• Title/Summary/Keyword: Oxide CMP

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Studies on the AFM analysis of Cu CMP processes for pattern pitch size and density after global planarization (패턴 피치크기 및 밀도에 따른 Cu CMP 공정의 AFM 분석에 관한 연구)

  • 김동일;채연식;윤관기;이일형;조장연;이진구
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.9
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    • pp.20-25
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    • 1998
  • Cu removal rates for various SiO$_2$ trench pitch sizes and densities and AFM images of surface profiles after global planarization using Cu CMP technology are investigated. In the experimental results, Cu removal rates are increasing as the pattern densities and pattern pitches are getting high and low, respectively, and then decreasing after local planarization. The rms roughness after global planarization are about 120$\AA$. AFM images with a 50% pattern density for 1${\mu}{\textrm}{m}$ and 2${\mu}{\textrm}{m}$ pitches show that thicknesses of 120~330$\AA$ Cu interconnects have been peeled off and oxide erosion of Cu/Sio$_2$ sidewall is observed. However, AFM images with a 50% pattern density for 10${\mu}{\textrm}{m}$ and 15${\mu}{\textrm}{m}$ pitches show that 260~340$\AA$ thick Cu interconnects have been trenched at the boundaries of Cu/Sio$_2$ sidewall.

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Effect of Cerium Ammonium Nitrate and Alumina Abrasive Particles on Polishing Behavior in Ruthenium Chemical Mechanical Planarization (Ruthenium CMP에서 Cerium Ammonium Nitrate와 알루미나 연마 입자가 연마 거동에 미치는 영향)

  • Lee, Sang-Ho;Lee, Sung-Ho;Kang, Young-Jae;Kim, In-Kwon;Park, Jin-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.9
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    • pp.803-809
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    • 2005
  • Cerium ammonium nitrate (CAN) and nitric acid was used an etchant and an additive for Ru etching and polishing. pH and Eh values of the CAN and nitric acid added chemical solution satisfied the Ru etching condition. The etch rate increased linearly as the concentration of CAN increased. Nitric acid added solution had the high etch rate. But micro roughness of etched surfaces was not changed before and after etching, The removal rate of Ru film was the highest in $1wt\%$ abrasive added slurry, and not increased despite the concentration of alumina abrasive increased to $5wt\%$. Even Ru film was polished by only CAN solution due to the friction. The highest removal rate of 120nm/min was obtained in 1 M nitric acid and $1wt\%$ alumina abrasive particles added slurry. The lowest micro roughness value was observed in this slurry after polishing. From the XPS analysis of etched Ru surface, oxide layer was founded on the etched Ru surface. Therefore, Ru was polished by chemical etching of CAN solution and oxide layer abrasion by abrasive particles. From the result of removal rate without abrasive particle, the etching of CAN solution is more dominant to the Ru CMP.

The contamination prevention of diamond conditioner by anti-contamination film coating (오염방지막 코팅을 통한 Diamond Conditioner의 표면오염 방지)

  • Son, Il-Ryong;Kang, Young-Jae;Kim, In-Kwon;Kim, In-Gon;Jeon, Jeong-Bin;Kim, Tae-Jin;Park, Jin-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.114-114
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    • 2008
  • 반도체 device의 성능을 향상시키기 위하여 패턴은 더욱 더 고 집적화 되고 배선 또한 다층배선 구조를 가지게 되었으며 요구되는 선폭 또한 더욱 미세화 되어 CMP 공정이 도입되게 되었다. 이러한 CMP 공정에 사용되는 소모품으로는 크게 세 가지의 중요한 부분으로 나눌 수 있다. 그것은 slurry와 pad, conditioner이다. 그중에 pad conditioning 공정은 CMP 공정시 pad의 마모에 따라 감소하는 removal rate(RR)값을 회복시키기 위한 공정으로 마모된 pad의 표면을 활성화 시켜주는 중요한 공정이다. 하지만 pad conditioning 공정을 장시간 진행하게 되면 conditioner 표면에 오염물이 발생하게 되며, 오염물로 인하여 wafer표면에 scratch 및 defect을 발생시키는 원인이 될 수 있다. 이러한 문제점을 보완하기 위하여 conditioner의 표면을 변화시켜 공정중의 오염이 발생하지 않도록 하는 것이 중요하다. 본 논문에서는 oxide CMP 실험을 통하여 conditioner표면에 오염물이 발생함을 확인하였으며 energy dispersive spectroscopy(EDS) 분석을 통하여 주오염물의 성분이 oxide slurry중 silica임을 확인하였다. Conditioner의 표면을 소수성으로 만들기 위하여 self assembled monolayer(SAM) 방법을 이용하여 표면에 코팅을 하였으며, 소수성 박막이 코팅된 conditioner와 코팅되지 않은 conditioner의 비교 실험을 통하여 오염 정도를 비교하였다.

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Analysis of Material Removal Rate Profile and Stress Distribution According to Retainer Pressure (CMP에서 리테이너링의 압력에 따른 연마율 프로파일과 응력 분포 해석)

  • Lee, Hyun-Seop;Lee, Sang-Jik;Jeong, Suk-Hoon;An, Joon-Ho;Jeong, Hea-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.482-483
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    • 2009
  • In chemical mechanical planarization (CMP) process, the uniformity of stress acting on wafer surface is a key factor for uniform material removal of thin film especially in the oxide CMP. In this paper, we analyze the stress on the contact region between wafer and pad with finite-element analysis (FEA). The setting pressure acting on wafer back side was $500g/cm^2$ and the retainer pressure was changed from 300 to $700g/cm^2$. The polishing test is also done with the same conditions. The material removal rate profiles well-matched with stress distribution.

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Dependency of Planarization Efficiency on Crystal Characteristic of Abrasives in Nano Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing (STI CMP용 나노 세리아 슬러리에서 연마입자의 결정특성에 따른 평탄화 효율의 의존성)

  • Kang, Hyun-Goo;Takeo Katoh;Kim, Sung-Jun;Ungyu Paik;Park, Jea-Gun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.65-65
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    • 2003
  • Chemical mechanical polishing (CMP) is one of the most important processes in recent ULSI (Ultra Large Scale Integrated Circuit) manufacturing technology. Recently, ceria slurries with surfactant have recently been used in STI-CMP,[1] became they have high oxide-to-nitride removal selectivity and widen the processing margin The role of the abrasives, however, on the effect of planarization on STI-CMP is not yet clear. In this study, we investigated how the crystal characteristic affects the planarization efficiency of wafer surface with controlling crystallite size and poly crystalline abrasive size independently.

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A study on the global planarization characteristics in end point stage for device wafers (다바이스 웨이퍼의 평탄화와 종점 전후의 평탄화 특성에 관한 연구)

  • 정해도;김호윤
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.12
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    • pp.76-82
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    • 1997
  • Chemical mechanical polishing (CMP) has become widely accepted for the planarization of multi-interconnect structures in semiconductor manufacturing. However, perfect planarization is not so easily ahieved because it depends on the pattern sensitivity, the large number of controllable process parameters, and the absence of a reliable process model, etc. In this paper, we realized the planarization of deposited oxide layers followed by metal (W) polishing as a replacement for tungsten etch-back process for via formation. Atomic force microscope (AFM) is used for the evaluation of pattern topography during CMP. As a result, AFM evaluation is very attractive compared to conventional methods for the measurment of planarity. mOreover, it will contribute to analyze planarization characteristics and establish CMP model.

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