• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.576-582
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• 2002

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

• Journal of Welding and Joining
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• 제9권4호
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• pp.17-27
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• 1991

The direct brazing technology which could be used for the simplification of brazing process and the improvement of brazed joint quality was studied with $Al_2O_3$ and stainless steels. The brazing of $Al_2O_3$ to STS304 or STS430 was performed under different brazing conditions such as brazing filler metal, temperature, heating rate and brazing time. Microstructural observation and chemical analysis be SEM/EPAM were carried out to verify the quality of brazed joints. 4-point bending strength of brazed joints was also measured to find the optimal brazing conditions. The results showed that, in brazing of $Al_2O_3$, the mixed oxide layer resulted from the reaction between Ti in filler metal and oxide layer on the material surface to be brazed was found to be bery important for the joint quality. The width of oxide layer varied with the brazing conditions such as brazing time, heating rate and chemical composition of filler metals. The strength of brazed joints was more affected by the type of materials and their thermal properties than by brazing heat cycle.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권6호
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• pp.253-259
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• 2002

This paper deals with the effects of grounding conductors for metal oxide surge arresters. When surge arresters are improperly installed, the results can cause costly damage of electrical equipments. In particular, the route of surge arrester connection is very important because bends and links of leads increase the impedances to lightning surges and tend to nullify the effectiveness of a grounding conductor. Therefore, there is a need to know how effective installation of lightning surge arresters is made in order to control voltage and to absorb energy at high lightning currents. The effectiveness of a grounding conductor and 18 [㎸] metal oxide distribution line arresters was experimentally investigated under the lightning and oscillatory impulse voltages. Thus, the results are as follows; (1) The induced voltage of a grounding conductor is drastically not affected by length of a connecting line, but it is very sensitive to types of grounding conductor. (2) The coaxial cable having a low characteristic impedance is suitable as a grounding conductor. (3) It is also clear from these results that bonding the metal raceway enclosing the grounding conductor to the grounding electrode is very effective because of skin effect. (4) The induced voltages of grounding conductors for the oscillatory impulse voltages are approximately twice as large as those for the lightning impulse voltages.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.321-321
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• 2011

We have investigated the electronic structure of graphite oxide by photoelectron spectroscopy at the Pohang Accelerator Laboratory, Korea. The typical sp2 hybridization states found in graphite were also seen in graphite oxide. However, the ${\pi}$ state disappeared near the Fermi level because of bonding between the ${\pi}$ and oxygen-related states originating from graphite oxide, indicating electron transfer from graphite to oxygen and resulting in a downward shift of the highest occupied molecular orbital (HOMO) state to higher binding energies. The band gap opening increased to about 1.8 eV, and additional oxygen-related peaks were observed at 8.5 and 27 eV.

• 마이크로전자및패키징학회지
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• 제7권1호
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• pp.7-12
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• 2000

유리 프릿과 유리 튜브를 사용하지 않고 FED, VFD와 PDP를 봉입할 수 있는 기반 기술로서, 진공 내에서 두 장의 sodalite유리 기판들을 정전 열 접합하는 공정을 연구하였으며, 대기 중에서 정전 열 접합한 기판 쌍들과 비교하여 접합 특성을 비교.분석하였다. 진공 분위기 내에서 비정질 실리콘 interlayer를 이용하여 접합된 유리 기판 쌍의 경우, 대기압의 경우와 비교할 때 동일한 접합 온도와 전압에서 접합 강도가 상대적으로 낮은 것으로 측정되었으며, 산소 분위기의 경우 접합 강도가 증가하였음을 확인하였다. XPS와 SIMS를 통한 비정질 실리콘 표면 및 유리기판 표면의 조성 변화 분석으로부터, 진공내에서 산소가 부족함으로써 정전 열 접합 과정에서 부가적으로 수반되는 실리콘 산화막이 불완전하게 형성된 것으로 해석 할 수 있다.

• 대한치과보철학회지
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• 제25권1호
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• pp.317-325
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• 1987

A study on the shear bonding strength between dental alloy and porcelain according to various kidns of sputtered metallic thin films was established by Ingtron universal testing machine, and the change of the elemental weight % at the surface of dental alloy was studied by E.D.S. The kind of metallic thin films were Al, Ni, In, Cr. Ti and Sn with $0.3{\mu}m$ thickness. The dental alloys were Verabond made by Aalba Dent. Co. and Degudent H manufactured by Degussa Co. The control groups were Verabond and Degudent H. The obtained results were as follows; 1. The shear bonding strength of Al plated sample was the strongest of all. 2. The shear bonding strength of Ni plated sample was stronger than that of Degudent H, Sn plated samples. 3. The shear bonding strength of Verabond was weaker than that of Al, Ni, In, Cr, plated samples. 4. After degassing, it is more weight % of Ni at the alloy surface of the Ni sputtered specimen than the Sn sputtered sample.

