• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2001.10a
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• pp.349-354
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• 2001

In this study, we investigated the effect of the impacting ang1e of particles, the scanning times and the stand-off distance on the surface roughness and the weight-loss rate of samples with no mask, and the wall profile and overetching of samples with different mask pattern in powder blasting of soda-lime glass. The varying parameters were the different impact angles between 50$^{\circ}$ and 90$^{\circ}$, scanning times of nozz1e up to 40 and the stand-off distances 70mm and 100mm. The widths of mask pattern were 0.2mm, 0.5mm and 1mm. The powder was alumina sharp particles, WA#600. The mass flow rate of powder during the erosion test was fixed constant at 175g/min and the blasting pressure of powder at 0.2MPa

• Journal of the Korean Society for Precision Engineering
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• v.21 no.6
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• pp.28-34
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• 2004

The old technique of sandblasting which has been used for decoration of glass surface has recently been developed into a powder blasting technique for brittle materials such as glass, silicon and ceramics, capable of producing micro structures larger than 100${\mu}{\textrm}{m}$. In this study, we introduced oblique powder blasting, and investigated the effect of the impacting angle of particles, the scanning times and the stand-off distance on the surface roughness and the weight-loss rate of samples with no mask, and the wall profile and overetching of samples with different mask pattern in powder blasting of soda-lime glass. The varying parameters were the different impact angles between 50$^{\circ}$ and 90$^{\circ}$, scanning times of nozzle up to 40 and the stand-off distances 70mm and 100mm. The widths of mask pattern were 0.2mm, 0.5mm and 1mm. The powder was alumina sharp particles, WA #600. The mass flow rate of powder during the erosion test was fixed constant at 175g/min and the blasting pressure of powder at 0.2Mpa.

• Journal of the Korean institute of surface engineering
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• v.32 no.2
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• pp.93-99
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• 1999

Surface polymer layer formed on the silicon wafer during the oxide overetching using $C_4F_8$/ helicon wave plasmas and their characteristics were investigated using spectroscopic elipsometry, X-ray photoelectron spectroscopy, and secondary ion mass spectrometry. Overetch percentage and dc-self bias voltage were varied to investigate the effects on the characteristics of the polymers remaining on the overetched silicon surface. The increase of bias voltage from -80 volts to -120 volts increased the C/F ratio and carbon bondings such as C-C, $C-CF_x$/, and C-Si in the polymer while reducing the thickness of the polymer layer. However, the increase of the overetch percentage from 50% to 100% did not change the composition of the polymer layer and the carbon bondings in the polymer layer remained same even though it increased the polymer thickness. The polymer layer formed at the higher dc-self bias voltage was more difficult to be removed by the following various post-etch treatments compared to that formed at the longer overetch percentage.

• Journal of the Korean institute of surface engineering
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• v.31 no.2
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• pp.117-126
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• 1998

In this study, the residue remaining on the silicon wafer during the oxide overetching using $C_4F_8/H_2$ helicon were plasmas and effects of various cleaning and annealing methods on the removal of the remaining residue were investigated. The addition of 30%$H_2$ to the C4F8 plasma increased the C/F ratio and the thickness of the residue on the etched silicon surface. Most of the residuse on the etched surfaces colud be removed by the oxygen plasmsa cleaning followed by thermal annealing over $450^{\circ}C$. Hydrogen-coataining residue formed on the silicon by 70%$C_4F_8/30%H_2$ helicon plasmas was more easily removed than hydrogen-free residue formed residue formed by $C_4F_8$ helicon wear plasmas. However, damage remaining on the silicon surface overetched using 70%$C_4F_8/30%H_2$ helicon plasmas was intensive and the degree of reocvery duing the post-annealing was lower.

• ETRI Journal
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• v.11 no.1
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• pp.89-96
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• 1989

$C_2F_6$/$CHF_6$ 플라즈마를 이용한 실리콘 산화막의 반응성이온 식각공정시 실리콘 표면에 형성되는 고분자 잔류막과 근표면 손상영역을 X-선 광전자분광법(x-ray photoelectron spectroscopy)과 러더포드 후방산란법(Rutherford backscattering)을 이용하여 연구하였다. 표면 잔류막은 CF, $CF_2$, $CF_3$, $C-CF_x$, 그리고 C-C/C-H 등의 결합을 가진 불화탄소 고분자로 구성되어 있으며, 또한 C 1s와 Si 2p X-선 광선자 스펙트럼으로부터 C-Si 결합이 존재함을 확인하였다. 반응성이온 식각을 거친 실리콘 표면 구조의 연구결과, 불소와 탄소로 구성된 고분자막($<20 \AA$)이 극표면에 존재하며, 식각 후 공기중에 노출됨에 따라 고분자 잔류층으로 산소가 통과하여 기판을 산화시킴으로써 실리콘 산화막( $~10\AA$)이 그 아래에 형성되었음을 알았다. 그리고 실리콘산화막 아래에 탄소-산소 결합영역이 관찰되었다. 플라즈마 가스의 조성에서 $CHF_3$의 량이 증가함에 따라 고분자 잔류막의 두께가 증가하였으며, 본 연구의 실험조건에서 2분간 overetching한 시편의 경우에도 실리콘 표면 영역의 손상정도가 매우 적음을 발견하였다.