• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.79-81
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• 1988

The capacitance-voltage (C-V) characteristics of poly-Si gate MOS devices fabricated by Low-Pressure Chemical Vapor Deposition (LPCVD) system have been studied. In the case poly-Si gate, work function difference and surface state charge density was found lower than that of Al gate. This fact was identified from the C-V curves that flatband shift was shown small due to the hydrogen gas diffused into oxide in processing of alloy and the annealing effect in processing of poly-Si deposition.

• 대한안전경영과학회지
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• 제4권2호
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• pp.199-207
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• 2002

The polycrystalline CdS of large scale were grown by chemical pyrolysis deposition for $Cu_2$S/CdS heterojunction solar cells. For high quality CdS polycrystalline thin films, the chemical solution was deposited on indium tin oxide(ITO) glasses at the temperature of 50$0^{\circ}C$ for 15 second and annealed at 35$0^{\circ}C$ for 20 minute or 50$0^{\circ}C$ for 30 second. To fabricate high efficiency solar cells, optical and electrical properties, morphology by SEM and x-ray diffraction on polycrystalline CdS thin films were investigated. From the I-V characteristics of $Cu_2$S/CdS heterojunction, the open circuit voltage, $V_{oc}$ was 0.7 V and the short circuit current, $I_{sc}$ was 4.2 mA. We found that the fill factor(FF) was 0.5 and the efficiency was 2.5%.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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• pp.45-49
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• 2003

본 논문에서는 gate 산화막을 위한 Hf oxide 박막을 $Hf(dmae)_4$ (dmae=dimethylaminoethoxide) 전구체로 Direct Liquid Injection Metal Organic Chemical Vapor Deposition (DLI-MOCVD)방법을 이용하여 p-type Si(100) 기판 위에 증착하였다. 이 전구체를 이용하여 $150^{\circ}C$의 낮은 증착 온도에서도 낮은 carbon 농도와 roughness를 가지는 양질의 박막을 증착할 수 있었다. 증착된 박막은 비정질 구조를 나타내었지만 annealing 온도를 증가시킴에 따라서 결정성(monoclinic phase)을 나타내었다. $500{\AA}$으로 증착한 박막을 C-V 와 I-V curve를 통하여 전기적 특성을 평가하였다. 열처리 온도가 증가함에 따라 유효유전상수(k)는 증가하지만 열처리 온도가 $900^{\circ}C$ 이상이 되면 계면층의 형성에 의해 유효유전상수는 감소하게 되고 이에 따라 누설 전류도 감소하게 된다. 산소분위기 $800^{\circ}C$에서 annealing한 $HfO_2$ 박막의 유전상수는 20.1이고, 누설 전류 밀도는 SV에서 $2.2\times10^{-6}A/\textrm{cm}^2$ 로 좋은 전기적 특성을 가진다.

• 한국세라믹학회지
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• 제37권11호
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• pp.1025-1032
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• 2000

산화분위기에서의 반응성 이온빔 스퍼터링법으로 Sn과 Sb 금속 타겟을 사용하여 실온에서 ATO 박막을 증착하였다. Sb 첨가량, 박막의 두께 및 열처리가 ATO 박막의 전기적 특성과 광학적 특성에 미치는 효과를 연구하고자 하였다. 제조된 ATO 박막의 두께는 약 1500$\AA$과 1000$\AA$으로 조절하였으며, Sb 농도는 10.8wt% 또는 14.9wt%임이 XPS 분석에 의하여 확인되었다. 증착한 박막의 열처리는 40$0^{\circ}C$~$600^{\circ}C$의 온도범위에서 산소 또는 forming gas(10% H$_2$-90% Ar) 분위기에서 30분간 수행하였다. 이렇게 제조된 ATO 박막은 Sb의 첨가량, 두께 및 열처리 조건에 따라 다양한 전기 비저항 값과 가시광선 대역에서의 광투과도를 나타내었다.

