• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.125-129
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• 2005

Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

• 한국수산과학회지
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• 제39권2호
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• pp.85-93
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• 2006

This study was conducted to evaluate the optimal processing conditions of smoke-dried powdered oysters and to determine their shelf-life during storage for development of a natural oyster flavoring substance. The optimal conditions for processing of smoke-dried oyster powder with freshy oyster were as follows. Raw shelled oysters were rinsed with 3% saline solution, drained, boiled for 10 minutes at $98^{\circ}C$, and then smoked for 1 hour at $50^{\circ}C$, followed by drying for 4 hours at $80^{\circ}C$ Smoke-dried oyster powder with oyster scraps were prepared as flavoring material. The smoked oyster scraps were submerged in oyster sauce far 10 minutes at room temperature and then dried with hot air for 5 hours at $50^{\circ}C$. The smoke-dried oysters and smoke-dried oyster scraps were then pulverized to 50 mesh and packed in tea bags or vacuum-packed in laminated plastic film bags (PE/PVDC/CPP, $12{\mu}m/15{\mu}m/50{\mu}m$). Compared to non smoke-dried powdered oysters, the smoking and dipping in oyster sauce enhanced the flavor and prevented lipid oxidation of the smoke-dried powdered oyster product. Shelf-life tests indicated that the vacuum-packaging method preserved the quality of smoke-dried powdered oysters stored for 150 days at room temperature.

• Journal of Korean Society for Atmospheric Environment
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• 제19권E3호
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• pp.121-127
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• 2003

The characteristics of heterogeneous photocatalytic decomposition were investigated at low concentration level of $O_3$on TiO$_2$for various operating parameters such as: loaded catalyst weight (0∼4 mg/$\textrm{cm}^2$), initial concentration of $O_3$(0.06∼10.0 ppm), gas flow rate (1.0 ∼ 2.5ι/min), and relative humidity (0∼80%). This study was conducted using a flow-type reactor at room temperature. Three kinds of pure TiO$_2$(P25, ST -01, and E- 23) were employed as photocatalyts. It was found that $O_3$removal ratio was identical, regardless of the loaded TiO$_2$weight in the range from 0.5 to 4.0 mg/$\textrm{cm}^2$. It was also found that higher initial ozone concentration results in greater oxidation rate of ozone and experimental data show kinetically a good agreement with Langmur-Hinshelwood kinetic model. We also observed that the removal ratio of $O_3$increases linearly with the increasing flow rate and also with the increasing relative humidity for each catalyst.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.562-562
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• 2012

Recently, graphene and graphene-based materials such as graphene oxide (GO) or reduced graphene oxide (R-GO) draws a great attention for electronic devices due to their structures of one atomic layer of carbon hexagon that have excellent mechanical, electrical, thermal, optical properties and very high specific surface area that can be high potential for chemical functionalization. R-GO is a promising candidate because it can be prepared with low-cost from solution process by chemical oxidation and exfoliation using strong acids and oxidants to produce graphene oxide (GO) and its subsequent reduction. R-GO has been used as semiconductor or conductor materials as well as sensing layer for bio-molecules or ions. In this work, reduced graphene oxide field-effect transistor (R-GO FET) has been fabricated with ITO extended gate structure that has sensing area on ITO extended gate part. R-GO FET device was encapsulated by tetratetracontane (TTC) layer using thermal evaporation. A thermal annealing process was carried out at $140^{\circ}C$ for 4 hours in the same thermal vacuum chamber to remove defects in R-GO film before deposition of TTC at $50^{\circ}C$ with thickness of 200 nm. As a result of this process, R-GO FET device has a very high stability and durability for months to serve as a transducer for sensing applications.

