• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.155-155
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• 2014

The oxide film was formed in hydrogen induced cracking (HIC) environment by potentio-dynamic method. Corrosion potentials and rates of the X-65 and X-80 line pipe steels were -0.3495 $V_{SHE}$, $2.833{\times}10^{-3}A/cm^2$ and 0.2716 $V_{SHE}$ and $2.533{\times}10^{-3}A/cm^2$, respectively. Surface composition analysis of the oxide film contained sulfur. Thermodynamic analysis of the HIC solution chemistry suggested that the oxide phase consisted of iron sulfate. Dynamic nano-indentation method applied to determine nano-hardnesses of the oxide film and base metal hardness.

• Journal of the Semiconductor & Display Technology
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• v.11 no.4
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• pp.1-6
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• 2012

Keeping the polarization direction of the projection light unchanged is of crucial importance for high quality of images on a double-screen 3D projection display system. It has been found that the deposition of oxide layers on the surfaces of scattering polarizer film results in an improvement of polarization maintenance property of the film. The secondary image formed on the front screen by the light scattered from the rear screen decreases by 30% through the application of oxide layers on both surfaces of the screen. Since the oxide layer can also be used as an anti-reflection (AR) coating of the film, this method is very effective for the projection display applications.

• Journal of information and communication convergence engineering
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• v.8 no.4
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• pp.453-456
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• 2010

Tantalum oxide ($Ta_2O_5$) films are of considerable interest for a range of application, including optical waveguide devices, high temperature resistors, and oxygen sensors. In this paper, we establish an anode oxidation process of tantalum thin film. The voltage drop in the electrolyte is affected not in voltage change but in current change. If the voltage drop in the electrolyte is same with cathode oxidation voltage, the current changes logarithmically in proportion to the voltage drop in interface of tantalum oxide and electrolyte. As a result of the measurement on the electrical property of tantalum oxide thin film, when the thickness of the insulator film is $1500{\AA}$, the breakdown voltage is 350volts and dielectric constant is 29.

• Journal of the Korean Ceramic Society
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• v.12 no.1
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• pp.5-11
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• 1975

Thick film resistor paste was made utilizing oxide materials such as SnO, SnO＋Sb2O3, and SnO＋Zn. The oxide materials were mixed respectively with Q-12 glass powder and finally suspended in ethyl cellulose dissolved in ethyl cellosolve. Thick film resistor was made by screen printing the paste on the alumina substrate and firing it at a suitable temperature. Among thick films made from the resistor paste, the thick film containing 85% SnO and fired at $600^{\circ}C$ demonstrated the finest electrical properties showing 10 K ohm in sheet resistance, 110 ppm/$^{\circ}C$ in TCR. In general, TCR of the thick films made from the oxide-mixture paste is good in linearity, therefore it is suggested the oxide-mixture paste is utilized as the negative thermistor.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.147-154
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• 2017

This research was conducted to investigate the electrochemical properties of the thin air-formed oxide film-covered AZ31 Mg alloy. Native air-formed oxide films on AZ31 Mg alloy samples were prepared by knife-abrading method and the changes in the electrochemical properties of the air-formed oxide film were investigated in seven different electrolytes containing the following anions $Cl^-$, $F^-$, $SO{_4}^{2-}$, $NO_3{^-}$, $CH_3COO^-$, $CO{_3}^{2-}$, and $PO{_4}^{3-}$. It was observed from open circuit potential (OCP) transients that the potential initially decreased before gradually increasing again in the solutions containing only $CO{_3}^{2-}$ or $PO{_4}^{3-}$ ions, indicating the dissolution or transformation of the native air-formed oxide film into new more protective surface films. The Nyquist plots obtained from electrochemical impedance spectroscopy (EIS) showed that there was growth of new surface films with immersion time on the air-formed oxide film-covered specimens in all the electrolyte. The least resistive surface films were formed in fluoride and sulphate baths whereas the most protective film was formed in phosphate bath. The potentiodynamic polarization curves illustrated that passive behaviour of AZ31 Mg alloy under anodic polarization appears only in $CO{_3}^{2-}$, or $PO{_4}^{3-}$ ions containing solutions and at more than $-0.4V_{Ag/AgCl}$ in $F^-$ ion containing solution.

