• Title/Summary/Keyword: Oxide properties

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Epitaxial growth of Tin Oxide thin films deposited by powder sputtering method

  • Baek, Eun-Ha;Kim, So-Jin;Gang, Hyeon-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.185.2-185.2
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    • 2015
  • Tin Oxide (SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. In addition, it would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. There have been concentrated on the improvement of optical properties, such as conductivity and transparency, by doping Indium Oxide and Gallium Oxide. Recently, with development of fabrication techniques, high-qulaity SnO2 epitaxial thin films have been studied and received much attention to produce the electronic devices such as sensor and light-emitting diode. In this study, powder sputtering method was employed to deposit epitaxial thin films on sapphire (0001) substrates. A commercial SnO2 powder was sputtered. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using XRD, SEM, AFM, and Raman spectroscopy measurements. The details of physical properties of epitaxial SnO2 thin films will be presented.

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Mechanically Flexible and Transparent Zinc Oxide Thin Film Transistor on Plastic Substrates (Plastic 기판 상의 투명성과 유연성을 지닌 Zinc Oxide 박막 트랜지스터)

  • Park, Kyung-Yea;Ahn, Jong-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.10-10
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    • 2009
  • We have fabricated transparent and flexible thin film transistor(TFT) on polyethylene terephthalate(PET) substrate using Zinc Oxide (ZnO) and Indium Tin Oxide (ITO) film as active layer and electrode. The transfer printing method was used for printing the device layer on target plastic substrate at room temperature. This approach have an advantage to separate the high temperature annealing process to improve the electrical properties of ZnO TFT from the device process on plastic substrate. The resulting devices on plastic substrate presented mechanical and electrical properties similar with those on rigid substrate.

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CMP Properties of Oxide Film with Various Pad Conditioning Temperatures (CMP 패드 컨디셔닝 온도에 따른 산화막의 연마특성)

  • Choi, Gwon-Woo;Kim, Nam-Hoon;Seo, Yong-Jin;Lee, Woo-Sun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.4
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    • pp.297-302
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    • 2005
  • Chemical mechanical polishing(CMP) performances can be optimized by several process parameters such as equipment and consumables (pad, backing film and slurry). Pad properties are important in determining removal rate and planarization ability of a CMP process. It is investigated the performance of oxide CMP process using commercial silica slurry after the pad conditioning temperature was varied. Conditioning process with the high temperature made the slurry be unrestricted to flow and be hold, which made the removal rate of oxide film increase. The pad became softer and flexible as the conditioning temperature increases. Then the softer pad provided the better surface planarity of oxide film without defect.

The Effect of Annealing Treament with Aluminum Oxide as Medium Layer and Platinum Heater (매개층 알루미늄산화막과 백금 발열체의 열처리 효과)

  • 노상수;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.314-317
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    • 1997
  • The electrical and physical characteristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering respectively, were analyzed with increasing annealing temperature(400~80$0^{\circ}C$) by four point probe, SEM and XRD. Under $600^{\circ}C$ of annealing temperature, aluminum oxide had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin films was improved. But these properties of aluminum oxide and Pt thin films on it were degraded over $700^{\circ}C$ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. In the analysis of the thermal charateristics of Pt micro-heater fabricated on Si07/si substrate, the temperature of Pt micro-heater is up to 41$0^{\circ}C$ with the power dissipation 1.8 watts.

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Crystallinity and Battery Properties of Lithium Manganese Oxide Spinel with Lithium Titanium Oxide Spinel Coating Layer on Its Surface

  • Ji, Mi-Jung;Kim, Eun-Kyung;Ahn, Yong-Tae;Choi, Byung-Hyun
    • Journal of the Korean Ceramic Society
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    • v.47 no.6
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    • pp.633-637
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    • 2010
  • In this study, lithium manganese oxide spinel ($LiMn_{1.9}Fe_{0.1}Nb_{0.0005}O_4$) as a cathode material of lithium ion secondary batteries is synthesized with spray drying, and in order to increase its crystallinity and electrochemical properties, the granulated $LiMn_{1.9}Fe_{0.1}Nb_{0.0005}O_4$ particle surface is coated with lithium titanium oxide spinel ($Li_4Ti_5O_{12}$) through a sol-gel method. The granulated particles present a higher tap density and lower specific surface area. The crystallinity and discharge capacity of the $Li_4Ti_5O_{12}$ coated material is relatively higher than uncoated material. With the coating layer, the discharge capacity and cycling stability are increased and the capacity fading is suppressed successfully.