• 분석과학
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• 제8권4호
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• pp.611-615
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• 1995

The design of appropriate chemically modified electrodes should allow development of new voltammetric measurement schemes with enhanced selectivity and sensitivity. Microorganism like algae has high ability to trap toxic and heavy metal ions and different affinities for metal ions. A copper(II) ion-selective carbon paste electrode was constructed by incorporating alga Anabaena into a conventional carbon paste mixture, and then the film of 10% Nafion was coated to avoid the swelling of the electrode surface. Copper ion could be deposited at the 25% algamodified electrode for 15 min without the applied potential while stirring the solution by only immersing the electrode in a buffer (pH 4.0) cot1taining copper(II). Temperature was controlled at $35^{\circ}C$. After preconcentration was carried out the electrode was transferred to a 0.1 M potassium chloride solution and was reduced at -0.6 volt at $25^{\circ}C$. The differential pulse anodic stripping voltammetry was employed. A well-defined oxidation peak could be obtained at -0.1 volt (vs SCE). In five deposition / measurement / regeneration cycles, the responses were reproducible and relative standard deviations were 3.3% for $8.0{\times}10^{-4}M$ copper(II). Calibration curve for copper was linear over the range from $2.0{\times}10^{-4}M$ to $1.0{\times}10^{-3}M$. The detection limit was $7.5{\times}10^{-5}M$. Studies of the effect of diverse ions showed that the coexisting metal ions had little or no effect for the determination of copper. But anions such as cyanide. oxalate and EDTA seriously interfered.

• Transactions on Electrical and Electronic Materials
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• 제5권5호
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• pp.169-172
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• 2004

Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a $N_2$O gate oxide 30 $\AA$ by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for $N_2$O gate oxide 30 $\AA$, ultra thin gate oxide 30 $\AA$ was formed by using the $N_2$O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi$_2$ process was performed by RTP annealing at 850 $^{\circ}C$ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance( Ω /cont.) and higher capacitance-gate voltage(C- V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ～ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 $\AA$ proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 $\AA$ $N_2$O gate oxide.

• 한국태양에너지학회 논문집
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• 제32권4호
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• pp.43-50
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• 2012

Metal-metal oxide (M-M oxide) cermet solar selective coatings with a double cermet layer film structure were deposited on the Al-deposited glass substrate by using a directed current (DC) magnetron sputtering technology. M oxide (CrO and ZrO) was used as the ceramic component in the cermets, and Cr and Zr used as the metallic components. In addition, black Cr (Cr-$Cr_2O_3$ cermet) solar selective coatings were deposited on the Ni-plated Cu substrate by using a electroplating method for comparison. The thermal stability tests were carried out for performance evaluation of solar coatings. Reflectance measurements were used to evaluate both solar absorptance(${\alpha}$) and thermal emittance (${\epsilon}$) of the solar coatings before and after thermal testing by using a spectrometer. Optical properties of optimized cermet solar coatings were ${\alpha}{\simeq}0.94-0.96$ and ${\epsilon}{\simeq}0.1$ ($100^{\circ}C$). The results of thermal stability test of M-M oxide solar coatings showed that the Cr-CrO cermet solar selective coatings were more stable than the Zr-ZrO cermet selective coatings at temperature of both $400^{\circ}C$ in air and $450^{\circ}C$ in vacuum. The black Cr solar selective coatings were degraded in air at temperature of $400^{\circ}C$. The main optical degradation modes of these coatings were diffusion of metal atoms, and oxidation.

• Bulletin of the Korean Chemical Society
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• 제35권10호
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• pp.3052-3058
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• 2014

