• 제목/요약/키워드: Oxide Deposition

검색결과 1,530건 처리시간 0.029초

The structures and catalytic activities of metallic nanoparticles on mixed oxide

  • 박준범
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.339-339
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    • 2010
  • The metallic nanoparticles (Pt, Au, Ag. Cu, etc.) supported on ceria-titania mixed oxide exhibit a high catalytic activity for the water gas shift reaction ($H_2O\;+\;CO\;{\leftrightarrow}\;H_2\;+\;CO_2$) and the CO oxidation ($O_2\;+\;2CO\;{\leftrightarrow}\;2CO_2$). It has been speculated that the high catalytic activity is related to the easy exchange of the oxidation states of ceria ($Ce^{3+}$ and $Ce^{4+}$) on titania, but very little is known about the ceria titanium interaction, the growth mode of metal on ceria titania complex, and the reaction mechanism. In this work, the growth of $CeO_x$ and Au/$CeO_x$ on rutile $TiO_2$(110) have been investigated by Scanning Tunneling Microscopy (STM), Photoelectron Spectroscopy (PES), and DFT calculation. In the $CeO_x/TiO_2$(110) systems, the titania substrate imposes on the ceria nanoparticles non-typical coordination modes, favoring a $Ce^{3+}$ oxidation state and enhancing their chemical activity. The deposition of metal on a $CeO_x/TiO_2$(110) substrate generates much smaller nanoparticles with an extremely high activity. We proposed a mechanism that there is a strong coupling of the chemical properties of the admetal and the mixed-metal oxide: The adsorption and dissociation of water probably take place on the oxide, CO adsorbs on the admetal nanoparticles, and all subsequent reaction steps occur at the oxide-admetal interface.

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Fabrication and Characteristics of Indium Tin Oxide Films on CR39 Substrate for OTFT

  • Kwon, Sung-Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제7권5호
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    • pp.267-270
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    • 2006
  • The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

전기방사를 이용한 반도체 산화물(ZnO) 나노웹 제조에 관한 연구 (Studies on semiconducting metal-oxide(ZnO) Nanoweb from Electrospinning)

  • 조나경;김한성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.253-253
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    • 2009
  • Electrospinning is one of the simple, cost- efficient methods to produce long continuous semiconducting oxide nanofibers. Polyvinyl Alcohol (PVA) and zinc acetate were used. PVA/Zinc acetate aqueous solutions were electrospun into nonwoven webs. CCD camera, with a lens of long working distance and digital video board were used in capturing the drop and web deposition. The diameter and morphology of nanofibers were analyzed with a Field-emission scanning electron microscopy (FE-SEM). In this study, the average diameter and morphology of nanofibers have been explorered.

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Dielectric property and conduction mechanism of ultrathin zirconium oxide films

  • Chang, J.P.;Lin, Y.S.
    • E2M - 전기 전자와 첨단 소재
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    • 제16권9호
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    • pp.61.1-61
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    • 2003
  • Stoichiometric, uniform, amorphous ZrO$_2$ films with an equivalent oxide thickness of ∼1.5nm and a dielectric constant of ∼18 were deposited by an atomic layer controlled deposition process on silicon for potential application in meta-oxide-semiconductor(MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields. the MOS devices showed low leakage current, small hysteresis(〈50mV), and low interface state density(∼2*10e11/cm2eV). Microdiffraction and high-resolution transmission electron microscopy showed a localized monoclinic phase of ${\alpha}$-ZrO$_2$ and an amorphous interfacial ZrSi$\_$x/O$\_$y/ layer which has a correspondign dielectric constant of 11

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알카리토금속 화합물에 의한 루테늄의 흡착 (Adsorption of Ruthenium on the alkaline Earth Metal Compounds)

  • 류경옥;문세기;이근범
    • 한국세라믹학회지
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    • 제19권2호
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    • pp.145-151
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    • 1982
  • Many materials such as silica gel, metallic oxide, activated alumina and alkaline earth metal carbonates were employed as filter media for gaseous oxides of ruthenium volatilized during high level radioactive waste processing. The adsorption efficiency of ruthenium on these materials was evaluated. For the purpose of observing behavior of ruthenium oxides, thermogravimetric analysis of ruthenium oxide in a stream of oxygen was carried out. The rate of volatilization was proportional to the square root of oxygen partial pressure, and increased exponentially with temperature. At $650^{\circ}C$, gaseous ruthenium oxides showed a strongly marked effect of deposition. Of all the materials available, calcium oxide proved to be the best that could be used to adsorb ruthenium.