Collodial Properties and Acid Consuming Capacity of Hydrous Aluminum Oxide Suspension (제산제 알루미나수화물의 콜로이드성과 제산능)

  • 이계주;이기명
    • YAKHAK HOEJI
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    • v.35 no.4
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    • pp.277-282
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    • 1991
  • Rheological, colloidal and micromeritical properties were followed to investigate aging mechanisms of hydrous aluminum oxide suspension using Zeta-meter systems, BET adsorption apparatus, Master sizer and electronmicroscope. The results indicate that hydrous aluminum oxide suspension revealed plastic flow with thixotropy. The viscosity, thixotropy and yield value were increased with increasing concentration. During aging process, the viscosity and thixotropic index were increased by an addition of glycerin, however, sorbitol stabilized aging process of the suspension being accompanied with growth of particle size and reduction in specific surface area, pore area and pore volume, and consistency. Diminution of adsorptive power of the particles was also protected by addition of sorbitol to hydrous aluminum oxide suspension. From these results, one of aging mechanism of hydrous aluminum oxide suspension assumed growth and/or crystallization of colloidal particles in aqueous suspension.

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Deposition Behaviors and Electrical Properties of Sb-doped $SnO_2$ Films by Plasma Enhanced Chemical Vapor Deposition (PECVD법에 의해 제조된 Sb-doped $SnO_2$ 박막의 증착거동 및 전기적 특성)

  • 김근수;서지윤;이희영;김광호
    • Journal of the Korean Ceramic Society
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    • v.37 no.2
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    • pp.194-200
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    • 2000
  • Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.

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Transparent Conducting Zinc-Tin-Oxide Layer for Application to Blue Light Emitting-diode

  • Kim, Do-Hyeon;Kim, Gi-Yong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.346.2-346.2
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    • 2014
  • To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

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Effect of pH of Precipitation on Physical and Chemical Properties of Hydrous Aluninum Oxide (알루미나수화물(水和物)의 침전(沈澱)pH가 물성(物性)에 미치는 영향(影響))

  • Rhee, Gye-Ju
    • Journal of Pharmaceutical Investigation
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    • v.6 no.2
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    • pp.95-100
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    • 1976
  • A study on the effect of the pH of precipitation on the acid consuming capacity, aging stability, physical and chemical properties of hydrous aluminum oxide prepared by the reaction of aluminum chloride and ammonium hydroxide solution was carried out by means of X-ray diffraction, IR spectra and differential thermal analysis. The results from these experiments are as follows: 1. Hydrous aluminum oxide precipitated at lower pH showed better acid consuming capacity, higher stability and more anion contained in the structure than that prepared at higher pH. 2. The hydrous aluminum oxide prepared at lower pH is amorphous and that prepared at higher pH is crystalline hydrated hydrous aluminum oxide, i.e., Bayerite and these results are conformed to Rhee's hypothesis. 3. The rate of loss of reactivity and the end-point reactivity are related to the pH of precipitation.

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Investigation of the Growth Kinetics of Al Oxide Film in Sulfuric Acid Solution (황산 용액에서 Al 산화피막의 생성과정 연구)

  • Chon, Jung-Kyoon;Kim, Youn-Kyoo
    • Journal of the Korean Chemical Society
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    • v.54 no.4
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    • pp.380-386
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    • 2010
  • We have investigated the growth kinetics of Al oxide film by anodization in sulfuric acid solution and the electronic properties of this film using electrochemical impedance spectroscopy. Al oxide film consisted $Al_2O_3$ was grown based on the point defect model and shown the eclctronic properties of n-type semiconductor.