• Korean Chemical Engineering Research
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• v.53 no.2
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• pp.131-136
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• 2015

The nanostructural graphene/vanadium oxide (graphene/$V_2O_5$) composite with enhanced capacitance was synthesized by the electro-deposition in 0.5 M $VOSO_4$ solution. The morphology of composites was characterized using scanning electron microscopy (SEM), x-ray diffraction pattern (XRD), and x-ray photoelectron spectroscopy (XPS). The oxidation states of the electro-deposited vanadium oxide was found to be $V^{5+}$ and $V^{4+}$. The morphology of the prepared graphene/$V_2O_5$ composite exhibits a netlike nano-structure with $V_2O_5$ nanorods in about 100 nm diameter, which could lead a better contact between electrolyte an electrode. The composite with a deposition time of 4,000 s exhibits the specific capacitance of $854mF/cm^2$ at a scan rate of 20 mV/s and the capacitance retention of 53% after 1000 CV cycles.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.77-81
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• 2020

Resistive RAM (ReRAM) is a strong candidate for the next-generation nonvolatile memories which use the resistive switching characteristic of transition metal oxides. The resistive switching behaviors originate from the redistribution of oxygen vacancies inside of the oxide film by applied programming voltage. Therefore, controlling the oxygen vacancy inside transition metal oxide film is most important to obtain and control the resistive switching characteristic. In this study, we introduced an applying electric field into photochemical metal-organic deposition (PMOD) process to control the oxidation state of metal oxide thin film during the photochemical reaction by UV exposure. As a result, the surface oxidation state of FeOx film could be successfully controlled by the electric field-assisted PMOD (EFAPMOD), and the controlled oxidation states were confirmed by x-ray photoelectron spectroscopy (XPS) I-V characteristic. And the resistive switching characteristics with the oxidation-state of the surface region could be controlled effectively by adjusting an electric field during EFAPMOD process.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.211-213
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• 2008

The TFTs from ZnO semiconductor with hafnium oxide dielectrics were prepared by atomic layer deposition to characterize the electrical properties. Good electrical properties of oxide TFT was obtained with channel mobility of $2.1\;cm^2/Vs$, threshold voltage of 0 V, the subthreshold slope of 0.9 V/dec, and on to off current ratio of $10^6$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.27-32
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• 2006

The present status and prospects for further development of thin-film electroluminescent (TFEL) devices using oxide phosphors are described. High-luminance oxide TFEL devices have been recently developed using a new combinatorial deposition technique featuring rf magnetron sputtering with a subdivided powder target. In addition, new flexible oxide TFEL devices have been fabricated on an oxide ceramic sheet and operated stably in air above $200^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2028-2030
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• 2005

The electrical conductivity of manganese oxide and complex manganese oxide produced by anodic deposition method was measured. The additive transition metal is Cu, Co and Fe. The transition metals like as Cu, Co and Fe improved electrical conductivity of complex manganese oxide compared with manganese oxide. This is coincide with the results of molecular orbital calculation by DV-Xa.

• Journal of Korean Society for Atmospheric Environment
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• v.22 no.3
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• pp.373-381
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• 2006

The catalytic combustion of toluene was investigated on the Cu-Mn oxide catalysts prepared by the deposition-precipitation method. Experiment of toluene combustion was performed with a fixed bed flow reactor in the temperature range of $100{\sim}280^{\circ}C$. Among the catalysts, 1.29Cu/Mn showed the most activity at $260^{\circ}C$. The deposition-precipitation method may be showed the potential to enhance the activity of catalysts. The catalysts were characterized by BET, scanning electron microscopy (SEM), temperature-programmed reduction (TPR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) techniques. On the basis of catalyst characterization data, the results showed that the surface of catalysts by deposition-precipitation method had uniform distribution and smaller particle size, which enhanced the reduction capability of catalysts. The XRD results showed that $Cu_{1.5}Mn_{1.5}O_{4}$ spinel phase was made by deposition-precipitation method, and increased catalyst activity and redox characteristic. It was assumed that the reduction step of $Cu_{1.5}Mn_{1.5}O_{4}$ spinel phase progressed $Cu_{1.5}Mn_{1.5}O_{4}\;to\;CuMnO_{2},\;and\;Cu_{2}O\;to\;CuMn_{2}O_{4}\;and\;Cu$.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.82-85
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• 2010

Recently, thin film processes for oxides and metal deposition, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), have been widely adapted to fabricate solid oxide fuel cells (SOFCs). In this paper, we presented two research area of the use of such techniques. Gadolinium doped ceria (GDC) showed high ionic conductivity and could guarantee operation at low temperature. But the electron conductivity at low oxygen partial pressure and the weak mechanical property have been significant problems. To solve these issues, we coated GDC electrolyte with a nano scale yittria-doped stabilized zirconium (YSZ) layer via atomic layer deposition (ALD). We expected that the thin YSZ layer could have functions of electron blocking and preventing ceria from the reduction atmosphere. Yittria-doped barium zirconium (BYZ) has several orders higher proton conductivity than oxide ion conductor as YSZ and also has relatively high chemical stability. The fabrication processes of BYZ is very sophisticated, especially the synthesis of thin-film BYZ. We discussed the detailed fabrication processes of BYZ as well as the deposition of electrode. This paper discusses possible cell structure and process flow to accommodate such films.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.245-245
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• 2012

Syntheses of oxide supported metal catalysts by wet-chemical routes have been well known for their use in heterogeneous catalysis. However, uniform deposition of metal nanoparticles with controlled size and shape on the support with high reproducibility is still a challenge for catalyst preparation. Among various synthesis methods, arc plasma deposition (APD) of metal nanoparticles or thin films on oxide supports has received great interest recently, due to its high reproducibility and large-scale production, and used for their application in catalysis. In this work, Au and Pt nanoparticles with size of 1-2 nm have been deposited on titania powder by APD. The size of metal nanoparticles was controlled by number of shots of metal deposition and APD conditions. These catalytic materials were characterized by x-ray diffraction (XRD), inductively coupled plasma (ICP-AES), CO-chemisorption and transmission electron microscopy (TEM). Catalytic activity of the materials was measured by CO oxidation using oxygen, as a model reaction, in a micro-flow reactor at atmospheric pressure. We found that Au/$TiO_2$ is reactive, showing 100% conversion at $110^{\circ}C$, while Pt/$TiO_2$ shows 100% conversion at $200^{\circ}C$. High activity of metal nanoparticles suggests that APD can be used for large scale synthesis of active nanocatalysts. We will discuss the effect of the structure and metal-oxide interactions of the catalysts on catalytic activity.

• Journal of the Korean institute of surface engineering
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• v.47 no.3
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• pp.109-115
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• 2014

High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power, but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported. The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas, MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, $In_2O_3$ : $SnO_2$ composition ratio of 9 : 1 wt% target was used, Ar : $O_2$ flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of $O_2$ and then fixed 2 ~ 6 sccm was compared against that. The thickness of the thin film deposition is fixed at 60 nm, when the partial pressure of oxygen at 9.1%, the specific resistance value of $4.565{\times}10^{-4}{\Omega}cm$, transmittance 86.6%, mobility $32.29cm^2/Vs$ to obtain the value.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.200-203
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• 2011

In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.