• Tribology and Lubricants
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• v.2 no.1
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• pp.53-60
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• 1986

The methods to prevent or suppress the initial failure of the sliding surfaces by the formation of the protection film during the manufacturing process were studied. Now it has been known that the surface protection film which was formed during the running-in process is mainly $Fe_3O_4$ and its film was formed only at the limited oxygen ability during the lubricated sliding. So it was tried to form the same oxide film before the sliding by heat treatment at 300$\circ$C with the wetted specimen by oil. The results show that a thin oxide film ($Fe_3O_4$) was formed on the surface beneath the solid oil film and the specimen with this film has much better friction properties than those prepared with heat treatment at 500$\circ$C and 700$\circ$C or the original one.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.144-147
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• 2003

Cu+ ions drift diffusion in formal oxide film and SiOCH film for interlayer dielectric is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 0.2MV/cm and temperature $200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$ for 10min, 30min, 60min. The Cu+ ions drift rate of $SiOCH(k=2.85{\pm}0.03)$ film is considerable lower than termal oxide. As a result of the experiment, SiOCH film is higher than Thermal oxide film for Cu+ drift diffusion resistance. The important conclusion is that SiOCH film will solve a causing reliability problems aganist Cu+ drift diffuion in dielectric materials.

• Journal of the Korean institute of surface engineering
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• v.17 no.3
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• pp.78-86
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• 1984

Hard anodic oxide film was investigated formed on pure aluminium with various temperature (30$^{\circ}-60^{\circ}C$), current densities (1.5-3.0A/$dm^2$) and concentrations(3-15g/l) of oxalic acid in 0.5M malic acid bath. The resulting characteristic of the anodic oxide film obtained were summarized as follows in the view point of physical and mechanical properties in relation with the above process variables. 1. The film thickness increased with oxalic acid concentration and bath temperature, while the reversed phenomena were obtained at a high concentration of oxalic acid and high temperature due to the severe dissolution of the anodic oxide film. 2. The hardness and the abrasion resistance were improved by lowering the addition of oxalic acid and the bath temperature. This feature was directly dependent on the porosity formed on the anodic oxide film. 3. The maximum hardness of anodic oxide film showed Hv 579 in the temperature of 30$^{\circ}C$ with the current density, 2.5A/$dm^2$ in the 0.5M malic acid bath mixed with 5g/l oxalic acid.

• Applied Science and Convergence Technology
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• v.26 no.2
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• pp.21-25
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• 2017

The shape of the reflection spectrum is complex and appears to overlap with several signals, because the surface state is uneven due to the natural oxide film, so that the spectrum becomes a complicated signal shape divided into regions 1 and 2 due to diffuse reflection. On the other hand, it is seen that the reflection spectrum after PEO surface treatment is overlapped with several signals. In addition, the reflectance of the energy band varies from 1.32 to 1.46 eV. Usually, the MgO-type oxide film was observed at an energy band of ~4.2 eV. The thickness of the oxide film was increased as the DC voltage was increased by the thin film thickness meter (QuaNix; 7500M) after Plasma Electrolytic Oxidation (; PEO) surface treatment. This is because the higher the DC voltage, the easier the binding of the $OH^-$ ions in the solution solution and the $Mg^+$ ions of the magnesium alloy. An important part of the bonding of ordinary ions is the energy source (plasma) which can promote bonding. However, when a certain threshold voltage or more is applied, the material is adversely affected. The oxide film of the surface may be destroyed without increasing the thickness of the oxide film, that is, whitening of the material may occur.