• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.96.1-96.1
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• 2017

This presentation introduces anodizing science of typical valve metals of Al, Mg and Ti, based on the ionic transport through the andic oxide films in various electrolyte compositions. Depending on the electrolyte composition, metal ions and anions can migrate through the andic oxide film without its dielectric breakdown when point defects are present within the anodic oxide films under high applied electric field. On the other hand, if anodic oxide films are broken by local joule heating due to ionic migration, metal ions and anions can migrate through the broken sites and meet together to form new anodic films, known as plasma electrolytic oxidation (PEO) treatment. In this presentation, basics of conventional anodizing and PEO methods are introduced in detail, based on the ionic migration and movement mechanism through anodic oxide films by point defects and by local dielectric breakdown of anodic oxide films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.307.1-307.1
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• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.107-109
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• 2000

The crystallization process and the electrical properties of amorphous tin-doped indium oxide (ITO) films have been studied in contrast with those of undoped indium oxide (IO) films. Amorphous ITO and IO films were prepared by magnetron sputtering succeeded by annealing in the air at various temperatures. ITO films showed higher crystallization temperature compared with that of IO films, suggesting an excess free energy caused by the repulsion between the active donors ($Sn^{4+}$). The analysis of the electrical properties alternated with the phased annealing of films provided essential information for understanding the conduction mechanisms of ITO. It was also revealed that the amorphous IO/ITO films showed oxidation around $100^{\circ}C$ in contrast with crystalline IO/ITO films with the oxidation temperature above $200^{\circ}C$.

• 한국진공학회지
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• 제3권1호
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• pp.71-76
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• 1994

The electrical characteristics of the capacitor dielectric films of amorphous silicon-nit-ride-oxide(ANO) structures are compared with the capacitor dielectric films of oxide-nitride-oxide (ONO) structrues The electrical characteristics of ONO and ANO films were evaluated by high frequency(1 MHz) C-V high frequency C-V after constant voltage stree I-V TDDB and refresh time measurements. ANO films shows good electrical characteristics such as higher total charge to breakdown storage capacitance and longer refresh time than ONO films. Also it makes little difference that leakage current and flat band voltage shyift(ΔVfb)of ANO ana ONO films.

• 공업화학
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• 제17권2호
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• pp.194-200
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• 2006

금속 산화막 공정에 응용하기 위하여 노즐형태 HCP (hollow cathode plasma) RT-MOCVD에 의해 티타늄 산화막을 증착하였다. TTNB (titanium n-butoxide)를 사용하였을 경우 막을 증착한 후 열처리하여야 하지만 titanium ethoxide에 의해 막을 증착하면 일반적으로 수반되는 열처리 공정을 생략하여도 티타늄 산화막이 직접적으로 형성되었다. RF-power 240 watt, 전극과 기판과의 거리가 3 cm, 반응시간 20 min, Ar와 $O_2$의 유량비 1 : 1에서 티타늄과 산소의 조성비가 1 : 2임을 확인할 수 있었다. 따라서 노즐형태 HCP RT-MOCVD에 의해 티타늄 산화막을 열처리 공정 없이 증착되었으며, 저온에서 다양한 금속 산화막 증착 공정에 응용할 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제7권1호
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• pp.25-31
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• 1994

Properties of oxynitride films reoxidized by $N_2{O}$ gas after thermal oxidation and $N_2{O}$ oxide films directly oxidized by using $N_2{O}$ gas on the bare silicon wafer have been studied. From the AES analysis, nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2{O}$ oxide has observed. $N_2{O}$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces of Si/oxynitride and Si/$N_2{O}$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of N20 oxide and oxynitride films have somewhat higher than those of thermal $SiO_2{O}$, $N_2{O}$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• 한국표면공학회지
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• 제53권1호
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• pp.36-42
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• 2020

In this study, two novel methods to measure the surface hardness of anodic oxide films on aluminum alloys are reported. The first method is to impregnate oil-based ink into pores in the anodic oxide film and then to clean the ink on the surface using ethanol, resulting in an impregnation of inks only inside of the pores in anodic oxide film. The second method is to coat the anodic oxide film surface with thin Au layer less than 0.1 ?. Both the ink-impregnating method and Au-coating method provided clear indentation marks on the anodic oxide film surface when it was indented using a pyramidal-diamond penetrator. Thus, Vickers hardness of anodic oxide films on aluminium alloy could be measured successfully and precisely from the anodic film surface. In addition, advantages and disadvantages of the ink-impregnating method and Au-coating method for the measurement of surface hardness of anodic oxide films are discussed.

• 공업화학
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• 제21권2호
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• pp.224-229
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• 2010

Transparent conducting oxide (TCO) 박막은 평판 디스플레이 산업에 널리 사용되고 있다. 화학적으로 우수한 투명전도성 Indium Zinc Oxide (IZO) 필름은 Indium Tin Oxide (ITO) 필름의 대체 물질로 관심을 끌고 있다. 본 연구에서는 90 : 10 wt%의 $In_2O_3$와 ZnO를 혼합하여 만든 타겟으로 전자빔 증착법을 이용하여 polynorbornene (PNB) 기판 위에 IZO 박막을 제조하였다. UV/Visible spectrophotometer, 4-Point Probe를 이용하여 증착 두께와 산소도입 속도에 따른 IZO 필름의 전기적 및 광학적 특성을 연구하였으며, SEM, XRD 및 XPS를 이용하여 증착된 IZO의 구조적 특성 및 표면조성비를 연구하였다.

• 한국표면공학회지
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• 제51권1호
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• pp.1-10
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• 2018

Anodic oxidation treatment of metals is one of typical surface finishing methods which has been used for improving surface appearance, bioactivity, adhesion with paints and the resistances to corrosion and/or abrasion. This article provides fundamental principle, type and characteristics of the anodic oxidation treatment methods, including anodizing method and plasma electrolytic oxidation (PEO) method. The anodic oxidation can form thick oxide films on the metal surface by electrochemical reactions under the application of electric current and voltage between the working electrode and auxiliary electrode. The anodic oxide films are classified into two types of barrier type and porous type. The porous anodic oxide films include a porous anodizing film containing regular pores, nanotubes and PEO films containing irregular pores with different sizes and shapes. Thickness and defect density of the anodic oxide films are important factors which affect the corrosion resistance of metals. The anodic oxide film thickness is limited by how fast ions can migrate through the anodic oxide film. Defect density in the anodic oxide film is dependent upon alloying elements and second-phase particles in the alloys. In this article, the principle and mechanisms of formation and growth of anodic oxide films on metals are described.

• 전자공학회논문지A
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• 제29A권8호
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• pp.56-62
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• 1992

This paper is analyzed the charge trapping and electrical properties of 0(Oxide), NO(Nitrided oxide) and ONO(Reoxidized nitrided oxide) as dielectric films in MIS structures. We have processed bottom oxide and top oxide by the thermal method, and nitride(Si$_{3}N_{4}$) by the LPCVD(Low Pressure Chemical Vapor Deposition) method on P-type(100) Silicon wafer. We have studied the charge trapping properties of the dielectrics by using a computer controlled DLTS system. All of the dielectric films are shown peak nearly at 300K. Those are bulk traps. Many trap densities which is detected in NO films, but traps. Many trap densities which is detected in NO films. Varing the nitride thickness, the trap densities of thinner nitride is decreased than the thicker nitride. Finally we have found that trap densities of ONO films is affected by nitride thickness.