• 마이크로전자및패키징학회지
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• 제19권2호
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• pp.29-33
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• 2012

The demand for 3D wafer level integration has been increasing significantly. Although many technical challenges of wafer stacking are still remaining, wafer stacking is a key technology for 3D integration due to a high volume manufacturing, smaller package size, low cost, and no need for known good die. Among several new process techniques Cu-to-Cu wafer bonding is the key process to be optimized for the high density and high performance IC manufacturing. In this study two main challenges for Cu-to-Cu wafer bonding were evaluated: misalignment and bond quality of bonded wafers. It is demonstrated that the misalignment in a bonded wafer was mainly due to a physical movement of spacer removal step and the bond quality was significantly dependent on Cu bump dishing and oxide erosion by Cu CMP.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3310-3312
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• 1999

We have studied the method of silicon direct bonding using the mixture of $HNO_$, $H_2O_2$, and HF chemicals called the controlled slight etch (CSE) solution for the effective wafer cleaning. CSE, two combinations of oxidizing and etching agents, have been used to clean the silicon surfaces prior to wafer bonding. Two wafers of silicon and silicon dioxide were contacted each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in $N_2$ ambient for 2.5 h. We have cleaned silicon wafers with the various HF concentrations and characterized the parameters with regard to surface roughness, chemical nature, chemical oxide thickness, and bonding energy. It was observed that the chemical oxide thickness on silicon wafer decreased with increasing HF concentrations. The initial interfacial energy and final energy postannealed at $1100^{\circ}C$ for 2.5h measured by the crack propagation method was 122 $mJ/m^2$ and 2.96 $mJ/m^2$, respectively.

• 대한치과보철학회지
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• 제54권3호
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• pp.193-202
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• 2016

목적: 본 연구에서는 치과용 CAD-CAM (computer aided design-computer aided manufacturing) hybrid 수복재료인 LAVA Ultimate와 VITA ENAMIC을 광중합 복합레진을 사용하여 수리할 때 표면처리방법(grinding, air abrasion with aluminum oxide, HF acid)과 접착재료(Adper Single Bond 2, Single Bond Universal)의 종류가 두 재료 사이의 전단결합강도에 어떠한 영향을 미치는지 알아보고자 하였다. 재료 및 방법: LAVA Ultimate와 VITA ENAMIC 시편을 30일간 $37^{\circ}C$의 인공타액(Xerova solution)에 보관하여 시효처리를 실시한 후 각각 SiC paper grinding한 것, grinding 후 air abrasion처리를 추가한 것, grinding 후 HF 처리한 것으로 분류하고 각각 no bonding, Adper Single Bond 2, 또는, Single Bond Universal 도포로 세분하여 9개의 group, 총 18개의 subgroup으로 나누어 실험을 실시하였다(N=10). HF 처리group에서는 도재시편을 대조군으로 추가하였다(N=10). 표면 처리 후 광중합 복합레진(Filtek Z250)을 각각의 시편에 부착하고 이를 1주일간 실온의 물에 침적시켰고 이후 전단결합강도를 측정하고 파절양상 및 표면처리 효과를 SEM으로 확인하였다. One-way ANOVA를 이용하여 group 간의 유의성을 분석하였고 사후 분석으로 Scheffe test를 실시하였다(${\alpha}=.05$). 결과: 실험 결과 접착재료 처리를 한 group들이 접착재료 처리를 하지 않은 group에 비해 모든 표면처리에서 더 높은 전단결합력을 나타내었으며, 표면처리만 시행한 group에서는 aluminum oxide air abrasion이 전단결합력의 증가에 약간의 영향을 미치는 것으로 나타났으나 통계적 유의성은 보이지 않았다. 결론: LAVA Ultimate와 VITA ENAMIC의 두 재료를 광중합 복합레진을 이용하여 수리를 실시할 경우 각각의 재료에 적합한 표면처리방법과 접착재료의 선택에 대한 연구가 더 필요할 것으로 사료된다. 특히 LAVA Ultimate의 경우 접착재료의 사용은 추천된다고 사료되었다.

• 마이크로전자및패키징학회지
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• 제28권4호
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• pp.109-114
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• 2021

상압 수소 플라즈마 전처리가 구리-구리 직접 본딩에 미치는 영향에 대해서 조사하였다. 상압 수소 플라즈마 처리를 통해 구리 박막의 표면 산화층을 환원시킬 수 있었음을 GIXRD 분석을 통해 확인하였다. 플라즈마 파워가 크고 플라즈마 처리 시간이 길수록 환원력 및 표면 거칠기 관점에서 효과적이었다. DCB를 이용한 계면 결합 에너지 측정에서 상압 수소 플라즈마 전처리 후 300℃에서 본딩한 경우 양호한 계면 결합 에너지를 나타내었으나, 본딩 온도가 낮아질수록 계면 결합 에너지가 낮아져 200℃에서는 본딩이 이루어지지 않았다. 습식 전처리의 경우 250℃ 이상에서 본딩한 경우 강한 결합력을 보였으며, 200℃에서는 낮은 계면 결합 에너지를 나타내었다.