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Metal-Oxide-Semiconductor 광전소자 (Metal-Oxide-Semiconductor Photoelectric Devices)

  • 강길모;윤주형;박윤창;김준동
    • 한국전기전자재료학회논문지
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    • 제27권5호
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    • pp.276-281
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    • 2014
  • A high-responsive Schottky device has been achieved by forming a thin metal deposition on a Si substrate. Two-different metals of Ni and Ag were used as a Schottky metal contact with a thickness about 10 nm. The barrier height formation between metal and Si determines the rectifying current profiles. Ag-embedding Schottky device gave an extremely high response of 17,881 at a wavelength of 900 nm. An efficient design of Schottky device may applied for photoelectric devices, including photodetectors and solar cells.

Fabrication and Ammonia Gas Sensing Properties of Chemiresistor Sensor Based on Porous Tungsten Oxide Wire-like Nanostructure

  • Vuong, Nguyen Minh;Kim, Do-Jin;Hieu, Hoang Nhat
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.25.2-25.2
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    • 2011
  • The tungsten oxide wire-like nanostructure is fabricated by deposition and thermal oxidation of tungsten metal on porous single wall carbon nanotubes (SWNTs). The morphology and crystalline quality of materials are investigated by SEM, TEM, XRD and Raman analysis. The results prove that $WO_3$ wire-like nanostructure fabricated on SWNTs show highly porous structures. Exposure of the sensors to NH3 gas in the temperature range of 150~300$^{\circ}C$ resulted in the highest sensitivity at $250^{\circ}C$ with quite rapid response and recovery time. Response time as a function of test concentrations and NH3 gas sensing mechanism is reported and discussed.

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초음파분무법을 이용한 산화철이 혼합된 ZnO막의 제조 (Preparation of Iron Oxide-mixed ZnO films by Ultrasonic Spray Pyrolysis)

  • 최무희;마대영
    • 한국전기전자재료학회논문지
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    • 제19권1호
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    • pp.58-63
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    • 2006
  • In this Paper, ZnO films mixed with iron oxide were prepared by an ultrasonic spray pyrolysis method. The chemical composition and structural properties as a function of the Fe atomic ratio in the deposition solution were studied. Zinc acetate and ferrous chloride were used as precursors of Zn and Fe, respectively. Fe atomic ratio to Zn varied from 0.15 to 10.0. Substrate temperature was fixed at $250^{\circ}C$. The crystallographic properties and surface morphologies of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. Electron probe X-ray microanalysis (EPMA) and X-ray photoelectron spectroscopy (XPS) were carried out to analyse the chemical composition and state of Zn and Fe atoms.

Durability Improvement of Electrochromic Tungsten Oxides Films

  • Yang, J.Y.;Kim, J.W.;Kang, G.H.;K.D.Ko;Lee, G.D.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.157-157
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    • 1999
  • Electrochromic tungsten oxide films were prepared by the electron beam deposition, and the dependence of the electrochemical stability and the optical properties on the titanium concentration, and on the annealing temperature, that was investigated. coloring and bleaching experiments were repeated by cyclic voltammetry in a propylene carbonate solution of LiClO4. Spectrometry was used to assess the stability of the transmittance in the degraded films. Tungsten oxide films with titanium contents of about 10~15 mol% were found to be most stable, undergoing the least degradation during the repeated for coloring and bleaching cycles. The reason for this small amount of degradation was the reduction of lithium ion trapping sites in the films, which results in an increased durability. Tungsten oxide films with titanium contents of about 20 mol% were annealed at 20$0^{\circ}C$ for 1 hour, and this results showed that durability of films were increased.

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진공에서 열처리된 ITO 박막의 특성 (Properties of indium tin oxide thin films annealed in vacuum)

  • 이임연;이기암
    • 한국광학회지
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    • 제11권3호
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    • pp.152-157
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    • 2000
  • 전자빔 증착된 Indium Tin Oxide(ITO) 박막의 진공 열처리 효과를 알아보기 위해 진공 및 대기 중에서 열처리 온도( $200-335^{\circ}C$) 및 산소 분압 변화($1\times^10^{-5}-1$\times10^{-4} torr$)에 따른 투과율과 면-저항의 변화 및 결정구조를 조사하였다. 시편은 (222) 계열의 면의로 우세 배향된 다결정박막이다. 진고 열처리 변수를 적절하게 조절하여 $62\Omega/\box$의 면저항과 99%(500nm) 이상의 투과율을 가지는 고품질의 박막을 얻을 수 있었다.

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