• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.222-225
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• 2010

The preparation of tin oxide thin films by atomic layer deposition (ALD), using a tetrakis (ethylmethylamino) tin precursor, and the effects of a seed layer on film growth were examined. The average growth rate of tin oxide films was approximately 1.2 to 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreased at the substrate temperature at $200^{\circ}C$. A seed effect was not observed in the crystal growth of tin oxide. However, crystallinity and the growth of seed material were detected by XPS after thermal annealing. ALD-grown seeded tin oxide thin films, as-deposited and after thermal annealing, were characterized by X-ray diffraction, atomic force microscopy and XPS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.735-738
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• 2000

This paper shows experimentally that oxide layer on the p-type Si-substrate can grow at low temperature(500$^{\circ}C$∼600$^{\circ}C$) using high pressure water vapor system. As the result of experiment, oxide layer growth rate is about 0.19${\AA}$/min at 500$^{\circ}C$, 0.43${\AA}$/min at 550$^{\circ}C$, 1.2${\AA}$/min at 600$^{\circ}C$ respectively. So, we know oxide layer growth follows reaction-controlled mechanism in given temperature range. Consequently, granting that oxide layer growth rate increases linearly to temperature over 600$^{\circ}C$, we can expect oxide growth rate is 5.2${\AA}$/min at 1000$^{\circ}C$. High pressure oxidation of silicon is particularly attractive for the thick oxidation of power MOSFET, because thermal oxide layers can grow at relatively low temperature in run times comparable to typical high-temperature, 1 atm conditions. For higher-temperature, high-pressure oxidation, the oxidation time is reduced significantly

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.128-128
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• 2009

The effect of seed layer on the preparation of tin oxide thin film by ALD using tetrakis(ethylmethylamino) tin precursor was examined. The average growth rate of tin oxide film is about 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreases at the substrate temperature at $200^{\circ}C$. The seed effect was not observed in crystal growth of thin oxide. However, the crystalline growth of seed material in tin oxide was detected by thermal annealing. ALD-grown seeded tin oxide thin film after thermal annealed was characterized by ellipsometry, XRD, AFM and XPS.

• Journal of Surface Science and Engineering
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• v.27 no.2
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• pp.83-90
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• 1994

We have investigated the mechanism for the abnormal oxide growth occuring during oxidation of the crystalline tungsten silicide. TEM and XPS analysis reveal the abnormaly grown oxide layer consisting of crystalline $Wo_3$ and amorphous $SiO_2$. The presence of crystalline $Wo_3$ provides a rapid diffusion of oxygen through the oxide layer. The abnormal oxide growth is mainly due to the poor quality of initial oxide layer growth on tungsten silicide. Two species such as tungsten and silicon from decomposition fo tungsten silicide as well as silicon supplied from the underlying polysilicon are the main contributors sto abnormal oxide forma-tion. Consequently, the abnormal oxidation results in the disintegration of tungsten silicide and thinning of polysilicon as well.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.459-460
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• 2008

Zinc oxide micro rods were fabricated using as chemical bath deposition ok photolithography. Vertically aligned Zinc Oxide rod array as grown by chemical bath deposition method on Zinc Oxide template layer. The ZnO template layer was deposited on glass and the pattering was made by standard photolithography technique. The selective growth of ZnO micro rods were achieved with the masked ZnO template layer substrate. The fabricated ZnO micro rods were found to be single crystalline and have grown along hexagonal c-axis direction of (0002) which is same as the preferred growth orientation of ZnO template layer. The ZnO micro-rod array structure was implemented as a window layer in Cu(InGa)Se2 solar cell and its effect on photovoltaic efficiency was examined.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.151-157
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• 2014

The degradation mechanisms of thermal barrier coatings (TBCs) were investigated in different thermal fatigue condition in terms of microstructural analyses. The isothermal and cyclic oxidation tests were conducted to atmospheric plasma sprayed-TBCs on NIMONIC 263 substrates. The delamination occurred by the oxide layer formation at the interface, the Ni/Cr-based oxide was formed after Al-based oxide layer grew up to ${\sim}10{\mu}m$ in the isothermal condition. In the cyclic oxidation with dwell time, the failure occurred earlier (500 hr) than in the isothermal oxidation (900 hr) at same temperature. The thickness of Al-based oxide layer of the delaminated specimen in the cyclic condition was ${\sim}4{\mu}m$ and the interfacial cracks were observed. The acoustic emission method revealed that the cracks generated during the cooling step. It was considered that the specimens were prevented from the formation of the Al-based oxide by cooling treatment, and the degradation mode in the cyclic test was dominantly interfacial cracking by the difference of thermal expansion coefficients of the coating layers.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.65-69
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• 2002

An Al film deposited on the Kovar alloy substrate was anodically-bonded to the borosilicate glass, and the bond interfaces was closely investigated by transmission electron microscopy. Al oxide was found to form a layer ~l0 nm thick at the bond interface, and fibrous structure of the same oxide was found to grow epitaxially in the glass from the oxide layer. The fibrous structure grew with the bonding time. The mechanism of the formation of this fibrous structure is proposed on the basis of the migration of Al ions under the electric field. Penetration of Al into glass beyond the interfacial Al oxide was not detected. The comparison of the amount of excess oxygen ions generated in the alkali depletion layer with that incorporated in the Al oxide suggests that the growth of the alkali-ion depletion layer is controlled by the consumption of excess oxygen to form the interfacial Al oxide.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.8
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• pp.692-697
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• 2016

This study investigated the effect of surface roughness of zinc oxide (ZnO) layer on the growth of polycrystalline Si layer via an Al-induced layer exchange process. It was found that the growth rate, grain size, crystallization fraction, and preferential orientation of the polycrystalline Si layer were strongly influenced by the surface roughness of the underlying ZnO layer. As the roughness of the ZnO surface increased, a higher growth rate (~40 min) and preferential Si (100) orientation were obtained because of the spatial concentration fluctuations in the Al-Si alloy, induced by the surface roughness of the underlying ZnO layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.203.1-203.1
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• 2013

Zinc oxide (ZnO) nanocrystalline thin films on various growth temperatures for active layer and different buffer layer thickness were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si substrates. The ZnO active layer were grown with various growth temperature from 500 to $800^{\circ}C$ and the ZnO buffer layer were grown for different time from 5 to 40 minutes. To investigate the structural and optical properties of the ZnO thin films, scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescence (PL) spectroscopy were used, respectively. In the SEM images, the ZnO thin films have high densification of grains and good roughness and uniformity at $800^{\circ}C$ for active layer growth temperature and 20 minutes for buffer layer growth time, respectively. The PL spectra of ZnO buffer layers and active layers display sharp near band edge (NBE) emissions in UV range and broad deep level emissions (DLE) in visible range. The intensity of NBE peaks for the ZnO thin films significantly increase with increase in the active layer growth temperature. In addition, the NBE peak at 20 minutes for buffer layer growth time has the largest emission intensity and the intensity of DLE peaks decrease with increase in the growth time.