• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• 방사선산업학회지
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• 제8권3호
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• pp.141-146
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• 2014

Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a $^{63}Ni$ plating condition on the PN junction semiconductor needed for production of beta-voltaic battery. PN junction semiconductors with a Ni seed layer of 500 and $1000{\AA}$ were coated with Ni at current density from 10 to $50mA\;cm^{-2}$. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased. The results showed that the optimum surface shape was obtained at a current density of $10mA\;cm^{-2}$ in seed layer with thickness of $500{\AA}$, $20mA\;cm^{-2}$ of $1000{\AA}$. Also, pure Ni deposit was well coated on a PN junction semiconductor without any oxide forms. Using the line width of (111) in XRD peak, the average grain size of the Ni thick firm was measured. The results showed that the average grain size was increased as the thickness of seed layer was increased.

• Journal of Magnetics
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• 제10권3호
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• pp.95-98
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• 2005

We report hole-induced ferromagnetism in diluted magnetic semiconductor $Zn_{0.99}Mn_{0.01}$ films grown on $SiO_2/Si$ substrates by reactive sputtering. The p-type conduction with hole concentration over $10^{18}\;cm^{-3}$ is achieved by P doping followed by rapid thermal annealing at $800^{\circ}C$ in a $N_2$ atmosphere. The p-type $Zn_{0.99}Mn_{0.01}O:P$ is carefully examined by x-ray diffraction and transmission electron microscopy. The magnetic measurements for $p-Zn_{0.99}Mn_{0.01}O:P$ clearly reveal ferromagnetic characteristics with a Curie temperature above room temperature, whereas those for $n-Zn_{0.99}Mn_{0.01}O:P$ show paramagnetic behavior. The anomalous Hall effect at room temperature is observed for the p-type film. This result strongly supports hole-induced room temperature ferromagnetism in $p-Zn_{0.99}Mn_{0.01}O:P$.

• 한국자기학회지
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• 제25권5호
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• pp.144-148
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• 2015

스피넬 결정구조를 지니는 $CoMn_2O_4$ 박막을 증착하였으며 이들 박막의 물리적 특성을 후열처리 이전과 이후로 비교 조사하였다. 증착온도인 $720^{\circ}C$보다 낮은 $700^{\circ}C$에서의 후열처리 과정 이후, 열처리 이전의 불분명했던 tetragonal 결정구조가 분명하여졌으며 이는 곧 표면상태의 변화로도 관측되었다. 자성특성의 경우 약 100 K에서 다결정 형태의 벌크에서는 측정할 수 없었던 상전이가 관측되었다. 상전이온도 이상의 온도에서는 전형적인 강자성 특성을 보이는 반면 상전이온도 이하에서는 페리자성 특성을 보였다. 특히 열처리 이후에는 페리자성 특성은 매우 뚜렷하여졌다. 이와 같은 결과는 후열처리과정이 $CoMn_2O_4$ 박막의 물리적 특성을 결정짓는데 필수적임을 의미한다.

• 한국재료학회지
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• 제29권1호
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• pp.11-15
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• 2019

Severe wall thinning is found on the tube of a low-pressure evaporator(LPEVA) module that is used for a heat recovery steam generator(HRSG) of a district heating system. Since wall thinning can lead to sudden failure or accidents that lead to shutdown of the operation, it is very important to investigate the main mechanism of the wall thinning. In this study, corrosion analysis associated with a typical flow-accelerated corrosion(FAC) is performed using the corroded tube connected to an upper header of the LPEVA. To investigate factors triggering the FAC, the morphology, composition, and phase of the corroded product of the tube are examined using optical microscopy, scanning electron microscopy combined with energy dispersive spectroscopy, and x-ray diffraction. The results show that the thinnest part of the tube is in the region where gas directly contacts, revealing the typical orange peel type of morphology frequently found in the FAC. The discovery of oxide scales containing phosphate indicates that phosphate corrosion is the main mechanism that weakens the stability of the protective magnetite film and the FAC accelerates the corrosion by generating the orange peel type of morphology.

• 대한치과교정학회지
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• 제51권4호
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• pp.270-281
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• 2021

