non-carcinogens and 8 unpredictability chemicals. On the other hand, the carcinogenic potential of 5 carcinogens was found to be low by relevant research testing data and Oncologic TM tool. Seven of the 25 carcinogens (IARC Group 1) were wrongly predicted as non-carcinogens (false negative rate: 36.8%). We confirmed that the prediction error could be improved by combining genetic toxicity information such as mutagenicity. Conclusions: Some compounds, including inorganic chemicals and polymers, were still limited for applying toxicity prediction program. Carcinogenicity prediction may be further improved by conducting cross-validation of various toxicity prediction programs, or application of the theoretical molecular descriptors.

Technology of Flexible Transparent Conductive Electrode for Flexible Electronic Devices (유연전자소자를 위한 차세대 유연 투명전극의 개발 동향)

  • Kim, Joo-Hyun;Chon, Min-Woo;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.2
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    • pp.1-11
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    • 2014
  • Flexible transparent conductive electrodes (TCEs) have recently attracted a great deal of attention owing to rapid advances in flexible electronic devices, such as flexible displays, flexible photovoltanics, and e-papers. As the performance and reliability of flexible electronics are critically affected by the quality of TCE films, it is imperative to develop TCE films with low resistivity and high transparency as well as high flexibility. Indium tin oxide (ITO) has been the most dominant transparent conducting material due to its high optical transparency and electrical conductivity. However, ITO is susceptible to cracking and delamination when it is bent or deformed. Therefore, various types of flexible TCEs, such as carbon nanotube, conducting polymers, graphene, metal mesh, Ag nanowires (NWs), and metal mesh have been extensively investigated. Among several options to replace ITO film, Ag NWs and metal mesh have been suggested as the promising candidate for flexible TCEs. In this paper, we focused on Ag NWs and metal mesh, and summarized the current development status of Ag NWs and metal mesh. The several critical issues such as high contact resistance and haze are discussed, and newly developed technologies to resolve these issues are also presented. In particular, the flexibility and durability of Ag NWs and metal mesh was compared with ITO electrode.

뉴로모픽 시스템용 시냅스 트랜지스터의 최근 연구 동향

  • Nam, Jae-Hyeon;Jang, Hye-Yeon;Kim, Tae-Hyeon;Jo, Byeong-Jin
    • Ceramist
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    • v.21 no.2
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    • pp.4-18
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    • 2018
  • Lastly, neuromorphic computing chip has been extensively studied as the technology that directly mimics efficient calculation algorithm of human brain, enabling a next-generation intelligent hardware system with high speed and low power consumption. Three-terminal based synaptic transistor has relatively low integration density compared to the two-terminal type memristor, while its power consumption can be realized as being so low and its spike plasticity from synapse can be reliably implemented. Also, the strong electrical interaction between two or more synaptic spikes offers the advantage of more precise control of synaptic weights. In this review paper, the results of synaptic transistor mimicking synaptic behavior of the brain are classified according to the channel material, in order of silicon, organic semiconductor, oxide semiconductor, 1D CNT(carbon nanotube) and 2D van der Waals atomic layer present. At the same time, key technologies related to dielectrics and electrolytes introduced to express hysteresis and plasticity are discussed. In addition, we compared the essential electrical characteristics (EPSC, IPSC, PPF, STM, LTM, and STDP) required to implement synaptic transistors in common and the power consumption required for unit synapse operation. Generally, synaptic devices should be integrated with other peripheral circuits such as neurons. Demonstration of this neuromorphic system level needs the linearity of synapse resistance change, the symmetry between potentiation and depression, and multi-level resistance states. Finally, in order to be used as a practical neuromorphic applications, the long-term stability and reliability of the synapse device have to be essentially secured through the retention and the endurance cycling test related to the long-term memory characteristics.