In this article, we have designed and synthesized a novel donor-${\pi}$-acceptor (D-${\pi}$-A) type porphyrin-based sensitizer (denoted UI-5), in which a carboxyl anchoring group and a 9,9-dimethyl fluorene were introduced at the meso-positions of porphyrin ring via phenylethynyl and ethynyl bridging units, respectively. Long alkoxy chains in ortho-positions of the phenyls were supposed to reduce the degree of dye aggregation, which tends to affect electron injection yield in a photovoltaic cell. The cyclic voltammetry was employed to determine the band gap of UI-5 to be 1.41 eV based on the HOMO and LUMO energy levels, which were estimated by the onset oxidation and reduction potentials. The incident monochromatic photon-to-current conversion efficiency of the UI-5 DSSC assembled with double-layer (20 nm-sized $TiO_2$/400 nm-sized $TiO_2$) film electrodes appeared lower upon overall ranges of the excitation wavelengths, but exhibited a higher value over the NIR ranges (${\lambda}$ = 650-700 nm) compared to the common reference sensitizer N719. The UI-5-sensitized cell yielded a relatively poor device performance with an overall conversion efficiency of 0.74% with a short circuit photocurrent density of $3.05mA/cm^2$, an open circuit voltage of 0.54 mV and a fill factor of 0.44 under the standard global air mass (AM 1.5) solar conditions. However, our report about the synthesis and the photovoltaic characteristics of a porphyrin-based sensitizer in a D-${\pi}$-A structure demonstrated a significant complex relationship between the sensitizer structure and the cell performance.

• 청정기술
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• 제4권1호
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• pp.6-23
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• 1998

반도체 산업은 각종 전자지기의 발달로 급격히 성장하였으며 현재는 우리 나라에서도 반도체 산업이 경제에서 큰 비중을 차지하고 있다. 국내외의 환경규제와 환경에 대한 대중의 관심이 높아지면서, 반도체 공정의 안전한 관리와 환경유해성 물질의 배출억제를 위하여 반도체 산업에서의 청정기술의 개발이 시급한 과제가 되고 있다. 청정기술이란 근본적으로 환경유해성 오염물질을 배출하지 않는 기술을 의미하나 이는 지금까지 개발된 기술로는 거의 불가능하다. 따라서 공정 내에서부터 환경유해물질의 배출을 최소화하는 기술도 청정기술의 범위에 포함시킨다. 반도체 공정은 연속적인 화학공정들로 구성되어 있으며 그 과정에서 많은 종류의 환경유해성 오염물질이 배출될 수 있다. 반도체 공정에서 발생하는 오염물질들은 기상 형태의 배가스, 액상 형태의 폐수, 폐기물의 세 가지 형태로 나누어 볼 수 있다. 기상의 오염물질을 억제하기 위한 기술로는 오염물질만을 선택적으로 파괴하거나 오염물질만을 농축하여 공정 내에서 재활용하는 방법, 또는 오염을 유발하는 물질 대신 이를 대체할 수 있는 환경에 안전한 물질을 개발하는 방법 등이 있다. 액상의 오염물질을 저감시키는 기술로는 공정의 최적화를 통하여 오염물질의 양을 최소화하는 방법과 유독한 물질로 구성된 원료를 대체하는 방법 등이 있다. 또한 근본적인 오염원을 제거하기 위하여 화학물질의 사용량 자체를 줄이거나 기상을 이용한 세정 시스템 등의 방법을 사용하는 것도 연구중이다.

• 한국재료학회지
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• 제19권8호
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• pp.427-431
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• 2009

ZnO wire-like thin films were synthesized through thermal oxidation of sputtered Zn metal films in dry air. Their nanostructure was confirmed by SEM, revealing a wire-like structure with a width of less than 100 nm and a length of several microns. The gas sensors using ZnO wire-like films were found to exhibit excellent $H_2$ gas sensing properties. In particular, the observed high sensitivity and fast response to $H_2$ gas at a comparatively low temperature of $200^{\circ}C$ would lead to a reduction in the optimal operating temperature of ZnO-based $H_2$ gas sensors. These features, together with the simple synthesis process, demonstrate that ZnO wire-like films are promising for fabrication of low-cost and high-performance $H_2$ gas sensors operable at low temperatures. The relationship between the sensor sensitivity and $H_2$ gas concentration suggests that the adsorbed oxygen species at the surface is $O^-$.