Objective: The aim of this in vitro study was to evaluate the changes in friction between orthodontic brackets and archwires coated with aluminum oxide (Al₂O₃), titanium nitride (TiN), or chromium nitride (CrN). In addition, the resistance of the coatings to intraoral conditions was evaluated. Methods: Stainless steel canine brackets, 0.016-inch round nickel-titanium archwires, and 0.019 × 0.025-inch stainless steel archwires were coated with Al₂O₃, TiN, and CrN using radio frequency magnetron sputtering. The coated materials were examined using scanning electron microscopy, an X-ray diffractometer, atomic force microscopy, and surface profilometry. In addition, the samples were subjected to thermal cycling and in vitro brushing tests, and the effects of the simulated intraoral conditions on the coating structure were evaluated. Results: Coating of the metal bracket as well as nickel-titanium archwire with Al₂O₃ reduced the coefficients of friction (CoFs) for the bracket-archwire combination (p < 0.01). When the bracket and stainless steel archwire were coated with Al₂O₃ and TiN, the CoFs were significantly lower (0.207 and 0.372, respectively) than that recorded when this bracket-archwire combination was left uncoated (0.552; p < 0.01). The friction, thermal, and brushing tests did not deteriorate the overall quality of the Al₂O₃ coatings; however, some small areas of peeling were evident for the TiN coatings, whereas comparatively larger areas of peeling were observed for the CrN coatings. Conclusions: Our findings suggest that the CoFs for metal bracket-archwire combinations used in orthodontic treatment can be decreased by coating with Al₂O₃ and TiN thin films.

• 한국재료학회지
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• 제31권1호
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• pp.38-42
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• 2021

In this study, high temperature wetting analysis and AZ80/Ti interfacial structure observation are performed for the mixture of AZ80 and Ti, and the effect of Al on wetting in Mg alloy is examined. Both molten AZ80 and pure Mg have excellent wettability because the wet angle between molten droplets and the Ti substrate is about 10° from initial contact. Wetting angle decreases with time, and wetting phenomenon continues between droplets and substrate; the change in wetting angle does not show a significant difference when comparing AZ80-Ti and Mg-Ti. As a result of XRD of the lower surface of the AZ80-Ti sample, in addition to the Ti peak of the substrate, the peak of TiAl3, which is a Ti-Al intermetallic compound, is confirmed, and TiAl3 is generated in the Al enrichment region of the Ti substrate surface. EDS analysis is performed on the droplet tip portion of the sample section in which pure Mg droplets are dropped on the Ti substrate. Concentration of oxygen by the natural oxide film is not confirmed on the Ti surface, but oxygen is distributed at the tip of the droplet on the Mg side. Molten AZ80 and Ti-based compound phases are produced by thickening of Al in the vicinity of Ti after wetting is completed, and Al in the Mg alloy does not affect the wetting. The driving force of wetting progression is a thermite reaction that occurs between Mg and TiO2, and then Al in AZ80 thickens on the Ti substrate interface to form an intermetallic compound.

• 대한금속재료학회지
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• 제46권4호
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• pp.249-256
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• 2008

0.5 wt% Al doped ZnO thin films (AZO) were prepared on glass substrates using RF magnetron sputtering method. Thin films were grown at substrate temperature of $250^{\circ}C$, RF power of 75W, working pressure of 10 mTorr, by changing the $O_2/Ar$ pressure ratio from 0% to 16.7%. The effects of oxygen partial pressure during the deposition process on structural and optical properties of the films were investigated using XRD, SEM, AFM, EPMA and UV-visible spectroscopy. All the AZO thin films were grown as hexagonal wurtzite phase with the c-axis preferred out-of-plane orientation. The surface roughness and grain size of AZO films decreased with increasing oxygen ratio from 10.6 nm to 3.2 nm and 94.9 nm to 30.9 nm, respectively. On the other hand, the transmittance and band gap energy of the AZO films increased from 84.7% to 92.6% and 3.24 eV to 3.28 eV, respectively with increasing the $O_2/Ar$ pressure ratio.

• Korean Journal of Chemical Engineering
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• 제35권11호
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• pp.2256-2268
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• 2018

Hydrophilic and hydrophobic polyethersulfone (PES)-zinc oxide (ZnO) sublayers were prepared by loading of ZnO nanoparticles into PES matrix. Both porosity and hydrophilicity of the hydrophilic sublayer were increased upon addition of hydrophilic ZnO, while these were decreased for the hydrophobic sublayer. In addition, the results demonstrated that the hydrophilic membrane exhibited smaller structural parameter (S value or S parameter or S), which is beneficial for improving pure water permeability and decreasing mass transfer resistance. In contrast, a higher S parameter was obtained for the hydrophobic membrane. With a 2 M NaCl as DS and DI water as FS, the pure water flux of hydrophilic TFN0.5 membrane was increased from $21.02L/m^2h$ to $30.06L/m^2h$ and decreased for hydrophobic TFN0.5 membrane to $14.98L/m^2h$, while the salt flux of hydrophilic membrane increased from $10.12g/m^2h$ to $17.31g/m^2h$ and decreased for hydrophobic TFN0.5 membrane to $3.12g/m^2h$. The increment in pure water permeability can be ascribed to reduction in S parameter, which resulted in reduced internal concentration polarization (ICP). The current study provides a feasible and low cost procedure to decrease the ICP in FO processes.