Highly Flexible Touch Screen Panel Fabricated with Silver Nanowire Crossing Electrodes and Transparent Bridges

  • Jeon, Youngeun;Jin, Han Byul;Jung, Sungchul;Go, Heungseok;Lee, Innam;Lee, Choonhyop;Joo, Young Kuil;Park, Kibog
    • Journal of the Optical Society of Korea
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    • v.19 no.5
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    • pp.508-513
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    • 2015
  • A capacitive-type touch screen panel (TSP) composed of silver nanowire (AgNW) crossing electrodes and transparent bridge structures was fabricated on a polycarbonate film. The transparent bridge structure was formed with a stack of Al-doped ZnO (AZO) electrodes and SU-8 insulator. The stable and robust continuity of the bridge electrode over the bridge insulator was achieved by making the side-wall slope of the bridge insulator low and depositing the conformal AZO film with atomic layer deposition. With an extended exposure time of photolithography, the lower part of the SU-8 layer around the region uncovered by the photomask can be exposed enough to the UV light scattered from the substrate. This leads to the low side-wall slope of the bridge insulator. The fabricated TSP sample showed a large capacitance change of 22.71% between with and without touching. Our work supplies the technological clue for ensuring long-term reliability to the highly flexible and transparent TSP made by using conventional fabrication processes.

The Degradation Analysis of Characteristic Parameters by NBTI stress in p-MOS Transistor for High Speed (고속용 p-MOS 트랜지스터에서 NBTI 스트레스에 의한 특성 인자의 열화 분석)

  • Lee, Yong-Jae;Lee, Jong-Hyung;Han, Dae-Hyun
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.35 no.1A
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    • pp.80-86
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    • 2010
  • This work has been measured and analyzed the device degradation of NBTI (Negative Bias Temperature Instability) stress induced the increase of gate-induced-drain-leakage(GIDL) current for p-MOS transistors of gate channel length 0.13 [${\mu}m$]. From the relation between the variation of threshold voltage and subthreshold slop by NBTI stress, it has been found that the dominant mechanism for device degradation is the interface state generation. From the GIDL measurement results, we confined that the EHP generation in interface state due to NBTI stress led to the increase of GIDL current. As a results, one should take care of the increased GIDL current after NBTI stress in the ultra-thin gate oxide device. Also, the simultaneous consideration of reliability characteristics and dc device performance is highly necessary in the stress parameters of nanoscale CMOS communication circuit design.

Catalytic Mechanism for Growth of Carbon Nanotubes under CO-H2 Gas Mixture

  • Chung, Uoo-Chang;Kim, Yong-Hwan;Lee, Deok-Bo;Jeong, Yeon-Uk;Chung, Won-Sub;Cho, Young-Rae;Park, Ik-Min
    • Bulletin of the Korean Chemical Society
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    • v.26 no.1
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    • pp.103-106
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    • 2005
  • In order to investigate the catalytic mechanism for the growth of carbon nanotubes (CNTs), a comprehensive study was conducted using carbon materials synthesized at 680 ${^{\circ}C}$ with a gas mixture of CO-H$_2$ after reduction at 800 ${^{\circ}C}$ by H$_2$ gas from iron oxide, and metal Pt. The resulting material was observed by scanning electron microscopy (SEM) and X-ray diffraction patterns (XRD) after a variety of reaction times. The carbon materials synthesized by metal Pt were little affected by reaction time and the sintered particles did not form CNTs. Xray analysis revealed that metal Fe was completely converted to iron carbide (Fe$_3$C) without Fe peaks in the early stage. After 5 min, iron carbide (Fe$_3$C) and carbon (C) phases were observed at the beginning of CNTs growth. It was found that the intensity of the carbon(C) peak gradually increased with the continuous growth of CNTs as reaction time increases. It was also found that the catalyst of growth of CNTs was metal carbide.

Tungsten oxide interlayer for hole injection in inverted organic light-emitting devices

  • Kim, Yun-Hak;Park, Sun-Mi;Gwon, Sun-Nam;Kim, Jeong-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.380-380
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    • 2010
  • Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

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Development and Evaluation of Portable Multiple Gas Meter (휴대용 다중 가스측정 장비 개발 및 평가)

  • Jang, Hee-Joong;Kim, Eung-Sik;Park, Jong-Yeol
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.20 no.3
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    • pp.483-490
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    • 2019
  • Assessing the effect of forest fires and measuring the gas concentration around a fire has received little attention. Therefore, the concentrations of various gases in areas surrounding a fire need to be measured by the development of a suitable device. Unlike conventional portable devices, the AQS (Air Quality System) proposed in this paper is a portable instrument that measures five types of gases simultaneously, including CO, CO2, NOx, VOCs, and NH3, and has high durability through sensor protection algorithms. A PC-based program with an AQS connection was developed to monitor the real-time changes in the gas concentration. The reliability of the developed device was proven through a comparison of the results with other commercial gas analyzers. Measurements of the concentration due to indoor and outdoor fires were performed around a fire area to review the applicability and the predicted results were obtained.