• 한국재료학회지
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• 제11권11호
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• pp.997-1000
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• 2001

Conducting perovskite oxide, $(Ba,Sr)RuO_3(BSR)$, which has many advantages for $(Ba,Sr)TiO_3(BST)$ due to their similarity in crystal structure, lattice constant and chemical composition, was prepared on n-type Si (100) by liquid delivery metalorganic chemical vapor deposition(LDMOCVD). The deposition characteristics of BSR were controlled by gas-phase mass-transfer in the experiment. The BSR films deposited at 50$0^{\circ}C$ and oxygen flow rate of 100 sccm(standard cc/min) showed an average roughness of 22 $\AA$and resistivity of 810 $\mu$$\Omega$-cm. The roughness of BSR films with oxygen flow rate showed a close relationship with the resistivity of films. BSR (110) peak shifted toward lower Bragg angle with increase of x in the$(Ba_x,Sr_{1-x})TiO_3$. The resistivity of BSR films increased from 810 to 924 $\mu$$\Omega$-cm with increase of Ba content(x).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.689-689
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• 2013

Atomic layer deposition (ALD)에 의한 알루미늄 산화 막(Al2O3)은 고효율 결정질 실리콘 태양전지를 위한 우수한 표면 패시베이션 특성을 제공한다. 알루미늄 산화막는 고정적인 음전하를 가지고 있기 때문에 p-형 실리콘 태양 전지 후면은 전계에 의한 우수한 패시베이션 효과를 형성한다. 그러나, ALD 방식으로 증착된 알루미늄 산화막은 매우 긴 공정 시간을 필요로 하기 때문에 기존의 실리콘 태양 전지 공정에 적용하기가 어렵다. 본 논문에서는 알루미늄 산화막 형성에서 공정 시간을 줄이기 위해 Plasma assisted atomic layer deposition (PA-ALD) 방식을 적용했다. PA-ALD 기술은 trimethylaluminum (TMA)과 O2를 사용하여 기판 표면에 알루미늄 산화막을 증착하는 것으로 ALD 방식과 유사하지만, O2 플라즈마를 사용함으로써 증착 속도를 향상시킬 수 있다. 이는 좋은 패시베이션 특성을 가지는 알루미늄 산화막을 실리콘 태양전지양산 공정에 적용할 수 있는 가능성을 제시한다. PA-ALD 방식에 의한 알루미늄 산화막의 패시베이션 특성을 최적화하기 위해서 증착 후 열처리 조건에 대한 연구도 수행하였다. 막증착률이 1.1${\AA}$/cycle인 Al2O3층의 두께 변화에 따른 특성을 최적화하기 위해 공정 온도를 $250^{\circ}C$ 고정하고, 열처리 온도와 시간을 가변하였으며 유효 반송자수명을 측정하여 알루미늄 산화막의 패시베이션 특성을 확인했다.

• 한국재료학회지
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• 제12권8호
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• pp.661-668
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• 2002

A study was made to examine the electrical, compositional, structural and morphological properties of Ag thin films deposited by DC magnetron sputtering in $O_2$ atmosphere with deposition temperature from room temperature to 15$0^{\circ}C$ using in-line sputter system. The Ag films deposited at temperature above $100^{\circ}C$ in oxygen atmosphere gave a similar specific resistivity to and even lower oxygen content than those deposited using pure Ar sputter gas The Ag films deposited with pure Ar gas was mainly composed of crystallites with [111] preferred orientation, while, for those deposited in oxygen atmosphere, more than 50% of the volume was composed of crystallites with [100] orientation. The difference in the micro structure did not cause any difference in the specific resistivity of Ag films. The results showed that the transparent conducting oxide films and the Ag films could be processed sequentially in the same deposition chamber with careful control of deposition temperature, which might result in a cost reduction for constructing the large scale in-line deposition system.

