• 한국분말재료학회지
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• 제18권1호
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• pp.49-55
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• 2011

Ni nanowires were fabricated using anodic aluminum oxide (AAO) membrane as a template by electrochemical deposition. The nanowires were formed within the walls of AAO template with 200 nm in pore diameter. After researching proper voltage and temperature for electrochemical deposition, the length of Ni nanowires was controlled by deposition time and the supply of electrolyte. The morphology and microstructure of Ni nanowires were investigated by field emission scanning electron microscope (FE-SE), X-ray diffraction (XRD) and transmission electron microscope (TEM).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.307.1-307.1
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• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.373-373
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• 2012

We fabricated conductive zinc oxide (ZnO) thin film at low temperature by UV-enhanced atomic layer deposition. The atomic layer deposition relies on alternate pulsing of the precursor gases onto the substrate surface and subsequent chemisorption of the precursors. In this experiment, diethylzinc (DEZ) and $H_2O$ were used as precursors with UV light. The UV light was very effective to improve the conductivity of the ZnO thin film. The thickness, transparency and resistivity were investigated by ellisometry, UV-visible spectroscopy and Four-point probe.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.72-73
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• 2009

In this study, we fabricated of pentacene organic thin film trasistor(OTFT), which used aluminum oxide for the gate insulator on glass substrate. Aluminum oxide for OTFTs was deposited on the gate layer by E-beam evaporation. aluminum oxide fabricated various deposition rate. In this case of the deposition rate of $0.1\;{\AA}$, the fabricated aluminum oxide gate insulator OTFT showed a threshold voltage of -1.36V, an on/off current ratio of $1.9{\times}l0^3$ and field effect mobility $0.023\;cm^2/V_s$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.160-160
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• 2013

Dye-sensitized solar cells (DSSCs) have attracted much attention because of their moderate light-to-electricity conversion efficiency, easy fabrication, and low cost. At present, platinum (Pt) is used as a counter electrode in DSSCs. However, it is found that Pt dissolves in iodide electrolyte solutions and creates chemical compound such as PtI4 and H2PtI6. Carbon based materials are one of candidates for a counter electrode of DSSCs. We prepare two types of graphite oxides by different chemical treatments; original graphite oxide, hydrazine treated graphite oxide. Each graphite oxide and magnesium nitrate dispersed in deionized water are prepared as solutions for electrophoretic deposition (EPD). Each graphite oxide electrode is deposited on fluorine-doped tin oxide (FTO) substrate by EPD method. Structural and electrochemical properties of each electrode are investigated by field-emission scanning electron microscopy and electrochemical impedance spectroscopy, respectively.

• 센서학회지
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• 제26권4호
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• pp.228-234
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• 2017

Gas sensors based on metal-oxide-semiconductors are predominantly used in numerous applications including monitoring indoor air quality and detecting harmful substances such as volatile organic compounds. Nanostructures, e.g., nanoparticles, nanotubes, nanodomes, or nanofibers, have been widely utilized to improve the gas sensing properties of metal-oxide-semiconductors by increasing the effective surface area participating in the surface reaction with target gas molecules. Recently, 1-dimensional (1D) metal oxide nanostructures fabricated using glancing angle deposition (GAD) method with e-beam evaporation have been widely employed to increase the surface-to-volume ratio significantly with large-area uniformity and reproducibility, leading to promising gas sensing properties. Herein, we provide a brief overview of 1D metal oxide nanostructures fabricated using GAD and their gas sensing properties in terms of fabrication methods, morphologies, and additives. Moreover, the gas sensing mechanisms and perspectives are presented.

• 반도체디스플레이기술학회지
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• 제11권4호
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• pp.1-6
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• 2012

Keeping the polarization direction of the projection light unchanged is of crucial importance for high quality of images on a double-screen 3D projection display system. It has been found that the deposition of oxide layers on the surfaces of scattering polarizer film results in an improvement of polarization maintenance property of the film. The secondary image formed on the front screen by the light scattered from the rear screen decreases by 30% through the application of oxide layers on both surfaces of the screen. Since the oxide layer can also be used as an anti-reflection (AR) coating of the film, this method is very effective for the projection display applications.

• Corrosion Science and Technology
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• 제13권4호
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• pp.145-151
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• 2014

The objectives of this study are to investigate the effect of the concentration ratios of Ni and Fe ions on crud deposition onto the fuel cladding surface in the simulated primary environments of a pressurized water reactor. Crud deposition tests were conducted in the Ni and Fe concentration ratios of 20:20 ppm, 39:1 ppm and 1:39 ppm at $325^{\circ}C$ for 14 days. In the case of the same Ni and Fe ion ratio (20:20), nickel ferrite with a polyhedral shape was formed. Nickel oxide deposits with a needle shape were formed in the condition of high Ni to Fe ion ratio (39:1), While polyhedral iron oxide and needle-like nickel oxide formed in the condition of low Ni to Fe ion ratio (1:39). The amount of deposits increased, when Fe oxides were formed. This indicates that Fe rich oxides stimulated Ni oxide deposition.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.121.2-121.2
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• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.319.1-319.1
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• 2013

Solid oxide fuel cells (SOFCs) have been recognized as one of emerging renewable energy sources, due to minimized pollutant production and high efficiency in operation. The performance of SOFCs is largely dependent on the electrode polarization which involves the oxidation/reduction in cathodes and anodes along with the charge transport of ions and electronic carriers. Atomic layer deposition is based on the alternate chemical surface reaction occurring at low temperatures with high uniformity and superior step coverage. Such features can be extended into the coating of metal oxide and/or metal layer onto the porous materials. In particular, the atomic layer deposition is can manipulated in controlling the charge transport in terms of triple phase boundaries, in order to control artificially the electrochemical polarization in electrodes of SOFC. The current work applied atomic layer deposition of metal oxides intro the electrodes of SOFCs. The corresponding effect was monitored in terms of the electrochemical characterization. The roles of atomic layer deposition in solid oxide fuel cells are discussed towards optimized towards long-term durability at intermediate temperature.