• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.54.1-54.1
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• 2007

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.39.1-39
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• 2003

• 한국재료학회지
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• 제2권1호
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• pp.76-82
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• 1992

$TEOS-O_3$ 산화막은 깔개층 물질에 따라 증착속도가 변하는 특성을 나타낸다. 본 논문에서는 $TEOS-O_3$ 산화막의 깔개층 물질 의존성 이외에도 배선 밀도, 배선 간격에 따라 증착속도가 달라지는 패턴 의존성에 대하여 조사하였다. 또한 $TEOS-O_3$ 산화막의 깔개층 물질 의존성 및 패턴 의존성을 줄이기 위해 다층 배선에서 1차 배선후에 깔개층, 즉 TEOS-base 프라즈마 산화막 및 $SiH_4-base$ 프라즈마 산화막을 증착했을 때 $TEOS-O_3$ 산화막의 증착 특성을 조사하였다. 그리고 그 깔개층 물질에 $N_2$ 프라즈마 처리를 했을 때 $TEOS-O_3$ 산화막의 증착 특성에 대해 조사하였다. 그 결과 $TEOS-O_3$ 산화막에서 기판 위에 배선 밀도와 배선 간격에 따른 의존성은 깔개층물질이 $SiH_4-base$ 일때보다 TEOS-base 프라즈마 산화막인 경우 $N_2$ 프라즈마 처리를 하면 깔개층 물질 표면이 O-Si-N화 되므로써 의존성이 사라지게 된다.

• 한국전기전자재료학회논문지
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• 제27권10호
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• pp.642-647
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• 2014

For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as $N_2$, $NH_3$, NO, and $NO_2$ and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with $NH_3OH$ doping source.

• 한국세라믹학회지
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• 제45권12호
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• pp.796-801
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• 2008

$LaGaO_3$ thin film was prepared on Ni-Fe metal porous substrate by Pulsed Laser Deposition method. By the thermal reduction, the dense $NiO-{Fe_3}{O_4}$ substrate is changed to a porous Ni-Fe metal substrate. The volumetric shrinkage and porosity of the substrate are controlled by the reduction temperature. It was found that a thermal expansion property of the Ni-Fe porous metal substrate is almost the same with that of $LaGaO_3$ based oxide. $LaGaO_3$ based electrolyte films are prepared by the pulsed laser deposition (PLD) method. The film composition is sensitively affected by the deposition temperature. The obtained film is amorphous state after deposition. After post annealing at 1073K in air, the single phase of $LaGaO_3$ perovskite was obtained. Since the thermal expansion coefficient of the film is almost the same with that of LSGM film, the obtained metal support LSGM film cell shows the high tolerance against a thermal shock and after 6 min startup from room temperature, the cell shows the almost theoretical open circuit potential.

• 반도체디스플레이기술학회지
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• 제22권4호
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• pp.53-58
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• 2023

The storage capacity of 3D-NAND flash memory has been enhanced by the multi-layer dielectrics. The deposition process has become more challenging due to the tight process margin and the demand for accurate process control. To reduce product costs and ensure successful processes, process diagnosis techniques incorporating artificial intelligence (AI) have been adopted in semiconductor manufacturing. Recently there is a growing interest in process diagnosis, and numerous studies have been conducted in this field. For higher model accuracy, various process and sensor data are required, such as optical emission spectroscopy (OES), quadrupole mass spectrometer (QMS), and equipment control state. Among them, OES is usually used for plasma diagnostic. However, OES data can be distorted by viewport contamination, leading to misunderstandings in plasma diagnosis. This issue is particularly emphasized in multi-dielectric deposition processes, such as oxide and nitride (ON) stack. Thus, it is crucial to understand the potential misunderstandings related to OES data distortion due to viewport contamination. This paper explores the potential for misunderstanding OES data due to data distortion in the ON stack process. It suggests the possibility of excessively evaluating process drift through comparisons with a QMS. This understanding can be utilized to develop diagnostic models and identify the effects of viewport contamination in ON stack processes.

• 한국진공학회지
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• 제17권2호
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• pp.96-101
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• 2008

MgO는 플라즈마 디스플레이 패널 (Plasma Display Panel, PDP)의 보호막으로 널리 쓰이고 있다. 기존의 산소 이온빔 보조 증착(Ion-Beam-Assisted Deposition, IBAD) 방법을 이용하여 MgO 보호막을 형성시킨 경우 이온빔의 충전에 의해 야기되는 아크(Arc) 문제 등이 있었다. 이 문제점을 해결하기 위하여, 산소 중성빔 보조증착(Neutral-Beam-Assisted Deposition, NBAD) 방법을 이용하여 MgO를 증착하였다. 그리고 산소 중성빔의 에너지를 변화시킴에 따라 MgO 보호막의 특성과 PDP 패널 방전 특성에 미치는 영향을 분석하였다. 이에 따른 실험 결과로부터 산소 중성빔 에너지가 300eV일 때, 최소 방전 개시 전압, 최고 발광 휘도 및 최고 발광 효율을 얻을 수 있었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 추계학술발표대회 및 제15회 신소재 심포지엄
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• pp.22.2-22.2
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• 2008

• Bulletin of the Korean Chemical Society
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• 제25권4호
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• pp.563-565
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• 2004

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 창립 20주년기념 특별학술발표회
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• pp.270-271
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• 2009