• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.109-109
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• 2000

Recently, carbon nanotube has been investigating for field emission display ( (FED) applications due to its high electron emission at relatively low electric field. However, the growing of carbon nanotube generally requires relatively high temperature processing such as arc-discharge (5,000 ~ $20,000^{\circ}C$) and laser evaporation (4,000 ~ $5,000^{\circ}C$) methods. In this presentation, low temperature growing of carbon nanotube by plasma enhanced chemical vapor deposition (PECVD) using nickel catalyst which is compatible to conventional FED processing temperature will be described. Carbon n notubes with average length of 100 run and diameter of 2 ~ $3\mu$ill were successfully grown on silicon substrate with native oxide layer at $550^{\circ}C$using nickel catalyst. The morphology and microstructure of carbon nanotube was highly depended on the processing temperature and nickel layer thickness. No significant carbon nanotube growing was observed with samples deposited on silicon substrates without native oxide layer. This is believed due to the formation of nickel-silicide and this deteriorated the catalytic role of nickel. The formation of nickel-silicide was confirmed by x-ray analysis. The role of native oxide layer and processing parameter dependence on microstructure of low temperature grown carbon nanotube, characterized by SEM, TEM XRD and R없nan spectroscopy, will be presented.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.3
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• pp.473-478
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• 2006

High quality indium tin oxide (ITO) thin films have been prepared by DC magnetron sputtering technique. By controlling the deposition parameters such as substrate temperature and oxygen flow rate, we were able to minimize the negative ion damage during the deposition. Films pr데ared under such conditions were found to posses an excel]ent electrical resistivity of $1.6\times10^{-4}{\Omega}cm$ and also found to have a optical transmission above 90%. We also observe that, increasing the oxygen now rate above 4 sccm leads to an increase in electrical resistivity of the films while the transmission was found to saturate with the increase in the oxygen gas flow.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.15-19
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• 2001

Transparent and conducting tin oxide thin films were prepared on soda lime silicate glass by thermal chemical vapour deposition. Thin films were fabricated from mixtures of tetramethyltin (TMT) as a precursor, oxygen or oxygen containing ozone as an oxidant. The properties of fabricated tin oxide films are highly changed with variations of substrate temperature. Optimized thin films could be prepared on TMT, which flow rate of 8 sccm, oxygen flow rate of 150 sccm and substrate temperature of 38$0^{\circ}C$. We reduced deposition temperature about$ 180^{\circ}C$ by using of oxygen containing ozone instead of pure oxygen and resistivity of thin films was decreased from ~ ${\times}10^{-2}{\Omega}cm$ to ~${\times}10^{-3}{\Omega}cm$.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.26-30
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• 2013

For the realization of high-k insulator, aluminum oxide ($Al_2O_3$) was deposited by using an oxygen ion beam assisted deposition (IBAD) during e-beam evaporation. From the thickness of the $Al_2O_3$ layer evaporated with IBAD process, it was possible to investigate the etching effect of ion beam at higher energies during e-beam evaporation. It was also possible to obtain a higher capacitance as a result of IBAD in spite of the reduced thickness of $Al_2O_3$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.926-929
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• 2007

A significant progress has been made in the characterization of zinc oxide (ZnO) semiconductor as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor due to its high electron mobility at low deposition temperature which is quite suitable for flexible display and OLED devices. The wet pattering of ZnO is another important issue with regard to mass production of ZnO thin film transistor device. However, the wet behavior of ZnO thin film in aqueous wet etching solutions conventionally used un TFT industry has not been reported yet, in this work, wet corrosion behavior of RF magnetron sputtered ZnO thin film in various wet solutions such as phosphoric and nitric acid solutions was studied using by electrochemical analysis. The effects of deposition parameters such as RF power and oxygen partial pressure on corrosion rate are also examined.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.54-61
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• 1996

Indium-tin oxide (ITO) films were deposited on the glass substrate by the reactive -ionized cluster beam deposition(ICBD) method. In the oxygen atmosphere, indium cluster formed through the nozzle is ionized by the electron bombardment and is accelerated to be deposited on the substrate. And tin is simultaneoulsy evaporated from the boron-nitride crucible. The chracteristics of films were examined by the X-ray photoelectron spectroscopy(XPS), glancing angle X-ray diffractrion(GXRD) and the electrical properties. were measured by 4-point-probe and Hall effect measurement system . From the XPS spectrum , it was found that indium and tin atoms combined with the oxygen to form oxide$(In_2O_3, SnO_2)$. In the case of films with high tin-concentration, the GXRD spectra show that the main $In_2O_3$ peak of (222) plane, but also sub peaks((440) peak etc.) and $SnO_2$ peaks were detected. From that results, itis concluded that the heavily dopped tin component (more than 14 at. %) disturbs to form $In_2O_3$(222) phase. Four-point-probe and Hall effect measurement show that, in the most desirable case, the transmittance of the films is more then 90% in visible range and its resistivity is $$\rho$=3.55 \times10^{-4}\Omega$cm and its mobility is $\mu$=42.8 $\textrm{cm}^2$/Vsec.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.56-61
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• 1999

Highly conductive oxide films of BaRuO$_3$ have been grown heteroepitaxially on (100) LaAlO$_3$ single crystalline substrates by using pulsed laser deposition. The films are c-axis oriented with an in-plane epitaxial relationship of <010><100>BaRuO$_3$ // <110>LaAlO$_3$. Atomic force microscopy (AFM) observation shows that they consist of a fine-arranged network of grains and have a mosaic microstructure. Generally temperature-dependent resistivity shows the transition from metallic curve to semiconductor-metallic twofold curve by the deposition conditions for Ru oxide based materials like SrRuO$_3$, CaRuO$_3$, BaRuO$_3$, etc.. This twofold curve comes from the structural similarity of Ru oxide based materials including BaRuO$_3$. We find that the distance of Ru-Ru bonding in the unit cell of BaRuO$_3$ as well as the grain boundary scattering could be the two important causes of these interesting conductive properties.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.30-35
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• 2000

Indium-Tin Oxide (ITO) thin films were deposited on the commercial glass substrate by rf-magnetron sputtering. The ITO films with the thickness of 2,000~2,400 $\AA$ were prepared by changing the oxygen partial pressures of 2, 3, and 5%, as well as by changing the substrate temperature of $300^{\circ}C$ and $500^{\circ}C$. spectrophotometer, XRD, SEM, AFM, 4-point probe and Hall effect system were employed to characterize the ITO films. The optimum deposition conditions were the substrate temperature of $500^{\circ}C$ and oxygen partial pressure of 2-3%. At theses conditions, the ITO film showed the transmittance of 91%, the resistivity of $5.4\times10^{-3}\Omega$cm, the carrier concentration of $1.0\times10^{19}\textrm{cm}^{-3}$, and the carrier mobility of 150$\textrm{cm}^2$/Vsec. In XRD spectra, the (222) and (400) $In_2O_3$ planes were dominant under the optimum deposition conditions When the substrate was cleaned only by the method of ultrasonic cleaning without both pre-annealing and chemical treatment of the substrate, the ITO film exhibited the transmittance of 86%, the carrier concentration of $5.4\times10^{19}\textrm{cm}^{-3}$ and the mobility of 24$\textrm{cm}^2$/Vsec.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.11a
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• pp.23.1-23.1
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• 2008

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.85-85
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• 2001