• Journal of information and communication convergence engineering
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• 제1권2호
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• pp.63-66
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• 2003

High $T_c$ superconducting lines will be applied as key materials in the areas of power transmission line; magnetic levitation of vehicle; magnetic separation; magnetic energy storage and marine propulsion. A combination method of electrophoresis deposition and zone-melting for preparation of YBaCuO tape is proposed. The submicron particle powder of YBaCuO made by sol-gel method is used in the electrophoresis process. A 40∼50 ${\mu}\textrm{m}$ thickness of YBaCuO film on Ag plate could be deposited in about three minutes. After deposition the film is rolled and heat treated in order to increase the density and the adhesion of the film to the Ag plate. Silver(Ag) and lead oxide(PbO) were added in the YBaCuO powder in order to reduce its melting point. The YBaCuO coating with controlled Ag and PbO contents was preliminarily zone-melted at about $945^{\circ}C$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.103-104
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• 2007

$CuInO_2$ 단일상은 합성조건이 매우 까다롭기 때문에 일반적인 고상법으로 얻기 힘든 것으로 알려저 있다. 투명전도성 $CuInO_2$ 박막을 증착하기 위하여 일반적인 고상법으로 Cu와 In의 비율이 1:1인 $Cu_2O-In_2O_3$ composite target 및 In 대신 Ca, Mg, Ti가 각각 1mol% 도핑된 target을 제작하였다. 제작된 각각의 composite target을 이용하여 pulsed laser deposition(PLD) 공정으로 투명전도성 $CuInO_2$ 박막을 증착하였다. Cu와 In이 1:1 인 $Cu_2O-In_2O_3$ composite target을 사용한 경우, 증착된 박막이 Cu와 In의 비율이 1:1인 c-axis 배향된 단일상의 $CuInO_2$ 박막임을 확인하였다.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.376-382
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• 2000

We successfully fabricated OLED(Organic Light Emitting Diodes) with Al cathodes electrode deposited by the DC magnetron sputtering. The effects of a controlled Al cathode layer of an Indium Tin Oxide (ITO)/blended single polymer layer (PVK Bu:PBD:dye)/Al light emitting diodes are described. The PVK (Poly(N-vinylcarbazole)) and Bu-PBD (2-(4-biphenyl-phenyl)-1,3,4-oxadiazole) are used hole transport polymer and electron transport molecule respectively. We found that both current injection and electroluminescence output are significantly different with a variable DC sputtering power. The difference is believed to be due to the influence near the blended polymer layer/cathode interface that results from the DC power and H$\sub$2//O in a chamber. And DC sputtering deposition is an effective way to fabricate Al electrodes with pronounced orientational characteristics without damage occurring to metal-organic interface during the sputtering deposition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.484-485
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• 2007

BiSrCaCuO superconducting thin films have been fabricated by co-deposition using the faraday cup. Despite setting the composition of thin film Bi2212, Bi(2201, 2212, 2223) phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$, and it was distributed in the rezone.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.26-26
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• 2000

High quality epitaxial Y2O3 thin films were prepared on Si(111) and (001) substaretes by using ion beam assisted deposition. As a substrate, clean and chemically oxidized Si wafers were used and the effects of surface state on the film crystallinity were investigated. The crystalline quality of the films were estimated by x-ray scattering, rutherford backscattering spectroscopy/channeling, and high-resolution transmission electron microscopy (HRTEM). The interaction between Y and Si atoms interfere the nucleation of Y2O3 at the initial growth stage, it could be suppressed by the interface SiO2 layer. Therefore, SiO2 layer of the 4-6 layers, which have been known for hindering the crystal growth, could rather enhance the nucleation of the Y2O3 , and the high quality epitaxial film could be grown successfully. Electrical properties of Y2O3 films on Si(001) were measured by C-V and I-V, which revealed that the oxide trap charge density of the film was 1.8$\times$10-8C/$\textrm{cm}^2$ and the breakdown field strength was about 10MV/cm.

• 한국표면공학회지
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• 제22권3호
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• pp.135-144
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• 1989

Aluminium Oxide was deposited with a C.V.D.-technique on various substrates. The effects of various treating condition such as temperature, time, heat resistance and composition of substrates were investigated in order to understand the relationship of structure, property and process. Grain size depends upon the activity of adsorption siite and coarsened with increasing temperature and time. Deposition rate decreases in order of electrolytic iron, carbon steel STS430 and STS304, since the active site for adsorption of reactant was more decreased for Cr and Ni than Fe. Oxidation resistance of alumina coated specimens improved markedely and that of stainless steel was prominent.