• 한국진공학회지
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• 제11권1호
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• pp.16-21
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• 2002

$Si_2H_6$가스를 이용한 LPCVD내에서의 실리콘의 선택적 에피텍시 성장을 $1000^{\circ}C$ 이하의 초청정 분위기하의 저온에서 수행하였다. HCI 첨가없이 초청정 공정으로 인한 양질의 에피텍시 Si층이 균일하게 얻어 졌으며, $SiO_2$위에 증착된 실리콘의 잠복기를 발견할 수 있었다. 단결정위의 에피텍시 층은 산화물 층위 보다 더 두껍게 증착되었다. 산소첨가로 잠복기가 20~30초간 증가하였다. 증착된 박막의 절단면과 표면 형상은 SEM으로 관찰되었으며, XRD를 통해 막질을 평가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• 한국세라믹학회지
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• 제35권7호
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• pp.733-739
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• 1998

C-axis oriented zinc oxide thin films were deposited on Cornign 1737 glass substrate by an rf magnetron sputtering technique. The effects of deposition parameters and post heat-treatment on the crystallinity and electical properties of ZnO films were investigaed. As-deposited ZnO films showed the strong c-axis growth and excellent crystallinity under the deposition conditions as follows: substrate temperature 350$^{\circ}C$ ; growth and excellent crystallinity under the deposition conditions as follows ; substrate temperature 350$^{\circ}C$ rf power 75W ; gas pressure 6m Torr; percentage of oxygen 50% The higher heat-treating temperatue was the stronger c-axis growth and the better crystallinity of the deposited ZnO films were. The resistivity of ZnO films was significantly affected by deposition parameters and post heat-treatment. With increasing increased. After post heat-treating at 400$^{\circ}C$ in air the resistivity of ZnO films increased but post heat-treat-ing temperature 500$^{\circ}C$ rather diminished the film resistivity.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.79-84
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• 1999

the photolithographic patterning on an indium-tin oxide (ITO) glass and the electro-phoretic deposition were combined for preparing the screen of the full-color field emission display(FED). the patterns with a pixel of 400$\mu\textrm{m}$ on the ITO-glass were made by etching the ITO with well-prepared etchant consisting of HCL, H2O, and HNO3. Electrophoretic method was carried out in order to deposit each spherical red (R), green(G), and blue (B) phosphor on the patterned ITO-glass. The process parameters such as bias voltage, salt concentration, and deposition time were optimized to achieve clear boundaries. It was found that the etching process of ITO combined with electrophoretic method was cost-effective, provided distinct pattern, and even reduced process steps compared with conventional processes. The application of reverse bias to the dormant electrodes while depositing the phosphors on the stripe pattern was found to be very critical for preventing the cross-contamination of each phosphor in a pixel.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.188-188
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

• 한국표면공학회지
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• 제42권2호
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• pp.63-67
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• 2009

CdSe is one of the composite semiconductor materials used in hybrid solar cell. CdSe nanorods were fabricated using electrochemical deposition in anodic aluminum oxide (AAO) template. CdSe were deposited from $CdSO_4$ and $H_2SeO_3$ dissolved aqueous solution by direct current electrochemical deposition. Uniformity of CdSe nanorods were dependent on the diameter and the height of holes in AAO. The current density, current mode, bath composition and temperature were controlled to obtained 1:1 atomic composition of CdSe. CdSe electroplating in AAO is bottom-up filling so we applied direct current is better than others for good uniformity of CdSe nanorods. The optimum conditions to obtain 1:1 atomic composition of CdSe nanorods are direct current $10\;mA/cm^2$, 0.25 M $CdSO_4$-5 mM $H_2SeO_3$ electrolytes at room temperature.

• 한국표면공학회지
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• 제50권2호
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• pp.72-84
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• 2017

In this work, electrophoretic paint (E-paint) was deposited on AZ31 Mg alloy after four different surface pretreatments: knife abrading, SiC paper abrading, deionized (DI) water immersion and NaOH immersion. The deposition process of E-paint was studied by analyses of voltage-time and current-time curves, amount of deposited paint, current efficiency and surface oxide film resistance and the adhesion of E-paint was examined by tape test before and after immersion in DI water for 500 h at $40$^{\circ}C$. It was found that the induction time for the deposition, the amount of deposited paint and the current efficiency are inversely proportional to the resistances of surface films prepared by different surface pretreatment methods. The electrophoretic painting showed longer inductance time, larger amount of deposited paint and higher current efficiency on the highly conducting surfaces, such as knife-abraded and SiC-abraded surfaces than on the less conducting surfaces, such as DI water-immersed and NaOH-immersed samples. Excellent adhesion was observed on the E-paintings deposited onto knife-abraded and SiC-abraded AZ31 Mg alloy samplesSiC-abraded AZ31 Mg alloy samples.