• Transactions on Electrical and Electronic Materials
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• 제17권1호
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• pp.33-36
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• 2016

In the present work, a Ni-doped indium zinc oxide (NIZO) film and its multilayers with Ag layers were investigated as transparent conducting electrodes for liquid crystal display (LCD) applications, as a substitute for indium tin oxide (ITO) electrodes. By interposing the Ag layer between the NIZO layers, the loss of the optical transmittance occurred; however, the Ag layer brought enhancement of electrical sheet resistance to the NIZO/Ag/NIZO multilayer electrode. The twisted nematic cell based on the NIZO/Ag/NIZO multilayer electrode exhibited superior electro-optical characteristics than those based on single NIZO electrode and was competitive compared to those based on the conventional ITO electrode. An LCD-based NIZO/Ag/NIZO multilayer electrode may allow new approaches to conventional ITO electrodes in display technology.

• 한국세라믹학회지
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• 제49권6호
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• pp.498-504
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• 2012

Oxide layers were prepared by an environmentally friendly plasma electrolytic oxidation (PEO) process on an Al-1050 substrate. The electrolyte for PEO was an alkali-based solution with $Na_2SiO_3$ (8 g/L) and NaOH (3 g/L). The influence of the electrical parameters on the phase composition, microstructure and properties of the oxide layers formed by PEO were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The voltage-time responses were recorded during various PEO processes. The oxides are composed of two layers and are mainly made of ${\alpha}$-alumina, ${\gamma}$-alumina and mullite phases. The proportion of each phase depends on various electrical parameters. It was found that the surface of the oxides produced at a higher current density and Ia/Ic ratio shows a more homogeneous morphology than those produced with the electrical parameters of a lower current density and lower Ia/Ic ratio. Also, the oxide layers formed at a higher current density and higher Ia/Ic ratio show high micro-hardness levels.

• 한국재료학회지
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• 제13권3호
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• pp.160-168
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• 2003

The co-firing processes for the supported type planar solid oxide fuel cell were investigated. A flat cell of $7.7${\times}$10.8\textrm{cm}^2$ was fabricated successfully by the co-firing process, in which green films were co-sintered in the forms of two layers of anode/electrolyte or of three layers of anode/electrolyte/cathode with gas distributor. A co-fired cell of two layers yielded a power of 200 ㎽/$\textrm{cm}^2$ at 608 ㎷. Its performance loss was mainly due to iR drop in the anodic gas distributor, which was attributed to poor contact between anodic gas distributor and current collector. The performance in the co-fired cell of three layers was much lower than that of two layers, which resulted from the large iR drop and activation overvoltage at the cathodic side. In the co-fired cell of two layers, the impedance analysis indicated that the performance decay during cell operation is due to both anode overvoltage and iR drop at anode side. Also the electrode reaction of the co-fired two layers' cell is considered to be controlled by activation overvoltage within the low current of 50 ㎃.

• 한국표면공학회지
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• 제41권1호
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• pp.16-22
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• 2008

Anodizing to form oxide layers on the pure titanium was performed in the electrolyte containing 1.5M $H_2SO_4$, 0.2M $H_3PO_4$, and 2.5wt.% $CuSO_4$ using the ac-biased arc anodizing technique. Titanium oxide layers anodized with different applied voltages, voltage-elevating rates, and anodizing times were investigated. In addition, thermal oxidation test under an atmospheric environment for the arc-anodized specimens was carried out. The thickness of oxide layers were not affected by the voltage-elevating rates, but increased slightly with the increase of anodizing times. The thickness of oxide layers were increased with the increase of voltages, and increased remarkably in the condition of 200V. The size and number of the pore observed in the center of the porous cell were decreased with increase of applied voltage. From the result of thermal oxidation test, it revealed that oxide layer formed by arc anodizing more effective to prevent oxidation of pure titanium.

• 한국재료학회지
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• 제11권4호
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• pp.329-334
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• 2001

붕산용액에서 양극산화법으로 장벽형 산화피막을 형성시킨 후 미세조직을 관찰하였다. 양극산화시 인가되는 전압에 따른 피막의 성장속도는 1.54nm/v의 직선적인 관계를 나타냈으며 300v의 인가전압에서 생성된 산화피막의 조직은 50$0^{\circ}C$에서 열처리하였을 경우 피막의 상 전이가 일어나지 않았으나 높은 인가전압에서 생성된 산화피막의 경우는 피막의 조직이 비정질에서 ${\gamma}$-alumina로 변태되는 것이 관찰되었다. 또한 피막이 전자빔 조사에 의해서도 ${\gamma}$-alumina로 전이가 일어났다.

• Bulletin of the Korean Chemical Society
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• 제30권11호
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• pp.2577-2583
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• 2009

Presented are the formation of iron oxide layers on evaporator tubes in an actual fossil power plant operated under all volatile treatment (AVT) condition and an experimental simulation of iron oxide formation in the presence of ferrous and ferric ions. After actual operations for 12781 and 36326 hr in the power plant, two iron oxide layers of magnetite on the evaporator tubes were found: a continuous inner layer and a porous outer layer. The experimental simulation (i.e., artificial corrosion in the presence of ferrous and ferric ions at 100 ppm level for 100 hr) reveals that ferrous ions turn the continuous inner oxide layer on tube metal to cracks and pores, while ferric ions facilitate the production of porous outer oxide layer consisting of large crystallites. Based on a comparison of the oxide layers produced in the experimental simulation with those observed on the actually used tubes, we propose possible routes for oxid layer formation schematically. In addition, the limits of the proposed corrosion routes are discussed in detail.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.316-316
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• 2014

Two different transparent conducting oxide (TCO) layers of Al-doped ZnO (AZO) and $WO_3$ were prepared by a rf sputtering process. Working pressure, deposition time, and target-to-substrate distance were varied for the sputtering process to improve electrical properties of the resulting layer. Thickness of the TCO layers was measured by a profile meter of ${\alpha}$-step. To evaluate the electrical conductivity, surface resistivity of the TCO layers was measured by a four-point probe technique. Decrease of the working pressure resulted in increase of deposition rate and decrease of surface resistivity of the resulting layer. Increase of the layer thickness due to increased deposition time resulted in decrease of surface resistivity of the resulting layer. The shorter the target-to-substrate distance was, the lower was the surface resistivity of the resulting layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.264-264
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• 2013

Strong metal-support interaction effect is an important issue in determining the catalytic ac-tivity for heterogeneous catalysis. In this study, we investigated the support effect and the role of organic capping layers of two-dimensional Pt nanocatalysts on reducible metal oxide supports under the CO oxidation. Several reducible metal oxide supports including CeO2, Nb2O5, and TiO2 thin films were prepared via sol-gel techniques. The structure, chemical state and optical property were characterized using XRD, XPS, TEM, SEM, and UV-VIS spectrometer. We found that the reducible metal oxide supports have a homogeneous thin thickness and crystalline structure after annealing at high temperature showing the different optical band gap energy. Langmuir-Blodgett technique and arc plasma deposition process were employed to ob-tain Pt nanoparticle arrays with capping and without capping layers, respectively on the oxide support to assess the role of the supports and capping layers on the catalytic activity of Pt catalysts under the CO oxidation. The catalytic performance of CO oxidation over Pt supported on metal oxide thin films under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) was tested. The results show that the catalytic activity significantly depends on the metal oxide support and organic capping layers of Pt nanoparticles, revealing the strong metal-support interaction on these nanocatalysts systems.

• 한국위성정보통신학회논문지
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• 제10권2호
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• pp.90-94
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• 2015

본 연구에서는 Solution Process를 적용한 Strontium Oxide를 배향막으로 사용한 경우의 액정배향 특성에 대해서 연구하였다. Stronium Oxide 는 High K 물질로 배향막으로 사용할 경우 임계치 전압을 효율적으로 조절할 수 있는 장점이 있으나, 액정분자와의 배향에 관한 상호관계에 대해서는 많은 연구가 진행되지 않았었다. 0.1~0.4 Mol 롤 농도를 조절한 Strontium Oxide를 Solution Process 로 배향막으로서 제조함으로써, 보다 생산성이 좋은 방법을 제시할 수 있었으며, 재료가 갖는 우수한 특성을 반영한 액정디스플레이의 제조가 가능하였다. 샘플 측정결과 1.447~1.613V 의 임계치 전압특성을 보여주어 기존의 방법으로 제조된 액정디스플레 이와 동등 혹은 우월한 특성을 갖고 있음을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.53-53
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• 2009

Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were used as engineered tunneling barriers. The VARIOT type tunneling barrier composed of oxide-nitride-oxide (ONO) layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase of interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress.